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Author | Zhang, W.; Jiang, L.; Lin, Z. H.; Yao, Q. J.; Li, J.; Shi, S. C.; Svechnikov, S. I.; Vachtomin, Yu. B.; Antipov, S. V.; Voronov, B. M.; Kaurova, N. S.; Gol'tsman, G. N. | ||||
Title | Development of a quasi-optical NbN superconducting HEB mixer | Type | Conference Article | ||
Year | 2005 | Publication | Proc. 16th Int. Symp. Space Terahertz Technol. | Abbreviated Journal | Proc. 16th Int. Symp. Space Terahertz Technol. |
Volume | Issue | Pages | 209-213 | ||
Keywords | NbN HEB mixers | ||||
Abstract | In this paper, we report the performance of a quasi-optical NbN superconducting HEB (hot electron bolometer) mixer measured at 500 and 850GHz. The quasi-optical NbN superconducting HEB mixer is cryogenically cooled by a 4-K close-cycled refrigerator. Measured receiver noise temperature at 850 and 500GHz are 3000K and 2500K respectively with wire grid as beamsplitter, while the lowest receiver noise temperature is found to be approximately 1200K with Mylar film. The theoretical receiver noise temperature (taking into account the elliptical polarization of log-spiral antenna) is consistent with measured one. The receiver noise temperature and conversion gain with 15-μm Mylar film as the beamsplitter at 500GHz are thoroughly investigated for different LO pumping levels and dc biases. The stability of the mixer’s IF output power is also demonstrated. | ||||
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Notes | Approved | no | |||
Call Number | Serial | 1470 | |||
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Author | Trifonov, A.; Tong, C.-Y. E.; Grimes, P.; Lobanov, Y.; Kaurova, N.; Blundell, R.; Goltsman, G. | ||||
Title | Development of A Silicon Membrane-based Multi-pixel Hot Electron Bolometer Receiver | Type | Conference Article | ||
Year | 2017 | Publication | IEEE Trans. Appl. Supercond. | Abbreviated Journal | IEEE Trans. Appl. Supercond. |
Volume | 27 | Issue | 4 | Pages | 6 |
Keywords | Multi-pixel, HEB, silicon-on-insulator, horn array | ||||
Abstract | We report on the development of a multi-pixel Hot Electron Bolometer (HEB) receiver fabricated using silicon membrane technology. The receiver comprises a 2 × 2 array of four HEB mixers, fabricated on a single chip. The HEB mixer chip is based on a superconducting NbN thin film deposited on top of the silicon-on-insulator (SOI) substrate. The thicknesses of the device layer and handling layer of the SOI substrate are 20 μm and 300 μm respectively. The thickness of the device layer is chosen such that it corresponds to a quarter-wave in silicon at 1.35 THz. The HEB mixer is integrated with a bow-tie antenna structure, in turn designed for coupling to a circular waveguide, |
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Notes | Approved | no | |||
Call Number | RPLAB @ kovalyuk @ | Serial | 1111 | ||
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Author | Trifonov, A.; Tong, C.-Y. E.; Grimes, P.; Lobanov, Y.; Kaurova, N.; Blundell, R.; Goltsman, G. | ||||
Title | Development of a silicon membrane-based multipixel hot electron bolometer receiver | Type | Journal Article | ||
Year | 2017 | Publication | IEEE Trans. Appl. Supercond. | Abbreviated Journal | IEEE Trans. Appl. Supercond. |
Volume | 27 | Issue | 4 | Pages | 1-5 |
Keywords | Multi-pixel, NbN HEB, silicon-on-insulator, horn array | ||||
Abstract | We report on the development of a multipixel hot electron bolometer (HEB) receiver fabricated using silicon membrane technology. The receiver comprises a 2 × 2 array of four HEB mixers, fabricated on a single chip. The HEB mixer chip is based on a superconducting NbN thin-film deposited on top of the silicon-on-insulator (SOI) substrate. The thicknesses of the device layer and handling layer of the SOI substrate are 20 and 300 μm, respectively. The thickness of the device layer is chosen such that it corresponds to a quarter-wave in silicon at 1.35 THz. The HEB mixer is integrated with a bow-tie antenna structure, in turn designed for coupling to a circular waveguide, fed by a monolithic drilled smooth-walled horn array. | ||||
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ISSN | 1051-8223 | ISBN | Medium | ||
Area | Expedition | Conference | |||
Notes | Approved | no | |||
Call Number | Serial | 1324 | |||
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Author | Elezov, M. S.; Shcherbatenko, M. L.; Sych, D. V.; Goltsman, G. N. | ||||
Title | Development of control method for an optimal quantum receiver | Type | Conference Article | ||
Year | 2020 | Publication | J. Phys.: Conf. Ser. | Abbreviated Journal | J. Phys.: Conf. Ser. |
Volume | 1695 | Issue | Pages | 012126 | |
Keywords | Helstrom bound, SPD, single photon detector, below quantum limit | ||||
Abstract | We propose a method for optimal displacement controlling of an optimal quantum receiver for registrations a binary coherent signal. An optimal receiver is able to distinguish between two phase-modulated states of a coherent signal. The optimal receiver controlling method can be used later in practice in various physical implementations of the optimal receiver. | ||||
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ISSN | 1742-6588 | ISBN | Medium | ||
Area | Expedition | Conference | |||
Notes | Approved | no | |||
Call Number | Serial | 1264 | |||
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Author | Romanov, N. R.; Zolotov, P. I.; Smirnov, K. V. | ||||
Title | Development of disordered ultra-thin superconducting vanadium nitride films | Type | Conference Article | ||
Year | 2019 | Publication | Proc. 8th Int. Conf. Photonics and Information Optics | Abbreviated Journal | Proc. 8th Int. Conf. Photonics and Information Optics |
Volume | Issue | Pages | 425-426 | ||
Keywords | VN films | ||||
Abstract | We present the results of development and research of superconducting vanadium nitride VN films ~10 nm thick having different level of disorder. It is showed that both silicon substrate temperature T sub in process of magnetron sputtering and total gas pressure P affect superconducting transition temperature of sputtered films and R 300 /R 20 ratio defining their level of disorder. VN films suitable for development of superconducting single-photon detectors on their basis are obtained. | ||||
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Language | Russian | Summary Language | Original Title | ||
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ISSN | ISBN | 978-5-7262-2536-4 | Medium | ||
Area | Expedition | Conference | |||
Notes | http://fioconf.mephi.ru/files/2018/12/FIO2019-Sbornik.pdf | Approved | no | ||
Call Number | Serial | 1802 | |||
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