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| Author | Li, T. F.; Pashkin, Yu. A.; Astafiev, O.; Nakamura, Y.; Tsai, J. S.; Im, H. | ||||
| Title | High-frequency metallic nanomechanical resonators | Type | Journal Article | ||
| Year | 2008 | Publication | Appl. Phys. Lett. | Abbreviated Journal | Appl. Phys. Lett. |
| Volume | 92 | Issue | Pages | 043112(1)-043112(3) | |
| Keywords | nanomechanical resonator, polycrystalline metal films | ||||
| Abstract | We developed a technology to fabricate fully metallic doubly clamped beams working as nanomechanical resonators. Measured with a magnetomotive detection scheme, the beams, made of polycrystalline metal films, show as good quality as previously reported ones made of single crystal materials, such as Si, GaAs, AlN, and SiC. Our method is compatible with the conventional fabrication process for nanoscale electronic circuits and thus offers a possibility of easily integrating the beams into superconducting charge and flux qubits and single-electron transistors as well as coupling them to coplanar waveguide resonators. | ||||
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| Notes | Approved | no | |||
| Call Number | Serial  |
621 | |||
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| Author | Tretyakov, Ivan; Ryabchun, Sergey; Finkel, Matvey; Maslennikova, Anna; Kaurova, Natalia; Lobastova, Anastasia; Voronov, Boris; Gol'tsman, Gregory | ||||
| Title | Low noise and wide bandwidth of NbN hot-electron bolometer mixers | Type | Journal Article | ||
| Year | 2011 | Publication | Appl. Phys. Lett. | Abbreviated Journal | Appl. Phys. Lett. |
| Volume | 98 | Issue | Pages | 033507 (1 to 3) | |
| Keywords | NbN HEB mixer | ||||
| Abstract | We report a record double sideband noise temperature of 600 K (5hν/kB) offered by a NbN hot-electron bolometer receiver at 2.5 THz. Allowing for standing wave effects, this value was found to be constant in the intermediate frequency range 1–7 GHz, which indicates that the mixer has an unprecedentedly large noise bandwidth in excess of 7 GHz. The insight into this is provided by gain bandwidth measurements performed at the superconducting transition. They show that the dependence of the bandwidth on the mixer length follows the model for an HEB mixer with diffusion and phonon cooling of the hot electrons. | ||||
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| Notes | Approved | no | |||
| Call Number | RPLAB @ gujma @ | Serial |
638 | ||
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| Author | Il'in, K. S.; Lindgren, M.; Currie, M. A.; Semenov, D.; Gol'tsman, G. N.; Sobolewski, Roman; Cherednichenko, S. I.; Gershenzon, E. M. | ||||
| Title | Picosecond hot-electron energy relaxation in NbN superconducting photodetectors | Type | Journal Article | ||
| Year | 2000 | Publication | Appl. Phys. Lett. | Abbreviated Journal | Appl. Phys. Lett. |
| Volume | 76 | Issue | 19 | Pages | 2752-2754 |
| Keywords | NbN HEB detectors, two-temperature model, IF bandwidth | ||||
| Abstract | We report time-resolved characterization of superconducting NbN hot-electron photodetectors using an electro-optic sampling method. Our samples were patterned into micron-size microbridges from 3.5-nm-thick NbN films deposited on sapphire substrates. The devices were illuminated with 100 fs optical pulses, and the photoresponse was measured in the ambient temperature range between 2.15 and 10.6 K (superconducting temperature transition TC). The experimental data agreed very well with the nonequilibrium hot-electron, two-temperature model. The quasiparticle thermalization time was ambient temperature independent and was measured to be 6.5 ps. The inelastic electron–phonon scattering time Ï„e–ph tended to decrease with the temperature increase, although its change remained within the experimental error, while the phonon escape time Ï„es decreased almost by a factor of two when the sample was put in direct contact with superfluid helium. Specifically, Ï„e–ph and Ï„es, fitted by the two-temperature model, were equal to 11.6 and 21 ps at 2.15 K, and 10(±2) and 38 ps at 10.5 K, respectively. The obtained value of Ï„e–ph shows that the maximum intermediate frequency bandwidth of NbN hot-electron phonon-cooled mixers operating at TC can reach 16(+4/–3) GHz if one eliminates the bolometric phonon-heating effect. | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 0003-6951 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial |
856 | |||
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| Author | Kataoka, T; Kajikawa, K.; Kitagawa, J.; Kadoya, Y; Takemura, Y. | ||||
| Title | Improved sensitivity of terahertz detection by GaAs photoconductive antennas excited at 1560 nm | Type | Journal Article | ||
| Year | 2010 | Publication | Appl. Phys. Lett. | Abbreviated Journal | Appl. Phys. Lett. |
| Volume | 97 | Issue | Pages | 201110 (1-3) | |
| Keywords | photoconductive antenna (PCA) | ||||
| Abstract | The terahertz detection by photoconductive antennas (PCAs) based on low-temperature grown (LTG) GaAs with 1.5 μm pulse excitation was revisited. We found that the detection efficiency can be improved by a factor of 10 (20 dB) by reducing the excitation spot size and the gap length of the PCA, maintaining the low noise feature of the PCA on LTG GaAs. As a result, the signal-to-noise ratio higher than 50 dB was obtained at a reasonable incident power of 9.5 mW, suggesting that the scheme is promising for the detection of terahertz waves in practical time domain systems. | ||||
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| Notes | Approved | no | |||
| Call Number | Serial |
904 | |||
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| Author | Gao, J. R.; Hovenier, J. N.; Yang, Z. Q.; Baselmans, J. J. A.; Baryshev, A.; Hajenius, M.; Klapwijk, T. M.; Adam, A. J. L.; Klaassen, T. O.; Williams, B. S.; Kumar, S.; Hu, Q.; Reno, J. L. | ||||
| Title | Terahertz heterodyne receiver based on a quantum cascade laser and a superconducting bolometer | Type | Journal Article | ||
| Year | 2005 | Publication | Appl. Phys. Lett. | Abbreviated Journal | Appl. Phys. Lett. |
| Volume | 86 | Issue | Pages | 244104 (1 to 3) | |
| Keywords | HEB, QCL | ||||
| Abstract | We report the first demonstration of an all solid-stateheterodyne receiver that can be used for high-resolution spectroscopy above 2THz suitable for space-based observatories. The receiver uses a NbN superconducting hot-electron bolometer as mixer and a quantum cascade laser operating at 2.8THz as local oscillator. We measure a double sideband receiver noise temperature of 1400K at 2.8THz and 4.2K, and find that the free-running QCL has sufficient power stability for a practical receiver, demonstrating an unprecedented combination of sensitivity and stability. | ||||
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| Notes | Approved | no | |||
| Call Number | Serial |
905 | |||
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| Author | Yagoubov, P.; Kroug, M.; Merkel, H.; Kollberg, E.; Gol'tsman, G.; Svechnikov, S.; Gershenzon, E. | ||||
| Title | Noise temperature and local oscillator power requirement of NbN phonon-cooled hot electron bolometric mixers at terahertz frequencies | Type | Journal Article | ||
| Year | 1998 | Publication | Appl. Phys. Lett. | Abbreviated Journal | Appl. Phys. Lett. |
| Volume | 73 | Issue | 19 | Pages | 2814-2816 |
| Keywords | NbN HEB mixers, noise temperature, local oscillator power | ||||
| Abstract | In this letter, the noise performance of NbN-based phonon-cooled hot electron bolometric quasioptical mixers is investigated in the 0.55–1.1 THz frequency range. The best results of the double-sideband <cd><2018>DSB<cd><2019> noise temperature are: 500 K at 640 GHz, 600 K at 750 GHz, 850 K at 910 GHz, and 1250 K at 1.1 THz. The water vapor in the signal path causes significant contribution to the measured receiver noise temperature around 1.1 THz. The devices are made from 3-nm-thick NbN film on high-resistivity Si and integrated with a planar spiral antenna on the same substrate. The in-plane dimensions of the bolometer strip are typically 0.2Ï«2 um. The amount of local oscillator power absorbed in the bolometer is less than 100 nW. | ||||
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| Notes | Approved | no | |||
| Call Number | Serial |
911 | |||
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| Author | Bennett, Douglas A.; Schmidt, Daniel R.; Swetz, Daniel S.; Ullom, Joel N. | ||||
| Title | Phase-slip lines as a resistance mechanism in transition-edge sensors | Type | Journal Article | ||
| Year | 2014 | Publication | Appl. Phys. Lett. | Abbreviated Journal | Appl. Phys. Lett. |
| Volume | 104 | Issue | Pages | 042602 | |
| Keywords | microbolometers, TES, phase-slip lines, PSL | ||||
| Abstract | The fundamental mechanism of resistance in voltage-biased superconducting films is poorly understood despite its importance as the basis of transition-edge sensors (TESs). TESs are utilized in state-of-the-art microbolometers and microcalorimeters covering a wide range of energies and applications. We present a model for the resistance of a TES based on phase-slip lines (PSLs) and compare the model to data. One of the model's predictions, discrete changes in the number of PSLs, is a possible explanation for the observed switching between discrete current states in localized regions of bias. | ||||
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| Notes | Recommended by Klapwijk | Approved | no | ||
| Call Number | Serial |
929 | |||
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| Author | Swetz, D. S.; Bennett, D. A.; Irwin, K. D.; Schmidt, D. R.; Ullom, J. N. | ||||
| Title | Current distribution and transition width in superconducting transition-edge sensors | Type | Journal Article | ||
| Year | 2012 | Publication | Appl. Phys. Lett. | Abbreviated Journal | Appl. Phys. Lett. |
| Volume | 101 | Issue | Pages | 242603 | |
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| Abstract | Present models of the superconducting-to-normal transition in transition-edge sensors (TESs) do not describe the current distribution within a biased TES. This distribution is complicated by normal-metal features that are integral to TES design. We present a model with one free parameter that describes the evolution of the current distribution with bias. To probe the current distribution experimentally, we fabricated TES devices with different current return geometries. Devices where the current return geometry mirrors current flow within the device have sharper transitions, thus allowing for a direct test of the current-flow model.Measurements from these devices show that current meanders through a TES low in the resistivetransition but flows across the normal-metal features by 40% of the normal-state resistance. Comparison of transition sharpness between device designs reveals that self-induced magnetic fields play an important role in determining the width of the superconducting transition. | ||||
| Address | TES, current distribution | ||||
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| Notes | Recommended by Klapwijk | Approved | no | ||
| Call Number | Serial |
930 | |||
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| Author | Miao, W.; Zhang, W.; Zhong, J. Q.; Shi, S. C.; Delorme, Y.; Lefevre, R.; Feret, A; Vacelet, T | ||||
| Title | Non-uniform absorption of terahertz radiation on superconducting hot electron bolometer microbridges | Type | Journal Article | ||
| Year | 2014 | Publication | Appl. Phys. Lett. | Abbreviated Journal | <ef><bf><bc>Appl. Phys. Lett. |
| Volume | 104 | Issue | Pages | 052605(1-4) | |
| Keywords | NbN HEB mixers, local oscillator power, RF nonuniform absorption | ||||
| Abstract | We interpret the experimental observation of a frequency-dependence of superconducting hot electron bolometer (HEB) mixers by taking into account the non-uniform absorption of the terahertz radiation on the superconducting HEB microbridge. The radiation absorption is assumed to be proportional to the local surface resistance of the HEB microbridge, which is computed using the Mattis-Bardeen theory. With this assumption the dc and mixing characteristics of a superconducting niobium-nitride (NbN) HEB device have been modeled at frequencies below and above the equilibrium gap frequency of the NbN film. | ||||
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| Notes | Approved | no | |||
| Call Number | Serial |
935 | |||
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| Author | Kardakova, A.; Finkel, M.; Morozov, D.; Kovalyuk, V.; An, P.; Dunscombe, C.; Tarkhov, M.; Mauskopf, P.; Klapwijk, T.M.; Goltsman, G. | ||||
| Title | The electron-phonon relaxation time in thin superconducting titanium nitride films | Type | Journal Article | ||
| Year | 2013 | Publication | Appl. Phys. Lett. | Abbreviated Journal | Appl. Phys. Lett. |
| Volume | 103 | Issue | 25 | Pages | 252602 (1 to 4) |
| Keywords | disordered TiN films, electron-phonon relaxation time | ||||
| Abstract | We report on the direct measurement of the electron-phonon relaxation time, τeph, in disordered TiN films. Measured values of τeph are from 5.5 ns to 88 ns in the 4.2 to 1.7 K temperature range and consistent with a T−3 temperature dependence. The electronic density of states at the Fermi level N0 is estimated from measured material parameters. The presented results confirm that thin TiN films are promising candidate-materials for ultrasensitive superconducting detectors. The work was supported by the Ministry of Education and Science of the Russian Federation, Contract No. 14.B25.31.0007 and by the RFBR Grant No. 13-02-91159. |
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| Notes | Approved | no | |||
| Call Number | RPLAB @ kovalyuk @ | Serial |
941 | ||
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| Author | Floet D. W.; Gao J. R.; Klapwijk T. M.; de Korte P. A. J. | ||||
| Title | Bias Dependence of the Thermal Time Constant in Nb Superconducting Diffusion-Cooled HEB Mixers | Type | Journal Article | ||
| Year | 2000 | Publication | Appl. Phys. Lett. | Abbreviated Journal | Appl. Phys. Lett. |
| Volume | 77 | Issue | Pages | 1719 | |
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| Abstract | We present an experimental study of the intermediate frequency bandwidth of a Nb diffusion-cooled hot-electron bolometer mixer for different bias voltages. The measurements show that the bandwidth increases with increasing voltage. Analysis of the data reveals that this effect is mainly caused by a decrease of the intrinsic thermal time of the mixer and that the effect of electrothermal feedback through the intermediate frequency circuit is small. The results are understood using a qualitative model, which takes into account the different effective diffusion constants in the normal and superconducting domains. | ||||
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| Notes | Approved | no | |||
| Call Number | RPLAB @ atomics90 @ | Serial |
971 | ||
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| Author | Bueno, J.; Coumou, P. C. J. J.; Zheng, G.; de Visser, P. J.; Klapwijk, T. M.; Driessen, E. F. C.; Doyle, S.; Baselmans, J. J. A | ||||
| Title | Anomalous response of superconducting titanium nitride resonators to terahertz radiation | Type | Journal Article | ||
| Year | 2014 | Publication | Appl. Phys. Lett. | Abbreviated Journal | |
| Volume | 105 | Issue | Pages | 192601 (1 to 5) | |
| Keywords | KID, TiN, NEP, disordered superconductors, inhomogeneous state | ||||
| Abstract | We present an experimental study of kinetic inductance detectors (KIDs) fabricated of atomic layer deposited TiN films and characterized at radiation frequencies of 350 GHz. The responsivity to radiation is measured and found to increase with the increase in radiation powers, opposite to what is expected from theory and observed for hybrid niobium titanium nitride/aluminium (NbTiN/Al) and all-aluminium (all-Al) KIDs. The noise is found to be independent of the level of the radiation power. The noise equivalent power improves with higher radiation powers, also opposite to what is observed and well understood for hybrid NbTiN/Al and all-Al KIDs. We suggest that an inhomogeneous state of these disordered superconductors should be used to explain these observations. | ||||
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| Notes | Approved | no | |||
| Call Number | Serial |
1068 | |||
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| Author | Shcherbatenko, M.; Tretyakov, I.; Lobanov, Yu.; Maslennikov, S. N.; Kaurova, N.; Finkel, M.; Voronov, B.; Goltsman, G.; Klapwijk, T. M. | ||||
| Title | Nonequilibrium interpretation of DC properties of NbN superconducting hot electron bolometers | Type | Journal Article | ||
| Year | 2016 | Publication | Appl. Phys. Lett. | Abbreviated Journal | |
| Volume | 109 | Issue | 13 | Pages | 132602 |
| Keywords | HEB mixer, contacts | ||||
| Abstract | We present a physically consistent interpretation of the dc electrical properties of niobiumnitride (NbN)-based superconducting hot-electron bolometer mixers, using concepts of nonequilibrium superconductivity. Through this, we clarify what physical information can be extracted from the resistive transition and the dc current-voltage characteristics, measured at suitably chosen temperatures, and relevant for device characterization and optimization. We point out that the intrinsic spatial variation of the electronic properties of disordered superconductors, such as NbN, leads to a variation from device to device. | ||||
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| Notes | Approved | no | |||
| Call Number | Serial |
1107 | |||
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| Author | Fedorov, G.; Kardakova, A.; Gayduchenko, I.; Charayev, I.; Voronov, B.M.; Finkel, M.; Klapwijk, T.M.; Morozov, S.; Presniakov, M.; Bobrinetskiy, I.; Ibragimov, R.; Goltsman, G. | ||||
| Title | Photothermoelectric response in asymmetric carbon nanotube devices exposed to sub-terahertz radiation | Type | Journal Article | ||
| Year | 2013 | Publication | Appl. Phys. Lett. | Abbreviated Journal | Appl. Phys. Lett. |
| Volume | 103 | Issue | 18 | Pages | 181121 (1 to 5) |
| Keywords | carbon nanotubes, CNT, THz radiation, SiO2 substrate | ||||
| Abstract | We report on the voltage response of carbon nanotube devices to sub-terahertz (THz) radiation. The devices contain carbon nanotubes (CNTs), which are over their length partially suspended and partially Van der Waals bonded to a SiO2 substrate, causing a difference in thermal contact. We observe a DC voltage upon exposure to 140 GHz radiation. Based on the observed gate voltage and power dependence, at different temperatures, we argue that the observed signal is both thermal and photovoltaic. The room temperature responsivity in the microwave to THz range exceeds that of CNT based devices reported before. Authors thank Professor P. Barbara for providing the catalyst for CNT growth and Dr. N. Chumakov and V. Rylkov for stimulating discussions. The work was supported by the RFBR (Grant No. 12-02-01291-a) and by the Ministry of Education and Science of the Russian Federation (Contract No. 14.B25.31.0007). G.F. acknowledges support of the RFBR grant 12-02-01005-a. | ||||
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| ISSN | 0003-6951 | ISBN | Medium | ||
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| Notes | Approved | no | |||
| Call Number | Serial |
1171 | |||
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| Author | Ferrari, S.; Kovalyuk, V.; Vetter, A.; Lee, C.; Rockstuhl, C.; Semenov, A.; Gol'tsman, G.; Pernice, W. | ||||
| Title | Analysis of the detection response of waveguide-integrated superconducting nanowire single-photon detectors at high count rate | Type | Journal Article | ||
| Year | 2019 | Publication | Appl. Phys. Lett. | Abbreviated Journal | Appl. Phys. Lett. |
| Volume | 115 | Issue | 10 | Pages | 101104 |
| Keywords | SSPD, SNSPD, waveguide | ||||
| Abstract | Nanophotonic circuitry and superconducting nanowires have been successfully combined for detecting single photons, propagating in an integrated photonic circuit, with high efficiency and low noise and timing uncertainty. Waveguide-integrated superconducting nanowire single-photon detectors (SNSPDs) can nowadays be engineered to achieve subnanosecond recovery times and can potentially be adopted for applications requiring Gcps count rates. However, particular attention shall be paid to such an extreme count rate regime since artifacts in the detector functionality emerge. In particular, a count-rate dependent detection efficiency has been encountered that can compromise the accuracy of quantum detector tomography experiments. Here, we investigate the response of waveguide-integrated SNSPDs at high photon flux and identify the presence of parasitic currents due to the accumulation of charge in the readout electronics to cause the above-mentioned artifact in the detection efficiency. Our approach allows us to determine the maximum photon count rate at which the detector can be operated without adverse effects. Our findings are particularly important to avoid artifacts when applying SNSPDs for quantum tomography. We acknowledge support through ERC Consolidator Grant No. 724707 and from the Deutsche Forschungsgemeinschaft through Project No. PE 1832/5-1,2, as well as funding by the Volkswagen Foundation. This project has received funding from the European Union's Horizon 2020 research and innovation program under the Marie Skłodowska-Curie Grant Agreement No. 675745. V.K. and G.G. acknowledge support from the Russian Science Foundation Project No. 16-12-00045 (NbN film deposition and testing). A.V. acknowledges support from the Karlsruhe School of Optics and Photonics (KSOP). |
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| ISSN | 0003-6951 | ISBN | Medium | ||
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| Notes | Approved | no | |||
| Call Number | Serial |
1185 | |||
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