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Author Verevkin, A.; Zhang, J.; Sobolewski, Roman; Lipatov, A.; Okunev, O.; Chulkova, G.; Korneev, A.; Smirnov, K.; Gol'tsman, G. N.; Semenov, A.
Title (up) Detection efficiency of large-active-area NbN single-photon superconducting detectors in the ultraviolet to near-infrared range Type Journal Article
Year 2002 Publication Appl. Phys. Lett. Abbreviated Journal
Volume 80 Issue 25 Pages 4687-4689
Keywords NbN SSPD, SNSPD, QE
Abstract We report our studies on spectral sensitivity of meander-type, superconducting NbN thin-film single-photon detectors (SPDs), characterized by GHz counting rates of visible and near-infrared photons and negligible dark counts. Our SPDs exhibit experimentally determined quantum efficiencies ranging from ∼0.2% at the 1.55 μm wavelength to ∼70% at 0.4 μm. Spectral dependences of the detection efficiency (DE) at the 0.4 to 3.0-μm-wavelength range are presented. The exponential character of the DE dependence on wavelength, as well as its dependence versus bias current, is qualitatively explained in terms of superconducting fluctuations in our ultrathin, submicron-width superconducting stripes. The DE values of large-active-area NbN SPDs in the visible range are high enough for modern quantum communications.
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Notes Approved no
Call Number Serial 331
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Author Romanov, N. R.; Zolotov, P. I.; Smirnov, K. V.
Title (up) Development of disordered ultra-thin superconducting vanadium nitride films Type Conference Article
Year 2019 Publication Proc. 8th Int. Conf. Photonics and Information Optics Abbreviated Journal Proc. 8th Int. Conf. Photonics and Information Optics
Volume Issue Pages 425-426
Keywords VN films
Abstract We present the results of development and research of superconducting vanadium nitride VN films ~10 nm thick having different level of disorder. It is showed that both silicon substrate temperature T sub in process of magnetron sputtering and total gas pressure P affect superconducting transition temperature of sputtered films and R 300 /R 20 ratio defining their level of disorder. VN films suitable for development of superconducting single-photon detectors on their basis are obtained.
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Publisher Place of Publication Editor
Language Russian Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN 978-5-7262-2536-4 Medium
Area Expedition Conference
Notes http://fioconf.mephi.ru/files/2018/12/FIO2019-Sbornik.pdf Approved no
Call Number Serial 1802
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Author Zolotov, P.; Vakhtomin, Yu.; Divochiy, A.; Morozov, P.; Seleznev, V.; Smirnov, K
Title (up) Development of fast and high-effective single-photon detector for spectrum range up to 2.3 μm Type Conference Article
Year 2017 Publication Proc. SPBOPEN Abbreviated Journal Proc. SPBOPEN
Volume Issue Pages 439-440
Keywords SSPD, SNSPD
Abstract We present the results of development and testing of the single-photon-counting system operating in the wide spectrum rane up to 2.3 mcm. We managed to increase system detection efficiency up to 60% in the range of 1.7-2.3 mcm optimisation of the fabrication methods of superconducting single-photon detectors and application of the single-mode fiber with enlarged core diameter.
Address St. Petersburg, Russia
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Notes Approved no
Call Number Serial 1255
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Author Zolotov, P. I.; Divochiy, A. V.; Vakhtomin, Y. B.; Morozov, P. V.; Seleznev, V. A.; Smirnov, K. V.
Title (up) Development of high-effective superconducting single-photon detectors aimed for mid-IR spectrum range Type Conference Article
Year 2017 Publication J. Phys.: Conf. Ser. Abbreviated Journal J. Phys.: Conf. Ser.
Volume 917 Issue Pages 062037
Keywords NbN SSPD, SNSPD
Abstract We report on development of superconducting single-photon detectors (SSPD) with high intrinsic quantum efficiency in the wavelength range 1.31 – 3.3 μm. By optimization of the NbN film thickness and its compound, we managed to improve detection efficiency of the detectors in the range up to 3.3 μm. Optimized devices showed intrinsic quantum efficiencies as high as 10% at mid-IR range.
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Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1742-6588 ISBN Medium
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Notes Approved no
Call Number Serial 1233
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Author Semenov, A.; Richter, H.; Hübers, H.-W.; Smirnov, K.; Voronov, B.; Gol'tsman, G.
Title (up) Development of terahertz superconducting hot-electron bolometer mixers Type Conference Article
Year 2003 Publication Proc. 6th European Conf. Appl. Supercond. Abbreviated Journal Proc. 6th European Conf. Appl. Supercond.
Volume 181 Issue Pages 2960-2965
Keywords NbN HEB mixers
Abstract We present recent results of the development of phonon cooled hot-electron bolometric (HEB) mixers for airborne and balloon borne terahertz heterodyne receivers. Three iomportant issues have been addresses: the quality of NbN films the HEB mixers were made from, the spectral properties of the HEB mixers and the local oscillator power required for optical operation. Studies with an atomic force microscope indicate, that the performance of the HEB mixer might have been effected by the microstructure of the NbN film. Antenna gain and noise temperature were investigated at terahertz frequencies for a HEB embedded in either log-spiral or twin-slot feed antenna. Comparison suggests that at frequencies above 3 THz the spiral feed provides better overall performance. At 1.6 THz, a power of 2.5 µW was required from the local oscillator for optimal operation of the HEB mixer.
Address Sorrento, Italy
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ISSN ISBN 0750309814, 978-0750309813 Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1505
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Author Kitaeva, G. K.; Kornienko, V. V.; Kuznetsov, K. A.; Pentin, I. V.; Smirnov, K. V.; Vakhtomin, Y. B.
Title (up) Direct detection of the idler THz radiation generated by spontaneous parametric down-conversion Type Journal Article
Year 2019 Publication Opt. Lett. Abbreviated Journal Opt. Lett.
Volume 44 Issue 5 Pages 1198-1201
Keywords HEB applications
Abstract We study parametric down-conversion (PDC) of optical laser radiation in the strongly frequency non-degenerate regime which is promising for the generation of quantum-correlated pairs of extremely different spectral ranges, the optical and the terahertz (THz) ones. The possibility to detect tenuous THz-frequency photon fluxes generated under low-gain spontaneous PDC is demonstrated using a hot electron bolometer. Then experimental dependences of the THz radiation power on the detection angle and on the pump intensity are analyzed.
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Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0146-9592 ISBN Medium
Area Expedition Conference
Notes PMID:30821747 Approved no
Call Number Serial 1801
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Author Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Goltsman, G. N.; Gershenson, E. M.; Yngvesson, K. S.
Title (up) Direct measurements of electron energy relaxation times at an AlGaAs/GaAs heterointerface in the optical phonon scattering range Type Conference Article
Year 1997 Publication Proc. 4-th Int. Semicond. Device Research Symp. Abbreviated Journal Proc. 4-th Int. Semicond. Device Research Symp.
Volume Issue Pages 55-58
Keywords 2DEG, AlGaAs/GaAs heterostructures
Abstract
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Notes Approved no
Call Number Serial 1602
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Author Verevkin, A.; Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.; Chulkova, G. M.; Smirnov, K. S.; Sobolewski, R.
Title (up) Direct measurements of energy relaxation times in two-dimensional structures under quasi-equilibrium conditions Type Conference Article
Year 2002 Publication Mater. Sci. Forum Abbreviated Journal Mater. Sci. Forum
Volume 384-3 Issue Pages 107-116
Keywords 2DEG, AlGaAs/GaAs
Abstract A new microwave technique was successfully applied for direct studies of energy relaxation times in two-dimensional AlGaAs/GaAs structures under quasi-equilibrium conditions in the nanosecond and picosecond time scale. We report our results of energy relaxation time measurements in the temperature range 1.6-50 K, in quantum Hall effect regime in magnetic fields up to 4 T.
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Area Expedition Conference Materials Science Forum
Notes Approved no
Call Number Serial 1536
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Author Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Gol’tsman, G. N.; Gershenzon, E. M.; Ingvesson, K. S.
Title (up) Direct measurements of energy relaxation times on an AlGaAs/GaAs heterointerface in the range 4.2–50 K Type Journal Article
Year 1996 Publication JETP Lett. Abbreviated Journal JETP Lett.
Volume 64 Issue 5 Pages 404-409
Keywords 2DEG, AlGaAs/GaAs heterostructures
Abstract The temperature dependence of the energy relaxation time τe (T) of a two-dimensional electron gas at an AlGaAs/GaAs heterointerface is measured under quasiequilibrium conditions in the region of the transition from scattering by acoustic phonons to scattering with the participation of optical phonons. The temperature interval of constant τe, where scattering by the deformation potential predominates, is determined. In the preceding, low-temperature region, where piezoacoustic and deformation-potential-induced scattering processes coexist, τ e decreases slowly with increasing temperature. Optical phonons start to participate in the scattering processes at T∼25 K (the characteristic phonon lifetime was equal to τLOτ4.5 ps). The energy losses calculated from the τe data in a model with an effective nonequilibrium electron temperature agree with the published data obtained under strong heating conditions.
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Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0021-3640 ISBN Medium
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Notes http://jetpletters.ru/ps/981/article_14955.shtml (“Прямые измерения времен энергетической релаксации на гетерогранице AlGaAs/GaAs в диапазоне 4.2 – 50 К”) Approved no
Call Number Serial 1608
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Author Jukna, A.; Kitaygorsky, J.; Pan, D.; Cross, A.; Perlman, A.; Komissarov, I.; Sobolewski, R.; Okunev, O.; Smirnov, K.; Korneev, A.; Chulkova, G.; Milostnaya, I.; Voronov, B.; Gol'tsman, G.
Title (up) Dynamics of hotspot formation in nanostructured superconducting stripes excited with single photons Type Journal Article
Year 2008 Publication Acta Physica Polonica A Abbreviated Journal Acta Physica Polonica A
Volume 113 Issue 3 Pages 955-958
Keywords SSPD, SNSPD
Abstract Dynamics of a resistive hotspot formation by near-infrared-wavelength single photons in nanowire-type superconducting NbN stripes was investigated. Numerical simulations of ultrafast thermalization of photon-excited nonequilibrium quasiparticles, their multiplication and out-diffusion from a site of the photon absorption demonstrate that 1.55 μm wavelength photons create in an ultrathin, two-dimensional superconducting film a resistive hotspot with the diameter which depends on the photon energy, and the nanowire temperature and biasing conditions. Our hotspot model indicates that under the subcritical current bias of the 2D stripe, the electric field penetrates the superconductor at the hotspot boundary, leading to suppression of the stripe superconducting properties and accelerated development of a voltage transient across the stripe.
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Notes Approved no
Call Number Serial 1414
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Author Romanov, N. R.; Zolotov, P. I.; Vakhtomin, Y. B.; Divochiy, A. V.; Smirnov, K. V.
Title (up) Electron diffusivity measurements of VN superconducting single-photon detectors Type Conference Article
Year 2018 Publication J. Phys.: Conf. Ser. Abbreviated Journal J. Phys.: Conf. Ser.
Volume 1124 Issue Pages 051032
Keywords SSPD, SNSPD, VN
Abstract The research of ultrathin vanadium nitride (VN) films as a promising candidate for superconducting single-photon detectors (SSPD) is presented. The electron diffusivity measurements are performed for such devices. Devices that were fabricated out from 9.9 nm films had diffusivity coefficient of 0.41 cm2/s and from 5.4 nm – 0.54 cm2/s. Obtained values are similar to other typical SSPD materials. The diffusivity that increases along with decreasing of the film thickness is expected to allow fabrication of the devices with improved characteristics. Fabricated VN SSPDs showed prominent single-photon response in the range 0.9-1.55 µm.
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Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1742-6588 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1229
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Author Gol’tsman, G. N.; Smirnov, K. V.
Title (up) Electron-phonon interaction in a two-dimensional electron gas of semiconductor heterostructures at low temperatures Type Journal Article
Year 2001 Publication Jetp Lett. Abbreviated Journal Jetp Lett.
Volume 74 Issue 9 Pages 474-479
Keywords 2DEG, AlGaAs/GaAs heterostructures
Abstract Theoretical and experimental works devoted to studying electron-phonon interaction in the two-dimensional electron gas of semiconductor heterostructures at low temperatures in the case of strong heating in an electric field under quasi-equilibrium conditions and in a quantizing magnetic field perpendicular to the 2D layer are considered.
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ISSN 0021-3640 ISBN Medium
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Notes По итогам проектов российского фонда фундаментальных исследований. Проект РФФИ # 98-02-16897 Электрон-фононное взаимодействие в двумерном электронном газе полупроводниковых гетероструктур при низких температурах Approved no
Call Number Serial 1541
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Author Smirnov, K. V.; Ptitsina, N. G.; Vakhtomin, Y. B.; Verevkin, A. A.; Gol’tsman, G. N.; Gershenzon, E. M.
Title (up) Energy relaxation of two-dimensional electrons in the quantum Hall effect regime Type Journal Article
Year 2000 Publication JETP Lett. Abbreviated Journal JETP Lett.
Volume 71 Issue 1 Pages 31-34
Keywords 2DEG, GaAs/AlGaAs heterostructures
Abstract The mm-wave spectroscopy with high temporal resolution is used to measure the energy relaxation times τe of 2D electrons in GaAs/AlGaAs heterostructures in magnetic fields B=0–4 T under quasi-equilibrium conditions at T=4.2 K. With increasing B, a considerable increase in τe from 0.9 to 25 ns is observed. For high B and low values of the filling factor ν, the energy relaxation rate τ −1e oscillates. The depth of these oscillations and the positions of maxima depend on the filling factor ν. For ν>5, the relaxation rate τ −1e is maximum when the Fermi level lies in the region of the localized states between the Landau levels. For lower values of ν, the relaxation rate is maximum at half-integer values of τ −1e when the Fermi level is coincident with the Landau level. The characteristic features of the dependence τ −1e (B) are explained by different contributions of the intralevel and interlevel electron-phonon transitions to the process of the energy relaxation of 2D electrons.
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ISSN 0021-3640 ISBN Medium
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Notes http://jetpletters.ru/ps/899/article_13838.shtml (“Энергетическая релаксация двумерных электронов в области квантового эффекта Холла”) Approved no
Call Number Serial 1559
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Author Shcheslavskiy, V.; Morozov, P.; Divochiy, A.; Vakhtomin, Y.; Smirnov, K.; Becker, W.
Title (up) Erratum: “Ultrafast time measurements by time-correlated single photon counting coupled with superconducting single photon detector” [Rev. Sci. Instrum. 87, 053117 (2016)] Type Miscellaneous
Year 2016 Publication Rev. Sci. Instrum. Abbreviated Journal Rev. Sci. Instrum.
Volume 87 Issue 6 Pages 069901
Keywords SSPD, SNSPD, TCSPC, jitter
Abstract In the original paper1the Ref. 10 should be M. Sanzaro, N. Calandri, A. Ruggeri, C. Scarcella, G. Boso, M. Buttafava, and A. Tosi, Proc. SPIE9370, 93701T (2015).
Address Becker & Hickl GmbH, Nahmitzer Damm 30, Berlin 12277, Germany
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ISSN 0034-6748 ISBN Medium
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Notes PMID:27370512 Approved no
Call Number Serial 1810
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Author Zinoni, C.; Alloing, B.; Li, L. H.; Marsili, F.; Fiore, A.; Lunghi, L.; Gerardino, A.; Vakhtomin, Y. B.; Smirnov, K. V.; Gol’tsman, G. N.
Title (up) Erratum: “Single photon experiments at telecom wavelengths using nanowire superconducting detectors” [Appl. Phys. Lett. 91, 031106 (2007)] Type Journal Article
Year 2010 Publication Appl. Phys. Lett. Abbreviated Journal Appl. Phys. Lett.
Volume 96 Issue 8 Pages 089901
Keywords SSPD, SNSPD, erratum
Abstract A calculation error was made in the original publication of this letter. The error was in the calculation of the noise equivalent power (NEP) values for the avalanche photodiode detector (APD) and the superconducting single photon detector (SSPD), the incorrect values were plotted on the right axis in Fig. 1(b). The correct NEP values were calculated with the same equation reported in the original letter and the revised Fig. 1(b) is shown below. The other conclusions of the paper remain unaltered.
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ISSN 0003-6951 ISBN Medium
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Notes Approved no
Call Number Serial 1395
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