| Records |
| Author |
Gayduchenko, I.; Xu, S. G.; Alymov, G.; Moskotin, M.; Tretyakov, I.; Taniguchi, T.; Watanabe, K.; Goltsman, G.; Geim, A. K.; Fedorov, G.; Svintsov, D.; Bandurin, D. A. |
Title  |
Tunnel field-effect transistors for sensitive terahertz detection |
Type |
Journal Article |
| Year |
2021 |
Publication |
Nat. Commun. |
Abbreviated Journal |
Nat. Commun. |
| Volume |
12 |
Issue |
1 |
Pages |
543 |
| Keywords |
field-effect transistors, bilayer graphene, BLG |
| Abstract |
The rectification of electromagnetic waves to direct currents is a crucial process for energy harvesting, beyond-5G wireless communications, ultra-fast science, and observational astronomy. As the radiation frequency is raised to the sub-terahertz (THz) domain, ac-to-dc conversion by conventional electronics becomes challenging and requires alternative rectification protocols. Here, we address this challenge by tunnel field-effect transistors made of bilayer graphene (BLG). Taking advantage of BLG's electrically tunable band structure, we create a lateral tunnel junction and couple it to an antenna exposed to THz radiation. The incoming radiation is then down-converted by the tunnel junction nonlinearity, resulting in high responsivity (>4 kV/W) and low-noise (0.2 pW/[Formula: see text]) detection. We demonstrate how switching from intraband Ohmic to interband tunneling regime can raise detectors' responsivity by few orders of magnitude, in agreement with the developed theory. Our work demonstrates a potential application of tunnel transistors for THz detection and reveals BLG as a promising platform therefor. |
| Address |
Department of Physics, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA. bandurin@mit.edu |
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English |
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2041-1723 |
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PMID:33483488; PMCID:PMC7822863 |
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no |
| Call Number |
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Serial |
1261 |
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| Author |
Shurakov, A.; Mikhalev, P.; Mikhailov, D.; Mityashkin, V.; Tretyakov, I.; Kardakova, A.; Belikov, I.; Kaurova, N.; Voronov, B.; Vasil’evskii, I.; Gol’tsman, G. |
| Title |
Ti/Au/n-GaAs planar Schottky diode with a moderately Si-doped matching sublayer |
Type |
Journal Article |
| Year |
2018 |
Publication |
Microelectronic Engineering |
Abbreviated Journal |
Microelectronic Engineering |
| Volume |
195 |
Issue |
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Pages |
26-31 |
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| Abstract |
In this paper, we report on the results of the study of the Ti/Au/n-GaAs planar Schottky diodes (PSD) intended for the wideband detection of terahertz radiation. The two types of the PSD devices were compared having either the dual n/n+ silicon dopant profile or the triple one with a moderately doped matching sublayer inserted. All the diodes demonstrated no noticeable temperature dependence of ideality factors and barrier heights, whose values covered the ranges of 1.15–1.50 and 0.75–0.85 eV, respectively. We observed the lowering of the flat band barrier height of ∼80 meV after introducing the matching sublayer into the GaAs sandwich. For both the devices types, the series resistance value as low as 20 Ω was obtained. To extract the total parasitic capacitance, we performed the Y-parameters analysis within the electromagnetic modeling of the PSD's behavior via the finite-element method. The capacitance values of 12–12.2 fF were obtained and further verified by measuring the diodes' response voltages in the frequency range of 400–480 GHz. We also calculated the AC current density distribution within the layered structures similar to those being experimentally studied. It was demonstrated that insertion of the moderately Si-doped matching sublayer might be beneficial for implementation of a PSD intended for the operation within the ‘super-THz’ frequency range. |
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0167-9317 |
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no |
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Serial |
1155 |
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| Author |
Seliverstov, S. V.; Anfertyev, V. A.; Tretyakov, I. V.; Ozheredov, I. A.; Solyankin, P. M.; Revin, L. S.; Vaks, V. L.; Rusova, A. A.; Goltsman, G. N.; Shkurinov, A. P. |
| Title |
Terahertz heterodyne receiver with an electron-heating mixer and a heterodyne based on the quantum-cascade laser |
Type |
Journal Article |
| Year |
2017 |
Publication |
Radiophys. Quant. Electron. |
Abbreviated Journal |
Radiophys. Quant. Electron. |
| Volume |
60 |
Issue |
7 |
Pages |
518-524 |
| Keywords |
NbN HEB mixer, QCL |
| Abstract |
We study characteristics of the laboratory prototype of a terahertz heterodyne receiver with an electron-heating mixer and a heterodyne based on the quantum-cascade laser. The results obtained demonstrate the possibility to use this receiver as a basis for creation of a high-sensitivity terahertz spectrometer, which can be used in many basic and practical applications. A significant advantage of this receiver will be the possibility of placing the mixer and heterodyne in the same cryostat, which will reduce the device dimensions considerably. The obtained experimental results are analyzed, and methods of optimizing the parameters of the receiver are proposed. |
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Edition |
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| ISSN |
0033-8443 |
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no |
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Serial |
1322 |
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| Author |
Tretyakov, I.; Kaurova, N.; Raybchun, S.; Goltsman, G. N.; Silaev, A. A. |
| Title |
Technology for NbN HEB based multipixel matrix of THz range |
Type |
Conference Article |
| Year |
2018 |
Publication |
EPJ Web Conf. |
Abbreviated Journal |
EPJ Web Conf. |
| Volume |
195 |
Issue |
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Pages |
05011 |
| Keywords |
NbN HEB |
| Abstract |
The influence of homogeneity disorder degree of the thin superconducting NbN film across of Si wafer on characteristics of the Hot Electron Bolometers (HEB) has been investigated. Our experiments have been carried out near the superconducting transition and far below it. The high homogeneity disorder degree of the NbN film has been achieved by preparing the Si substrate surface. The fabricated HEBs all have almost identical R (T) characteristics with a dispersion of Tc and the normal resistance R300 of not more than 0.15K and 2 Ω, respectively. The quality of the devises allows us to demonstrate clearly the influence of non-equilibrium processes in the S’SS’ system on the device performance. Our fabrication technology also allows creating multiplex heterodyne and direct detector matrices based the HEB devices. |
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2100-014X |
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no |
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1318 |
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Korneev, A.; Finkel, M.; Maslennikov, S.; Korneeva, Yu.; Florya, I.; Tarkhov, M.; Elezov, M.; Ryabchun, S.; Tretyakov, I.; Isupova, A.; Voronov, B.; Goltsman, G. |
| Title |
Superconducting NbN terahertz detectors and infrared photon counters |
Type |
Journal Article |
| Year |
2010 |
Publication |
Вестник НГУ. Серия: физ. |
Abbreviated Journal |
Вестник НГУ. Серия: физ. |
| Volume |
5 |
Issue |
4 |
Pages |
68-72 |
| Keywords |
HEB; HEB mixer |
| Abstract |
We present our recent achievements in the development of sensitive and ultrafast thin-film superconducting sensors: hot-electron bolometers (HEB), HEB-mixers for terahertz range and infrared single-photon counters. These sensors have already demonstrated a performance that makes them devices-of-choice for many terahertz and optical applications. Keywords: Hot electron bolometer mixers, infrared single-photon detectors, superconducting device fabrication, superconducting NbN films. |
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1818-7994 |
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| Notes |
УДК 538.9 |
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no |
| Call Number |
RPLAB @ gujma @ |
Serial |
708 |
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Goltsman, G. N.; Korneev, A. A.; Finkel, M. I.; Divochiy, A. V.; Florya, I. N.; Korneeva, Y. P.; Tarkhov, M. A.; Ryabchun, S. A.; Tretyakov, I. V.; Maslennikov, S. N.; Kaurova, N. S.; Chulkova, G. M.; Voronov, B. M. |
| Title |
Superconducting hot-electron bolometer as THz mixer, direct detector and IR single-photon counter |
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Abstract |
| Year |
2010 |
Publication |
35th Int. Conf. Infrared, Millimeter, and Terahertz Waves |
Abbreviated Journal |
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Issue |
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Pages |
1-1 |
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SSPD, SNSPD, HEB |
| Abstract |
We present a new generation of superconducting single-photon detectors (SSPDs) and hot-electron superconducting sensors with record characteristic for many terahertz and optical applications. |
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Edition |
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| ISSN |
2162-2027 |
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no |
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RPLAB @ sasha @ goltsman2010superconducting |
Serial |
1028 |
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Tretyakov, I.; Shurakov, A.; Perepelitsa, A.; Kaurova, N.; Svyatodukh, S.; Zilberley, T.; Ryabchun, S.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G. |
| Title |
Silicon room temperature IR detectors coated with Ag2S quantum dots |
Type |
Conference Article |
| Year |
2019 |
Publication |
Proc. IWQO |
Abbreviated Journal |
Proc. IWQO |
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Issue |
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Pages |
369-371 |
| Keywords |
silicon detector, quantum dot, IR, surface states |
| Abstract |
For decades silicon has been the chief technological semiconducting material of modern microelectronics. Application of silicon detectors in optoelectronic devices are limited to the visible and near infrared ranges, due to their transparency for radiation with a wavelength higher than 1.1 μm. The expansion Si absorption towards longer wave lengths is a considerable interest to optoelectronic applications. In this work we present an elegant and effective solution to this problem using Ag2S quantum dots, creating impurity states in Si to cause sub-band gap photon absorption. The sensitivity of room temperature zero-bias Si_Ag2S detectors, which we obtained is 1011 cmHzW . Given the variety of QDs parameters such as: material, dimensions, our results open a path towards the future study and development of Si detectors for technological applications. |
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ISBN |
978-5-89513-451-1 |
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no |
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Serial |
1154 |
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Tretyakov, I. V.; Anfertyev, V. A.; Revin, L. S.; Kaurova, N. S.; Voronov, B. M.; Vaks, V. L.; Goltsman, G. N. |
| Title |
Sensitivity and resolution of a heterodyne receiver based on the NbN HEB mixer with a quantum-cascade laser as a local oscillator |
Type |
Journal Article |
| Year |
2018 |
Publication |
Radiophys. Quant. Electron. |
Abbreviated Journal |
Radiophys. Quant. Electron. |
| Volume |
60 |
Issue |
12 |
Pages |
988-992 |
| Keywords |
NbN HEB mixer |
| Abstract |
We present the results of experimental studies of the basic characteristics and operation features of a terahertz heterodyne detector based on the superconducting NbN HEB mixer and a quantum cascade laser as a local oscillator operating at a frequency of 2.02 THz. The measured noise temperature of such a mixer amounted to 1500 K. The spectral resolution of the detector is determined by the width of the local-oscillator spectral line whose measured value does not exceed 1 MHz. The quantum-cascade laser could be linearly tuned with respect to frequency with the coefficient 7.2 MHz/mA within the limits of the current oscillation bandwidth. |
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0033-8443 |
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no |
| Call Number |
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Serial |
1307 |
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Tretyakov, I.; Shurakov, A.; Perepelitsa, A.; Kaurova, N.; Svyatodukh, S.; Zilberley, T.; Ryabchun, S.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G. |
| Title |
Room temperature silicon detector for IR range coated with Ag2S quantum dots |
Type |
Journal Article |
| Year |
2019 |
Publication |
Phys. Status Solidi RRL |
Abbreviated Journal |
Phys. Status Solidi RRL |
| Volume |
13 |
Issue |
9 |
Pages |
1900187-(1-6) |
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| Abstract |
For decades, silicon has been the chief technological semiconducting material of modern microelectronics and has a strong influence on all aspects of the society. Applications of Si-based optoelectronic devices are limited to the visible and near infrared (IR) ranges. For photons with an energy less than 1.12 eV, silicon is almost transparent. The expansion of the Si absorption to shorter wavelengths of the IR range is of considerable interest for optoelectronic applications. By creating impurity states in Si, it is possible to cause sub-bandgap photon absorption. Herein, an elegant and effective technology of extending the photo-response of Si toward the IR range is presented. This approach is based on the use of Ag 2 S quantum dots (QDs) planted on the surface of Si to create impurity states in the Si bandgap. The specific sensitivity of the room temperature zero-bias Si_Ag 2 Sp detector is 10 11 cm Hz W 1 at 1.55 μm. Given the variety of available QDs and the ease of extending the photo-response of Si toward the IR range, these findings open a path toward future studies and development of Si detectors for technological applications. The current research at the interface of physics and chemistry is also of fundamental importance to the development of Si optoelectronics. |
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1862-6254 |
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no |
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Serial |
1149 |
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Tretyakov, I.; Svyatodukh, S.; Chumakova, A.; Perepelitsa, A.; Kaurova, N.; Shurakov, A.; Zilberley, T.; Ryabchun, S.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G. |
| Title |
Room temperature silicon detector for IR range coated with Ag2S quantum dots |
Type |
Conference Article |
| Year |
2019 |
Publication |
IRMMW-THz |
Abbreviated Journal |
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Issue |
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Pages |
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Ag2S quantum dots |
| Abstract |
A silicon has been the chief technological semiconducting material of modern microelectronics and has had a strong influence on all aspects of society. Applications of Si-based optoelectronic devices are limited to the visible and near infrared ranges. The expansion of the Si absorption to shorter wavelengths of the infrared range is of considerable interest to optoelectronic applications. By creating impurity states in Si it is possible to cause sub-band gap photon absorption. Here, we present an elegant and effective technology of extending the photoresponse of towards the IR range. Our approach is based on the use of Ag 2 S quantum dots (QDs) planted on the surface of Si. The specific sensitivity of the Ag 2 S/Si heterostructure is 10 11 cm√HzW -1 at 1.55μm. Our findings open a path towards the future study and development of Si detectors for technological applications. |
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2162-2035 |
ISBN |
978-1-5386-8285-2 |
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no |
| Call Number |
8874267 |
Serial |
1286 |
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| Author |
Bandurin, D. A.; Svintsov, D.; Gayduchenko, I.; Xu, S. G.; Principi, A.; Moskotin, M.; Tretyakov, I.; Yagodkin, D.; Zhukov, S.; Taniguchi, T.; Watanabe, K.; Grigorieva, I. V.; Polini, M.; Goltsman, G. N.; Geim, A. K.; Fedorov, G. |
| Title |
Resonant terahertz detection using graphene plasmons |
Type |
Journal Article |
| Year |
2018 |
Publication |
Nat. Commun. |
Abbreviated Journal |
Nat. Commun. |
| Volume |
9 |
Issue |
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Pages |
5392 (1 to 8) |
| Keywords |
THz, graphene plasmons |
| Abstract |
Plasmons, collective oscillations of electron systems, can efficiently couple light and electric current, and thus can be used to create sub-wavelength photodetectors, radiation mixers, and on-chip spectrometers. Despite considerable effort, it has proven challenging to implement plasmonic devices operating at terahertz frequencies. The material capable to meet this challenge is graphene as it supports long-lived electrically tunable plasmons. Here we demonstrate plasmon-assisted resonant detection of terahertz radiation by antenna-coupled graphene transistors that act as both plasmonic Fabry-Perot cavities and rectifying elements. By varying the plasmon velocity using gate voltage, we tune our detectors between multiple resonant modes and exploit this functionality to measure plasmon wavelength and lifetime in bilayer graphene as well as to probe collective modes in its moire minibands. Our devices offer a convenient tool for further plasmonic research that is often exceedingly difficult under non-ambient conditions (e.g. cryogenic temperatures) and promise a viable route for various photonic applications. |
| Address |
Physics Department, Moscow State University of Education (MSPU), Moscow, Russian Federation, 119435. fedorov.ge@mipt.ru |
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2041-1723 |
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no |
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1148 |
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Semenov, A.; Richter, H.; Hübers, H.-W.; Petrenko, D.; Tretyakov, I.; Ryabchun, S.; Finkel, M.; Kaurova, N.; Gol’tsman, G.; Risacher, C.; Ricken, O.; Güsten, R. |
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Optimization of the intermediate frequency bandwidth in the THz HEB mixers |
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Abstract |
| Year |
2014 |
Publication |
Proc. 25th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 25th Int. Symp. Space Terahertz Technol. |
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54 |
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NbN HEB mixer |
| Abstract |
We report on the studies of the intermediate frequency (IF) bandwidth of quasi-optically coupled NbN hot-electron bolometer (HEB) mixers which are aimed at the optimization of the mixer performance at terahertz frequencies. Extension of the IF bandwidth due to the contribution of electron diffusion to the heat removal from NbN microbolometers has been already demonstrated for NbN HEBs at subterahertz frequencies. However, reducing the size of the microbolometer causes degradation of the noise temperature. Using in-situ multilayer manufacturing process we succeeded to improve the transparency of the contacts for electrons which go away from microbolometer to the metallic antenna. The improved transparency and hence coupling efficiency counterbalances the noise temperature degradation. HEB mixers were tested in a laboratory heterodyne receiver with a narrow-band cold filter which allowed us to eliminate direct detection. We used a local oscillator with a quantum cascade laser (QCL) at a frequency of 4.745 THz [1] which was developed for the H-Channel of the German Receiver for Astronomy at Terahertz frequencies (GREAT). Both the noise and gain bandwidth were measured in the IF range from 0.5 to 8 GHz using the hot-cold technique and preliminary calibrated IF analyzer with a tunable microwave filter. For optimized HEB geometry we found the noise bandwidth as large as 7 GHz. We compare our results with the conventional and the hot-spot mixer models and show that further extension of the IF bandwidth should be possible via improving the sharpness of the superconducting transition. The cross characterization of the HEB mixer was performed in the test bed of GREAT at the Max-Planck-Institut für Radioastronomie with the same QCL LO and delivered results which were consistent with the laboratory studies. |
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no |
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1359 |
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Shcherbatenko, M.; Tretyakov, I.; Lobanov, Yu.; Maslennikov, S. N.; Kaurova, N.; Finkel, M.; Voronov, B.; Goltsman, G.; Klapwijk, T. M. |
| Title |
Nonequilibrium interpretation of DC properties of NbN superconducting hot electron bolometers |
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Journal Article |
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2016 |
Publication |
Appl. Phys. Lett. |
Abbreviated Journal |
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| Volume |
109 |
Issue |
13 |
Pages |
132602 |
| Keywords |
HEB mixer, contacts |
| Abstract |
We present a physically consistent interpretation of the dc electrical properties of niobiumnitride (NbN)-based superconducting hot-electron bolometer mixers, using concepts of nonequilibrium superconductivity. Through this, we clarify what physical information can be extracted from the resistive transition and the dc current-voltage characteristics, measured at suitably chosen temperatures, and relevant for device characterization and optimization. We point out that the intrinsic spatial variation of the electronic properties of disordered superconductors, such as NbN, leads to a variation from device to device. |
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no |
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1107 |
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| Author |
Ryabchun, S. A.; Tretyakov, I. V.; Finkel, M. I.; Maslennikov, S. N.; Kaurova, N. S.; Seleznev, V. A.; Voronov, B. M.; Gol'tsman, G. N. |
| Title |
NbN phonon-cooled hot-electron bolometer mixer with additional diffusion cooling |
Type |
Conference Article |
| Year |
2009 |
Publication |
Proc. 20th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 20th ISSTT |
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Pages |
151-154 |
| Keywords |
HEB, mixer, bandwidth, noise temperatue, in-situ contacts, in situ contacts |
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Place of Publication |
Charlottesville, USA |
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no |
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Serial |
590 |
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| Author |
Tretyakov, I. V.; Ryabchun, S. A.; Maslennikov, S. N.; Finkel, M. I.; Kaurova, N. S.; Seleznev, V. A.; Voronov, B. M.; Gol'tsman, G.N. |
| Title |
NbN HEB mixer: fabrication, noise temperature reduction and characterization |
Type |
Conference Article |
| Year |
2008 |
Publication |
Proc. Basic problems of superconductivity |
Abbreviated Journal |
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| Volume |
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Issue |
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Pages |
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| Keywords |
HEB, mixer, noise temperature, conversion gain bandwidth |
| Abstract |
We demonstrate that in the terahertz region superconducting hot-electron mixers offer the lowest noise temperature, opening the possibility of using HTS's in the future to fabricate these devices. Specifically, a noise temperature of 950 K was measured for the receiver operating at 2.5 THz with a NbN HEB mixer, and a gain bandwidth of 6 GHz was measured at 300 GHz near Tc for the same mixer. |
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Place of Publication |
Moscow-Zvenigorod |
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no |
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Serial |
591 |
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