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| Author |
Stevens, Martin J.; Baek, Burm; Dauler, Eric A.; Kerman, Andrew J.; Molnar, Richard J.; Hamilton, Scott A.; Berggren, Karl K.; Mirin, Richard P.; Nam, Sae Woo |
| Title |
High-order temporal coherences of
chaotic and laser light |
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Journal Article |
| Year |
2010 |
Publication |
Optics Express |
Abbreviated Journal |
Opt. Express |
| Volume |
18 |
Issue |
2 |
Pages |
1430-1437 |
| Keywords |
SNSPD |
| Abstract |
We demonstrate a new approach to measuring high-order temporal coherences that uses a four-element superconducting nanowire single-photon detector. The four independent, interleaved single-photon-sensitive elements parse a single spatial mode of an optical beam over dimensions smaller than the minimum diffraction-limited spot size. Integrating this device with four-channel time-tagging electronics to generate multi-start, multi-stop histograms enables measurement of temporal coherences up to fourth order for a continuous range of all associated time delays. We observe high-order photon bunching from a chaotic, pseudo-thermal light source, measuring maximum third- and fourth-order coherence values of 5.87 ± 0.17 and 23.1 ± 1.8, respectively, in agreement with the theoretically predicted values of 3! = 6 and 4! = 24. Laser light, by contrast, is confirmed to have coherence values of approximately 1 for second, third and fourth orders at all time delays. |
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685 |
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Zhong, Tian; Hu, Xiaolong; Wong, Franco N. C.; Berggren, Karl K.; Roberts, Tony D.; Battle, Philip |
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High-quality fiber-optic polarization entanglement distribution at 1.3 μm telecom wavelength |
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Journal Article |
| Year |
2010 |
Publication |
Optics Letters |
Abbreviated Journal |
Opt. Lett. |
| Volume |
35 |
Issue |
9 |
Pages |
1392-1394 |
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We demonstrate high-quality distribution of 1.3 μm polarization-entangled photons generated from a fiber-coupled periodically poled KTiOPO4 waveguide over 200 m fiber-optic cables. Time-multiplexed measurements with a 19% efficient superconducting nanowire single-photon detector at the remote location show a detected flux of 5.8 pairs / s at a pump power of 25 μW and an average two-photon quantum-interference visibility of 97.7% without subtraction of accidentals. |
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Bulaevskii, L. N.; Graf, M. J.; Batista, C. D.; Kogan, V. G. |
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Vortex-induced dissipation in narrow current-biased thin-film superconducting strips |
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Journal Article |
| Year |
2011 |
Publication |
Phys. Rev. B |
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Phys. Rev. B |
| Volume |
83 |
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14 |
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9 |
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A vortex crossing a thin-film superconducting strip from one edge to the other, perpendicular to the bias current, is the dominant mechanism of dissipation for films of thickness d on the order of the coherence length ξ and of width w much narrower than the Pearl length Λâ‰<ab>wâ‰<ab>ξ. At high bias currents I*<I<Ic the heat released by the crossing of a single vortex suffices to create a belt-like normal-state region across the strip, resulting in a detectable voltage pulse. Here Ic is the critical current at which the energy barrier vanishes for a single vortex crossing. The belt forms along the vortex path and causes a transition of the entire strip into the normal state. We estimate I* to be roughly Ic/3. Furthermore, we argue that such “hot†vortex crossings are the origin of dark counts in photon detectors, which operate in the regime of metastable superconductivity at currents between I* and Ic. We estimate the rate of vortex crossings and compare it with recent experimental data for dark counts. For currents below I*, that is, in the stable superconducting but resistive regime, we estimate the amplitude and duration of voltage pulses induced by a single vortex crossing. |
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688 |
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Venkatasubramanian, Chandrasekaran; Cabarcos, Orlando M.; Allara, David L. Horn, Mark W.; Ashok, S. |
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Correlation of temperature response and structure of annealed VOx thin films for IR detector applications |
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Journal Article |
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2009 |
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J. Vac. Sci. Technol. A |
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27 |
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4 |
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6 |
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Annealing |
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The effects of thermal annealing on vanadium oxide (VOx) thin films prepared by pulsed-dc magnetron sputtering were studied to explore methods of improving the efficiency of uncooled IR imaging microbolometers, particularly with respect to maximizing the temperature coefficients of resistance (TCR) (typically ~2%) while minimizing resistivity values (typically 0.05–5 Ω cm). Since high TCR values are usually associated with high resistivities, the experiments were designed to find processing conditions that provide an optimal balance in these properties and to then determine the underlying structural correlations which would enable rational design of thin films for this specific application. VOx films of different compositions were deposited by pulsed-dc reactive sputtering from a vanadium target at different oxygen flow rates. The deposited films were further modified by annealing in inert (nitrogen) and oxidizing (oxygen) atmospheres at four different temperatures for 10, 20, or 30 min at a time. The resistivities of the as-deposited films ranged from 0.2 to 13 Ω cm and the TCR values varied from –1.6% to –2.2%. Depending on the exact annealing conditions, several orders of magnitude change in resistance and significant variations in TCR were observed. Optimal results were obtained with annealing in a nitrogen atmosphere. Structural characterization by x-ray diffraction, field emission scanning electron microscopy, atomic force microscopy, and Raman spectroscopy indicated changes in the film crystallinity and phase for annealing conditions over 300 °C with the onset and extent of the changes dependent on which annealing atmosphere was used. |
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690 |
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Mannino, Giovanni; Spinella, Corrado; Ruggeri, Rosa; La Magna, Antonino; Fisicaro, Giuseppe; Fazio, Enza; Neri, Fortunato; Privitera, Vittorio |
| Title |
Crystallization of implanted amorphous silicon during millisecond annealing by infrared laser irradiation |
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Journal Article |
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2010 |
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Applied Physics Letters |
Abbreviated Journal |
Appl. Phys. Lett. |
| Volume |
97 |
Issue |
2 |
Pages |
3 |
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Annealing |
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We investigated the homogenous nucleation of crystalline grains in amorphous Si during transient temperature pulse of few milliseconds IR laser irradiation. The crystallized volume fraction is ~80%. Significant crystallization occurs in nonsteady regime because of the rapid temperature variation (106 °C/s). Our model combines the time evolution of the crystal grain population with the consumption of the amorphous volume due to the growth of grains. Thanks to the experimental approach based on a laser source to heat α-Si and the theoretical model we extended the description of the spontaneous crystallization up to 1323 K or 250 K above the temperature investigated by conventional annealing. |
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691 |
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