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Finkel, M. I., Maslennikov, S. N., & Gol'tsman, G. N. (2005). Terahertz heterodyne receivers based on superconductive hot-electron bolometer mixers. Radiophys. Quant. Electron., 48(10-11), 859–864.
Abstract: We consider recent results in development of hot-electron bolometer mixers. Special attention is paid to optimization of the contacts between the antenna and the active area of a superconducting film. An important result in the study of the parasitic effect of direct detection is obtained during the measurement of the noise temperatures by the hot/cold load method. The latest results of studies of the waveguide hot-electron bolometer mixers and their successful practical applications are considered. Progress in development of high-frequency (over 1.3 THz) heterodyne receivers for several important international projects is discussed and new submillimeter radio astronomy projects ESPRIT and SAFIR are described.
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Seliverstov, S. V., Anfertyev, V. A., Tretyakov, I. V., Ozheredov, I. A., Solyankin, P. M., Revin, L. S., et al. (2017). Terahertz heterodyne receiver with an electron-heating mixer and a heterodyne based on the quantum-cascade laser. Radiophys. Quant. Electron., 60(7), 518–524.
Abstract: We study characteristics of the laboratory prototype of a terahertz heterodyne receiver with an electron-heating mixer and a heterodyne based on the quantum-cascade laser. The results obtained demonstrate the possibility to use this receiver as a basis for creation of a high-sensitivity terahertz spectrometer, which can be used in many basic and practical applications. A significant advantage of this receiver will be the possibility of placing the mixer and heterodyne in the same cryostat, which will reduce the device dimensions considerably. The obtained experimental results are analyzed, and methods of optimizing the parameters of the receiver are proposed.
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Rasulova, G. K., Pentin, I. V., & Goltsman, G. N. (2019). Terahertz emission from a weakly-coupled GaAs/AlGaAs superlattice biased into three different modes of current self-oscillations. AIP Advances, 9(10), 105220.
Abstract: Radio-frequency modulated terahertz (THz) emission power from weakly-coupled GaAs/AlGaAs superlattice (SL) has been increased by parallel connection of several SL mesas. Each SL mesa is a self-oscillator with its own oscillation frequency and mode. In coupled non-identical SL mesas biased at different voltages within the hysteresis loop the chaotic, quasiperiodic and frequency-locked modes of self-oscillations of current arise. THz emission was detected when three connected in parallel SL mesas were biased into the frequency-locked and quasiperiodic modes of self-oscillations of current, while in the chaotic mode of those it falls to the noise level.
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Ryabchun, S., Tong, C. - Y. E., Paine, S., Lobanov, Y., Blundell, R., & Goltsman, G. (2009). Temperature resolution of an HEB receiver at 810 GHz. IEEE Trans. Appl. Supercond., 19(3), 293–296.
Abstract: We present the results of direct measurements of the temperature resolution of an HEB receiver operating at 810 GHz, in both continuum and spectroscopic modes. In the continuum mode, the input of the receiver was switched between black bodies with different physical temperatures. With a system noise temperature of around 1100 K, the receiver was able to resolve loads which differed in temperature by about 1 K over an integration time of 5 seconds. This resolution is significantly worse than the value of 0.07 K given by the radiometer equation. In the spectroscopic mode, a gas cell filled with carbonyl sulphide (OCS) gas was used and the emission line at 813.3537060 GHz was measured using the receiver in conjunction with a digital spectrometer. From the observed spectra, we determined that the measurement uncertainty of the equivalent emission temperature was 2.8 K for an integration time of 0.25 seconds and a spectral resolution of 12 MHz, compared to a 1.4 K temperature resolution given by the radiometer equation. This relative improvement is due to the fact that at short integration times the contribution from 1/f noise and drift are less dominant. In both modes, the temperature resolution was improved by about 40% with the use of a feedback loop which adjusted the level of an injected microwave radiation to maintain a constant operating current of the HEB mixer. This stabilization scheme has proved to be very effective to keep the temperature resolution of the HEB receiver to close to the theoretical value given by the radiometer equation.
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Zhang, W., Miao, W., Zhong, J. Q., Shi, S. C., Hayton, D. J., Vercruyssen, N., et al. (2014). Temperature dependence of the receiver noise temperature and IF bandwidth of superconducting hot electron bolometer mixers. Supercond. Sci. Technol., 27(8), 085013 (1 to 5).
Abstract: In this paper we study the temperature dependence of the receiver noise temperature and IF noise bandwidth of superconducting hot electron bolometer (HEB) mixers. Three superconducting NbN HEB devices of different transition temperatures (Tc) are measured at 0.85 THz and 1.4 THz at different bath temperatures (Tbath) between 4 K and 9 K. Measurement results demonstrate that the receiver noise temperature of superconducting NbN HEB devices is nearly constant for Tbath/Tc, less than 0.8, which is consistent with the simulation based on a distributed hot-spot model. In addition, the IF noise bandwidth appears independent of Tbath/Tc, indicating the dominance of phonon cooling in the investigated HEB devices.
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Zolotov, P. I., Vakhtomin, Y. B., Divochiy, A. V., Seleznev, V. A., & Smirnov, K. V. (2016). Technology development of resonator-based structures for efficiency increasing of NBN detectors of IR single photons. Proc. 5th Int. Conf. Photonics and Information Optics, , 115–116.
Abstract: This paper presents a technology of fabrication of NbN superconductive single- photon detectors, using resonator structures. The main results are related to optimization of the process of NbN sputtering over substrate with metallic mirrors and SiO 2 /Si 3 N 4 layers /4 thick. Investigation of the quantum efficiency of fabricated devices at 1.6 K on 1.55 μm showed triple-magnified value compared to standard Si/NbN structures.
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Arutyunov, K. Y., Ramos-Alvarez, A., Semenov, A. V., Korneeva, Y. P., An, P. P., Korneev, A. A., et al. (2016). Superconductivity in highly disordered NbN nanowires. Nanotechnol., 27(47), 47lt02 (1 to 8).
Abstract: The topic of superconductivity in strongly disordered materials has attracted significant attention. These materials appear to be rather promising for fabrication of various nanoscale devices such as bolometers and transition edge sensors of electromagnetic radiation. The vividly debated subject of intrinsic spatial inhomogeneity responsible for the non-Bardeen-Cooper-Schrieffer relation between the superconducting gap and the pairing potential is crucial both for understanding the fundamental issues of superconductivity in highly disordered superconductors, and for the operation of corresponding nanoelectronic devices. Here we report an experimental study of the electron transport properties of narrow NbN nanowires with effective cross sections of the order of the debated inhomogeneity scales. The temperature dependence of the critical current follows the textbook Ginzburg-Landau prediction for the quasi-one-dimensional superconducting channel I c approximately (1-T/T c)(3/2). We find that conventional models based on the the phase slip mechanism provide reasonable fits for the shape of R(T) transitions. Better agreement with R(T) data can be achieved assuming the existence of short 'weak links' with slightly reduced local critical temperature T c. Hence, one may conclude that an 'exotic' intrinsic electronic inhomogeneity either does not exist in our structures, or, if it does exist, it does not affect their resistive state properties, or does not provide any specific impact distinguishable from conventional weak links.
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Ptitsina N. G., Chulkova G. M., Il'in K. S., Sergeev A. V., Pochinkov F. S., & Gershenzon E. M. (1997). Superconductivity has been found in a number of new compounds between the non-superconducting transition elements and nonmetals such as Si, Ge, and Te. These findings have suggested possible criteria for superconductivity in both elements and compounds. Phys. Rev. B, 56(16).
Abstract: The temperature dependence of the resistance of films of Al, Be, and NbC with small values of the electron mean free path L=1.5– 10 nm has been measured at 4.2–300 K. The resistance of all the films contains a T^2 contribution that is proportional to the residual resistance; this contribution has been attributed to the interference between the elastic electron scattering and the electron-phonon scattering. Fitting the data to the theory of the electron-phonon-impurity interference „M. Yu. Reiser and A. V. Sergeev, Zh. Eksp. Teor. Fiz. 92, 224 ~1987! @Sov. Phys. JETP 65, 1291 ~1987!#…, we obtain constants of nteraction of the electrons with transverse phonons, and estimate the contribution of this interaction to the electron dephasing rate in thin films of Au, Al, Be, Nb, and NbC. Our estimates are in a good agreement with the experimental data on the inelastic electronphonon scattering in these films. This indicates that the interaction of electrons with transverse phonons controls the electron-phonon relaxation rate in thin-metal films over a broad temperature range.
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Saveskul, N. A., Titova, N. A., Baeva, E. M., Semenov, A. V., Lubenchenko, A. V., Saha, S., et al. (2019). Superconductivity behavior in epitaxial TiN films points to surface magnetic disorder. Phys. Rev. Applied, 12(5), 054001.
Abstract: We analyze the evolution of the normal and superconducting properties of epitaxial TiN films, characterized by high Ioffe-Regel parameter values, as a function of the film thickness. As the film thickness decreases, we observe an increase of the residual resistivity, that becomes dominated by diffusive surface scattering for d≤20nm. At the same time, a substantial thickness-dependent reduction of the superconducting critical temperature is observed compared to the bulk TiN value. In such high-quality material films, this effect can be explained by a weak magnetic disorder residing in the surface layer with a characteristic magnetic defect density of approximately 1012cm−2. Our results suggest that surface magnetic disorder is generally present in oxidized TiN films.
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Voronov, B. M., Gershenzon, E. M., Gol'tsman, G. N., Gubkina, T. O., & Semash, V. D. (1994). Superconductive properties of ultrathin NbN films on different substrates. Sverkhprovodimost': Fizika, Khimiya, Tekhnika, 7(6), 1097–1102.
Abstract: A study was made on dependence of surface resistance, critical temperature and width of superconducting transition on application temperature and thickness of NbN films, which varied within the range of 3-10 nm. Plates of sapphire, fused and monocrystalline quartz, MgO, as well as Si and silicon oxide were used as substrates. NbN films with 160 μθ·cm specific resistance and 16.5 K (Tc) critical temperature were obtained on sapphire substrates. Intensive growth of ΔTc was noted for films, applied on fused quartz, with increase of precipitation temperature. This is explained by occurrence of high tensile stresses in NbN films, caused by sufficient difference of thermal coefficients of expansion of NbN and quartz.
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