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Fedder, H.; Oesterwind, S.; Wick, M.; Olbrich, F.; Michler, P.; Veigel, T.; Berroth, M.; Schlagmüller, M. |
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Characterization of electro-optical devices with low jitter single photon detectors – towards an optical sampling oscilloscope beyond 100 GHz |
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Conference Article |
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2018 |
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ECOC |
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1-3 |
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SSPD, SNSPD, SPAD |
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We showcase an optical random sampling scope that exploits single photon counting and apply it to characterize optical transceivers. We study single photon detectors with a jitter down to 40 ps. The method can be extended beyond 100 GHz. |
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8535415 |
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1198 |
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Author |
Kuzin, Aleksei; Elmanov, Ilia; Kovalyuk, Vadim; An, Pavel; Goltsman, Gregory |
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Title |
Silicon nitride focusing grating coupler for input and output light of NV-centers |
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Conference Article |
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2020 |
Publication |
Proc. 32-nd EMSS |
Abbreviated Journal |
Proc. 32-nd EMSS |
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349-353 |
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NV-centers, focusing grating coupler |
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Here we presented the numerical results for the calculation of focusing grating coupler efficiency in the visible wavelength range. Using the finite element method, the optimal geometric parameters, including filling factor and grating period for a central wavelength of 637 nm, were found. Obtained results allow to input/output single-photon radiation from NV-centers, and can be used for research and development of a scalable on-chip quantum optical computing. |
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2724-0029 |
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978-88-85741-44-7 |
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32nd European Modeling & Simulation Symposium |
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1841 |
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Shangina, E. L.; Smirnov, K. V.; Morozov, D. V.; Kovalyuk, V. V.; Gol’tsman, G. N.; Verevkin, A. A.; Toropov, A. I. |
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Frequency bandwidth and conversion loss of a semiconductor heterodyne receiver with phonon cooling of two-dimensional electrons |
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2010 |
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Semicond. |
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Semicond. |
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44 |
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11 |
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1427-1429 |
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2DEG, AlGaAs/GaAs heterostructures mixers |
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The temperature and concentration dependences of the frequency bandwidth of terahertz heterodyne AlGaAs/GaAs detectors based on hot electron phenomena with phonon cooling of two-dimensional electrons have been measured by submillimeter spectroscopy with a high time resolution. At a temperature of 4.2 K, the frequency bandwidth at a level of 3 dB (f 3 dB) is varied from 150 to 250 MHz with a change in the concentration n s according to the power law f 3dB ∝ n −0.5 s due to the dominant contribution of piezoelectric phonon scattering. The minimum conversion loss of the semiconductor heterodyne detector is obtained in structures with a high carrier mobility (μ > 3 × 105 cm2 V−1 s−1 at 4.2 K). |
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1063-7826 |
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Полоса и потери преобразования полупроводникового смесителя с фононным каналом охлаждения двумерных электронов |
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1216 |
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Shangina, E. L.; Smirnov, K. V.; Morozov, D. V.; Kovalyuk, V. V.; Gol’tsman, G. N.; Verevkin, A. A.; Toropov, A. I. |
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Concentration dependence of the intermediate frequency bandwidth of submillimeter heterodyne AlGaAs/GaAs nanostructures |
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Journal Article |
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2010 |
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Bull. Russ. Acad. Sci. Phys. |
Abbreviated Journal |
Bull. Russ. Acad. Sci. Phys. |
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74 |
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1 |
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100-102 |
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2DEG AlGaAs/GaAs heterostructures, THz heterodyne detectors, IF bandwidth |
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The concentration dependence of the intermediate frequency bandwidth of heterodyne AlGaAs/GaAs detectors with 2D electron gas is measured using submillimeter spectroscopy with high time resolution at T= 4.2 K. The intermediate frequency bandwidth f3dBfalls from 245 to 145 MHz with increasing concentration of 2D electrons n s = (1.6-6.6) × 10[su11] cm-2. The dependence f3dB ≈ n s – 0.04±is observed in the studied concentration range; this dependence is determined by electron scattering by the deformation potential of acoustic phonons and piezoelectric scattering. |
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1062-8738 |
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1217 |
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Moshkova, M.; Morozov, P.; Divochiy, A.; Vakhtomin, Y.; Smirnov, K. |
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Title |
Large active area superconducting single photon detector |
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Conference Article |
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Year |
2019 |
Publication |
J. Phys.: Conf. Ser. |
Abbreviated Journal |
J. Phys.: Conf. Ser. |
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1410 |
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012139 |
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SSPD, SNSPD |
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We present development of large active area superconducting single-photon detectors well coupled with standard 50 μm-core multi-mode fiber. The sensitive area of the SSPD is patterned using the photon-number-resolving design and occupies an area of 40×40 μm2. Using this approach, we have obtained excellent specifications: system detection efficiency of 47% measured using a 900 nm laser and low dark count rate of 100 cps. The main advantages of the approach presented are a very short dead time of the detector of 22 ns and FWHM jitter value of about 130 ps. |
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1742-6588 |
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1224 |
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