| Records |
| Author |
Kerman, A. J.; Dauler, E. A.; Keicher, W. E.; Yang, J. K. W.; Berggren, K. K.; Gol’tsman, G.; Voronov, B. |
Title  |
Kinetic-inductance-limited reset time of superconducting nanowire photon counters |
Type |
Journal Article |
| Year |
2006 |
Publication |
Appl. Phys. Lett. |
Abbreviated Journal |
Appl. Phys. Lett. |
| Volume |
88 |
Issue |
11 |
Pages |
111116 (1 to 3) |
| Keywords |
NbN SSPD, SNSPD |
| Abstract |
We investigate the recovery of superconducting NbN-nanowire photon counters after detection of an optical pulse at a wavelength of 1550nm, and present a model that quantitatively accounts for our observations. The reset time is found to be limited by the large kinetic inductance of these nanowires, which forces a tradeoff between counting rate and either detection efficiency or active area. Devices of usable size and high detection efficiency are found to have reset times orders of magnitude longer than their intrinsic photoresponse time.
The authors acknowledge D. Oates and W. Oliver (MIT Lincoln Laboratory), S.W. Nam, A. Miller, and R. Hadfield (NIST) and R. Sobolewski, A. Pearlman, and A. Verevkin (University of Rochester) for helpful discussions and technical assistance. This work made use of MIT’s shared scanning-electron-beam-lithography facility in the Research Laboratory of Electronics. This work is sponsored by the United States Air Force under Air Force Contract No. FA8721-05-C-0002. Opinions, interpretations, recommendations and conclusions are those of the authors and are not necessarily endorsed by the United States Government. |
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0003-6951 |
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1453 |
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Yang, J. K. W.; Kerman, A. J.; Dauler, E. A.; Anant, V.; Rosfjord, K. M.; Berggren, K. K. |
| Title |
Modeling the electrical and thermal response of superconducting nanowire single-photon detectors |
Type |
Journal Article |
| Year |
2007 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
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| Volume |
17 |
Issue |
2 |
Pages |
581 - 585 |
| Keywords |
SSPD, modeling |
| Abstract |
We modeled the response of superconducting nanowire single-photon detectors during a photodetection event, taking into consideration only the thermal and electrical properties of a superconducting NbN nanowire on a sapphire substrate. Our calculations suggest that heating which occurs after the formation of a photo-induced resistive barrier is responsible for the generation of a measurable voltage pulse. We compared this numerical result with experimental data of a voltage pulse from a slow device, i.e. large kinetic inductance, and obtained a good fit. Using this electro-thermal model, we estimated the temperature rise and the resistance buildup in the nanowire, and the return current at which the nanowire becomes superconducting again. We also show that the reset time of these photodetectors can be decreased by the addition of a series resistance and provide supporting experimental data. Finally we present preliminary results on a detector latching behavior that can also be explained using the electro-thermal model. |
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625 |
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Dauler, E. A.; Robinson, B. S.; Kerman, A. J.; Yang, J. K. W.; Rosfjord, E. K. M.; Anant, V.; Voronov, B.; Gol'tsman, G.; Berggren, K. K. |
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Multi-element superconducting nanowire single-photon detector |
Type |
Journal Article |
| Year |
2007 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
| Volume |
17 |
Issue |
2 |
Pages |
279-284 |
| Keywords |
SSPD, SNSPD |
| Abstract |
A multi-element superconducting nanowire single photon detector (MESNSPD) is presented that consists of multiple independently-biased superconducting nanowire single photon detector (SNSPD) elements that form a continuous active area. A two-element SNSPD has been fabricated and tested, showing no measurable crosstalk between the elements, sub-50-ps relative timing jitter, and four times the maximum counting rate of a single SNSPD with the same active area. The MESNSPD can have a larger active area and higher speed than a single-element SNSPD and the input optics can be designed so that the detector provides spatial, spectral or photon number resolution. |
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1051-8223 |
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1428 |
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Schroeder, E.; Mauskopf, P.; Pilyavsky, G.; Sinclair, A.; Smith, N.; Bryan, S.; Mani, H.; Morozov, D.; Berggren, K.; Zhu, D.; Smirnov, K.; Vakhtomin, Y. |
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On the measurement of intensity correlations from laboratory and astronomical sources with SPADs and SNSPDs |
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Conference Article |
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2016 |
Publication |
Proc. SPIE |
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Proc. SPIE |
| Volume |
9907 |
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Pages |
99070P (1 to 13) |
| Keywords |
SPAD, NbN SSPD applications, SNSPD |
| Abstract |
We describe the performance of detector modules containing silicon single photon avalanche photodiodes (SPADs) and superconducting nanowire single photon detectors (SNSPDs) to be used for intensity interferometry. The SPADs are mounted in fiber-coupled and free-space coupled packages. The SNSPDs are mounted in a small liquid helium cryostat coupled to single mode fiber optic cables which pass through a hermetic feed-through. The detectors are read out with microwave amplifiers and FPGA-based coincidence electronics. We present progress on measurements of intensity correlations from incoherent sources including gas-discharge lamps and stars with these detectors. From the measured laboratory performance of the correlation system, we estimate the sensitivity to intensity correlations from stars using commercial telescopes and larger existing research telescopes. |
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SPIE |
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Malbet, F.; Creech-Eakman, M.J.; Tuthill, P.G. |
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Optical and Infrared Interferometry and Imaging V |
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1809 |
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Yang, J.K.W.; Kerman, A.J.; Dauler, E.A.; Cord, B.; Anant, V.; Molnar, R.J.; Berggren, K.K. |
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Suppressed critical current in superconducting nanowire single-photon detectors with high fill-factors |
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2009 |
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IEEE Trans. Appl. Supercond. |
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19 |
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3 |
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318-322 |
| Keywords |
SNSPD |
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In this work we present a new fabrication process that enabled the fabrication of superconducting nanowire single photon detectors SNSPD with fill-factors as high as 88% with gaps between nanowires as small as 12 nm. This fabrication process combined high-resolution electron-beam lithography with photolithography. Although this work was motivated by the potential of increased detection efficiency with higher fill-factor devices, test results showed an unexpected systematic suppression in device critical currents with increasing fill-factor. |
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RPLAB @ gujma @ |
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