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Rosfjord, K. M., Yang, J. K. W., Dauler, E. A., Anant, V., Berggren, K. K., Kerman, A. J., et al. (2006). Increased detection efficiencies of nanowire single-photon detectors by integration of an optical cavity and anti-reflection coating. In CLEO/QELS (JTuF2 (1 to 2)).
Abstract: We fabricate and test superconducting NbN-nanowire single-photon detectors with an integrated optical cavity and anti-reflection coating. We design the cavity and coating such as to maximize absorption in the NbN film of the detector.
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Vasilev, D. D., Malevannaya, E. I., Moiseev, K. M., Zolotov, P. I., Antipov, A. V., Vakhtomin, Y. B., et al. (2020). Influence of deposited material energy on superconducting properties of the WSi films. In IOP Conf. Ser.: Mater. Sci. Eng. (Vol. 781, 012013 (1 to 6)).
Abstract: WSi thin films have the advantages for creating SNSPDs with a large active area or array of detectors on a single substrate due to the amorphous structure. The superconducting properties of ultrathin WSi films substantially depends on their structure and thickness as the NbN films. Scientific groups investigating WSi films mainly focused only on changes of their thickness and the ratio of the components on the substrate at room temperature. This paper presents experiments to determine the effect of the bias potential on the substrate, the temperature of the substrate, and the peak power of pulsed magnetron sputtering, which is the equivalent of ionization, a tungsten target, on the surface resistance and superconducting properties of the WSi ultrathin films. The negative effect of the substrate temperature and the positive effect of the bias potential and the ionization coefficient (peak current) allow one to choose the best WSi films formation mode for SNSPD: substrate temperature 297 K, bias potential -60 V, and peak current 3.5 A.
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Zolotov, P. I., Divochiy, A. V., Vakhtomin, Y. B., Lubenchenko, A. V., Morozov, P. V., Shurkaeva, I. V., et al. (2018). Influence of sputtering parameters on the main characteristics of ultra-thin vanadium nitride films. In J. Phys.: Conf. Ser. (Vol. 1124, 051030).
Abstract: We researched the relation between deposition and ultra-thin VN films parameters. To conduct the experimental study we varied substrate temperature, Ar and N2 partial pressures and deposition rate. The study allowed us to obtain the films with close to the bulk values transition temperatures and implement such samples in order to fabricate superconducting single-photon detectors.
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Baselmans, J. J. A., Baryshev, A., Hajenius, M., Gao, J. R., Klapwijk, T. M., Voronov, B., et al. (2006). Influence of the direct response on the heterodyne sensitivity of hot electron bolometer mixers. In Proc. 17th Int. Symp. Space Terahertz Technol. (81).
Abstract: We present a detailed experimental study of the direct detection effect in a small volume (0.15pm x lpm) NbN hot electron bolometer mixer. It is a quasioptical mixer with a twin slot antenna designed for 700 GHz and the measurement was done at a LO frequency of 670 GHz. The direct detection effect is characterized by a change in the mixer bias current when switching broadband radiation from a 300 K hot load to a 77 K cold load in a standard Y factor measurement. The result is, depending on the receiver under study, an increase or decrease in the receiver noise temperature. We find that the small signal noise temperature, which is the noise temperature that would be observed without the presence of the direct detection effect, and thus the one that is relevant for an astronomical observation, is 20% lower than the noise temperature obtained using 300 K and 77 K calibration loads. Thus, in our case the direct detection effect reduces the mixer sensitivity. These results are in good agreement with previous measurement at THz frequencies [1]. Other experiments report an increase in mixer sensitivity [2]. To analyze this discrepancy we have designed a separate set of experiments to find out the physical origin of the direct detection effect. Possible candidates are the bias current dependence of the mixer gain and the bias current dependence of the IF match. We measured directly the change in mixer IF match and receiver gain due to the direct detection effect. From these measurements we conclude that the direct detection effect is caused by a combination of bias current reduction when switching form the 77 K to the 300 K load in combination with the bias current dependence of the receiver gain. The bias current dependence of the receiver gain is shown to be mainly caused by the current dependence of the mixer gain. We also find that an increase in receiver sensitivity due to the direct detection effect is only possible if the noise temperature change due to the direct detection is dominated by the mixer-amplifier IF match. [1] J.J.A. Baselmans, A. Baryshev, S.F. Reker, M. Hajenius, J.R. Gao, T.M. Klapwijk, Yu.Vachtomin, S. Maslennikov, S. Antipov, B. Voronov, and G. Gol'tsman., Appl. Phys. Lett. 86, 163503 (2005). [2] S. Svechnokov, A. Verevkin, B. Voronov, E. Menschikov. E. Gershenzon, G. Gol'tsman, 9th Int. Symp. On Space THz. Techn., 45, (1999).
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Kovaluyk, V., Lazarenko, P., Kozyukhin, S., An, P., Prokhodtsov, A., Goltsman, G., et al. (2019). Influence of the phase state of Ge2Sb2Te5 thin cover on the parameters of the optical waveguide structures. In Proc. Amorphous and Nanostructured Chalcogenides (pp. 47–48). Technical University of Moldova.
Abstract: The fast switching time of Ge-Sb-Te thin films between amorphous and crystalline states initiated by laser beam as well as significant change of their optical properties and the preservation of metastable states for tens of years open wide perspectives for the application of these materials to fully optical devices [1], including high-speed optical memory [2]. Here we study optical properties of the Ge2Sb2Te5 (GST225) thin films integrated with on-chip silicon nitride O-ring resonator. The rib waveguide of the resonator was formed the first stage of e-beam lithography and subsequent reactive-ion etching. We used the second stage of e-beam lithography combining with lift-off method for the formation of GST225 active region on the resonator ring surface. The amorphous GST225 thin films were prepared by magnetron sputtering, and were capped by thin silicon oxide on their tops. The length of the GST225 active region varied from 0.1 to 20 μ m. Crystallization of amorphous thin films was carried out at the temperature of 400 °C for 30 minutes. Auger electron spectroscopy and transmission electron microscopy were used for studying composition and structure of investigated GST225thin films, respectively. It was observed that crystallization of amorphous GST225 film lead to a decrease of the optical power, transmitted through the waveguide. Comparison of the optical transmittance of O-ring resonators before and after the GST225 deposition allowed to identify the change in the Q-factor and the wavelength peak shift. This can be explained by the differences of the complex refractive indexes of GST225 thin films in the amorphous and crystalline states. From the measurement data, the GST225 effective refractive index was extracted depending on the ring waveguide width of the resonator for a telecommunication wavelength of 1550 nm.
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Smirnov, K. V., Vakhtomin, Y. B., Divochiy, A. V., Ozhegov, R. V., Pentin, I. V., & Gol'tsman, G. N. (2010). Infrared and terahertz detectors on basis of superconducting nanostructures. In IEEE (Ed.), Microwave and Telecom. Technol. (CriMiCo), 20th Int. Crimean Conf. (pp. 823–824).
Abstract: Results of development of single-photon receiving systems of visible, infrared and terahertz range based on thin-film superconducting nanostructures are presented. The receiving systems are produced on the basis of superconducting nanostructures, which function by means of hot-electron phenomena.
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Zhang, J., Pearlman, A., Slysz, W., Verevkin, A., Sobolewski, R., Okunev, O., et al. (2003). Infrared picosecond superconducting single-photon detectors for CMOS circuit testing. In CLEO/QELS (Cmv4). Optical Society of America.
Abstract: Novel, NbN superconducting single-photon detectors have been developed for ultrafast, high quantum efficiency detection of single quanta of infrared radiation. Our devices have been successfully implemented in a commercial VLSI CMOS circuit testing system.
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Wild, W., Baryshev, A., de Graauw, T., Kardashev, N., Likhachev, S., Goltsman, G., et al. (2008). Instrumentation for Millimetron – a large space antenna for THz astronomy. In Proc. 19th Int. Symp. Space Terahertz Technol. (pp. 186–191).
Abstract: Millimetron is a Russian-led 12m diameter submillimeter and far-infrared space observatory which is included in the Space Plan of the Russian Federation and funded for launch after 2015. With its large collecting area and state-of-the-art receivers, it will enable unique science and allow at least one order of magnitude improvement with respect to the Herschel Space Observatory. Millimetron is currently in a conceptual design phase carried out by the Astro Space Center in Moscow and SRON Netherlands Institute for Space Research. It will use a passively cooled deployable antenna with a high-precision central 3.5m diameter mirror and high- precision antenna petals. The antenna is specified for observations up to ~2 THz over the whole 12m diameter, and to higher frequencies using the central 3.5m solid mirror. Millimetron will be operated in two basic observing modes: as a single-dish observatory, and as an element of a ground-space VLBI system. As single-dish, angular resolutions on the order of 3 to 12 arcsec will be achieved and spectral resolutions of up to 10 6 employing heterodyne techniques. As VLBI antenna, the chosen elliptical orbit will provide extremely large VLBI baselines resulting in micro-arcsec angular resolution. The scientific payload will consist of heterodyne and direct detection instruments covering the most important sub-/millimeter spectral regions (including some ALMA bands) and will build on the Herschel and ALMA heritage.
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Zubkova, E., An, P., Kovalyuk, V., Korneev, A., Ferrari, S., Pernice, W., et al. (2017). Integrated Bragg waveguides as an efficient optical notch filter on silicon nitride platform. In J. Phys.: Conf. Ser. (Vol. 917, 062042).
Abstract: We modeled and fabricated integrated optical Bragg waveguides on a silicon nitride (Si3N4) platform. These waveguides would serve as efficient notch-filters with the desired characteristics. Transmission spectra of the fabricated integrated notch filters have been measured and attenuation at the desired wavelength of 1550 nm down to -43 dB was observed. Performance of the filters has been studied depending on different parameters, such as pitch, filling factor, and height of teeth of the Bragg grating
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Zubkova, E., An, P., Kovalyuk, V., Korneev, A., & Goltsman, G. (2017). Integrated Bragg waveguides as an efficient optical notch filter on silicon nitride platform. In Proc. SPBOPEN (pp. 449–450).
Abstract: We modeled and fabricated integrated optical Bragg waveguides on a silicon nitride (Si3N4) platform. Transmission spectra of the integrated notch filter has been measured and attenuation at the desired wavelength of 1550 nm down to -43 dB was observed.
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