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Gol'tsman, G.; Kouminov, P.; Goghidze, I.; Gershenzon, E. |
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Nonequilibrium kinetic inductive response of YBCO thin films to low power laser pulses |
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1995 |
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IEEE Trans. Appl. Supercond. |
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IEEE Trans. Appl. Supercond. |
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5 |
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2 |
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2591-2594 |
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YBCO HTS KID |
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We have discovered a transient nonequilibrium kinetic inductive voltage response of YBCO thin films to 20 ps pulses of YAG:Nd laser radiation with 0.63 /spl mu/m and 1.54 /spl mu/m wavelength. By increasing the sensitivity of the read-out system with 100 ps resolution time and diminishing the light intensity (fluence 0.1-2 /spl mu/J/cm/sup 2/) and transport current (density /spl les/10/sup 5/ A/cm/sup 2/) we were able to observe a peculiar bipolar signal form with nearly equal amplitudes for each sign. The integration of the kinetic inductive response over time gives the result which is qualitatively, of the same form as the response in the resistive and normal states: the nonequilibrium picosecond scale component is followed by the bolometric nanosecond component. The nonequilibrium response is interpreted as suppression of the order parameter by excess quasiparticles followed by a change both in resistance (for the resistive state) and in kinetic inductance (for the superconducting state). |
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1051-8223 |
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1621 |
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Zhang, J.; Boiadjieva, N.; Chulkova, G.; Deslandes, H.; Gol'tsman, G. N.; Korneev, A.; Kouminov, P.; Leibowitz, M.; Lo, W.; Malinsky, R.; Okunev, O.; Pearlman, A.; Slysz, W.; Smirnov, K.; Tsao, C.; Verevkin, A.; Voronov, B.; Wilsher, K.; Sobolewski, R. |
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Noninvasive CMOS circuit testing with NbN superconducting single-photon detectors |
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Journal Article |
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2003 |
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Electron. Lett. |
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Electron. Lett. |
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39 |
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14 |
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1086-1088 |
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NbN SSPD, SNSPD, applications |
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The 3.5 nm thick-film, meander-structured NbN superconducting single-photon detectors have been implemented in the CMOS circuit-testing system based on the detection of near-infrared photon emission from switching transistors and have significantly improved the performance of the system. Photon emissions from both p- and n-MOS transistors have been observed. |
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0013-5194 |
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1512 |
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Gershenzon, E. M.; Gershenzon, M. E.; Gol'tsman, G. N.; Semenov, A. D.; Sergeev, A. V. |
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Nonselective effect of electromagnetic radiation on a superconducting film in the resistive state |
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1982 |
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JETP Lett. |
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JETP Lett. |
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36 |
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7 |
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296-299 |
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HEB |
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Неселективное воздействие электромагнитного излучения на сверхпроводящую пленку в резистивном состоянии |
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1717 |
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Semenov, A. D.; Gol’tsman, G. N. |
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Nonthermal mixing mechanism in a diffusion-cooled hot-electron detector |
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2000 |
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J. Appl. Phys. |
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J. Appl. Phys. |
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87 |
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1 |
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502-510 |
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NbN HEB mixers, nonthermal |
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We present an analysis of a diffusion-cooled hot-electron detector fabricated from clean superconducting material with low transition temperature. The distinctive feature of a clean material, i.e., material with large electron mean free path, is a relatively weak inelastic electron scattering that is not sufficient for the establishment of an elevated thermodynamic electron temperature when the detector is subjected to irradiation. We propose an athermal model of a diffusion-cooled detector that relies on suppression of the superconducting energy gap by the actual dynamic distribution of excess quasiparticles. The resistive state of the device is caused by the electric field penetrating into the superconducting bridge from metal contacts. The dependence of the penetration length on the energy gap delivers the detection mechanism. The sources of the electric noise are equilibrium fluctuations of the number of thermal quasiparticles and frequency dependent shot noise. Using material parameters typical for A1, we evaluate performance of the device in the heterodyne regime at terahertz frequencies. Estimates show that the mixer may have a noise temperature of a few quantum limits and a bandwidth of a few tens of GHz, while the required local oscillator power is in the μW range due to ineffective suppression of the energy gap by quasiparticles with high energies. |
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0021-8979 |
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1558 |
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Gershenzon, E. M.; Gol'tsman, G. N.; Kagane, M. L. |
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Observation of free carrier resonances in p-type germanium at submillimeter wavelengths |
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1978 |
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Sov. Phys. Solid State |
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Sov. Phys. Solid State |
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20 |
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4 |
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573-579 |
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p-Ge, free carriers, resonances |
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The spectrum of hole resonances in pure p-Ge for submillimetre in quantizing magnetic fields has been studied and identified. Measurements of photoconductivity spectra of p-Ge were made in the wave range lambda = 2-0.3 mm at temp. of 4.2-15 deg K in magnetic fields H up to 40 Measurements at various frequencies showed that the position of a series of characteristic resonances depends on the frequency of the illumination. This is in line with theoretical conclusions about the effective mass of the carriers increasing with rise in the magnetic field as a result of the interaction of the edge of the valency band with the split spin-orbital interaction of the sub 7 exp + band and the conduction band. The relative intensity of the quantum resonance lines of the free holes depends on the excitation conditions. |
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1721 |
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