|
|
Pentin, I., Finkel, M., Maslennikov, S., Vakhtomin, Y., Smirnov, K., Kaurova, N., et al. (2017). Superconducting hot-electron-bolometer mixers for the mid-IR. Rus. J. Radio Electron., (10), http://jre.cplire.ru/jre/oct17/9/text.pdf. Retrieved July 6, 2024, from http://jre.cplire.ru/jre/oct17/9/abstract_e.html
Abstract: The work presents the result of development of the NbN superconducting hot-electron-bolometer (HEB) mixer. The sensitive element of the mixer is directly coupled to mid-IR radiation, and doesn’t have planar metallic antenna. Investigations of noise characteristics of NbN HEB mixer were performed at the frequency 28.4 THz (λ = 10.6 µm) by using gas-discharge CW CO2-laser without consideration of optical and electrical losses in the heterodyne receiver. The noise temperature of NbN HEB mixer with the size of the sensitive element 10 µm × 10 µm was 2320 K (~ 1.5hν/kB) at the heterodyne frequency of 28.4 THz. The noise temperature was determined by measuring the Y-factor taking into account the term which describes fluctuations of zero-point oscillations in accordance with the fluctuation-dissipation theorem of Calle-Welton. Isothermal method was used to estimate the absorbed heterodyne radiation power which was 9 µW at the optimal operating point for the minimum noise temperature of NbN HEB mixer.
|
|
|
|
Verevkin, A. A., Ptitsina, N. G., Smirnov, K. V., Gol’tsman, G. N., Gershenzon, E. M., & Ingvesson, K. S. (1996). Direct measurements of energy relaxation times on an AlGaAs/GaAs heterointerface in the range 4.2–50 K. JETP Lett., 64(5), 404–409.
Abstract: The temperature dependence of the energy relaxation time τe (T) of a two-dimensional electron gas at an AlGaAs/GaAs heterointerface is measured under quasiequilibrium conditions in the region of the transition from scattering by acoustic phonons to scattering with the participation of optical phonons. The temperature interval of constant τe, where scattering by the deformation potential predominates, is determined. In the preceding, low-temperature region, where piezoacoustic and deformation-potential-induced scattering processes coexist, τ e decreases slowly with increasing temperature. Optical phonons start to participate in the scattering processes at T∼25 K (the characteristic phonon lifetime was equal to τLOτ4.5 ps). The energy losses calculated from the τe data in a model with an effective nonequilibrium electron temperature agree with the published data obtained under strong heating conditions.
|
|
|
|
Smirnov, K. V., Ptitsina, N. G., Vakhtomin, Y. B., Verevkin, A. A., Gol’tsman, G. N., & Gershenzon, E. M. (2000). Energy relaxation of two-dimensional electrons in the quantum Hall effect regime. JETP Lett., 71(1), 31–34.
Abstract: The mm-wave spectroscopy with high temporal resolution is used to measure the energy relaxation times τe of 2D electrons in GaAs/AlGaAs heterostructures in magnetic fields B=0–4 T under quasi-equilibrium conditions at T=4.2 K. With increasing B, a considerable increase in τe from 0.9 to 25 ns is observed. For high B and low values of the filling factor ν, the energy relaxation rate τ −1e oscillates. The depth of these oscillations and the positions of maxima depend on the filling factor ν. For ν>5, the relaxation rate τ −1e is maximum when the Fermi level lies in the region of the localized states between the Landau levels. For lower values of ν, the relaxation rate is maximum at half-integer values of τ −1e when the Fermi level is coincident with the Landau level. The characteristic features of the dependence τ −1e (B) are explained by different contributions of the intralevel and interlevel electron-phonon transitions to the process of the energy relaxation of 2D electrons.
|
|
|
|
Zolotov, P. I., Vakhtomin, Y. B., Divochiy, A. V., Seleznev, V. A., & Smirnov, K. V. (2016). Technology development of resonator-based structures for efficiency increasing of NBN detectors of IR single photons. Proc. 5th Int. Conf. Photonics and Information Optics, , 115–116.
Abstract: This paper presents a technology of fabrication of NbN superconductive single- photon detectors, using resonator structures. The main results are related to optimization of the process of NbN sputtering over substrate with metallic mirrors and SiO 2 /Si 3 N 4 layers /4 thick. Investigation of the quantum efficiency of fabricated devices at 1.6 K on 1.55 μm showed triple-magnified value compared to standard Si/NbN structures.
|
|
|
|
Zinoni, C., Alloing, B., Li, L. H., Marsili, F., Fiore, A., Lunghi, L., et al. (2007). Single-photon experiments at telecommunication wavelengths using nanowire superconducting detectors. Appl. Phys. Lett., 91(3), 031106 (1 to 3).
Abstract: The authors report fiber-coupled superconducting single-photon detectors with specifications that exceed those of avalanche photodiodes, operating at telecommunication wavelength, in sensitivity, temporal resolution, and repetition frequency. The improved performance is demonstrated by measuring the intensity correlation function g(2)(τ) of single-photon states at 1300nm produced by single semiconductor quantum dots.
This work was supported by Swiss National Foundation through the “Professeur borsier” and NCCR Quantum Photonics program, FP6 STREP “SINPHONIA” (Contract No. NMP4-CT-2005-16433), IP “QAP” (Contract No. 15848), NOE “ePIXnet,” and the Italian MIUR-FIRB program.
|
|
