Hübers, H. - W., Semenov, A., Richter, H., Birk, M., Krocka, M., Mair, U., et al. (2002). Terahertz Heterodyn Receiver with a hot-electron bolometer mixer. In U. Wolf, J. Farhoomand, & C. R. McCreight (Eds.), Far-IR, Sub-mm & MM Detector Technology Workshop (pp. 3–24). NASA CP. NASA.
Abstract: During the past decade major advances have been made regarding low noise mixers for terahertz (THz) heterodyne receivers. State of the art hot-electron-bolometer (HEB) mixers have noise temperatures close to the quantum limit and require less than a µW power from the local oscillator (LO). The technology is now at a point where the performance of a practical receiver employing such mixer, rather than the figures of merit of the mixer itself, are of major concern. We have incorporated a phonon-cooled NbN HEB mixer in a 2.5 THz heterodyne receiver and investigated the performance of the receiver. This yields important information for the development of heterodyne receivers such as GREAT (German receiver for astronomy at THz frequencies aboard SOFIA) [1] and TELIS (Terahertz limb sounder), a balloon borne heterodyne receiver for atmospheric research [2]. Both are currently under development at DLR.
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Florya, I. N., Korneeva, Y. P., Sidorova, M. V., Golikov, A. D., Gaiduchenko, I. A., Fedorov, G. E., et al. (2015). Energy relaxtation and hot spot formation in superconducting single photon detectors SSPDs. In EPJ Web of Conferences (Vol. 103, 10004 (1 to 2)).
Abstract: We have studied the mechanism of energy relaxation and resistive state formation after absorption of a single photon for different wavelengths and materials of single photon detectors. Our results are in good agreement with the hot spot model.
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Fedorov, G. E., Gaiduchenko, I. A., Golikov, A. D., Rybin, M. G., Obraztsova, E. D., Voronov, B. M., et al. (2015). Response of graphene based gated nanodevices exposed to THz radiation. In EPJ Web of Conferences (Vol. 103, 10003 (1 to 2)).
Abstract: In this work we report on the response of asymmetric graphene based devices to subterahertz and terahertz radiation. Our devices are made in a configuration of a field-effect transistor with conduction channel between the source and drain electrodes formed with a CVD-grown graphene. The radiation is coupled through a spiral antenna to source and top gate electrodes. Room temperature responsivity of our devices is close to the values that are attractive for commercial applications. Further optimization of the device configuration may result in appearance of novel terahertz radiation detectors.
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Zhang, J., Boiadjieva, N., Chulkova, G., Deslandes, H., Gol'tsman, G. N., Korneev, A., et al. (2003). Noninvasive CMOS circuit testing with NbN superconducting single-photon detectors. Electron. Lett., 39(14), 1086–1088.
Abstract: The 3.5 nm thick-film, meander-structured NbN superconducting single-photon detectors have been implemented in the CMOS circuit-testing system based on the detection of near-infrared photon emission from switching transistors and have significantly improved the performance of the system. Photon emissions from both p- and n-MOS transistors have been observed.
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Dauler, E. A., Kerman, A. J., Robinson, B. S., Yang, J. K. W., Voronov, B. M., Gol’tsman, G. N., et al. (2006). Achieving high counting rates in superconducting nanowire single-photon detectors. In CLEO/QELS (JTuD3 (1 to 2)). Optical Society of America.
Abstract: Kinetic inductance is determined to be the primary limitation to the counting rate of superconducting nanowire single-photon counters. Approaches for overcoming this limitation will be discussed.
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