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Author Bandurin, D. A.; Gayduchenko, I.; Cao, Y.; Moskotin, M.; Principi, A.; Grigorieva, I. V.; Goltsman, G.; Fedorov, G.; Svintsov, D.
Title Dual origin of room temperature sub-terahertz photoresponse in graphene field effect transistors Type Journal Article
Year 2018 Publication Appl. Phys. Lett. Abbreviated Journal Appl. Phys. Lett.
Volume 112 Issue 14 Pages 141101 (1 to 5)
Keywords (up) graphene field effect transistors, FET
Abstract Graphene is considered as a promising platform for detectors of high-frequency radiation up to the terahertz (THz) range due to its superior electron mobility. Previously, it has been shown that graphene field effect transistors (FETs) exhibit room temperature broadband photoresponse to incoming THz radiation, thanks to the thermoelectric and/or plasma wave rectification. Both effects exhibit similar functional dependences on the gate voltage, and therefore, it was difficult to disentangle these contributions in previous studies. In this letter, we report on combined experimental and theoretical studies of sub-THz response in graphene field-effect transistors analyzed at different temperatures. This temperature-dependent study allowed us to reveal the role of the photo-thermoelectric effect, p-n junction rectification, and plasmonic rectification in the sub-THz photoresponse of graphene FETs.

D.A.B. acknowledges the Leverhulme Trust for financial support. The work of D.S. was supported by Grant No. 16-19-10557 of the Russian Scientific Foundation (theoretical model). G.F., I.G., M.M., and G.G. acknowledge the Russian Science Foundation [Grant No. 14-19-01308 (MIET, cryostat upgrade) and Grant No. 17-72-30036, (MSPU, photoresponse measurements), the Ministry of Education and Science of the Russian Federation (Contract No. 14.B25.31.0007 (device fabrication) and Task No. 3.7328.2017/LS (NEP analyses)] and the Russian Foundation for Basic Research [Grant No. 15-02-07841 (device design)]. The authors are grateful to Professor M. S. Shur for helpful discussions.
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Call Number Serial 1309
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Author Floet, D. Wilms; Baselmans, J. J. A.; Klapwijk, T. M.; Gao, J. R.
Title Resistive transition of niobium superconducting hot-electron bolometer mixers Type Journal Article
Year 1998 Publication Applied Physics Letters Abbreviated Journal Appl. Phys. Lett.
Volume 73 Issue 19 Pages 2826
Keywords (up) HEB
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Call Number Serial 543
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Author Karasik, B. S.; Elantiev, A. I.
Title Noise temperature limit of a superconducting hot-electron bolometer mixer Type Journal Article
Year 1996 Publication Applied Physics Letters Abbreviated Journal Appl. Phys. Lett.
Volume 68 Issue 6 Pages 853-855
Keywords (up) HEB mixer noise temperature, Johnson noise, thermal fluctuation noise, noise bandwidth
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Call Number Serial 260
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Author Barends, R.; Hajenius, M.; Gao, J. R.; Klapwijk, T. M.
Title Current-induced vortex unbinding in bolometer mixers Type Journal Article
Year 2005 Publication Applied Physics Letters Abbreviated Journal Appl. Phys. Lett.
Volume 87 Issue Pages 263506 (1 to 3)
Keywords (up) HEB mixer numerical model, HEB model, IV-curves, vortex-antivortex, Berezinskii–Kosterlitz–Thouless theory, diffusion cooling channel, diffusion channel, distributed HEB model, distributed model, self-heating effect, temperature profile
Abstract We present a description of the current-voltage characteristics of hot electron bolometers in terms of the current-dependent intrinsic resistive transition of NbN films. We find that, by including this current dependence, we can correctly predict the complete current-voltage characteristics, showing excellent agreement with measurements for both low and high bias and for small as well as large devices. It is assumed that the current dependence is due to vortex-antivortex unbinding as described in the Berezinskii–Kosterlitz–Thouless theory. The presented approach will be useful in guiding device optimization for noise and bandwidth.
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Call Number Serial 604
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Author Karasik, B. S.; Il'in, K. S.; Pechen, E. V.; Krasnosvobodtsev, S. I.
Title Diffusion cooling mechanism in a hot-electron NbC microbolometer mixer Type Journal Article
Year 1996 Publication Applied Physics Letters Abbreviated Journal Appl. Phys. Lett.
Volume 68 Issue 16 Pages 2285-2287
Keywords (up) HEB mixer, diffusion cooling channel, diffusion channel
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Call Number Serial 262
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Author Prober, D. E.
Title Superconducting terahertz mixer using a transition-edge microbolometer Type Journal Article
Year 1993 Publication Appl. Phys. Lett. Abbreviated Journal Appl. Phys. Lett.
Volume 62 Issue 17 Pages 2119-2121
Keywords (up) HEB mixer, NbN, TES
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Call Number Serial 244
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Author Zhang, W.; Khosropanah, P.; Gao, J. R.; Kollberg, E. L.; Yngvesson, K. S.; Bansal, T.; Barends, R.; Klapwijk, T. M.
Title Quantum noise in a terahertz hot electron bolometer mixer Type Journal Article
Year 2010 Publication Applied Physics Letters Abbreviated Journal Appl. Phys. Lett.
Volume 96 Issue 11 Pages 111113-(1-3)
Keywords (up) HEB mixer, quantum limit, quantum noise, vacuum box, THz, Terahertz
Abstract We have measured the noise temperature of a single, sensitive superconducting NbN hot electron bolometer (HEB) mixer in a frequency range from 1.6 to 5.3 THz, using a setup with all the key components in vacuum. By analyzing the measured receiver noise temperature using a quantum noise (QN) model for HEB mixers, we confirm the effect of QN. The QN is found to be responsible for about half of the receiver noise at the highest frequency in our measurements. The beta-factor (the quantum efficiency of the HEB) obtained experimentally agrees reasonably well with the calculated value.
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Call Number Serial 624
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Author Burke, P. J.; Schoelkopf, R. J.; Prober, D. E.; Skalare, A.; Karasik, B. S.; Gaidis, M. C.; McGrath, W. R.; Bumble, B.; Leduc, H. G.
Title Spectrum of thermal fluctuation noise in diffusion and phonon cooled hot-electron mixers Type Journal Article
Year 1998 Publication Applied Physics Letters Abbreviated Journal Appl. Phys. Lett.
Volume 72 Issue 12 Pages 1516-1518
Keywords (up) HEB mixer; thermal fluctuation noise; TFN
Abstract A systematic study of the intermediate frequency noise bandwidth of Nb thin-film superconducting hot-electron bolometers is presented. We have measured the spectrum of the output noise as well as the conversion efficiency over a very broad intermediate frequency range (from 0.1 to 7.5 GHz) for devices varying in length from 0.08 μm to 3 μm. Local oscillator and rf signals from 8 to 40 GHz were used. For a device of a given length, the spectrum of the output noise and the conversion efficiency behave similarly for intermediate frequencies less than the gain bandwidth, in accordance with a simple thermal model for both the mixing and thermal fluctuation noise. For higher intermediate frequencies the conversion efficiency decreases; in contrast, the noise decreases but has a second contribution which dominates at higher frequency. The noise bandwidth is larger than the gain bandwidth, and the mixer noise is low, between 120 and 530 K (double side band).
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Call Number RPLAB @ gujma @ Serial 760
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Author Baselmans, J. J. A.; Baryshev, A.; Reker, S. F.; Hajenius, M.; Gao, J. R.; Klapwijk, T. M.; Vahtomin, Yu.; Maslennikov, S.; Antipov, S.; Voronov, B.; Gol'tsman, G.
Title Direct detection effect in small volume hot electron bolometer mixers Type Journal Article
Year 2005 Publication Appl. Phys. Lett. Abbreviated Journal Appl. Phys. Lett.
Volume 86 Issue 16 Pages 163503 (1 to 3)
Keywords (up) HEB, mixer, direct detection effect
Abstract We measure the direct detection effect in a small volume (0.15μm×1μm×3.5nm)(0.15μm×1μm×3.5nm) quasioptical NbN phonon cooled hot electronbolometermixer at 1.6THz1.6THz. We find that the small signal sensitivity of the receiver is underestimated by 35% due to the direct detection effect and that the optimal operating point is shifted to higher bias voltages when using calibration loads of 300K300K and 77K77K. Using a 200GHz200GHzbandpass filter at 4.2K4.2K the direct detection effect virtually disappears. This has important implications for the calibration procedure of these receivers in real telescope systems.
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Call Number Serial 377
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Author Siddiqi, I.; Prober, D. E.
Title Nb–Au bilayer hot-electron bolometers for low-noise THz heterodyne detection Type Journal Article
Year 2004 Publication Applied Physics Letters Abbreviated Journal Appl. Phys. Lett.
Volume 84 Issue 8 Pages 1404
Keywords (up) HEB, mixers, dynamic range, saturation, LO power, local oscillator power, Nb
Abstract The sensitivity of present Nb diffusion-cooled hot-electron bolometer (HEB) mixers is not quantum limited, and can be improved by reducing the superconducting transition temperature TC. Lowering TC reduces thermal fluctuations, resulting in a decrease of the mixer noise temperature TM. However, lower TC mixers have reduced dynamic range and saturate more easily due to background noise. We present 30 GHz microwave measurements on a bilayer HEB system, Nb–Au, in which TC can be tuned with Au layer thickness to obtain the maximum sensitivity for a given noise background. These measurements are intended as a guide for the optimization of THz mixers. Using a Nb–Au mixer with TC = 1.6 K, we obtain TM = 50 K with 2 nW of local oscillator (LO) power. Good mixer performance is observed over a wide range of LO power and bias voltage and such a device should not exhibit saturation in a THz receiver.
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Call Number Serial 571
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Author Gao, J. R.; Hovenier, J. N.; Yang, Z. Q.; Baselmans, J. J. A.; Baryshev, A.; Hajenius, M.; Klapwijk, T. M.; Adam, A. J. L.; Klaassen, T. O.; Williams, B. S.; Kumar, S.; Hu, Q.; Reno, J. L.
Title Terahertz heterodyne receiver based on a quantum cascade laser and a superconducting bolometer Type Journal Article
Year 2005 Publication Appl. Phys. Lett. Abbreviated Journal Appl. Phys. Lett.
Volume 86 Issue Pages 244104 (1 to 3)
Keywords (up) HEB, QCL
Abstract We report the first demonstration of an all solid-stateheterodyne receiver that can be used for high-resolution spectroscopy above 2THz suitable for space-based observatories. The receiver uses a NbN superconducting hot-electron bolometer as mixer and a quantum cascade laser operating at 2.8THz as local oscillator. We measure a double sideband receiver noise temperature of 1400K at 2.8THz and 4.2K, and find that the free-running QCL has sufficient power stability for a practical receiver, demonstrating an unprecedented combination of sensitivity and stability.
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Call Number Serial 905
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Author Fu, K.; Zannoni, R.; Chan, C.; Adams, S. H.; Nicholson, J.; Polizzi, E.; Yngvesson, K. S.
Title Terahertz detection in single wall carbon nanotubes Type Journal Article
Year 2008 Publication Applied Physics Letters Abbreviated Journal Appl. Phys. Lett.
Volume 92 Issue 3 Pages 033105
Keywords (up) HEB, single wall, carbon nanotube, CNT, SWNT, SWCNT, terahertz detection, THz
Abstract It is reported that terahertz radiation from 0.69 to 2.54 THz has been sensitively detected in a device consisting of bundles of carbon nanotubes containing single wall metallic carbon nanotubes, quasioptically coupled through a lithographically fabricated antenna, and a silicon lens. The measured data are consistent with a bolometric detection process in the metallic tubes and the devices show promise for operation well above 4.2 K.
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Notes NEP is not shown Approved no
Call Number Serial 566
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Author Bennett, Douglas A.; Schmidt, Daniel R.; Swetz, Daniel S.; Ullom, Joel N.
Title Phase-slip lines as a resistance mechanism in transition-edge sensors Type Journal Article
Year 2014 Publication Appl. Phys. Lett. Abbreviated Journal Appl. Phys. Lett.
Volume 104 Issue Pages 042602
Keywords (up) microbolometers, TES, phase-slip lines, PSL
Abstract The fundamental mechanism of resistance in voltage-biased superconducting films is poorly understood despite its importance as the basis of transition-edge sensors (TESs). TESs are utilized in state-of-the-art microbolometers and microcalorimeters covering a wide range of energies and applications. We present a model for the resistance of a TES based on phase-slip lines (PSLs) and compare the model to data. One of the model's predictions, discrete changes in the number of PSLs, is a possible explanation for the observed switching between discrete current states in localized regions of bias.
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Call Number Serial 929
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Author Li, T. F.; Pashkin, Yu. A.; Astafiev, O.; Nakamura, Y.; Tsai, J. S.; Im, H.
Title High-frequency metallic nanomechanical resonators Type Journal Article
Year 2008 Publication Appl. Phys. Lett. Abbreviated Journal Appl. Phys. Lett.
Volume 92 Issue Pages 043112(1)-043112(3)
Keywords (up) nanomechanical resonator, polycrystalline metal films
Abstract We developed a technology to fabricate fully metallic doubly clamped beams working as nanomechanical resonators. Measured with a magnetomotive detection scheme, the beams, made of polycrystalline metal films, show as good quality as previously reported ones made of single crystal materials, such as Si, GaAs, AlN, and SiC. Our method is compatible with the conventional fabrication process for nanoscale electronic circuits and thus offers a possibility of easily integrating the beams into superconducting charge and flux qubits and single-electron transistors as well as coupling them to coplanar waveguide resonators.
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Call Number Serial 621
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Author Gao, J. R.; Hajenius, M.; Tichelaar, F. D.; Klapwijk, T. M.; Voronov, B.; Grishin, E.; Gol’tsman, G.; Zorman, C. A.; Mehregany, M.
Title Monocrystalline NbN nanofilms on a 3C-SiC∕Si substrate Type Journal Article
Year 2007 Publication Appl. Phys. Lett. Abbreviated Journal Appl. Phys. Lett.
Volume 91 Issue 6 Pages 062504 (1 to 3)
Keywords (up) NbN films, nanofilms
Abstract The authors have realized NbN (100) nanofilms on a 3C-SiC (100)/Si(100) substrate by dc reactive magnetron sputtering at 800°C. High-resolution transmission electron microscopy (HRTEM) is used to characterize the films, showing a monocrystalline structure and confirming epitaxial growth on the 3C-SiC layer. A film ranging in thickness from 3.4to4.1nm shows a superconducting transition temperature of 11.8K, which is the highest reported for NbN films of comparable thickness. The NbN nano-films on 3C-SiC offer a promising alternative to improve terahertz detectors. For comparison, NbN nanofilms grown directly on Si substrates are also studied by HRTEM.

The authors acknowledge S. V. Svetchnikov at National Centre for HRTEM at Delft, who prepared the specimens for HRTEM inspections. This work was supported by the EU through RadioNet and INTAS.
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Call Number Serial 1425
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