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Romanov, N. R.; Zolotov, P. I.; Smirnov, K. V. |
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Title |
Development of disordered ultra-thin superconducting vanadium nitride films |
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Conference Article |
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Year |
2019 |
Publication |
Proc. 8th Int. Conf. Photonics and Information Optics |
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Proc. 8th Int. Conf. Photonics and Information Optics |
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425-426 |
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VN films |
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We present the results of development and research of superconducting vanadium nitride VN films ~10 nm thick having different level of disorder. It is showed that both silicon substrate temperature T sub in process of magnetron sputtering and total gas pressure P affect superconducting transition temperature of sputtered films and R 300 /R 20 ratio defining their level of disorder. VN films suitable for development of superconducting single-photon detectors on their basis are obtained. |
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978-5-7262-2536-4 |
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http://fioconf.mephi.ru/files/2018/12/FIO2019-Sbornik.pdf |
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1802 |
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Золотов, Ф. И.; Смирнов, К. В. |
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Title |
Особенности осаждения разупорядоченных сверхтонких плёнок нитрида ванадия |
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Conference Article |
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Year |
2019 |
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Межвузовская научно-техническая конференция студентов, аспирантов и молодых специалистов им. Е. В. Арменского |
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204-205 |
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VN films |
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В работе изучены особенности роста сверхтонких плёнок нитрида ванадия толщиной ~10 нм. Обнаружено, что при изменении температуры подложки и общего давления газов в процессе осаждения плёнок меняется значение их поверхностного сопротивления вблизи перехода к сверхпроводящему состоянию. |
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Москва |
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МИЭМ НИУ ВШЭ |
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1805 |
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Райтович, А. А.; Пентин, И. В.; Золотов, Ф. И.; Селезнев, В. А.; Вахтомин, Ю. Б.; Смирнов, К. В. |
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Title |
Время энергетической релаксации электронов в сверхпроводниковых VN наноструктурах |
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Conference Article |
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2018 |
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Сборник трудов 13 Всероссийской конференции молодых ученых |
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236-238 |
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VN films |
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Саратовский филиал ИРЭ им. В.А. Котельникова РАН |
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Техно-Декор |
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Russian |
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Наноэлектроника, нанофотоника и нелинейная физика |
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http://nnnph.ru/data/documents/Sborni-trudov-NNNF-2018.pdf |
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1807 |
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Гершензон, Е. М.; Семенов, И. Т.; Фогельсон, М. С. |
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Спин-решеточная релаксация доноров фосфора в кремнии при одноосной деформации образца |
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Journal Article |
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Year |
1985 |
Publication |
Физика и техника полупроводников |
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Физика и техника полупроводников |
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19 |
Issue |
9 |
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1696-1698 |
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uniaxial pressure, Ge, phosphorus donors, spin-lattice relaxation |
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1760 |
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Mel’nikov, A. P.; Gurvich, Y. A.; Shestakov, L. N.; Gershenzon, E. M. |
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Magnetic field effects on the nonohmic impurity conduction of uncompensated crystalline silicon |
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Journal Article |
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2001 |
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Jetp Lett. |
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Jetp Lett. |
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73 |
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1 |
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44-47 |
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Keywords |
uncompensated crystalline silicon, nonohmic impurity conduction, magnetic field |
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The impurity conduction of a series of crystalline silicon samples with the concentration of major impurity N ≈ 3 × 1016 cm−3 and with a varied, but very small, compensation K was measured as a function of the electric field E in various magnetic fields H-σ(H, E). It was found that, at K < 10−3 and in moderate E, where these samples are characterized by a negative nonohmicity (dσ(0, E)/dE < 0), the ratio σ(H, E)/σ(0, E) > 1 (negative magnetoresistance). With increasing E, these inequalities are simultaneously reversed (positive nonohmicity and positive magnetoresistance). It is suggested that both negative and positive nonohmicities are due to electron transitions in electric fields from impurity ground states to states in the Mott-Hubbard gap. |
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0021-3640 |
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1752 |
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Finkel, M.; Thierschmann, H.; Galatro, L.; Katan, A. J.; Thoen, D. J.; de Visser, P. J.; Spirito, M.; Klapwijk, T. M. |
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Performance of THz components based on microstrip PECVD SiNx technology |
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Journal Article |
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2017 |
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IEEE Trans. THz Sci. Technol. |
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IEEE Trans. THz Sci. Technol. |
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7 |
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6 |
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765-771 |
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transmission line measurements, power transmission lines, dielectrics, couplers, submillimeter wave circuits, coplanar waveguides, micromechanical devices |
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We present a performance analysis of passive THz components based on Microstrip transmission lines with a 2-μmthin plasma-enhanced chemical vapor deposition grown silicon nitride (PECVD SiNX) dielectric layer. A set of thru-reflect-line calibration structures is used for basic transmission line characterizations. We obtain losses of 9 dB/mm at 300 GHz. Branchline hybrid couplers are realized that exhibit 2.5-dB insertion loss, 1-dB amplitude imbalance, and -26-dB isolation, in agreement with simulations. We use the measured center frequency to determine the dielectric constant of the PECVD SiN x , which yields 5.9. We estimate the wafer-to-wafer variations to be of the order of 1%. Directional couplers are presented which exhibit -12-dB transmission to the coupled port and -26 dB to the isolated port. For transmission lines with 5-μm-thin silicon nitride (SiN x ), we observe losses below 4 dB/mm. The thin SiN x dielectric membrane makes the THz components compatible with scanning probe microscopy cantilevers allowing the application of this technology in on-chip circuits of a THz near-field microscope. |
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2156-342X |
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1294 |
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Gorokhov, G.; Bychanok, D.; Gayduchenko, I.; Rogov, Y.; Zhukova, E.; Zhukov, S.; Kadyrov, L.; Fedorov, G.; Ivanov, E.; Kotsilkova, R.; Macutkevic, J.; Kuzhir, P. |
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THz spectroscopy as a versatile tool for filler distribution diagnostics in polymer nanocomposites |
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2020 |
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Polymers (Basel) |
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Polymers (Basel) |
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12 |
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12 |
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3037 (1 to 14) |
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THz spectroscopy; nanocomposites, percolation threshold, time-domain spectroscopy, time-domain spectrometer, TDS |
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Polymer composites containing nanocarbon fillers are under intensive investigation worldwide due to their remarkable electromagnetic properties distinguished not only by components as such, but the distribution and interaction of the fillers inside the polymer matrix. The theory herein reveals that a particular effect connected with the homogeneity of a composite manifests itself in the terahertz range. Transmission time-domain terahertz spectroscopy was applied to the investigation of nanocomposites obtained by co-extrusion of PLA polymer with additions of graphene nanoplatelets and multi-walled carbon nanotubes. The THz peak of permittivity's imaginary part predicted by the applied model was experimentally shown for GNP-containing composites both below and above the percolation threshold. The physical nature of the peak was explained by the impact on filler particles excluded from the percolation network due to the peculiarities of filler distribution. Terahertz spectroscopy as a versatile instrument of filler distribution diagnostics is discussed. |
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Institute of Photonics, University of Eastern Finland, Yliopistokatu 7, FI-80101 Joensuu, Finland |
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English |
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2073-4360 |
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PMID:33353036; PMCID:PMC7767186 |
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1780 |
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Семенов, А. В.; Девятов, И. А.; Рябчун, С. А.; Масленников, С. Н.; Масленникова, А. С.; Ларионов, П. А.; Воронов, Б. М.; Чулкова, Г. М. |
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Поглощение терагерцового электромагнитного излучения в “грязной” сверхпроводниковой пленке при произвольном виде спектральных функций |
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2011 |
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Ж. Радиоэлектрон. |
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10 |
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7 |
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terahertz electromagnetic radiation; superconductors; detectors of terahertz range |
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A problem of absorption of high-frequency electromagnetic field in dirty superconductor is treated within Keldysh technic. Expression for the source term in the kinetic equation for quasiparticle distribution function is derived. The result is significant for deriving a consistent microscopic theory of superconducting detectors for terahertz frequency range, perspective detectors on kinetic inductance of current-biased superconducting strip and on Josephson inductance of tunnel.
В технике Келдыша рассмотрена задача о поглощении мощности высокочастотного электромагнитного поля в сверхпроводнике, удовлетворяющем условию грязного предела. Получено выражение для члена источника в кинетическом уравнении для функции распределения квазичастиц, справедливое при произвольном виде спектральных функций. Этот результат имеет значение для развития последовательной микроскопической теории сверхпроводниковых детекторов излучения терагерцового диапазона, в частности, перспективных детекторов на кинетической индуктивности смещённой током сверхпроводниковой полоски и джозефсоновской индуктивности туннельного контакта. |
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Duplicated as 1117 |
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RPLAB @ gujma @ |
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713 |
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Semenov, A. V.; Devyatov, I. A.; Ryabchun, S. A.; Maslennikov, S. N.; Maslennikova, A. S.; Larionov, P. A.; Voronov, B. M.; Chulkova, G. M. |
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Absorption of terahertz electromagnetic radiation in dirty superconducting film at arbitrary type of the spectral functions |
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2011 |
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Rus. J. Radio Electron. |
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Rus. J. Radio Electron. |
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10 |
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terahertz electromagnetic radiation; superconductors; detectors of terahertz range |
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A problem of absorption of high-frequency electromagnetic field in dirty superconductor is treated within Keldysh technic. Expression for the source term in the kinetic equation for quasiparticle distribution function is derived. The result is significant for deriving a consistent microscopic theory of superconducting detectors for terahertz frequency range, perspective detectors on kinetic inductance of current-biased superconducting strip and on Josephson inductance of tunnel. |
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1117 |
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Emelianov, A. V.; Nekrasov, N. P.; Moskotin, M. V.; Fedorov, G. E.; Otero, N.; Romero, P. M.; Nevolin, V. K.; Afinogenov, B. I.; Nasibulin, A. G.; Bobrinetskiy, I. I. |
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Individual SWCNT transistor with photosensitive planar junction induced by two‐photon oxidation |
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2021 |
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Adv. Electron. Mater. |
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Adv. Electron. Mater. |
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7 |
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3 |
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2000872 |
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SWCNT transistors |
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The fabrication of planar junctions in carbon nanomaterials is a promising way to increase the optical sensitivity of optoelectronic nanometer-scale devices in photonic connections, sensors, and photovoltaics. Utilizing a unique lithography approach based on direct femtosecond laser processing, a fast and easy technique for modification of single-walled carbon nanotube (SWCNT) optoelectronic properties through localized two-photon oxidation is developed. It results in a novel approach of quasimetallic to semiconducting nanotube conversion so that metal/semiconductor planar junction is formed via local laser patterning. The fabricated planar junction in the field-effect transistors based on individual SWCNT drastically increases the photoresponse of such devices. The broadband photoresponsivity of the two-photon oxidized structures reaches the value of 2 × 107 A W−1 per single SWCNT at 1 V bias voltage. The SWCNT-based transistors with induced metal/semiconductor planar junction can be applied to detect extremely small light intensities with high spatial resolution in photovoltaics, integrated circuits, and telecommunication applications. |
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2199-160X |
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