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Author Shangina, E. L.; Smirnov, K. V.; Morozov, D. V.; Kovalyuk, V. V.; Gol’tsman, G. N.; Verevkin, A. A.; Toropov, A. I.
Title Frequency bandwidth and conversion loss of a semiconductor heterodyne receiver with phonon cooling of two-dimensional electrons Type Journal Article
Year 2010 Publication Semicond. Abbreviated Journal Semicond.
Volume 44 Issue 11 Pages 1427-1429
Keywords 2DEG, AlGaAs/GaAs heterostructures mixers
Abstract The temperature and concentration dependences of the frequency bandwidth of terahertz heterodyne AlGaAs/GaAs detectors based on hot electron phenomena with phonon cooling of two-dimensional electrons have been measured by submillimeter spectroscopy with a high time resolution. At a temperature of 4.2 K, the frequency bandwidth at a level of 3 dB (f 3 dB) is varied from 150 to 250 MHz with a change in the concentration n s according to the power law f 3dB ∝ n −0.5 s due to the dominant contribution of piezoelectric phonon scattering. The minimum conversion loss of the semiconductor heterodyne detector is obtained in structures with a high carrier mobility (μ > 3 × 105 cm2 V−1 s−1 at 4.2 K).
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ISSN 1063-7826 ISBN Medium
Area Expedition Conference
Notes Полоса и потери преобразования полупроводникового смесителя с фононным каналом охлаждения двумерных электронов Approved no
Call Number Serial 1216
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Author Shangina, E. L.; Smirnov, K. V.; Morozov, D. V.; Kovalyuk, V. V.; Gol’tsman, G. N.; Verevkin, A. A.; Toropov, A. I.
Title Concentration dependence of the intermediate frequency bandwidth of submillimeter heterodyne AlGaAs/GaAs nanostructures Type Journal Article
Year 2010 Publication Bull. Russ. Acad. Sci. Phys. Abbreviated Journal Bull. Russ. Acad. Sci. Phys.
Volume 74 Issue 1 Pages 100-102
Keywords 2DEG AlGaAs/GaAs heterostructures, THz heterodyne detectors, IF bandwidth
Abstract The concentration dependence of the intermediate frequency bandwidth of heterodyne AlGaAs/GaAs detectors with 2D electron gas is measured using submillimeter spectroscopy with high time resolution at T= 4.2 K. The intermediate frequency bandwidth f3dBfalls from 245 to 145 MHz with increasing concentration of 2D electrons n s = (1.6-6.6) × 10[su11] cm-2. The dependence f3dB ≈ n s – 0.04±is observed in the studied concentration range; this dependence is determined by electron scattering by the deformation potential of acoustic phonons and piezoelectric scattering.
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Series Volume Series Issue Edition
ISSN 1062-8738 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1217
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Author Divochiy, A.; Misiaszek, M.; Vakhtomin, Y.; Morozov, P.; Smirnov, K.; Zolotov, P.; Kolenderski, P.
Title Single photon detection system for visible and infrared spectrum range Type Journal Article
Year 2018 Publication Opt. Lett. Abbreviated Journal Opt. Lett.
Volume 43 Issue 24 Pages 6085-6088
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Abstract We demonstrate niobium nitride based superconducting single-photon detectors sensitive in the spectral range 452-2300 nm. The system performance was tested in a real-life experiment with correlated photons generated by means of spontaneous parametric downconversion, where one photon was in the visible range and the other was in the infrared range. We measured a signal to noise ratio as high as 4x10(4) in our detection setting. A photon detection efficiency as high as 64% at 1550 nm and 15% at 2300 nm was observed.
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Language English Summary Language Original Title
Series Editor Series Title (up) Abbreviated Series Title
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ISSN 0146-9592 ISBN Medium
Area Expedition Conference
Notes https://arxiv.org/abs/1807.04273 Approved no
Call Number Serial 1227
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Author Zolotov, P.; Divochiy, A.; Vakhtomin, Y.; Seleznev, V.; Morozov, P.; Smirnov, K.
Title Superconducting single-photon detectors made of ultra-thin VN films Type Conference Article
Year 2018 Publication KnE Energy Abbreviated Journal KnE Energy
Volume 3 Issue 3 Pages 83-89
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Abstract We optimized technology of thin VN films deposition in order to study VN-based superconducting single-photon detectors. Investigation of the main VN film parameters showed that this material has lower resistivity compared to commonly used NbN. Fabricated from obtained films devices showed 100% intrinsic detection efficiency at 900 nm, at the temperature of 1.7 K starting with the bias current of 0.7·I
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Notes Approved no
Call Number Serial 1230
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Author Smirnov, K.; Divochiy, A.; Vakhtomin, Y.; Morozov, P.; Zolotov, P.; Antipov, A.; Seleznev, V.
Title NbN single-photon detectors with saturated dependence of quantum efficiency Type Journal Article
Year 2018 Publication Supercond. Sci. Technol. Abbreviated Journal Supercond. Sci. Technol.
Volume 31 Issue 3 Pages 035011 (1 to 8)
Keywords NbN SSPD, SNSPD
Abstract The possibility of creating NbN superconducting single-photon detectors with saturated dependence of quantum efficiency (QE) versus normalized bias current was investigated. It was shown that the saturation increases for the detectors based on finer films with a lower value of Rs300/Rs20. The decreasing of Rs300/Rs20 was related to the increasing influence of quantum corrections to conductivity of superconductors and, in turn, to the decrease of the electron diffusion coefficient. The best samples have a constant value of system QE 94% at Ib/Ic ~ 0.8 and wavelength 1310 nm.
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ISSN 0953-2048 ISBN Medium
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Notes Approved no
Call Number Serial 1232
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