Records |
Author |
Beck, M.; Klammer, M.; Rousseau, I.; Gol’tsman, G. N.; Diamant, I.; Dagan, Y.; Demsar, J. |
Title |
Probing superconducting gap dynamics with THz pulses |
Type |
Conference Article |
Year |
2015 |
Publication |
CLEO |
Abbreviated Journal |
CLEO |
Volume |
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Issue |
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Pages |
SM3H.3 (1 to 2) |
Keywords |
superconducting gap; electric fields; femtosecond pulses; near infrared radiation; picosecond pulses; superconductors; thin films |
Abstract |
We studied superconducting gap dynamics in a BCS superconductor NbN and electron doped cuprate superconductor PCCO following excitation with near-infrared (NIR) and narrow band THz pulses. Systematic studies on PCCO imply very selective electron-phonon coupling. |
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Optical Society of America |
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Serial |
1345 |
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Author |
Tuchak, A. N.; Gol’tsman, G. N.; Kitaeva, G. K.; Penin, A. N.; Seliverstov, S. V.; Finkel, M. I.; Shepelev, A. V.; Yakunin, P. V. |
Title |
Generation of nanosecond terahertz pulses by the optical rectification method |
Type |
Journal Article |
Year |
2012 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
Volume |
96 |
Issue |
2 |
Pages |
94-97 |
Keywords |
optical rectification, lithium niobate crystal |
Abstract |
The possibility of the generation of quasi-cw terahertz radiation by the optical rectification method for broad-band Fourier unlimited nanosecond laser pulses has been experimentally demonstrated. The broadband radiation of a LiF dye-center laser is used as a pump source of a nonlinear optical oscillator. The energy efficiency of terahertz optical frequency conversion in a periodically polarized lithium niobate crystal is 4 × 10−9 at a pump power density of 7 MW/cm2. |
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0021-3640 |
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Serial |
1377 |
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Author |
Pentin, I. V.; Smirnov, A. V.; Ryabchun, S. A.; Ozhegov, R. V.; Gol’tsman, G. N.; Vaks, V. L.; Pripolzin, S. I.; Pavel’ev, D. G.; Koshurinov, Y. I.; Ivanov, A. S. |
Title |
Semiconducting superlattice as a solid-state terahertz local oscillator for NbN hot-electron bolometer mixers |
Type |
Journal Article |
Year |
2012 |
Publication |
Tech. Phys. |
Abbreviated Journal |
Tech. Phys. |
Volume |
57 |
Issue |
7 |
Pages |
971-974 |
Keywords |
semiconducting superlattice frequency multiplier, NbN HEB mixers |
Abstract |
We present the results of our studies of the semiconducting superlattice (SSL) frequency multiplier and its application as part of the solid state local oscillator (LO) in the terahertz heterodyne receiver based on a NbN hot-electron bolometer (HEB) mixer. We show that the SSL output power level increases as the ambient temperature is lowered to 4.2 K, the standard HEB operation temperature. |
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ISSN |
1063-7842 |
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no |
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Serial |
1378 |
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Author |
Ozhegov, R. V.; Gorshkov, K. N.; Okunev, O. V.; Gol’tsman, G. N. |
Title |
Superconducting hot-electron bolometer mixer as element of thermal imager matrix |
Type |
Journal Article |
Year |
2010 |
Publication |
Tech. Phys. Lett. |
Abbreviated Journal |
Tech. Phys. Lett. |
Volume |
36 |
Issue |
11 |
Pages |
1006-1008 |
Keywords |
HEB mixers |
Abstract |
The possibility of using a matrix of sensitive elements on a 12-mm-diameter hyperhemispherical lens in a thermal imager operating in the terahertz range has been studied. Dimensions of a lens region acceptable for arrangement of the matrix, in which the receiver noise temperature varies within 16% of the mean value, are determined to be 3.3% of the lens diameter. Deviations of the main lobe of the directivity pattern are evaluated, which amount to ±1.25° relative to the direction toward the optimum position of a mixer. The fluctuation sensitivity of the receiver measured in experiment is 0.5 K at a frequency of 300 GHz. |
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Edition |
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ISSN |
1063-7850 |
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no |
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Serial |
1390 |
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Author |
Elvira, D.; Michon, A.; Fain, B.; Patriarche, G.; Beaudoin, G.; Robert-Philip, I.; Vachtomin, Y.; Divochiy, A. V.; Smirnov, K. V.; Gol’tsman, G. N.; Sagnes, I.; Beveratos, A. |
Title |
Time-resolved spectroscopy of InAsP/InP(001) quantum dots emitting near 2 μm |
Type |
Journal Article |
Year |
2010 |
Publication |
Appl. Phys. Lett. |
Abbreviated Journal |
Appl. Phys. Lett. |
Volume |
97 |
Issue |
13 |
Pages |
131907 (1 to 3) |
Keywords |
SSPD, SNSPD, InAsP/InP quantum dots |
Abstract |
By using superconducting single photon detectors, we perform time-resolved characterization of a small ensemble of InAsP/InP quantum dots grown by metal organic vapor phase epitaxy, emitting at wavelengths between 1.6 and 2.2 μm. We demonstrate that alloying phosphorus with InAs allows to shift the emission wavelength toward higher wavelengths, while keeping the high optical quality of these quantum dots at room temperature, with no decrease in their radiative lifetime. This work was partially supported by Russian Ministry of Science and Education: Federal State Program “Scientific and Educational Cadres of Innovative” state Contract Nos. 02.740.0228, 14.740.11.0343, 14.740.11.0269, and P931, and RFBR Project No. 09-02-12364. |
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ISSN |
0003-6951 |
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no |
Call Number |
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Serial |
1238 |
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Author |
Smirnov, K. V.; Vakhtomin, Yu. B.; Divochiy, A. V.; Ozhegov, R. V.; Pentin, I. V.; Slivinskaya, E. V.; Tarkhov, M. A.; Gol’tsman, G. N. |
Title |
Single-photon detectors for the visible and infrared parts of the spectrum based on NbN nanostructures |
Type |
Abstract |
Year |
2009 |
Publication |
Proc. Progress In Electromagnetics Research Symp. |
Abbreviated Journal |
Proc. Progress In Electromagnetics Research Symp. |
Volume |
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Issue |
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Pages |
863-864 |
Keywords |
SSPD, SNSPD |
Abstract |
The research by the group of Moscow State Pedagogical University into the hot-electron phenomena in thin superconducting films has led to the development of new types ofdetectors [1, 2] and their use both in fundamental and applied studies [3–6]. In this paper, wepresent the results of the development and fabrication of receiving systems for the visible andinfrared parts of the spectrum optimised for use in telecommunication systems and quantumcryptography. |
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Moscow, Russia |
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RPLAB @ sasha @ smirnovsession |
Serial |
1050 |
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Author |
Shangina, E. L.; Smirnov, K. V.; Morozov, D. V.; Kovalyuk, V. V.; Gol’tsman, G. N.; Verevkin, A. A.; Toropov, A. I. |
Title |
Frequency bandwidth and conversion loss of a semiconductor heterodyne receiver with phonon cooling of two-dimensional electrons |
Type |
Journal Article |
Year |
2010 |
Publication |
Semicond. |
Abbreviated Journal |
Semicond. |
Volume |
44 |
Issue |
11 |
Pages |
1427-1429 |
Keywords |
2DEG, AlGaAs/GaAs heterostructures mixers |
Abstract |
The temperature and concentration dependences of the frequency bandwidth of terahertz heterodyne AlGaAs/GaAs detectors based on hot electron phenomena with phonon cooling of two-dimensional electrons have been measured by submillimeter spectroscopy with a high time resolution. At a temperature of 4.2 K, the frequency bandwidth at a level of 3 dB (f 3 dB) is varied from 150 to 250 MHz with a change in the concentration n s according to the power law f 3dB ∝ n −0.5 s due to the dominant contribution of piezoelectric phonon scattering. The minimum conversion loss of the semiconductor heterodyne detector is obtained in structures with a high carrier mobility (μ > 3 × 105 cm2 V−1 s−1 at 4.2 K). |
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1063-7826 |
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Notes |
Полоса и потери преобразования полупроводникового смесителя с фононным каналом охлаждения двумерных электронов |
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no |
Call Number |
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Serial |
1216 |
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Author |
Shangina, E. L.; Smirnov, K. V.; Morozov, D. V.; Kovalyuk, V. V.; Gol’tsman, G. N.; Verevkin, A. A.; Toropov, A. I. |
Title |
Concentration dependence of the intermediate frequency bandwidth of submillimeter heterodyne AlGaAs/GaAs nanostructures |
Type |
Journal Article |
Year |
2010 |
Publication |
Bull. Russ. Acad. Sci. Phys. |
Abbreviated Journal |
Bull. Russ. Acad. Sci. Phys. |
Volume |
74 |
Issue |
1 |
Pages |
100-102 |
Keywords |
2DEG AlGaAs/GaAs heterostructures, THz heterodyne detectors, IF bandwidth |
Abstract |
The concentration dependence of the intermediate frequency bandwidth of heterodyne AlGaAs/GaAs detectors with 2D electron gas is measured using submillimeter spectroscopy with high time resolution at T= 4.2 K. The intermediate frequency bandwidth f3dBfalls from 245 to 145 MHz with increasing concentration of 2D electrons n s = (1.6-6.6) × 10[su11] cm-2. The dependence f3dB ≈ n s – 0.04±is observed in the studied concentration range; this dependence is determined by electron scattering by the deformation potential of acoustic phonons and piezoelectric scattering. |
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1062-8738 |
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no |
Call Number |
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Serial |
1217 |
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Author |
Huebers, H.-W.; Schubert, J.; Semenov, A.; Gol’tsman, G. N.; Voronov, B. M.; Gershenzon, E. M.; Schwaab, G. W. |
Title |
NbN phonon-cooled hot-electron bolometer as a mixer for THz heterodyne receivers |
Type |
Conference Article |
Year |
1999 |
Publication |
Proc. SPIE |
Abbreviated Journal |
Proc. SPIE |
Volume |
3828 |
Issue |
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Pages |
410-416 |
Keywords |
NbN HEB mixers |
Abstract |
We have investigated a phonon-cooled NbN hot electron bolometric (HEB) mixer in the frequency range from 0.7 THz to 5.2 THz. The device was a 3.5 nm thin film with an in- plane dimension of 1.7 X 0.2 micrometers 2 integrated in a complementary logarithmic spiral antenna. The measured DSB receiver noise temperatures are 1500 K, 2200 K, 2600 K, 2900 K, 4000 K, 5600 K and 8800 K. The sensitivity fluctuation, the long term stability, and the antenna pattern were measured and the suitability of the mixer for a practical heterodyne receiver is discussed. |
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Spie |
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Editor |
Chamberlain, J.M. |
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Terahertz Spectroscopy and Applications II |
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no |
Call Number |
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Serial |
1477 |
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Author |
Svechnikov, S. I.; Finkel, M. I.; Maslennikov, S. N.; Vachtomin, Y. B.; Smirnov, K. V.; Seleznev, V. A.; Korotetskaya, Y. P.; Kaurova, N. S.; Voronov, B. M.; Gol’tsman, G. N. |
Title |
Superconducting hot electron bolometer mixer for middle IR range |
Type |
Conference Article |
Year |
2006 |
Publication |
Proc. 16th Int. Crimean Microwave and Telecommunication Technology |
Abbreviated Journal |
Proc. 16th Int. Crimean Microwave and Telecommunication Technology |
Volume |
2 |
Issue |
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Pages |
686-687 |
Keywords |
IR NbN HEB mixer, detector, GaAs substrate |
Abstract |
The developed directly lens coupled hot electron bolometer (HEB) mixer was based on 5 nm superconducting NbN deposited on GaAs substrate. The layout of the structure, including 30x20 mcm^2 active area coupled with a 50 Ohm coplanar line, was patterned by photolithography. The responsivity of the mixer was measured in a direct detection mode in the 25-64 THz frequency range. The noise performance of the mixer and the directivity of the receiver were investigated in a heterodyne mode. A 10.6 mum wavelength CW CO2 laser was utilized as a local oscillator. |
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Call Number |
4023440 |
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1297 |
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