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Author Slysz, W.; Wegrzecki, M.; Bar, J.; Grabiec, P.; Gol'tsman, G. N.; Verevkin, M.; Sobolewski, R.
Title NbN superconducting single-photon detectors coupled with a communication fiber Type Miscellaneous
Year 2004 Publication INIS Abbreviated Journal INIS
Volume 37 Issue 2 Pages 1-2
Keywords NbN SSPD, SNSPD
Abstract
Address Stare Jablonki, Poland
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Area Expedition Conference 8-th Electron Technology Conference ELTE
Notes Approved no
Call Number Serial 1486
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Author Verevkin, A.; Pearlman, A.; Slysz, W.; Zhang, J.; Currie, M.; Korneev, A.; Chulkova, G.; Okunev, O.; Kouminov, P.; Smirnov, K.; Voronov, B.; Gol'tsman, G. N.; Sobolewski, R.
Title Ultrafast superconducting single-photon detectors for near-infrared-wavelength quantum communications Type Journal Article
Year 2004 Publication J. Modern Opt. Abbreviated Journal J. Modern Opt.
Volume 51 Issue 9-10 Pages 1447-1458
Keywords NbN SSPD, SNSPD
Abstract The paper reports progress on the design and development of niobium-nitride, superconducting single-photon detectors (SSPDs) for ultrafast counting of near-infrared photons for secure quantum communications. The SSPDs operate in the quantum detection mode, based on photon-induced hotspot formation and subsequent appearance of a transient resistive barrier across an ultrathin and submicron-width superconducting stripe. The devices are fabricated from 3.5 nm thick NbN films and kept at cryogenic (liquid helium) temperatures inside a cryostat. The detector experimental quantum efficiency in the photon-counting mode reaches above 20% in the visible radiation range and up to 10% at the 1.3–1.55 μn infrared range. The dark counts are below 0.01 per second. The measured real-time counting rate is above 2 GHz and is limited by readout electronics (the intrinsic response time is below 30 ps). The SSPD jitter is below 18 ps, and the best-measured value of the noise-equivalent power (NEP) is 2 × 10−18 W/Hz1/2. at 1.3 μm. In terms of photon-counting efficiency and speed, these NbN SSPDs significantly outperform semiconductor avalanche photodiodes and photomultipliers.
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Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0950-0340 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1488
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Author Goltsman, G.; Korneev, A.; Izbenko, V.; Smirnov, K.; Kouminov, P.; Voronov, B.; Kaurova, N.; Verevkin, A.; Zhang, J.; Pearlman, A.; Slysz, W.; Sobolewski, R.
Title Nano-structured superconducting single-photon detectors Type Journal Article
Year 2004 Publication Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment Abbreviated Journal
Volume 520 Issue 1-3 Pages 527-529
Keywords NbN SSPD, SNSPD
Abstract NbN detectors, formed into meander-type, 10×10-μm2 area structures, based on ultrathin (down to 3.5-nm thickness) and nanometer-width (down to below 100 nm) NbN films are capable of efficiently detecting and counting single photons from the ultraviolet to near-infrared optical wavelength range. Our best devices exhibit QE >15% in the visible range and ∼10% in the 1.3–1.5-μm infrared telecommunication window. The noise equivalent power (NEP) ranges from ∼10−17 W/Hz1/2 at 1.5 μm radiation to ∼10−19 W/Hz1/2 at 0.56 μm, and the dark counts are over two orders of magnitude lower than in any semiconducting competitors. The intrinsic response time is estimated to be <30 ps. Such ultrafast detector response enables a very high, GHz-rate real-time counting of single photons. Already established applications of NbN photon counters are non-invasive testing and debugging of VLSI Si CMOS circuits and quantum communications.
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Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0168-9002 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1495
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Author Rubtsova, I.; Korneev, A.; Matvienko, V.; Chulkova, G.; Milostnaya, I.; Goltsman, G.; Pearlman, A.; Slysz, W.; Verevkin, A.; Sobolewski, R.
Title Spectral sensitivity, quantum efficiency, and noise equivalent power of NbN superconducting single-photon detectors in the IR range Type Conference Article
Year 2004 Publication Proc. 29th IRMMW / 12th THz Abbreviated Journal Proc. 29th IRMMW / 12th THz
Volume Issue Pages 461-462
Keywords NbN SSPD, SNSPD
Abstract We have developed nanostructured NbN superconducting single-photon detectors capable of GHz-rate photon counting in the 0.4 to 5 /spl mu/m wavelength range. Quantum efficiency of 30%, dark count rate 3/spl times/10/sup -4/ s/sup -1/, and NEP=10/sup -20/ W/Hz/sup -1/2/ have been measured at the 1.3-/spl mu/m wavelength for the device operating at 2.0 K.
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Publisher (up) Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
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Area Expedition Conference
Notes Approved no
Call Number Serial 1507
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Author Zhang, J.; Pearlman, A.; Slysz, W.; Verevkin, A.; Sobolewski, R.; Wilsher, K.; Lo, W.; Okunev, O.; Korneev, A.; Kouminov, P.; Chulkova, G.; Gol’tsman, G. N.
Title A superconducting single-photon detector for CMOS IC probing Type Conference Article
Year 2003 Publication Proc. 16-th LEOS Abbreviated Journal Proc. 16-th LEOS
Volume 2 Issue Pages 602-603
Keywords NbN SSPD, SNSPD
Abstract In this paper, a novel, time-resolved, NbN-based, superconducting single-photon detector (SSPD) has been developed for probing CMOS integrated circuits (ICs) using photon emission timing analysis (PETA).
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Area Expedition Conference The 16th Annual Meeting of the IEEE Lasers and Electro-Optics Society, 2003. LEOS 2003.
Notes Approved no
Call Number Serial 1510
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Author Korneev, A.; Lipatov, A.; Okunev, O.; Chulkova, G.; Smirnov, K.; Gol’tsman, G.; Zhang, J.; Slysz, W.; Verevkin, A.; Sobolewski, R.
Title GHz counting rate NbN single-photon detector for IR diagnostics of VLSI CMOS circuits Type Journal Article
Year 2003 Publication Microelectronic Engineering Abbreviated Journal Microelectronic Engineering
Volume 69 Issue 2-4 Pages 274-278
Keywords NbN SSPD, SNSPD, applications
Abstract We present a new, simple to manufacture superconducting single-photon detector operational in the range from ultraviolet to mid-infrared radiation wavelengths. The detector combines GHz counting rate, high quantum efficiency and very low level of dark (false) counts. At 1.3–1.5 μm wavelength range our detector exhibits a quantum efficiency of 5–10%. The detector photoresponse voltage pulse duration was measured to be about 150 ps with jitter of 35 ps and both of them were limited mostly by our measurement equipment. In terms of quantum efficiency, dark counts level, speed of operation the detector surpasses all semiconductor counterparts and was successfully applied for CMOS integrated circuits diagnostics.
Address
Corporate Author Thesis
Publisher (up) Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0167-9317 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1511
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Author Zhang, J.; Boiadjieva, N.; Chulkova, G.; Deslandes, H.; Gol'tsman, G. N.; Korneev, A.; Kouminov, P.; Leibowitz, M.; Lo, W.; Malinsky, R.; Okunev, O.; Pearlman, A.; Slysz, W.; Smirnov, K.; Tsao, C.; Verevkin, A.; Voronov, B.; Wilsher, K.; Sobolewski, R.
Title Noninvasive CMOS circuit testing with NbN superconducting single-photon detectors Type Journal Article
Year 2003 Publication Electron. Lett. Abbreviated Journal Electron. Lett.
Volume 39 Issue 14 Pages 1086-1088
Keywords NbN SSPD, SNSPD, applications
Abstract The 3.5 nm thick-film, meander-structured NbN superconducting single-photon detectors have been implemented in the CMOS circuit-testing system based on the detection of near-infrared photon emission from switching transistors and have significantly improved the performance of the system. Photon emissions from both p- and n-MOS transistors have been observed.
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Publisher (up) Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0013-5194 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1512
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Author Gol’tsman, G. N.; Smirnov, K.; Kouminov, P.; Voronov, B.; Kaurova, N.; Drakinsky, V.; Zhang, J.; Verevkin, A.; Sobolewski, R.
Title Fabrication of nanostructured superconducting single-photon detectors Type Journal Article
Year 2003 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.
Volume 13 Issue 2 Pages 192-195
Keywords NbN SSPD, SNSPD
Abstract Fabrication of NbN superconducting single-photon detectors, based on the hotspot effect is presented. The hotspot formation arises in an ultrathin and submicrometer-width superconductor stripe and, together with the supercurrent redistribution, leads to the resistive detector response upon absorption of a photon. The detector has a meander structure to maximally increase its active area and reach the highest detection efficiency. Main processing steps, leading to efficient devices, sensitive in 0.4-5 /spl mu/m wavelength range, are presented. The impact of various processing steps on the performance and operational parameters of our detectors is discussed.
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Corporate Author Thesis
Publisher (up) Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1558-2515 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1515
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Author Zhang, J.; Słysz, W.; Pearlman, A.; Verevkin, A.; Sobolewski, R.; Okunev, O.; Chulkova, G.; Gol’tsman, G. N.
Title Time delay of resistive-state formation in superconducting stripes excited by single optical photons Type Journal Article
Year 2003 Publication Phys. Rev. B Abbreviated Journal Phys. Rev. B
Volume 67 Issue 13 Pages 132508 (1 to 4)
Keywords NbN SSPD, SNSPD
Abstract We have observed a 65(±5)-ps time delay in the onset of a resistive-state formation in 10-nm-thick, 130-nm-wide NbN superconducting stripes exposed to single photons. The delay in the photoresponse decreased to zero when the stripe was irradiated by multi-photon (classical) optical pulses. Our NbN structures were kept at 4.2 K, well below the material’s critical temperature, and were illuminated by 100-fs-wide optical pulses. The time-delay phenomenon has been explained within the framework of a model based on photon-induced generation of a hotspot in the superconducting stripe and subsequent, supercurrent-assisted, resistive-state formation across the entire stripe cross section. The measured time delays in both the single-photon and two-photon detection regimes agree well with theoretical predictions of the resistive-state dynamics in one-dimensional superconducting stripes.
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Publisher (up) Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0163-1829 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1519
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Author Okunev, O.; Smirnov, K.; Chulkova, G.; Korneev, A.; Lipatov, A.; Gol'tsman, G.; Zhang, J.; Slysz, W.; Verevkin, A.; Sobolewski, Roman
Title Ultrafast NBN hot-electron single-photon detectors for electronic applications Type Abstract
Year 2002 Publication Abstracts 8-th IUMRS-ICEM Abbreviated Journal Abstracts 8-th IUMRS-ICEM
Volume Issue Pages
Keywords NbN SSPD, SNSPD
Abstract We present a new, simple to manufacture, single-photon detector (SPD), which can work from ultraviolet to near-infrared wavelengths of optical radiation and combines high speed of operation, high quantum efficiency (QE), and very low dark counts. The devices are superconducting and operate at temperature below 5 K. The physics of operation of our SPD is based on formation of a photon-induced resistive hotspot and subsequent appearance of a transient resistive barrier across an ultrathin and submicron-wide superconductor.
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Area Expedition Conference 8th IUMRS International Conference on Electronic Materials
Notes Approved no
Call Number Serial 1532
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