| |
Author |
Title |
Year |
Publication |
Volume |
Pages |
Links |
|
|
Bandurin, D. A.; Gayduchenko, I.; Cao, Y.; Moskotin, M.; Principi, A.; Grigorieva, I. V.; Goltsman, G.; Fedorov, G.; Svintsov, D. |
Dual origin of room temperature sub-terahertz photoresponse in graphene field effect transistors |
2018 |
Appl. Phys. Lett. |
112 |
141101 (1 to 5) |
|
|
|
Voevodin, E. I.; Gershenzon, E. M.; Goltsman, G. N.; Ptitsina, N. G.; Chulkova, G. M. |
Capture of free holes by charged acceptors in uniaxially deformed Ge |
1988 |
Fizika i Tekhnika Poluprovodnikov |
22 |
540-543 |
|
|
|
Gershenzon, E. M.; Goltsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G. |
Kinetics of submillimeter impurity and exciton photoconduction in Ge |
1982 |
Optics and Spectroscopy |
52 |
454-455 |
|
|
|
Gershenzon, E.; Goltsman, G.; Orlov, L.; Ptitsina, N. |
Population of excited-states of small admixtures in germanium |
1978 |
Izv. Akad. Nauk SSSR, Seriya Fizicheskaya |
42 |
1154-1159 |
|
|
|
Gershenzon, E. M.; Goltsman, G. N. |
Zeeman effect in excited-states of donors in germanium |
1972 |
Sov. Phys. Semicond. |
6 |
509 |
|
