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Author | Korneeva, Yuliya; Florya, Irina; Vdovichev, Sergey; Moshkova, Mariya; Simonov, Nikita; Kaurova, Natalia; Korneev, Alexander; Goltsman, Gregory | ||||
Title | Comparison of hot-spot formation in NbN and MoN thin superconducting films after photon absorption | Type | Conference Article | ||
Year | 2017 | Publication | IEEE Transactions on Applied Superconductivity | Abbreviated Journal | IEEE Transactions on Applied Superconductiv |
Volume | 27 | Issue | 4 | Pages | 5 |
Keywords | Thin film devices, Superconducitng photoncounting devices, Nanowire single-photon detectors | ||||
Abstract | In superconducting single-photon detectors SSPD the efficiency of local suppression of superconductivity and hotspot formation is controlled by diffusivity and electron-phonon interaction time. Here we selected a material, 3.6-nm-thick MoNx film, which features diffusivity close to those of NbN traditionally used for SSPD fabrication, but with electron-phonon interaction time an order of magnitude larger. In MoNx detectors we study the dependence of detection efficiency on bias current, photon energy, and strip width and compare it with NbN SSPD. We observe non-linear current-energy dependence in MoNx SSPD and more pronounced plateaus in dependences of detection efficiency on bias current which we attribute to longer electronphonon interaction time. |
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Call Number | RPLAB @ kovalyuk @ | Serial | 1114 | ||
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Author | Gayduchenko, I.; Kardakova, A.; Fedorov, G.; Voronov, B.; Finkel, M.; Jiménez, D.; Morozov, S.; Presniakov, M.; Goltsman, G. | ||||
Title | Response of asymmetric carbon nanotube network devices to sub-terahertz and terahertz radiation | Type | Journal Article | ||
Year | 2015 | Publication | J. Appl. Phys. | Abbreviated Journal | J. Appl. Phys. |
Volume | 118 | Issue | 19 | Pages | 194303 |
Keywords | terahertz detectors, asymmetric carbon nanotubes, CNT | ||||
Abstract | Demand for efficient terahertz radiation detectors resulted in intensive study of the asymmetric carbon nanostructures as a possible solution for that problem. It was maintained that photothermoelectric effect under certain conditions results in strong response of such devices to terahertz radiation even at room temperature. In this work, we investigate different mechanisms underlying the response of asymmetric carbon nanotube (CNT) based devices to sub-terahertz and terahertz radiation. Our structures are formed with CNT networks instead of individual CNTs so that effects probed are more generic and not caused by peculiarities of an individual nanoscale object. We conclude that the DC voltage response observed in our structures is not only thermal in origin. So called diode-type response caused by asymmetry of the device IV characteristic turns out to be dominant at room temperature. Quantitative analysis provides further routes for the optimization of the device configuration, which may result in appearance of novel terahertz radiation detectors. | ||||
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ISSN | 0021-8979 | ISBN | Medium | ||
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Notes | Approved | no | |||
Call Number | Serial | 1169 | |||
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Author | Semenov, A. V.; Devyatov, I. A.; Ryabchun, S. A.; Maslennikov, S. N.; Maslennikova, A. S.; Larionov, P. A.; Voronov, B. M.; Chulkova, G. M. | ||||
Title | Absorption of terahertz electromagnetic radiation in dirty superconducting film at arbitrary type of the spectral functions | Type | Journal Article | ||
Year | 2011 | Publication | Rus. J. Radio Electron. | Abbreviated Journal | Rus. J. Radio Electron. |
Volume | Issue | 10 | Pages | ||
Keywords | terahertz electromagnetic radiation; superconductors; detectors of terahertz range | ||||
Abstract | A problem of absorption of high-frequency electromagnetic field in dirty superconductor is treated within Keldysh technic. Expression for the source term in the kinetic equation for quasiparticle distribution function is derived. The result is significant for deriving a consistent microscopic theory of superconducting detectors for terahertz frequency range, perspective detectors on kinetic inductance of current-biased superconducting strip and on Josephson inductance of tunnel. | ||||
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Notes | 7 pages | Approved | no | ||
Call Number | Serial | 1117 | |||
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Author | Kahl, O.; Ferrari, S.; Kovalyuk, V.; Vetter, A.; Lewes-Malandrakis, G.; Nebel, C.; Korneev, A.; Goltsman, G.; Pernice, W. | ||||
Title | Spectrally multiplexed single-photon detection with hybrid superconducting nanophotonic circuits | Type | Journal Article | ||
Year | 2017 | Publication | Optica | Abbreviated Journal | Optica |
Volume | 4 | Issue | 5 | Pages | 557-562 |
Keywords | Waveguide integrated superconducting single-photon detectors; Nanophotonics and photonic crystals; Quantum detectors; Spectrometers and spectroscopic instrumentation | ||||
Abstract | The detection of individual photons by superconducting nanowire single-photon detectors is an inherently binary mechanism, revealing either their absence or presence while concealing their spectral information. For multicolor imaging techniques, such as single-photon spectroscopy, fluorescence resonance energy transfer microscopy, and fluorescence correlation spectroscopy, wavelength discrimination is essential and mandates spectral separation prior to detection. Here, we adopt an approach borrowed from quantum photonic integration to realize a compact and scalable waveguide-integrated single-photon spectrometer capable of parallel detection on multiple wavelength channels, with temporal resolution below 50 ps and dark count rates below 10 Hz at 80% of the devices' critical current. We demonstrate multidetector devices for telecommunication and visible wavelengths, and showcase their performance by imaging silicon vacancy color centers in diamond nanoclusters. The fully integrated hybrid superconducting nanophotonic circuits enable simultaneous spectroscopy and lifetime mapping for correlative imaging and provide the ingredients for quantum wavelength-division multiplexing on a chip. | ||||
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Call Number | RPLAB @ kovalyuk @ | Serial | 1119 | ||
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Author | Shurakov, A.; Prikhodko, A.; Mikhailov, D.; Belikov, I.; Kaurova, N.; Voronov, B.; Goltsman, G. | ||||
Title | Efficiency of a microwave reflectometry for readout of a THz multipixel Schottky diode direct detector | Type | Conference Article | ||
Year | 2020 | Publication | J. Phys.: Conf. Ser. | Abbreviated Journal | J. Phys.: Conf. Ser. |
Volume | 1695 | Issue | Pages | 012156 | |
Keywords | Shottky diode, THz, direct detector, multipixel camera | ||||
Abstract | In this paper we report on the results of investigation of efficiency of a microwave reflectometry for readout of a terahertz multipixel Schottky diode direct detector. Decent capabilities of the microwave reflectometry readout were earlier justified by us for a hot electron bolometric direct detector. In case of a planar Schottky diode, we observed increase of an optical noise equivalent power by a factor of 2 compared to that measured within a conventional readout scheme. For implementation of a multipixel camera, a microwave reflectometer is to be used to readout each row of the camera, and the row switching is to be maintained by a CMOS analog multiplexer. The diodes within a row have to be equipped with filters to distribute the probing microwave signal properly. The simultaneous use of analog multiplexing and microwave reflectometry enables to reduce the camera response time by a factor of its number of columns. | ||||
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ISSN | 1742-6588 | ISBN | Medium | ||
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Notes | Approved | no | |||
Call Number | Serial | 1153 | |||
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Author | Tretyakov, I.; Shurakov, A.; Perepelitsa, A.; Kaurova, N.; Svyatodukh, S.; Zilberley, T.; Ryabchun, S.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G. | ||||
Title | Silicon room temperature IR detectors coated with Ag2S quantum dots | Type | Conference Article | ||
Year | 2019 | Publication | Proc. IWQO | Abbreviated Journal | Proc. IWQO |
Volume | Issue | Pages | 369-371 | ||
Keywords | silicon detector, quantum dot, IR, surface states | ||||
Abstract | For decades silicon has been the chief technological semiconducting material of modern microelectronics. Application of silicon detectors in optoelectronic devices are limited to the visible and near infrared ranges, due to their transparency for radiation with a wavelength higher than 1.1 μm. The expansion Si absorption towards longer wave lengths is a considerable interest to optoelectronic applications. In this work we present an elegant and effective solution to this problem using Ag2S quantum dots, creating impurity states in Si to cause sub-band gap photon absorption. The sensitivity of room temperature zero-bias Si_Ag2S detectors, which we obtained is 1011 cmHzW . Given the variety of QDs parameters such as: material, dimensions, our results open a path towards the future study and development of Si detectors for technological applications. | ||||
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ISSN | ISBN | 978-5-89513-451-1 | Medium | ||
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Notes | Approved | no | |||
Call Number | Serial | 1154 | |||
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Author | Shurakov, Alexander; Maslennikov, Sergey; Tong, Cheuk-yu E.; Gol’tsman, Gregory | ||||
Title | Performance of an HEB direct detector utilizing a microwave reflection readout scheme | Type | Conference Article | ||
Year | 2015 | Publication | Proc. 26th Int. Symp. Space Terahertz Technol. | Abbreviated Journal | Proc. 26th Int. Symp. Space Terahertz Technol. |
Volume | Issue | Pages | 36 | ||
Keywords | HEB detector | ||||
Abstract | We report the results of our study on the performance of a hot electron bolometric (HEB) direct detector, operated by a microwave pump. The HEB devices used in this work were made from NbN thin film deposited on high resistivity silicon with an in-situ fabrication process. The experimental setup employed is similar to the one described in [1]. The detector chips were glued to a silicon lens clamped to a copper holder mounted on the cold plate of a liquid helium cryostat. Thermal link between the lens and the holder was maintained by a thin indium shim. The HEBs were operated at a bath temperature of about 4.4 K. Conventional phonon pump, commonly realized by raising the bath temperature of the detector, was substituted by a microwave one. In this case, a CW microwave signal is injected to the device through a directional coupler connected directly to the detector holder. The power incident on the HEB device was typically 1-2 μW, and the pump frequency was in the range of 0.5-1.5 GHz. The signal sources were 2 black bodies held at temperatures of 295 K and 77 K. A chopper wheel placed in front of the cryostat window switched the input to the detector between the 2 sources. A modulation frequency of several kilohertz was chosen in order to reduce the effects of the HEB’s flicker noise. A cold mesh filter was used to define the input bandwidth of the detector. The reflected microwave signal from the HEB device was fed into a low noise amplifier, the output of which is connected to a room temperature Schottky microwave power detector. This Schottky detector, in conjunction with a lock-in amplifier, demodulated the input signal modulation from the copper wheel. As the input load was switched, the impedance of the HEB device at the microwave pump frequency also changed in response to the incident signal power variation. Therefore the reflected microwave power follows the incident signal modulation. The derived responsivity from this detection system nicely correlates with the HEB impedance. In order to provide a quantitative description of the impedance variation of the HEB device and the impact of a microwave pump, we have numerically solved the heat balance equations written for the NbN bridge and its surrounding thermal heat sink [2]. Our model also accounts for the impact of the operating frequency of the detector because of non-uniform absorption of low-frequency photons across the NbN bridge [3]. In our measurements we varied the signal source wavelength from 2 mm down to near infrared range, and hence we indirectly performed the impedance measurements at frequencies below, around and far beyond the superconducting gap. Preliminary results show good agreement between the experiment and theoretical prediction. Further measurements are still in progress. [1] A. Shurakov et al., “A Microwave Reflection Readout Scheme for Hot Electron Bolometric Direct Detector”, to appear in IEEE Trans. THz Sci. Tech., 2015. [2] S. Maslennikov, “RF heating efficiency of the terahertz superconducting hot-electron bolometer”, http://arxiv.org/pdf/1404.5276v5.pdf, 2014. [3] W. Miao et al., “Non-uniform absorption of terahertz radiation on superconducting hot electron bolometer microbridges”, Appl. Phys. Let., 104, 052605, 2014. | ||||
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Notes | Approved | no | |||
Call Number | Serial | 1158 | |||
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Author | Shangina, E. L.; Smirnov, K. V.; Morozov, D. V.; Kovalyuk, V. V.; Gol’tsman, G. N.; Verevkin, A. A.; Toropov, A. I. | ||||
Title | Concentration dependence of the intermediate frequency bandwidth of submillimeter heterodyne AlGaAs/GaAs nanostructures | Type | Journal Article | ||
Year | 2010 | Publication | Bull. Russ. Acad. Sci. Phys. | Abbreviated Journal | Bull. Russ. Acad. Sci. Phys. |
Volume | 74 | Issue | 1 | Pages | 100-102 |
Keywords | 2DEG AlGaAs/GaAs heterostructures, THz heterodyne detectors, IF bandwidth | ||||
Abstract | The concentration dependence of the intermediate frequency bandwidth of heterodyne AlGaAs/GaAs detectors with 2D electron gas is measured using submillimeter spectroscopy with high time resolution at T= 4.2 K. The intermediate frequency bandwidth f3dBfalls from 245 to 145 MHz with increasing concentration of 2D electrons n s = (1.6-6.6) × 10[su11] cm-2. The dependence f3dB ≈ n s – 0.04±is observed in the studied concentration range; this dependence is determined by electron scattering by the deformation potential of acoustic phonons and piezoelectric scattering. | ||||
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ISSN | 1062-8738 | ISBN | Medium | ||
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Notes | Approved | no | |||
Call Number | Serial | 1217 | |||
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Author | Kahl, O.; Ferrari, S.; Kovalyuk, V.; Vetter, A.; Lewes-Malandrakis, G.; Nebel, C.; Korneev, A.; Goltsman, G.; Pernice, W. | ||||
Title | Spectrally multiplexed single-photon detection with hybrid superconducting nanophotonic circuits: supplementary material | Type | Miscellaneous | ||
Year | 2017 | Publication | Optica | Abbreviated Journal | |
Volume | Issue | Pages | 1-9 | ||
Keywords | Quantum detectors; Spectrometers and spectroscopic instrumentation; Nanophotonics and photonic crystals; Fluorescence correlation spectroscopy; Fluorescence resonance energy transfer; Fluorescence spectroscopy; Imaging techniques; Optical components; Quantum key distribution | ||||
Abstract | This document provides supplementary information to “Spectrally multiplexed single-photon detection with hybrid superconducting nanophotonic circuits", DOI:10.1364/optica.4.000557. Here we detail the on-chip spectrometer design, its characterization and the experimental setup we used. In addition, we present a detailed report concerning the characterization of the superconducting nanowire single photon detectors. In the final sections, we describe sample preparation and characterization of the nanodiamonds containing silicon vacancy color centers. | ||||
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Publisher | Osa | Place of Publication | Editor | ||
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Call Number | Kahl:17 | Serial | 1218 | ||
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Author | Korneev, A.; Minaeva, O.; Divochiy, A.; Antipov, A.; Kaurova, N.; Seleznev, V.; Voronov, B.; Gol’tsman, G.; Pan, D.; Kitaygorsky, J.; Slysz, W.; Sobolewski, R. | ||||
Title | Ultrafast and high quantum efficiency large-area superconducting single-photon detectors | Type | Conference Article | ||
Year | 2007 | Publication | Proc. SPIE | Abbreviated Journal | Proc. SPIE |
Volume | 6583 | Issue | Pages | 65830I (1 to 9) | |
Keywords | SSPD, SNSPD, superconducting NbN films, infrared single-photon detectors | ||||
Abstract | We present our latest generation of superconducting single-photon detectors (SSPDs) patterned from 4-nm-thick NbN films, as meander-shaped 0.5-mm-long and 100-nm-wide stripes. The SSPDs exhibit excellent performance parameters in the visible-to-near-infrared radiation wavelengths: quantum efficiency (QE) of our best devices approaches a saturation level of 30% even at 4.2 K (limited by the NbN film optical absorption) and dark counts as low as 2x10-4 Hz. The presented SSPDs were designed to maintain the QE of large-active-area devices, but, unless our earlier SSPDs, hampered by a significant kinetic inductance and a nanosecond response time, they are characterized by a low inductance and GHz counting rates. We have designed, simulated, and tested the structures consisting of several, connected in parallel, meander sections, each having a resistor connected in series. Such new, multi-element geometry led to a significant decrease of the device kinetic inductance without the decrease of its active area and QE. The presented improvement in the SSPD performance makes our detectors most attractive for high-speed quantum communications and quantum cryptography applications. | ||||
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Publisher | Spie | Place of Publication | Editor | Dusek, M.; Hillery, M.S.; Schleich, W.P.; Prochazka, I.; Migdall, A.L.; Pauchard, A. | |
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Notes | Approved | no | |||
Call Number | Serial | 1249 | |||
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