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Author Kawano, Yukio; Ishibashi, Koji url  doi
openurl 
  Title An on-chip near-field terahertz probe and detector Type Journal Article
  Year 2008 Publication Nature Photonics Abbreviated Journal Nature Photon  
  Volume 2 Issue 10 Pages 618-621  
  Keywords single molecule, terahertz, THz, near-field, microscopy, imaging, 2DEG, GaAs/AlGaAs, detector, applications  
  Abstract The advantageous properties of terahertz waves, such as their transmission through objects opaque to visible light, are attracting attention for imaging applications. A promising approach for achieving high spatial resolution is the use of near-field imaging. Although this method has been well established in the visible and microwave regions, it is challenging to perform in the terahertz region. In the terahertz techniques investigated to date, detectors have been located remotely from the probe, which degrades sensitivity, and the influence of far-field waves is unavoidable. Here we present a new integrated detection device for terahertz near-field imaging in which all the necessary detection components — an aperture, a probe and a terahertz detector — are integrated on one semiconductor chip, which is cryogenically cooled. This scheme allows highly sensitive, high-resolution detection of the evanescent field alone and promises new capabilities for high-resolution terahertz imaging.  
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  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1749-4885 ISBN Medium  
  Area Expedition Conference  
  Notes (up) Approved no  
  Call Number Serial 570  
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Author An, Zhenghua; Chen, Jeng-Chung; Ueda, T.; Komiyama, S.; Hirakawa, K. openurl 
  Title Infrared phototransistor using capacitively coupled two-dimensional electron gas layers Type Journal Article
  Year 2005 Publication Applied Physics Letters Abbreviated Journal Appl. Phys. Lett.  
  Volume 86 Issue Pages 172106 - 172106-3  
  Keywords 2DEG  
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  Notes (up) Approved no  
  Call Number RPLAB @ akorneev @ Serial 603  
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Author Shah, Jagdeep; Pinczuk, A.; Gossard, A. C.; Wiegmann, W. openurl 
  Title Energy-loss rates for hot electrons and holes in GaAs quantum wells Type Journal Article
  Year 1985 Publication Phys. Rev. Lett. Abbreviated Journal Phys. Rev. Lett.  
  Volume 54 Issue Pages 2045-2048  
  Keywords 2DEG, GaAs/AlGaAs, heat flow, electron-phonon, hole-phonon, carrier-phonon, interactions  
  Abstract We report the first direct determination of carrier-energy-loss rates in a semiconductor. These measurements provide fundamental insight into carrier-phonon interactions in semiconductors. Unexpectedly large differences are found in the energy-loss rates for electrons and holes in GaAs/AlGaAs quantum wells. This large difference results from an anomalously low electron-energy-loss rate, which we attribute to the presence of nonequilibrium optical phonons rather than the effects of reduced dimensionality or dynamic screening.  
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  Area Expedition Conference  
  Notes (up) Approved no  
  Call Number Serial 633  
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Author Shaha, Jagdeep; Pinczukb, A.; Gossardb, A. C.; Wiegmannb, W. openurl 
  Title Hot carrier energy loss rates in GaAs quantum wells: large differences between electrons and holes Type Journal Article
  Year 1985 Publication Phys. B+C Abbreviated Journal  
  Volume 134 Issue 1-3 Pages 174-178  
  Keywords 2DEG, GaAs/AlGaAs, heat flow, electron-phonon, hole-phonon, carrier-phonon, interactions  
  Abstract The first direct and separate determination of the hot electron and hot hole energy loss rates to the lattice shows unexpectedly large differences between electrons and holes in GaAs quantum wells. This large difference results from an anomalously low electron energy loss rate, which we attribute to the presence of non-equilibrium optical phonon rather than the effects of reduced dimensionality or dynamic screening. A model calculation of hot phonon effects is presented.  
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  Notes (up) Approved no  
  Call Number Serial 634  
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Author Uchiki, Hisao; Kobayashi, Takayoshi; Sakaki, Hiroyuki openurl 
  Title Photoluminescence and energy‐loss rates in GaAs quantum wells under high‐density excitation Type Journal Article
  Year 1987 Publication J. Appl. Phys. Abbreviated Journal  
  Volume 62 Issue 3 Pages 1010-1016  
  Keywords 2DEG, GaAs/AlGaAs, heat flow, electron-phonon, hole-phonon, carrier-phonon, interactions  
  Abstract The time‐resolved luminescence spectra from excited conduction subbands in three samples of multi‐quantum‐well GaAs/AlxGa1-xAs (x=0.3 and 1) semiconductors with several well widths and barrier heights were obtained under high‐density excitations by a 30‐ps pulsed laser at 532 nm, which generated electron–hole pairs to the concentration of 1010–1013/cm2 per well per pulse at 77 K. The temperature and the Fermi energy of electron were determined by fitting best the constructed time‐resolved spectrum to the observed, and the time‐dependent electron energy was obtained by using these parameters. The energy‐loss rates of hot electrons are at least twice smaller than the calculated ones induced by the electron‐polar phonon scattering, including the screening effect due to the high carrier density.  
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  Notes (up) Approved no  
  Call Number Serial 635  
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Author Cao, Q.; Yoon, S. F.; Tong, C. Z.; Ngo, C. Y.; Liu, C. Y.; Wang, R.; Zhao, H. X. openurl 
  Title Two-state competition in 1.3 μm multilayer InAs/InGaAs quantum dot lasers Type Journal Article
  Year 2009 Publication Applied Physics Letters Abbreviated Journal Appl. Phys. Lett.  
  Volume 95 Issue 19 Pages 3  
  Keywords 2DEG  
  Abstract The competition of ground state (GS) and excited state (ES) is investigated from the as-grown and thermally annealed 1.3 μm ten-layer p-doped InAs/GaAs quantum dot (QD) lasers. The modal gain competition between GS and ES are measured and analyzed around the ES threshold characteristics. Our results show that two-state competition is more significant in devices with short cavity length operating at high temperature. By comparing the as-grown and annealed devices, we demonstrate enhanced GS and suppressed ES lasing from the QD laser annealed at 600 °C for 15 s.  
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  Notes (up) Approved no  
  Call Number RPLAB @ gujma @ Serial 673  
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Author Shangina, E. L.; Smirnov, K. V.; Morozov, D. V.; Kovalyuk, V. V.; Gol’tsman, G. N.; Verevkin, A. A.; Toropov, A. I. url  doi
openurl 
  Title Concentration dependence of the intermediate frequency bandwidth of submillimeter heterodyne AlGaAs/GaAs nanostructures Type Journal Article
  Year 2010 Publication Bull. Russ. Acad. Sci. Phys. Abbreviated Journal Bull. Russ. Acad. Sci. Phys.  
  Volume 74 Issue 1 Pages 100-102  
  Keywords 2DEG AlGaAs/GaAs heterostructures, THz heterodyne detectors, IF bandwidth  
  Abstract The concentration dependence of the intermediate frequency bandwidth of heterodyne AlGaAs/GaAs detectors with 2D electron gas is measured using submillimeter spectroscopy with high time resolution at T= 4.2 K. The intermediate frequency bandwidth f3dBfalls from 245 to 145 MHz with increasing concentration of 2D electrons n s = (1.6-6.6) × 10[su11] cm-2. The dependence f3dB ≈ n s – 0.04±is observed in the studied concentration range; this dependence is determined by electron scattering by the deformation potential of acoustic phonons and piezoelectric scattering.  
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  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1062-8738 ISBN Medium  
  Area Expedition Conference  
  Notes (up) Approved no  
  Call Number Serial 1217  
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Author Verevkin, A.; Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.; Chulkova, G. M.; Smirnov, K. S.; Sobolewski, R. url  openurl
  Title Direct measurements of energy relaxation times in two-dimensional structures under quasi-equilibrium conditions Type Conference Article
  Year 2002 Publication Mater. Sci. Forum Abbreviated Journal Mater. Sci. Forum  
  Volume 384-3 Issue Pages 107-116  
  Keywords 2DEG, AlGaAs/GaAs  
  Abstract A new microwave technique was successfully applied for direct studies of energy relaxation times in two-dimensional AlGaAs/GaAs structures under quasi-equilibrium conditions in the nanosecond and picosecond time scale. We report our results of energy relaxation time measurements in the temperature range 1.6-50 K, in quantum Hall effect regime in magnetic fields up to 4 T.  
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  Area Expedition Conference Materials Science Forum  
  Notes (up) Approved no  
  Call Number Serial 1536  
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Author Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Voronov, B. M.; Gol’tsman, G. N.; Gershenson, E. M.; Yngvesson, K. S. url  doi
openurl 
  Title Multiple Andreev reflection in hybrid AlGaAs/GaAs structures with superconducting NbN contacts Type Journal Article
  Year 1999 Publication Semicond. Abbreviated Journal Semicond.  
  Volume 33 Issue 5 Pages 551-554  
  Keywords 2DEG, AlGaAs/GaAs heterostructures  
  Abstract The conductivity of hybrid microstructures with superconducting contacts made of niobium nitride to a semiconductor with a two-dimensional electron gas in a AlGaAs/GaAs heterostructure has been investigated. Distinctive features of the behavior of the conductivity indicate the presence of multiple Andreev reflection at scattering centers in the normal region near the superconductor-semiconductor boundary.  
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  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1063-7826 ISBN Medium  
  Area Expedition Conference  
  Notes (up) Approved no  
  Call Number Serial 1571  
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Author Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Goltsman, G. N.; Gershenson, E. M.; Yngvesson, K. S. url  openurl
  Title Direct measurements of electron energy relaxation times at an AlGaAs/GaAs heterointerface in the optical phonon scattering range Type Conference Article
  Year 1997 Publication Proc. 4-th Int. Semicond. Device Research Symp. Abbreviated Journal Proc. 4-th Int. Semicond. Device Research Symp.  
  Volume Issue Pages 55-58  
  Keywords 2DEG, AlGaAs/GaAs heterostructures  
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  Area Expedition Conference  
  Notes (up) Approved no  
  Call Number Serial 1602  
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