| Records |
| Author |
Chulcova, G. M.; Ptitsina, N. G.; Gershenzon, E. M.; Gershenzon, M. E.; Sergeev, A. V. |
| Title |
Effect of the interference between electron-phonon and electron-impurity (boundary) scattering on resistivity Nb, Al, Be films |
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Conference Article |
| Year |
1996 |
Publication |
Czech J. Phys. |
Abbreviated Journal |
Czech J. Phys. |
| Volume |
46 |
Issue |
S5 |
Pages |
2489-2490 |
| Keywords |
Al, Be, Nb films |
| Abstract |
The temperature dependence of the resistivity of thin Nb, Al, Be films has been studied over a wide temperature range 4-300 K. We have found that the temperature-dependent correction to the residual resistivity is well described by the sum of the Bloch-Grüneisen term and the term originating from the interference between electron-phonon and electron-impurity scattering. Study of the transport interference phenomena allows to determine electron-phonon coupling in disordered metals. The interference term is proportional to T2 and also to the residual resistivity and dominates over the Bloch-Grüneisen term at low temperatures (T<40 K). |
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0011-4626 |
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1767 |
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| Author |
Goltsman, Gregory N. |
| Title |
Development and applications of terahertz hot electron bolometers |
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Abstract |
| Year |
2021 |
Publication |
1st Moscow Int. Conf. on Submillimeter and Millimeter Astronomy: Objectives and Instruments |
Abbreviated Journal |
1st Moscow Int. Conf. on Submillimeter and Millimeter Astronomy: Objectives and Instruments |
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The development of techniques and technologies for the deposition of ultrathin superconducting films, the creation of superconducting structures on a nanometer scale is the basis of significant progress in the field of superconducting receiving systems. Ultrathin NbN films are the basis for a wide range of record-breaking hot electron devices: direct and heterodyne terahertz detectors. Terahertz receivers are especially in demand in high-resolution spectroscopy for astronomical, atmospheric, and medical research. HEB receivers are widely used in terahertz radio astronomy. For example, the Dutch SRON Institute is preparing a project for the GUSTO hot air balloon telescope with a HEB mixer array at 1.4 THz and 1.9 THz. A 5-meter Chinese terahertz telescope DATE5 with HEB mixers at 1.4 THz is installed at the South Pole. The Stratospheric Observatory (SOFIA) uses HEB mixer matrices in the GREAT instrument operating in the 1.2 – 4.7 THz range. It is planned to implement the international project Origins Space Telescope (OST) in the far infrared region based on HEB receivers. The Japanese project Smiles-2 will allow measurements at 1.8 THz in the upper layers of the stratosphere and mesosphere. The development of the Millimetron space observatory continues in Russia. |
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First Moscow International Conference on Submillimeter and Millimeter Astronomy: Objectives and Instruments, Astro Space Center, Moscow, 12-16 April 2021, id. 2 |
| Notes |
Downloaded from https://millimetron.ru/conference_2021/Goltsman.pdf; Author: Sergey; Last modification: 2021-04-14 |
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1771 |
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Dryazgov, M.; Semenov, A.; Manova, N.; Korneeva, Y.; Korneev, A. |
| Title |
Modelling of normal domain evolution after single-photon absorption of a superconducting strip of micron width |
Type |
Conference Article |
| Year |
2020 |
Publication |
J. Phys.: Conf. Ser. |
Abbreviated Journal |
J. Phys.: Conf. Ser. |
| Volume |
1695 |
Issue |
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Pages |
012195 (1 to 4) |
| Keywords |
SSPD modelling, SNSPD |
| Abstract |
The present paper describes a modelling of normal domain evolution in superconducting strip of micron width using solving differential equations describing the temperature and current changes. The solving results are compared with experimental data. This comparison demonstrates the high accuracy of the model. In future, it is possible to employ this model for improvement of single photon detector based on micron-scale superconducting strips. |
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1742-6588 |
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1785 |
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Manova, N. N.; Simonov, N. O.; Korneeva, Y. P.; Korneev, A. A. |
| Title |
Developing of NbN films for superconducting microstrip single-photon detector |
Type |
Conference Article |
| Year |
2020 |
Publication |
J. Phys.: Conf. Ser. |
Abbreviated Journal |
J. Phys.: Conf. Ser. |
| Volume |
1695 |
Issue |
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Pages |
012116 (1 to 5) |
| Keywords |
NbN SSPD, SNSPD, NbN films |
| Abstract |
We optimized NbN films on a Si substrate with a buffer SiO2 layer to produce superconducting microstrip single-photon detectors with saturated dependence of quantum efficiency (QE) versus normalized bias current. We varied thickness of films and observed the maximum QE saturation for device based on the thinner film with the lowest ratio RS300/RS20. |
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1742-6588 |
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no |
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1786 |
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Polyakova, M. I.; Korneev, A. A.; Semenov, A. V. |
| Title |
Comparison single- and double- spot detection efficiencies of SSPD based to MoSi and NbN films |
Type |
Conference Article |
| Year |
2020 |
Publication |
J. Phys.: Conf. Ser. |
Abbreviated Journal |
J. Phys.: Conf. Ser. |
| Volume |
1695 |
Issue |
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Pages |
012146 (1 to 3) |
| Keywords |
NbN SSPD, SNSPD, MoSi |
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In this work, we present results of quantum detector tomography of superconducting single photon detector (SSPD) based on MoSi film, and compare them with previously reported data on NbN. We find that for both materials hot spot interaction length coincides with the strip width, and the dependence of single and double-spot detection efficiencies on bias current are compatible with sufficiently large hot-spot size, approaching the strip width. |
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1742-6588 |
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no |
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1787 |
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| Author |
Elmanov, Ilia; Elmanova, Anna; Kovalyuk, Vadim; An, Pavel; Goltsman, Gregory |
| Title |
Integrated contra-directional coupler for NV-centers photon filtering |
Type |
Conference Article |
| Year |
2020 |
Publication |
Proc. 32-nd EMSS |
Abbreviated Journal |
Proc. 32-nd EMSS |
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Pages |
354-360 |
| Keywords |
NV-centers, nanodiamonds, quantum photonic integrated circuits, contra-direction coupler, Bragg gratings |
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We modelled an integrated optical contra-directional coupler on silicon nitride platform. Performance of the filter was studied depending on different parameters, including the grating period and the height of teeth of the Bragg grating near 637 nm operation wavelength. The obtained results can be used for a design and fabrication of quantum photonic integrated circuits with on-chip single-photon NV-centers in nanodiamonds. |
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2724-0029 |
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978-88-85741-44-7 |
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32nd European Modeling & Simulation Symposium |
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no |
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1839 |
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Elmanov, Ilia; Elmanova, Anna; Kovalyuk, Vadim; An, Pavel; Goltsman, Gregory |
| Title |
Silicon nitride photonic crystal cavity coupled with NV-centers in nanodiamonds |
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Conference Article |
| Year |
2020 |
Publication |
Proc. 32-nd EMSS |
Abbreviated Journal |
Proc. 32-nd EMSS |
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344-348 |
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The development of integrated quantum photonics requires a high efficient excitation and coupling of a single photon source with on-chip devices. In this paper, we show our results of modelling for high-Q photonic crystal cavity, optimized for zero phonon line emission of NV-centers in nanodiamonds. Modelling was performed for the silicon nitride platform and obtained a quality factor equals to 6136 at 637 nm wavelength. |
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NV-centers, nanodiamonds |
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2724-0029 |
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978-88-85741-44-7 |
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32nd European Modeling & Simulation Symposium |
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1840 |
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Vasilev, D. D.; Malevannaya, E. I.; Moiseev, K. M.; Zolotov, P. I.; Antipov, A. V.; Vakhtomin, Y. B.; Smirnov, K. V. |
| Title |
Influence of deposited material energy on superconducting properties of the WSi films |
Type |
Conference Article |
| Year |
2020 |
Publication |
IOP Conf. Ser.: Mater. Sci. Eng. |
Abbreviated Journal |
IOP Conf. Ser.: Mater. Sci. Eng. |
| Volume |
781 |
Issue |
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Pages |
012013 (1 to 6) |
| Keywords |
WSi SSPD, SNSPD |
| Abstract |
WSi thin films have the advantages for creating SNSPDs with a large active area or array of detectors on a single substrate due to the amorphous structure. The superconducting properties of ultrathin WSi films substantially depends on their structure and thickness as the NbN films. Scientific groups investigating WSi films mainly focused only on changes of their thickness and the ratio of the components on the substrate at room temperature. This paper presents experiments to determine the effect of the bias potential on the substrate, the temperature of the substrate, and the peak power of pulsed magnetron sputtering, which is the equivalent of ionization, a tungsten target, on the surface resistance and superconducting properties of the WSi ultrathin films. The negative effect of the substrate temperature and the positive effect of the bias potential and the ionization coefficient (peak current) allow one to choose the best WSi films formation mode for SNSPD: substrate temperature 297 K, bias potential -60 V, and peak current 3.5 A. |
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1757-899X |
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no |
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1798 |
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Antipov, A. V.; Seleznev, V. A.; Vakhtomin, Y. B.; Morozov, P. V.; Vasilev, D. D.; Malevannaya, E. I.; Moiseev, K. M.; Smirnov, K. |
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Investigation of WSi and NbN superconducting single-photon detectors in mid-IR range |
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Conference Article |
| Year |
2020 |
Publication |
IOP Conf. Ser.: Mater. Sci. Eng. |
Abbreviated Journal |
IOP Conf. Ser.: Mater. Sci. Eng. |
| Volume |
781 |
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012011 (1 to 5) |
| Keywords |
WSi, NbN SSPD, SNSPD |
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Spectral characteristics of WSi and NbN superconducting single-photon detectors with different surface resistance and width of nanowire strips have been investigated in the wavelength range of 1.3-2.5 μm. WSi structures with narrower strips demonstrated better performance for detection of single photons in longer wavelength range. The difference in normalized photon count rate for such structures reaches one order of magnitude higher in comparison with structures based on NbN thin films at 2.5 μm. |
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1757-899X |
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1799 |
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Romanov, N. R.; Zolotov, P. I.; Smirnov, K. V. |
| Title |
Development of disordered ultra-thin superconducting vanadium nitride films |
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Conference Article |
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2019 |
Publication |
Proc. 8th Int. Conf. Photonics and Information Optics |
Abbreviated Journal |
Proc. 8th Int. Conf. Photonics and Information Optics |
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425-426 |
| Keywords |
VN films |
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We present the results of development and research of superconducting vanadium nitride VN films ~10 nm thick having different level of disorder. It is showed that both silicon substrate temperature T sub in process of magnetron sputtering and total gas pressure P affect superconducting transition temperature of sputtered films and R 300 /R 20 ratio defining their level of disorder. VN films suitable for development of superconducting single-photon detectors on their basis are obtained. |
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Russian |
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978-5-7262-2536-4 |
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| Notes |
http://fioconf.mephi.ru/files/2018/12/FIO2019-Sbornik.pdf |
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1802 |
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