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| Author |
Банная, В. Ф.; Веселова, Л. И.; Гершензон, Е. М. |
| Title |
Особенности температурной зависимости холловской подвижности в легированных и некомпенсированных полупроводниках |
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Journal Article |
| Year |
1989 |
Publication |
Физика и техника полупроводников |
Abbreviated Journal |
Физика и техника полупроводников |
| Volume |
23 |
Issue |
2 |
Pages |
338-345 |
Keywords  |
weakly compensated Si, Ge, doped, Hall mobility |
| Abstract |
На примере легированного и слабо компенсированного Si⟨B⟩ проведены исследования особенностей температурной зависимости подвижности при различных механизмах рассеяния. Уточнен метод определения концентрации компенсирующей примеси по μI(T). Полученные результаты обсуждаются и для Ge. |
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1758 |
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Kovalyuk, V.; Ferrari, S.; Kahl, O.; Semenov, A.; Lobanov, Yu; Shcherbatenko, M.; Korneev, A; Pernice, W.; Goltsman, G. |
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Waveguide integrated superconducting single-photon detector for on-chip quantum and spectral photonic application |
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Conference Volume |
| Year |
2017 |
Publication |
Proc. SPBOPEN |
Abbreviated Journal |
Proc. SPBOPEN |
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421-422 |
| Keywords |
waveguide, SSPD, SNSPD |
| Abstract |
By adopting a travelling-wave geometry approach, integrated superconductor- nanophotonic devices were fabricated. The architecture consists of a superconducting NbN- nanowire atop of a silicon nitride (Si 3 N 4 ) nanophotonic waveguide. NbN-nanowire was operated as a single-photon counting detector, with up to 92% on-chip detection efficiency (OCDE), in the coherent mode, serving as a highly sensitive IR heterodyne mixer with spectral resolution (f/df) greater than 10^6 in C-band at 1550 nm wavelength. |
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St. Petersburg, Russia |
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Duplicated as 1140 |
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1256 |
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Goltsman, G.; Naumov, A. V.; Gladush, M. G.; Karimullin, K. R. |
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Quantum photonic integrated circuits with waveguide integrated superconducting nanowire single-photon detectors |
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Conference Article |
| Year |
2018 |
Publication |
EPJ Web Conf. |
Abbreviated Journal |
EPJ Web Conf. |
| Volume |
190 |
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02004 (1 to 2) |
| Keywords |
waveguide SSPD, SNSPD |
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We show the design, a history of development as well as the most successful and promising approaches for QPICs realization based on hybrid nanophotonic-superconducting devices, where one of the key elements of such a circuit is a waveguide integrated superconducting single-photon detector (WSSPD). The potential of integration with fluorescent molecules is discussed also. |
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2100-014X |
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1320 |
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Goltsman, Gregory |
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Superconducting thin film nanostructures as terahertz and infrared heterodyne and direct detectors |
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Conference Article |
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2017 |
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16th ISEC |
Abbreviated Journal |
16th ISEC |
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Th-I-QTE-03 (1 to 3) |
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waveguide SSPD, SNSPD |
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We present our recent achievements in the development of superconducting nanowire single-photon detectors (SNSPDs) integrated with optical waveguides on a chip. We demonstrate both single-photon counting with up to 90% on-chipquantum-efficiency (OCDE), and the heterodyne mixing with a close to the quantum limit sensitivity at the telecommunication wavelength using single device. |
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IEEE/CSC & ESAS Superconductivity News Forum |
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1745 |
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Pernice, W. H. P.; Schuck, C.; Minaeva, O.; Li, M.; Goltsman, G. N.; Sergienko, A. V.; Tang, H. X. |
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High-speed and high-efficiency travelling wave single-photon detectors embedded in nanophotonic circuits |
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Journal Article |
| Year |
2012 |
Publication |
Nat. Commun. |
Abbreviated Journal |
Nat. Commun. |
| Volume |
3 |
Issue |
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Pages |
1325 (1 to 10) |
| Keywords |
waveguide SSPD |
| Abstract |
Ultrafast, high-efficiency single-photon detectors are among the most sought-after elements in modern quantum optics and quantum communication. However, imperfect modal matching and finite photon absorption rates have usually limited their maximum attainable detection efficiency. Here we demonstrate superconducting nanowire detectors atop nanophotonic waveguides, which enable a drastic increase of the absorption length for incoming photons. This allows us to achieve high on-chip single-photon detection efficiency up to 91% at telecom wavelengths, repeatable across several fabricated chips. We also observe remarkably low dark count rates without significant compromise of the on-chip detection efficiency. The detectors are fully embedded in scalable silicon photonic circuits and provide ultrashort timing jitter of 18 ps. Exploiting this high temporal resolution, we demonstrate ballistic photon transport in silicon ring resonators. Our direct implementation of a high-performance single-photon detector on chip overcomes a major barrier in integrated quantum photonics. |
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Department of Electrical Engineering, Yale University, New Haven, Connecticut 06511, USA |
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2041-1723 |
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PMID:23271658; PMCID:PMC3535416 |
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1375 |
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