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Uchiki, Hisao; Kobayashi, Takayoshi; Sakaki, Hiroyuki Photoluminescence and energy‐loss rates in GaAs quantum wells under high‐density excitation 1987 J. Appl. Phys. 62 1010-1016 details   openurl
Cao, Q.; Yoon, S. F.; Tong, C. Z.; Ngo, C. Y.; Liu, C. Y.; Wang, R.; Zhao, H. X. Two-state competition in 1.3 μm multilayer InAs/InGaAs quantum dot lasers 2009 Applied Physics Letters 95 3 details   openurl
Shangina, E. L.; Smirnov, K. V.; Morozov, D. V.; Kovalyuk, V. V.; Gol’tsman, G. N.; Verevkin, A. A.; Toropov, A. I. Concentration dependence of the intermediate frequency bandwidth of submillimeter heterodyne AlGaAs/GaAs nanostructures 2010 Bull. Russ. Acad. Sci. Phys. 74 100-102 details   doi
Verevkin, A.; Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.; Chulkova, G. M.; Smirnov, K. S.; Sobolewski, R. Direct measurements of energy relaxation times in two-dimensional structures under quasi-equilibrium conditions 2002 Mater. Sci. Forum 384-3 107-116 details   url
Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Voronov, B. M.; Gol’tsman, G. N.; Gershenson, E. M.; Yngvesson, K. S. Multiple Andreev reflection in hybrid AlGaAs/GaAs structures with superconducting NbN contacts 1999 Semicond. 33 551-554 details   doi
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