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Author Goltsman, G.; Naumov, A. V.; Gladush, M. G.; Karimullin, K. R. url  doi
openurl 
  Title Quantum photonic integrated circuits with waveguide integrated superconducting nanowire single-photon detectors Type Conference Article
  Year 2018 Publication (down) EPJ Web Conf. Abbreviated Journal EPJ Web Conf.  
  Volume 190 Issue Pages 02004 (1 to 2)  
  Keywords waveguide SSPD, SNSPD  
  Abstract We show the design, a history of development as well as the most successful and promising approaches for QPICs realization based on hybrid nanophotonic-superconducting devices, where one of the key elements of such a circuit is a waveguide integrated superconducting single-photon detector (WSSPD). The potential of integration with fluorescent molecules is discussed also.  
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  Corporate Author Thesis  
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  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 2100-014X ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1320  
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Author Elezov, M. S.; Ozhegov, R. V.; Goltsman, G. N.; Makarov, V.; Vinogradov, E. A.; Naumov, A. V.; Gladush, M. G.; Karimullin, K. R. url  doi
openurl 
  Title Development of the experimental setup for investigation of latching of superconducting single-photon detector caused by blinding attack on the quantum key distribution system Type Conference Article
  Year 2017 Publication (down) EPJ Web Conf. Abbreviated Journal EPJ Web Conf.  
  Volume 132 Issue Pages 01004 (1 to 2)  
  Keywords QKD, SSPD, SNSPD  
  Abstract Recently bright-light control of the SSPD has been demonstrated. This attack employed a “backdoor” in the detector biasing scheme. Under bright-light illumination, SSPD becomes resistive and remains “latched” in the resistive state even when the light is switched off. While the SSPD is latched, Eve can simulate SSPD single-photon response by sending strong light pulses, thus deceiving Bob. We developed the experimental setup for investigation of a dependence on latching threshold of SSPD on optical pulse length and peak power. By knowing latching threshold it is possible to understand essential requirements for development countermeasures against blinding attack on quantum key distribution system with SSPDs.  
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  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 2100-014X ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1327  
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Author Elezov, M. S.; Ozhegov, R. V.; Kurochkin, Y. V.; Goltsman, G. N.; Makarov, V. S.; Samartsev, V. V.; Vinogradov, E. A.; Naumov, A. V.; Karimullin, K. R. url  doi
openurl 
  Title Countermeasures against blinding attack on superconducting nanowire detectors for QKD Type Conference Article
  Year 2015 Publication (down) EPJ Web Conf. Abbreviated Journal EPJ Web Conf.  
  Volume 103 Issue Pages 10002 (1 to 2)  
  Keywords SSPD, SNSPD, QKD  
  Abstract Nowadays, the superconducting single-photon detectors (SSPDs) are used in Quantum Key Distribution (QKD) instead of single-photon avalanche photodiodes. Recently bright-light control of the SSPD has been demonstrated. This attack employed a “backdoor” in the detector biasing technique. We developed the autoreset system which returns the SSPD to superconducting state when it is latched. We investigate latched state of the SSPD and define limit conditions for effective blinding attack. Peculiarity of the blinding attack is a long nonsingle photon response of the SSPD. It is much longer than usual single photon response. Besides, we need follow up response duration of the SSPD. These countermeasures allow us to prevent blind attack on SSPDs for Quantum Key Distribution.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 2100-014X ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1352  
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Author Słysz, W.; Węgrzecki, M.; Bar, J.; Grabiec, P.; Gol'tsman, G. N.; Verevkin, A.; Sobolewski, R. url  openurl
  Title NbN superconducting single-photon detector coupled with a communication fiber Type Journal Article
  Year 2005 Publication (down) Elektronika : konstrukcje, technologie, zastosowania Abbreviated Journal  
  Volume 46 Issue 6 Pages 51-52  
  Keywords NbN SSPD, SNSPD  
  Abstract We present novel superconducting single-photon detectors (SSPDs), ba­sed on ultrathin NbN films, designed for fiber-based quantum communica­tions (lambda = 1.3 žm and 1.55 žm). For fiber-based operation, our SSPDs contain a special micromechanical construction integrated with the NbN structure, which enables efficient and mechanically very stabile fiber coupling. The detectors combine GHz counting rate, high quantum efficiency and very low level of dark counts. At 1.3 – 1.55 žm wavelength range our detector exhibits a quantum efficiency up to 10%.  
  Address  
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  Language Polish Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
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  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1481  
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Author Zhang, J.; Boiadjieva, N.; Chulkova, G.; Deslandes, H.; Gol'tsman, G. N.; Korneev, A.; Kouminov, P.; Leibowitz, M.; Lo, W.; Malinsky, R.; Okunev, O.; Pearlman, A.; Slysz, W.; Smirnov, K.; Tsao, C.; Verevkin, A.; Voronov, B.; Wilsher, K.; Sobolewski, R. url  doi
openurl 
  Title Noninvasive CMOS circuit testing with NbN superconducting single-photon detectors Type Journal Article
  Year 2003 Publication (down) Electron. Lett. Abbreviated Journal Electron. Lett.  
  Volume 39 Issue 14 Pages 1086-1088  
  Keywords NbN SSPD, SNSPD, applications  
  Abstract The 3.5 nm thick-film, meander-structured NbN superconducting single-photon detectors have been implemented in the CMOS circuit-testing system based on the detection of near-infrared photon emission from switching transistors and have significantly improved the performance of the system. Photon emissions from both p- and n-MOS transistors have been observed.  
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  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0013-5194 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1512  
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