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Shurakov, A., Maslennikov, S., Tong, C. -yu E., & Gol’tsman, G. (2015). Performance of an HEB direct detector utilizing a microwave reflection readout scheme. In Proc. 26th Int. Symp. Space Terahertz Technol. (36).
Abstract: We report the results of our study on the performance of a hot electron bolometric (HEB) direct detector, operated by a microwave pump. The HEB devices used in this work were made from NbN thin film deposited on high resistivity silicon with an in-situ fabrication process. The experimental setup employed is similar to the one described in [1]. The detector chips were glued to a silicon lens clamped to a copper holder mounted on the cold plate of a liquid helium cryostat. Thermal link between the lens and the holder was maintained by a thin indium shim. The HEBs were operated at a bath temperature of about 4.4 K. Conventional phonon pump, commonly realized by raising the bath temperature of the detector, was substituted by a microwave one. In this case, a CW microwave signal is injected to the device through a directional coupler connected directly to the detector holder. The power incident on the HEB device was typically 1-2 μW, and the pump frequency was in the range of 0.5-1.5 GHz. The signal sources were 2 black bodies held at temperatures of 295 K and 77 K. A chopper wheel placed in front of the cryostat window switched the input to the detector between the 2 sources. A modulation frequency of several kilohertz was chosen in order to reduce the effects of the HEB’s flicker noise. A cold mesh filter was used to define the input bandwidth of the detector. The reflected microwave signal from the HEB device was fed into a low noise amplifier, the output of which is connected to a room temperature Schottky microwave power detector. This Schottky detector, in conjunction with a lock-in amplifier, demodulated the input signal modulation from the copper wheel. As the input load was switched, the impedance of the HEB device at the microwave pump frequency also changed in response to the incident signal power variation. Therefore the reflected microwave power follows the incident signal modulation. The derived responsivity from this detection system nicely correlates with the HEB impedance. In order to provide a quantitative description of the impedance variation of the HEB device and the impact of a microwave pump, we have numerically solved the heat balance equations written for the NbN bridge and its surrounding thermal heat sink [2]. Our model also accounts for the impact of the operating frequency of the detector because of non-uniform absorption of low-frequency photons across the NbN bridge [3]. In our measurements we varied the signal source wavelength from 2 mm down to near infrared range, and hence we indirectly performed the impedance measurements at frequencies below, around and far beyond the superconducting gap. Preliminary results show good agreement between the experiment and theoretical prediction. Further measurements are still in progress. [1] A. Shurakov et al., “A Microwave Reflection Readout Scheme for Hot Electron Bolometric Direct Detector”, to appear in IEEE Trans. THz Sci. Tech., 2015. [2] S. Maslennikov, “RF heating efficiency of the terahertz superconducting hot-electron bolometer”, http://arxiv.org/pdf/1404.5276v5.pdf, 2014. [3] W. Miao et al., “Non-uniform absorption of terahertz radiation on superconducting hot electron bolometer microbridges”, Appl. Phys. Let., 104, 052605, 2014.
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Shangina, E. L., Smirnov, K. V., Morozov, D. V., Kovalyuk, V. V., Gol’tsman, G. N., Verevkin, A. A., et al. (2010). Concentration dependence of the intermediate frequency bandwidth of submillimeter heterodyne AlGaAs/GaAs nanostructures. Bull. Russ. Acad. Sci. Phys., 74(1), 100–102.
Abstract: The concentration dependence of the intermediate frequency bandwidth of heterodyne AlGaAs/GaAs detectors with 2D electron gas is measured using submillimeter spectroscopy with high time resolution at T= 4.2 K. The intermediate frequency bandwidth f3dBfalls from 245 to 145 MHz with increasing concentration of 2D electrons n s = (1.6-6.6) × 10[su11] cm-2. The dependence f3dB ≈ n s – 0.04±is observed in the studied concentration range; this dependence is determined by electron scattering by the deformation potential of acoustic phonons and piezoelectric scattering.
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Elezov, M. S., Shcherbatenko, M. L., Sych, D. V., & Goltsman, G. N. (2020). Development of control method for an optimal quantum receiver. In J. Phys.: Conf. Ser. (Vol. 1695, 012126).
Abstract: We propose a method for optimal displacement controlling of an optimal quantum receiver for registrations a binary coherent signal. An optimal receiver is able to distinguish between two phase-modulated states of a coherent signal. The optimal receiver controlling method can be used later in practice in various physical implementations of the optimal receiver.
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Polyakova, M. I., Florya, I. N., Semenov, A. V., Korneev, A. A., & Goltsman, G. N. (2019). Extracting hot-spot correlation length from SNSPD tomography data. In J. Phys.: Conf. Ser. (Vol. 1410, 012166 (1 to 4)).
Abstract: We present data of quantum detector tomography for the samples specifically optimized for this problem. Using this method, we take results of hot-spot correlation length of 17 ± 2 nm.
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Елезов, М. С., Щербатенко, М. Л., Сыч, Д. В., & Гольцман, Г. Н. (2019). Практические особенности работы оптоволоконного квантового приемника Кеннеди. In Proc. IWQO (pp. 303–305).
Abstract: Мы рассматриваем практические особенности работы квантового приемника на основе схемы Кеннеди, собранного из стандартных оптоволоконных элементов и сверхпроводникового детектора одиночных фотонов. Приемник разработан для различения двух фазовомодулированных когерентных состояний света на длине волны 1,5 микрона в непрерывном режиме с частотой модуляции 200 КГц и уровнем ошибок различения примерно в два раза ниже стандартного квантового предела.
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Goltsman, G. (2019). Quantum-photonic integrated circuits. In Proc. IWQO (pp. 22–23).
Abstract: We show the design, a history of development as well as the most successful and promising approaches for QPICs realization based on hybrid nanophotonic-superconducting devices, where one of the key elements of such a circuit is a waveguide integrated superconducting single-photon detector (WSSPD). The potential of integration with fluorescent molecules is discussed also.
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Svechnikov, S. I., Finkel, M. I., Maslennikov, S. N., Vachtomin, Y. B., Smirnov, K. V., Seleznev, V. A., et al. (2006). Superconducting hot electron bolometer mixer for middle IR range. In Proc. 16th Int. Crimean Microwave and Telecommunication Technology (Vol. 2, pp. 686–687).
Abstract: The developed directly lens coupled hot electron bolometer (HEB) mixer was based on 5 nm superconducting NbN deposited on GaAs substrate. The layout of the structure, including 30x20 mcm^2 active area coupled with a 50 Ohm coplanar line, was patterned by photolithography. The responsivity of the mixer was measured in a direct detection mode in the 25-64 THz frequency range. The noise performance of the mixer and the directivity of the receiver were investigated in a heterodyne mode. A 10.6 mum wavelength CW CO2 laser was utilized as a local oscillator.
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Gayduchenko, I., Fedorov, G., Titova, N., Moskotin, M., Obraztsova, E., Rybin, M., et al. (2018). Towards to the development of THz detectors based on carbon nanostructures. In J. Phys.: Conf. Ser. (Vol. 1092, 012039 (1 to 4)).
Abstract: Demand for efficient terahertz radiation detectors resulted in intensive study of the carbon nanostructures as possible solution for that problem. In this work we investigate the response to sub-terahertz radiation of detectors with sensor elements based on CVD graphene as well as its derivatives – carbon nanotubes (CNTs). The devices are made in configuration of field effect transistors (FET) with asymmetric source and drain (vanadium and gold) contacts and operate as lateral Schottky diodes. We show that at 300K semiconducting CNTs show better performance up to 300GHz with responsivity up to 100V/W, while quasi-metallic CNTs are shown to operate up to 2.5THz. At 300 K graphene detector exhibit the room-temperature responsivity from R = 15 V/W at f = 129 GHz to R = 3 V/W at f = 450 GHz. We find that at low temperatures (77K) the graphene lateral Schottky diodes responsivity rises with the increasing frequency of the incident sub-THz radiation. We interpret this result as a manifestation of a plasmonic effect in the devices with the relatively long plasmonic wavelengths. The obtained data allows for determination of the most promising directions of development of the technology of nanocarbon structures for the detection of THz radiation.
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Anfertev, V., Vaks, V., Revin, L., Pentin, I., Tretyakov, I., Goltsman, G., et al. (2017). High resolution THz gas spectrometer based on semiconductor and superconductor devices. In EPJ Web Conf. (Vol. 132, 02001 (1 to 2)).
Abstract: The high resolution THz gas spectrometer consists of a synthesizer based on Gunn generator with a semiconductor superlattice frequency multiplier as a radiation source, and an NbN hot electron bolometer in a direct detection mode as a THz radiation receiver was presented. The possibility of application of a quantum cascade laser as a local oscillator for a heterodyne receiver which is based on an NbN hot electron bolometer mixer is shown. The ways for further developing of the THz spectroscopy were outlined.
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Shurakov, A., Tong, C. -yu E., Blundell, R., & Gol’tsman, G. (2014). A microwave pumped HEB direct detector using a homodyne readout scheme. In Proc. 25th Int. Symp. Space Terahertz Technol. (129).
Abstract: We report the results of our study on the noise performance of a fast THz detector based on the repurpose of hot electron bolometer mixer (HEB). Instead of operating with an elevated bath temperature, microwave power is injected into the HEB device, which enhances the sensitivity of the detector and at the same time provide a mechanism for reading out impedance changes of the device induced by the modulated incident THz radiation [1]. We have demonstrated an improvement of the detector’s optical noise equivalent power (NEP). Furthermore, by introducing a homodyne readout scheme based on a room temperature microwave mixer, the dynamic range of the detector is increased. The HEB devices used in this work were made of 4 nm thick NbN film. The detector chips were installed into a waveguide mixer block fitted with a corrugated horn, mounted on the cold plate of a liquid helium cryostat. The HEBs were operated at a bath temperature of 4.2 K. The signal beam was terminated on black bodies at ambient and liquid nitrogen temperatures. A chopper wheel placed in front of the cryostat window operating at a frequency of 1.48 kHz modulated the input load temperature of the detector. A cold mesh filter, centered at 830 GHz, was used to define the input signal power bandwidth. Microwave was injected through a broadband directional coupler inside the cryostat. Our experiments were mostly conducted at a pump frequency of 1.5 GHz. The reflected microwave power from the HEB device was fed into a cryogenic low noise amplifier (LNA). The output of the LNA was connected to the RF input port of a room temperature microwave mixer, which beat the reflected signal from the HEB using a copy of the original 1.5 GHz injection signal in a homodyne demodulation scheme. The amplitude of the detected power was measured by a lock-in amplifier, which was synchronized to the chopper frequency. Preliminary results yield an optical NEP of ~1 pW/ Hz 1/2 which corresponds to an improvement of a factor of 3 compared to [1], driven mainly by a lowering of the system noise floor. The dynamic range was also increased by similar amount. References 1. A. Shurakov et al. “A Microwave Pumped Hot Electron Bolometric Direct Detector,” submitted on Oct 18, 2013 to Appl. Phys. Let.
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