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Author Smirnov, K.; Korneev, A.; Minaeva, O.; Divochij, A.; Rubtsova, I.; Antipov, A.; Ryabchun, S.; Okunev, O.; Milostnaya, I.; Chulkova, G.; Voronov, B.; Kaurova, N.; Seleznev, V.; Korotetskaya, Y.; Gol’tsman, G. url  doi
openurl 
  Title (up) Superconducting single-photon detector for near- and middle IR wavelength range Type Conference Article
  Year 2006 Publication Proc. 16th Int. Crimean Microwave and Telecommunication Technology Abbreviated Journal Proc. 16th Int. Crimean Microwave and Telecommunication Technology  
  Volume 2 Issue Pages 684-685  
  Keywords NbN SSPD, SNSPD  
  Abstract Presented in this paper are the results of research of NbN-film superconducting single-photon detector. At 2 K temperature, quantum efficiency in the visible light (0.56 mum) reaches 30-40 %. With the wavelength increase quantum efficiency decreases and comes to  20% at 1.55 mum and  0.02% at 5.6 mum. Minimum dark counts rate is 2times10-4s-1. The jitter of detector is 35 ps. The detector was successfully implemented for integrated circuits non-invasive optical testing. It is also perspective for quantum cryptography systems  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Russian Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1447  
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Author Tretyakov, I.; Kaurova, N.; Raybchun, S.; Goltsman, G. N.; Silaev, A. A. url  doi
openurl 
  Title (up) Technology for NbN HEB based multipixel matrix of THz range Type Conference Article
  Year 2018 Publication EPJ Web Conf. Abbreviated Journal EPJ Web Conf.  
  Volume 195 Issue Pages 05011  
  Keywords NbN HEB  
  Abstract The influence of homogeneity disorder degree of the thin superconducting NbN film across of Si wafer on characteristics of the Hot Electron Bolometers (HEB) has been investigated. Our experiments have been carried out near the superconducting transition and far below it. The high homogeneity disorder degree of the NbN film has been achieved by preparing the Si substrate surface. The fabricated HEBs all have almost identical R (T) characteristics with a dispersion of Tc and the normal resistance R300 of not more than 0.15K and 2 Ω, respectively. The quality of the devises allows us to demonstrate clearly the influence of non-equilibrium processes in the S’SS’ system on the device performance. Our fabrication technology also allows creating multiplex heterodyne and direct detector matrices based the HEB devices.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 2100-014X ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1318  
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Author Vakhtomin, Y. B.; Finkel, M. I.; Antipov, S. V.; Smirnov, K. V.; Kaurova, N. S.; Drakinskii, V. N.; Voronov, B. M.; Gol’tsman, G. N. url  openurl
  Title (up) The gain bandwidth of mixers based on the electron heating effect in an ultrathin NbN film on a Si substrate with a buffer MgO layer Type Journal Article
  Year 2003 Publication J. of communications technol. & electronics Abbreviated Journal J. of communications technol. & electronics  
  Volume 48 Issue 6 Pages 671-675  
  Keywords NbN HEB mixers  
  Abstract Measurements of the intermediate frequency band 900 GHz of mixers based on the electron heating effect (EHE) in 2-nm- and 3.5-nm-thick superconducting NbN films sputtered on MgO and Si substrates with buffer MgO layers are presented. A 2-nm-thick superconducting NbN film with a critical temperature of 9.2 K has been obtained for the first time using a buffer MgO layer.  
  Address  
  Corporate Author Thesis  
  Publisher MAIK Nauka/Interperiodica, Birmingham, AL Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1064-2269 ISBN Medium  
  Area Expedition Conference  
  Notes https://elibrary.ru/item.asp?id=17302119 (Полоса преобразования смесителей на эффекте разогрева электронов в ультратонких пленках NbN на подложках из Si с подслоем MgO) Approved no  
  Call Number Vakhtomin2003 Serial 1522  
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Author Tret'yakov, I. V.; Kaurova, N. S.; Voronov, B. M.; Anfert'ev, V. A.; Revin, L. S.; Vaks, V. L.; Gol'tsman, G. N. doi  openurl
  Title (up) The influence of the diffusion cooling on the noise band of the superconductor NbN hot-electron bolometer operating in the terahertz range Type Journal Article
  Year 2016 Publication Tech. Phys. Lett. Abbreviated Journal  
  Volume 42 Issue 6 Pages 563-566  
  Keywords HEB, noise bandwidth, conversion gain bandwidth, noise temperature, Andreev reflection  
  Abstract Results of an experimental study of the noise temperature (Tn) and noise bandwidth (NBW) of the superconductor NbN hot-electron bolometer (HEB) mixer as a function of its temperature (Tb) are presented. It was determined that the NBW of the mixer is significantly wider at temperatures close to the critical ones (Tc) than are values measured at 4.2 K. The NBW of the mixer measured at the heterodyne frequency of 2.5 THz at temperature Tb close to Tc was ~13 GHz, as compared with 6 GHz at Tb = 4.2 K. This experiment clearly demonstrates the limitation of the thermal flow from the NbN bridge at Tb â‰<aa> Tc for mixers manufactured by the in situ technique. This limitation is close in its nature to the Andreev reflection on the superconductor/ metal boundary. In this case, the noise temperature of the studied mixer increased from 1100 to 3800 K.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1106  
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Author Meledin, D.; Tong, C. Y.-E.; Blundell, R.; Kaurova, N.; Smirnov, K.; Voronov, B.; Gol'tsman, G. url  openurl
  Title (up) The sensitivity and IF bandwidth of waveguide NbN hot electron bolometer mixers on MgO buffer layers over crystalline quartz Type Conference Article
  Year 2002 Publication Proc. 13th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 13th Int. Symp. Space Terahertz Technol.  
  Volume Issue Pages 65-72  
  Keywords waveguide NbN HEB mixers  
  Abstract We have developed and characterized waveguide phonon-cooled NbN Hot Electron Bolometer (FMB) mixers fabricated from a 3-4 nm thick NbN film deposited on a 200nm thick MgO buffer layer over crystalline quartz. Double side band receiver noise temperatures of 900-1050 K at 1.035 THz, and 1300-1400 K at 1.26 THz have been measured at an intermediate frequency of 1.5 GHz. The intermediate frequency bandwidth, measured at 0.8 THz LO frequency, is 3.2 GHz at the optimal bias point for low noise receiver operation.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Cambridge, MA, USA Editor Harvard university  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 326  
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Author Shurakov, A.; Mikhalev, P.; Mikhailov, D.; Mityashkin, V.; Tretyakov, I.; Kardakova, A.; Belikov, I.; Kaurova, N.; Voronov, B.; Vasil’evskii, I.; Gol’tsman, G. url  doi
openurl 
  Title (up) Ti/Au/n-GaAs planar Schottky diode with a moderately Si-doped matching sublayer Type Journal Article
  Year 2018 Publication Microelectronic Engineering Abbreviated Journal Microelectronic Engineering  
  Volume 195 Issue Pages 26-31  
  Keywords  
  Abstract In this paper, we report on the results of the study of the Ti/Au/n-GaAs planar Schottky diodes (PSD) intended for the wideband detection of terahertz radiation. The two types of the PSD devices were compared having either the dual n/n+ silicon dopant profile or the triple one with a moderately doped matching sublayer inserted. All the diodes demonstrated no noticeable temperature dependence of ideality factors and barrier heights, whose values covered the ranges of 1.15–1.50 and 0.75–0.85 eV, respectively. We observed the lowering of the flat band barrier height of ∼80 meV after introducing the matching sublayer into the GaAs sandwich. For both the devices types, the series resistance value as low as 20 Ω was obtained. To extract the total parasitic capacitance, we performed the Y-parameters analysis within the electromagnetic modeling of the PSD's behavior via the finite-element method. The capacitance values of 12–12.2 fF were obtained and further verified by measuring the diodes' response voltages in the frequency range of 400–480 GHz. We also calculated the AC current density distribution within the layered structures similar to those being experimentally studied. It was demonstrated that insertion of the moderately Si-doped matching sublayer might be beneficial for implementation of a PSD intended for the operation within the ‘super-THz’ frequency range.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0167-9317 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1155  
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Author Korneev, A.; Minaeva, O.; Divochiy, A.; Antipov, A.; Kaurova, N.; Seleznev, V.; Voronov, B.; Gol’tsman, G.; Pan, D.; Kitaygorsky, J.; Slysz, W.; Sobolewski, R. url  doi
openurl 
  Title (up) Ultrafast and high quantum efficiency large-area superconducting single-photon detectors Type Conference Article
  Year 2007 Publication Proc. SPIE Abbreviated Journal Proc. SPIE  
  Volume 6583 Issue Pages 65830I (1 to 9)  
  Keywords SSPD, SNSPD, superconducting NbN films, infrared single-photon detectors  
  Abstract We present our latest generation of superconducting single-photon detectors (SSPDs) patterned from 4-nm-thick NbN films, as meander-shaped  0.5-mm-long and  100-nm-wide stripes. The SSPDs exhibit excellent performance parameters in the visible-to-near-infrared radiation wavelengths: quantum efficiency (QE) of our best devices approaches a saturation level of  30% even at 4.2 K (limited by the NbN film optical absorption) and dark counts as low as 2x10-4 Hz. The presented SSPDs were designed to maintain the QE of large-active-area devices, but, unless our earlier SSPDs, hampered by a significant kinetic inductance and a nanosecond response time, they are characterized by a low inductance and GHz counting rates. We have designed, simulated, and tested the structures consisting of several, connected in parallel, meander sections, each having a resistor connected in series. Such new, multi-element geometry led to a significant decrease of the device kinetic inductance without the decrease of its active area and QE. The presented improvement in the SSPD performance makes our detectors most attractive for high-speed quantum communications and quantum cryptography applications.  
  Address  
  Corporate Author Thesis  
  Publisher Spie Place of Publication Editor Dusek, M.; Hillery, M.S.; Schleich, W.P.; Prochazka, I.; Migdall, A.L.; Pauchard, A.  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1249  
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Author Tarkhov, M.; Claudon, J.; Poizat, J. Ph.; Korneev, A.; Divochiy, A.; Minaeva, O.; Seleznev, V.; Kaurova, N.; Voronov, B.; Semenov, A. V.; Gol'tsman, G. url  doi
openurl 
  Title (up) Ultrafast reset time of superconducting single photon detectors Type Journal Article
  Year 2008 Publication Appl. Phys. Lett. Abbreviated Journal Appl. Phys. Lett.  
  Volume 92 Issue 24 Pages 241112 (1 to 3)  
  Keywords SSPD, SNSPD  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0003-6951 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 429  
Permanent link to this record
 

 
Author Goltsman, G.; Korneev, A.; Divochiy, A.; Minaeva, O.; Tarkhov, M.; Kaurova, N.; Seleznev, V.; Voronov, B.; Okunev, O.; Antipov, A.; Smirnov, K.; Vachtomin, Yu.; Milostnaya, I.; Chulkova, G. url  doi
openurl 
  Title (up) Ultrafast superconducting single-photon detector Type Journal Article
  Year 2009 Publication J. Modern Opt. Abbreviated Journal J. Modern Opt.  
  Volume 56 Issue 15 Pages 1670-1680  
  Keywords SSPD, SNSPD  
  Abstract The state-of-the-art of the NbN nanowire superconducting single-photon detector technology (SSPD) is presented. The SSPDs exhibit excellent performance at 2 K temperature: 30% quantum efficiency from visible to infrared, negligible dark count rate, single-photon sensitivity up to 5.6 µm. The recent achievements in the development of GHz counting rate devices with photon-number resolving capability is presented.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0950-0340 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number RPLAB @ akorneev @ Serial 607  
Permanent link to this record
 

 
Author Verevkin, A. A.; Pearlman, A.; Slysz, W.; Zhang, J.; Sobolewski, R.; Chulkova, G.; Okunev, O.; Kouminov, P.; Drakinskij, V.; Smirnov, K.; Kaurova, N.; Voronov, B.; Gol’tsman, G.; Currie, M. url  doi
openurl 
  Title (up) Ultrafast superconducting single-photon detectors for infrared wavelength quantum communications Type Conference Article
  Year 2003 Publication Proc. SPIE Abbreviated Journal Proc. SPIE  
  Volume 5105 Issue Pages 160-170  
  Keywords NbN SSPD, SNSPD, applications, single-photon detector, quantum cryptography, quantum communications, superconducting devices  
  Abstract We have developed a new class of superconducting single-photon detectors (SSPDs) for ultrafast counting of infrared (IR) photons for secure quantum communications. The devices are operated on the quantum detection mechanism, based on the photon-induced hotspot formation and subsequent appearance of a transient resistive barrier across an ultrathin and submicron-wide superconducting stripe. The detectors are fabricated from 3.5-nm-thick NbN films and they operate at 4.2 K inside a closed-cycle refrigerator or liquid helium cryostat. Various continuous and pulsed laser sources have been used in our experiments, enabling us to determine the detector experimental quantum efficiency (QE) in the photon-counting mode, response time, time jitter, and dark counts. Our 3.5-nm-thick SSPDs reached QE above 15% for visible light photons and 5% at 1.3 – 1.5 μm infrared range. The measured real-time counting rate was above 2 GHz and was limited by the read-out electronics (intrinsic response time is <30 ps). The measured jitter was <18 ps, and the dark counting rate was <0.01 per second. The measured noise equivalent power (NEP) is 2 x 10-18 W/Hz1/2 at λ = 1.3 μm. In near-infrared range, in terms of the counting rate, jitter, dark counts, and overall sensitivity, the NbN SSPDs significantly outperform their semiconductor counterparts. An ultrafast quantum cryptography communication technology based on SSPDs is proposed and discussed.  
  Address  
  Corporate Author Thesis  
  Publisher SPIE Place of Publication Editor Donkor, E.; Pirich, A.R.; Brandt, H.E.  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference Quantum Information and Computation  
  Notes Approved no  
  Call Number Serial 1514  
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