Records |
Author |
Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Gol’tsman, G. N.; Gershenzon, E. M.; Ingvesson, K. S. |
Title |
Direct measurements of energy relaxation times on an AlGaAs/GaAs heterointerface in the range 4.2–50 K |
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Journal Article |
Year |
1996 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
Volume |
64 |
Issue |
5 |
Pages |
404-409 |
Keywords |
2DEG, AlGaAs/GaAs heterostructures |
Abstract |
The temperature dependence of the energy relaxation time τe (T) of a two-dimensional electron gas at an AlGaAs/GaAs heterointerface is measured under quasiequilibrium conditions in the region of the transition from scattering by acoustic phonons to scattering with the participation of optical phonons. The temperature interval of constant τe, where scattering by the deformation potential predominates, is determined. In the preceding, low-temperature region, where piezoacoustic and deformation-potential-induced scattering processes coexist, τ e decreases slowly with increasing temperature. Optical phonons start to participate in the scattering processes at T∼25 K (the characteristic phonon lifetime was equal to τLOτ4.5 ps). The energy losses calculated from the τe data in a model with an effective nonequilibrium electron temperature agree with the published data obtained under strong heating conditions. |
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0021-3640 |
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http://jetpletters.ru/ps/981/article_14955.shtml (“Прямые измерения времен энергетической релаксации на гетерогранице AlGaAs/GaAs в диапазоне 4.2 – 50 К”) |
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1608 |
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Verevkin, A. A.; Ptitsina, N. G.; Chulcova, G. M.; Gol'tsman, G. N.; Gershenzon, E. M.; Yngvesson, K. S. |
Title |
Direct measurements of energy relaxation time of electrons in AlGaAs/GaAs heterostructures under quasi-equilibrium conditions |
Type |
Journal Article |
Year |
1996 |
Publication |
Surface Science |
Abbreviated Journal |
Surface Science |
Volume |
361-362 |
Issue |
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Pages |
569-573 |
Keywords |
2DEG, AlGaAs/GaAs heterostructures |
Abstract |
For the first time, results are presented of a direct measurement of the energy relaxation time τε of 2D electrons in an AlGaAs/GaAs heterojunction at T = 1 and 5–20 K. A weak temperature dependence of τε for the T > 4K range and a linear temperature dependence of the reciprocal of τε for T < 4K have been observed. The linear dependence τε−1 ≈ T in the Bloch-Gruneisen regime is direct evidence of the predominance of the piezo-electric mechanism of electron-phonon interaction in non-elastic electron scattering processes. The values of τε in this regime are in very good agreement with the results of the Karpus theory. At higher temperatures, where the deformation-potential scattering becomes noticeable, a substantial disagreement between the experimental data and the theoretical results is observed. |
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0039-6028 |
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no |
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1609 |
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Author |
Verevkin, A. A.; Ptitsina, N. G.; Chulcova, G. M.; Gol'Tsman, G. N.; Gershenzon, E. M.; Yngvesson, K. S. |
Title |
Determination of the limiting mobility of a two-dimensional electron gas in AlxGa1-xAs/GaAs heterostructures and direct measurement of the energy relaxation time |
Type |
Journal Article |
Year |
1996 |
Publication |
Phys. Rev. B Condens. Matter. |
Abbreviated Journal |
Phys. Rev. B Condens. Matter. |
Volume |
53 |
Issue |
12 |
Pages |
R7592-R7595 |
Keywords |
2DEG, AlGaAs/GaAs heterostructures |
Abstract |
We present results for a method to measure directly the energy relaxation time (τe) for electrons in a single AlxGa1−xAs/GaAs heterojunction; measurements were performed from 1.6 to 15 K under quasiequilibrium conditions. We find τeαT−1 below 4 K, and τe independent of T above 4 K. We have also measured the energy-loss rate, ⟨Q⟩, by the Shubnikov-de Haas technique, and find ⟨Q⟩α(T3e−T3) for T<~4.2 K; Te is the electron temperature. The values and temperature dependence of τe and ⟨Q⟩ for T<4 K agree with calculations based on piezoelectric and deformation potential acoustic phonon scattering. At 4.2 K, we can also estimate the momentum relaxation time, τm, from our measured τe. This leads to a preliminary estimate of the phonon-limited mobility at 4.2 K of μ=3×107 cm2/Vs (ns=4.2×1011 cm−2), which agrees well with published numerical calculations, as well as with an earlier indirect estimate based on measurements on a sample with much higher mobility. |
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0163-1829 |
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PMID:9982274 |
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1612 |
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Verevkin, A. I.; Ptitsina, N. G.; Chulkova, G. M.; Gol'tsman, G. N.; Gershenzon, E. M.; Yngvesson, K. S. |
Title |
Electron energy relaxation in a 2D channel in AlGaAs-GaAs heterostructures under quasiequilibrium conditions at low temperatures |
Type |
Journal Article |
Year |
1995 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
Volume |
61 |
Issue |
7 |
Pages |
591-595 |
Keywords |
2DEG, AlGaAs/GaAs heterostructures |
Abstract |
The energy relaxation time of 2D electrons, Te, has been measured under quasiequilibrium conditions in AlGaAs—GaAs heterojunctions over the temperature range T= 1.5—20 K. At T> 4 K, Te depends only weakly on the temperature, while at T< 4 K 7;'(T) there is a dependence fr; lNT. A linear dependence 7: 1 (T) in the Bloch—-Grfineisen temperature region (T< 5 K) is unambiguous evidence that a piezoacoustic mechanism of an electron—phonon interaction is predominant in the inelastic scattering of electrons. The values of T6 in this temperature range agree very accurately with theoretical results reported by Karpus [Sov. Phys. Semicond. 22 (1988)]. At higher temperatures, where scat—tering by deformation acoustic phonons becomes substantial, there is a significant discrepancy between the experimental and theoretical re-sults. |
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1624 |
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Гольцман, Г. Н.; Смирнов, К. В. |
Title |
По итогам проектов российского фонда фундаментальных исследований. Проект РФФИ # 98-02-16897 Электрон-фононное взаимодействие в двумерном электронном газе полупроводниковых гетероструктур при низких температурах |
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Journal Article |
Year |
2001 |
Publication |
Письма в ЖЭТФ |
Abbreviated Journal |
Письма в ЖЭТФ |
Volume |
74 |
Issue |
9 |
Pages |
532-538 |
Keywords |
2DEG, AlGaAs/GaAs heterostructures |
Abstract |
Рассмотрены теоретические и экспериментальные работы, посвященные изучению электрон-фононного взаимодействия в двумерном электронном газе полупроводниковых гетероструктур при низких температурах в случае сильного разогрева в электрическом поле, в квазиравновесных условиях и в квантующем магнитном поле, перпендикулярном 2D слою. |
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Duplicated as 1541: “Electron-phonon interaction in a two-dimensional electron gas of semiconductor heterostructures at low temperatures” |
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1832 |
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Шангина, Е. Л.; Смирнов, К. В.; Морозов, Д. В.; Ковалюк, В. В.; Гольцман, Г. Н.; Веревкин, А. А.; Торопов, А. И. |
Title |
Концентрационная зависимость полосы преобразования смесителей субмиллиметрового диапазона на основе наноструктур AlGaAs/GaAs |
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Journal Article |
Year |
2010 |
Publication |
Изв. РАН Сер. Физ. |
Abbreviated Journal |
Изв. РАН Сер. Физ. |
Volume |
74 |
Issue |
1 |
Pages |
110-112 |
Keywords |
2DEG AlGaAs/GaAs heterostructures, THz heterodyne detectors, IF bandwidth |
Abstract |
Методом субмиллиметровой спектроскопии с высоким временным разрешением при Т = 4.2 К измерена концентрационная зависимость полосы преобразования гетеродинного детектирования гетероструктур AlGaAs/GaAs с двумерным электронным газом. С увеличением концентрации двумерных электронов ns = (1.6–6.6) · 1011см-2 ширина полосы преобразования f3dB уменьшается от 245 до 145 МГц. В исследованной области концентраций наблюдается зависимость f3dB , обусловленная рассеянием электронов на деформационном потенциале акустических фононов и пьезоэлектрическим рассеянием. |
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Russian |
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Duplicated as 1217 |
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RPLAB @ gujma @ |
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642 |
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Shangina, E. L.; Smirnov, K. V.; Morozov, D. V.; Kovalyuk, V. V.; Gol’tsman, G. N.; Verevkin, A. A.; Toropov, A. I. |
Title |
Concentration dependence of the intermediate frequency bandwidth of submillimeter heterodyne AlGaAs/GaAs nanostructures |
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Journal Article |
Year |
2010 |
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Bull. Russ. Acad. Sci. Phys. |
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Bull. Russ. Acad. Sci. Phys. |
Volume |
74 |
Issue |
1 |
Pages |
100-102 |
Keywords |
2DEG AlGaAs/GaAs heterostructures, THz heterodyne detectors, IF bandwidth |
Abstract |
The concentration dependence of the intermediate frequency bandwidth of heterodyne AlGaAs/GaAs detectors with 2D electron gas is measured using submillimeter spectroscopy with high time resolution at T= 4.2 K. The intermediate frequency bandwidth f3dBfalls from 245 to 145 MHz with increasing concentration of 2D electrons n s = (1.6-6.6) × 10[su11] cm-2. The dependence f3dB ≈ n s – 0.04±is observed in the studied concentration range; this dependence is determined by electron scattering by the deformation potential of acoustic phonons and piezoelectric scattering. |
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1062-8738 |
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1217 |
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Morozov, D. V.; Smirnov, K. V.; Smirnov, A. V.; Lyakhov, V. A.; Goltsman, G. N. |
Title |
A millimeter-submillimeter phonon-cooled hot-electron bolometer mixer based on two-dimensional electron gas in an AlGaAs/GaAs heterostructure |
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Journal Article |
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2005 |
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Semicond. |
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Semicond. |
Volume |
39 |
Issue |
9 |
Pages |
1082-1086 |
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2D electron gas, AlGaAs/GaAs heterostructures, mixers |
Abstract |
Experimental results obtained by studying the main characteristics of a millimeter-submillimeter wave mixer based on the hot-electron effect in a two-dimensional electron gas in a AlGaAs/GaAs heterostructure with a phonon-scattering cooling mechanism for charge carriers are reported. The gain bandwidth of the mixer is 4 GHz, the internal conversion losses are 13 dB, and the optimum local-oscillator power is 0.5 μW (for a mixer area of 1 μm2). It is shown that a millimeter-submillimeter-wave receiver with a noise temperature of 1900 K can be developed on the basis of a AlGaAs/GaAs mixer. This mixer also appears to be promising for use in array receiver elements. |
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1063-7826 |
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1463 |
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Финкель, М. И.; Масленников, С. Н.; Гольцман, Г. Н. |
Title |
Концепция приёмного комплекса космического радиотелескопа «Миллиметрон» |
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2007 |
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Известия высших учебных заведений. Радиофизика |
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50 |
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10-11 |
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924-934 |
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RPLAB @ s @ mix_review_2007_rus |
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410 |
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Финкель, М. И.; Масленников, С. Н.; Гольцман, Г. Н. |
Title |
Супергетеродинные терагерцовые приёмники со сверхпроводниковым смесителем на электронном разогреве |
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Journal Article |
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2005 |
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Известия высших учебных заведений. Радиофизика |
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48 |
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10 |
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964-970 |
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Duplicated as 381 |
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380 |
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