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Author Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G.
Title Kinetics of electron and hole binding into excitons in germanium Type Journal Article
Year 1983 Publication Sov. Phys. JETP Abbreviated Journal Sov. Phys. JETP
Volume 57 Issue 2 Pages 369-376
Keywords Ge, electron and hole binding
Abstract The kinetics of binding of free carriers'into excitons under stationary and nonstationary conditions is studied by investigating the submillimeter photoconductivity of Ge in a wide range of temperatures and of excitation levels. It is shown that the absolute values and the temperature dependence of the binding cross section (o- T-'.' ) can be satisfactorily described by the cascade recombination theory. The value of o and its temperature dependence differ significantly from the cross sections, measured in the same manner, for capture by attracting small impurities. Under nonstationary conditions, just as in the case of recombination with shallow impurities, a signifi- cant role is played by the sticking of the carriers in highly excited states.
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Call Number Serial 1711
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Author Банная, В. Ф.; Веселова, Л. И.; Гершензон, Е. М.
Title Об одном способе определения концентрации глубоких примесей в германии Type Journal Article
Year 1983 Publication Физика и техника полупроводников Abbreviated Journal Физика и техника полупроводников
Volume 17 Issue 10 Pages 1896-1898
Keywords Ge, deep impurities
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Call Number Serial 1762
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Author Гершензон, Е. М.; Литвак-Горская, Л. Б.; Рабинович, Р. И.
Title Отрицательное магнитосопротивление в случае проводимости по верхней зоне Хаббарда Type Journal Article
Year 1983 Publication Физика и техника полупроводников Abbreviated Journal Физика и техника полупроводников
Volume 17 Issue 10 Pages 1873-1876
Keywords compensated n-InSb, Hubbard upper zone conductivity, negative magnetoresistance
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Call Number Serial 1763
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Author Гершензон, Е. М.; Мельников, А. П.; Рабинович, Р. И.; Смирнова, В. Б.
Title О возможности создания инверсной функции распределения свободных носителей в полупроводниках при захвате на мелкие нейтральные примеси Type Journal Article
Year 1983 Publication Физика и техника полупроводников Abbreviated Journal Физика и техника полупроводников
Volume 17 Issue 3 Pages 499-501
Keywords shallow neutral impurities, capture, inverse distribution function, Si
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Call Number Serial 1764
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