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Chulcova, G. M.; Ptitsina, N. G.; Gershenzon, E. M.; Gershenzon, M. E.; Sergeev, A. V. Effect of the interference between electron-phonon and electron-impurity (boundary) scattering on resistivity Nb, Al, Be films 1996 Czech J. Phys. 46 2489-2490 details   doi
Maslennikov, S. N.; Morozov, D. V.; Ozhegov, R. V.; Smirnov, K. V.; Okunev, O. V.; Gol’tsman, G. N. Imaging system for submillimeter wave range based on AlGaAs/GaAs hot electron bolometer mixers 2004 Proc. 5-th MSMW 2 558-560 details   doi
Shangina, E. L.; Smirnov, K. V.; Morozov, D. V.; Kovalyuk, V. V.; Goltsman, G. N.; Verevkin, A. A.; Toropov, A. I.; Mauskopf, P. Concentration dependence of energy relaxation time in AlGaAs/GaAs heterojunctions: direct measurements 2011 Semicond. Sci. Technol. 26 025013 details   doi
Venkatasubramanian, Chandrasekaran; Cabarcos, Orlando M.; Allara, David L. Horn, Mark W.; Ashok, S. Correlation of temperature response and structure of annealed VOx thin films for IR detector applications 2009 J. Vac. Sci. Technol. A 27 6 details   openurl
Mannino, Giovanni; Spinella, Corrado; Ruggeri, Rosa; La Magna, Antonino; Fisicaro, Giuseppe; Fazio, Enza; Neri, Fortunato; Privitera, Vittorio Crystallization of implanted amorphous silicon during millisecond annealing by infrared laser irradiation 2010 Applied Physics Letters 97 3 details   openurl
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