| Records |
| Author |
Bennett, Douglas A.; Schmidt, Daniel R.; Swetz, Daniel S.; Ullom, Joel N. |
| Title |
Phase-slip lines as a resistance mechanism in transition-edge sensors |
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Journal Article |
| Year |
2014 |
Publication |
Appl. Phys. Lett. |
Abbreviated Journal |
Appl. Phys. Lett. |
| Volume |
104 |
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Pages |
042602 |
| Keywords |
microbolometers, TES, phase-slip lines, PSL |
| Abstract |
The fundamental mechanism of resistance in voltage-biased superconducting films is poorly understood despite its importance as the basis of transition-edge sensors (TESs). TESs are utilized in state-of-the-art microbolometers and microcalorimeters covering a wide range of energies and applications. We present a model for the resistance of a TES based on phase-slip lines (PSLs) and compare the model to data. One of the model's predictions, discrete changes in the number of PSLs, is a possible explanation for the observed switching between discrete current states in localized regions of bias. |
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Recommended by Klapwijk |
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929 |
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Titova, N; Kardakova, A.; Tovpeko, N; Ryabchun, S.; Mandal, S.; Morozov, D.; Klemencic, G. M.; Giblin, S.R.; Williams, O. A.; Goltsman, G. N. |
| Title |
Superconducting diamond films as perspective material for direct THz detectors |
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Abstract |
| Year |
2017 |
Publication |
Proc. 28th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 28th Int. Symp. Space Terahertz Technol. |
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82 |
| Keywords |
KID, HEB, superconducting diamond films, boron-doped diamond films, Al, TiN, Si substrates, NEP |
| Abstract |
Superconducting films with a high resistivity in the normal state have established themselves as the best materials for direct THz radiation sensors, such as kinetic inductance detectors (KIDs) [1] and hot electron bolometers (nano-HEBs) [2]. The primary characteristics of the future instrument such as the sensitivity and the response time are determined by the material parameters such as the electron-phonon (e-ph) interaction time, the electron density and the resistivity of the material. For direct detectors, such as KIDs and nano-HEBs, to provide a high sensitivity and low noise one prefer materials with long e-ph relaxation times and low values of the electron density. As a potential material for THz radiation detection we have studied superconducting diamond films. A significant interest to diamond for the development of electronic devices is due to the evolution of its properties with the boron dopant concentration. At a high boron doping concentration, n B ~5·10 20 cm -3 , diamond has been reported to become a superconducting with T c depending on the doping level. Our previous study of energy relaxation in single-crystalline boron-doped diamond films epitaxially grown on a diamond shows a remarkably slow energy-relaxation at low temperatures. The electron-phonon cooling time varies from 400 ns to 700 ns over the temperature range 2.2 K to 1.7 K [3]. In superconducting materials such as Al and TiN, traditionally used in KIDs, the e-ph cooling times at 1.7 K correspond to ~20 ns [4] and ~100 ns [5], correspondingly. Such a noticeable slow e-ph relaxation in boron-doped diamond, in combination with a low value of carrier density (~10 21 cm -3 ) in comparison with typical metals (~10 23 cm -3 ) and a high normal state resistivity (~1500 μΩ·cm) confirms a potential of superconducting diamond for superconducting bolometers and resonator detectors. However, the price and the small substrate growth are of single crystal diamond limit practical applications of homoepitaxial diamond films. As an alternative way with more convenient technology, one can employ heteroepitaxial diamond films grown on large-size Si substrates. Here we report about measurements of e-ph cooling times in superconducting diamond grown on silicon substrate and discuss our expectations about the applicability of boron-doped diamond films to superconducting detectors. Our estimation of limit value of noise-equivalent power (NEP) and the energy resolution of bolometer made from superconducting diamond is order 10 -17 W/Hz 1/2 at 2 K and the energy resolution is of 0.1 eV that corresponds to counting single-photon up to 15 um. The estimation was obtained by using the film thickness of 70 nm and ρ ~ 1500 μΩ·cm, and the planar dimensions that are chosen to couple bolometer with 75 Ω log-spiral antenna. Although the value of NEP is far yet from what might like to have for certain astronomical applications, we believe that it can be improved by a suitable fabrication process. Also the direct detectors, based on superconducting diamond, will offer low noise performance at about 2 K, a temperature provided by inexpensive close-cycle refrigerators, which provides another practical advantage of development and application of these devices. [1] P.K. Day, et. al, Nature, 425, 817, 2003. [2] J. Wei, et al, Nature Nanotech., 3, 496, 2008. [3] A. Kardakova, et al, Phys. Rev. B, 93, 064506, 2016. [4] P. Santhanam and D. Prober, Phys. Rev. B, 29, 3733, 1984 [5] A. Kardakova, et al, Appl. Phys. Lett, vol. 103, p. 252602, 2013. |
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1173 |
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Manus, M. K. Mc; Kash, J. A.; Steen, S. E.; Polonsky, S.; Tsang, J.C.; Knebel, D. R.; Huott, W. |
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PICA: Backside failure analysis of CMOS circuits using picosecond imaging circuit analysis |
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Journal Article |
| Year |
2000 |
Publication |
Microelectronics Reliability |
Abbreviated Journal |
Microelectronics Reliability |
| Volume |
40 |
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Pages |
1353-1358 |
| Keywords |
SSPD, CMOS testing |
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Normal operation of complementary metal-oxide semiconductor (CMOS) devices entails the emission of picosecond pulses of light, which can be used to diagnose circuit problems. The pulses that are observed from submicron sized field effect transistors (FETs) are synchronous with logic state switching. Picosecond Imaging Circuit Analysis (PICA), a new optical imaging technique combining imaging with timing, spatially resolves individual devices at the 0.5 micron level and switching events on a 10 picosecond timescale. PICA is used here for the diagnostics of failures on two VLSI microprocessors. |
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1054 |
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Hartogh, P.; Jarchow, C.; Lellouch, E.; de Val-Borro, M.; Rengel, M.; Moreno, R.; Medvedev, A. S.; Sagawa, H.; Swinyard, B. M.; Cavalié, T.; Lis, D. C.; BłÄ™cka, M. I.; Banaszkiewicz, M.; Bockelée-Morvan, D.; Crovisier, J.; Encrenaz, T.; Küppers, M.; Lara, L.-M.; Szutowicz, S.; Vandenbussche, B.; Bensch, F.; Bergin, E. A.; Billebaud, F.; Biver, N.; Blake, G. A.; Blommaert, J. A. D. L.; Cernicharo, J.; Decin, L.; Encrenaz, P.; Feuchtgruber, H.; Fulton, T.; de Graauw, T.; Jehin, E.; Kidger, M.; Lorente, R.; Naylor, D. A.; Portyankina, G.; Sánchez-Portal, M.; Schieder, R.; Sidher, S.; Thomas, N.; Verdugo, E.; Waelkens, C.; Whyborn, N.; Teyssier, D.; Helmich, F.; Roelfsema, P.; Stutzki, J.; LeDuc, H. G.; Stern, J. A. |
| Title |
Herschel/HIFI observations of Mars: First detection of O2 at submillimetre wavelengths and upper limits on HCl and H2O2 |
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Journal Article |
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2010 |
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Astron. Astrophys. |
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521 |
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L49 |
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HEB mixer applications, HIFI, Herschel, planets and satellites: atmospheres / radiative transfer / submillimeter: general / molecular processes |
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We report on an initial analysis of Herschel/HIFI observations of hydrogen chloride (HCl), hydrogen peroxide (H2O2), and molecular oxygen (O2) in the Martian atmosphere performed on 13 and 16 April 2010 (Ls ~ 77°). We derived a constant volume mixing ratio of 1400 ± 120 ppm for O2 and determined upper limits of 200 ppt for HCl and 2 ppb for H2O2. Radiative transfer model calculations indicate that the vertical profile of O2 may not be constant. Photochemical models determine the lowest values of H2O2 to be around Ls ~ 75° but overestimate the volume mixing ratio compared to our measurements. |
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1093 |
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Tretyakov, I.; Shurakov, A.; Perepelitsa, A.; Kaurova, N.; Svyatodukh, S.; Zilberley, T.; Ryabchun, S.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G. |
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Silicon room temperature IR detectors coated with Ag2S quantum dots |
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Conference Article |
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2019 |
Publication |
Proc. IWQO |
Abbreviated Journal |
Proc. IWQO |
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369-371 |
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silicon detector, quantum dot, IR, surface states |
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For decades silicon has been the chief technological semiconducting material of modern microelectronics. Application of silicon detectors in optoelectronic devices are limited to the visible and near infrared ranges, due to their transparency for radiation with a wavelength higher than 1.1 μm. The expansion Si absorption towards longer wave lengths is a considerable interest to optoelectronic applications. In this work we present an elegant and effective solution to this problem using Ag2S quantum dots, creating impurity states in Si to cause sub-band gap photon absorption. The sensitivity of room temperature zero-bias Si_Ag2S detectors, which we obtained is 1011 cmHzW . Given the variety of QDs parameters such as: material, dimensions, our results open a path towards the future study and development of Si detectors for technological applications. |
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978-5-89513-451-1 |
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1154 |
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