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Carlstrom, J. E., & Jonas Zmuidzinas. (1996). Millimeter and Submillimeter Techniques. (848). Review of radio science 1993–1996, (34). New York: Oxford University Press Inc.
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Dickert, F. L., Haunschild, A., Kuschow, V., Reif, M., & Stathopulos, H. (1996). Mass-sensitive detection of solvent vapors. Mechanistic studies on host-guest sensor principles by FT-IR spectroscopy and BET adsorption analysis. Anal. Chem., 68(6), 1058–1061.
Abstract: Chemical sensors, based on highly mass sensitive QMB or SAW devices, coated with thin layers of calixarenes, enable the detection of organic solvent vapours, especially halogenated or aromatic hydrocarbons, down to a few ppm. Force field calculations allow the tailoring of these sensor materials seeing that the predicted interaction energies between the host molecules and a large variety of analytes are linearly correlated to the measured sensor effects. These correlations and also BET adsorption analysis prove the analyte recognition properties of these calixarene coatings to be mainly based on host/guest inclusion principles.
Keywords: supramolecular recognition, quartz crystal microbalance, QCM, surface acoustic wave, SAW, mass-sensitive sensor, detector, calixarenes, MM3 force field, Brunauer, Emmett and Teller theory, BET
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Tinkham, M. (1996). Introduction to superconductivity (2nd ed.). USA.
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Currie, N. C., Demma, F. J., Ferris Jr., D. D., Kwasowsky, B. R., McMillan, R. W., & Wicks, M. C. (1996). Infrared and millimeter-wave sensors for military special operations and law enforcement applications. Int. J. Infrared and Millimeter Waves, 17(7), 1117–1138.
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Ekström, H., Kroug, M., Belitsky, V., Kollberg, E., Olsson, H., Goltsman, G., et al. (1996). Hot electron mixers for THz applications. In E. J. Rolfe, & G. Pilbratt (Eds.), Proc. 30th ESLAB (pp. 207–210).
Abstract: We have measured the noise performance of 35 A thin NbN HEB devices integrated with spiral antennas on antireflection coated silicon substrate lenses at 620 GHz. From the noise measurements we have determined a total conversion gain of the receiver of—16 dB, and an intrinsic conversion of about-10 dB. The IF bandwidth of the 35 A thick NbN devices is at least 3 GHz. The DSB receiver noise temperature is less than 1450 K. Without mismatch losses, which is possible to obtain with a shorter device, and with reduced loss from the beamsplitter, we expect to achieve a DSB receiver noise temperature of less ‘than 700 K.
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Semenov, A. D., Gousev, Y. P., Nebosis, R. S., Renk, K. F., Yagoubov, P., Voronov, B. M., et al. (1996). Heterodyne detection of THz radiation with a superconducting hot‐electron bolometer mixer. Appl. Phys. Lett., 69(2), 260–262.
Abstract: We report on the use of a superconducting hot‐electron bolometer mixer for heterodyne detection of terahertz radiation. Radiation with a wavelength of 119 μm was coupled to the mixer, a NbN microbridge, by a hybrid quasioptical antenna consisting of an extended hyperhemispherical lens and a planar logarithmic spiral antenna. We found, at an intermediate frequency of 1.5 GHz, a system double side band noise temperature of ≊40 000 K and conversion losses of 25 dB. We also discuss the possibilities of further improvement of the mixer performance.
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Ellison, B. N., Maddison, B. J., Matheson, D. N., Oldfield, M. L., Marazita, S., Crowe, T. W., et al. (1996). First results for a 2.5 THz Schottky diode waveguide mixer. In Proc. 7th Int. Symp. Space Terahertz Technol. (494). Charlottesville, Virginia, USA.
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Il'in, K. S., Karasik, B. S., Ptitsina, N. G., Sergeev, A. V., Gol'tsman, G. N., Gershenzon, E. M., et al. (1996). Electron-phonon-impurity interference in thin NbC films: electron inelastic scattering time and corrections to resistivity. In Czech. J. Phys. (Vol. 46, pp. 857–858).
Abstract: Complex study of transport properties of impure NbC films with the electron mean free pathl=0.6–13 nm show the crucial role of the electron-phonon-impurity interference (EPII). In the temperature range 20–70 K we found the interference correction to resistivity proportional to T2 and to the residual resistivity of the film. Using the comprehensive theory of EPII, we determine the electron coupling with transverse phonons and calculate the electron inelastic scattering time. Direct measurements of the inelastic electron scattering time using a response to a high-frequency amplitude modulated cw radiation agree well with the theory.
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Chulcova, G. M., Ptitsina, N. G., Gershenzon, E. M., Gershenzon, M. E., & Sergeev, A. V. (1996). Effect of the interference between electron-phonon and electron-impurity (boundary) scattering on resistivity Nb, Al, Be films. In Czech J. Phys. (Vol. 46, pp. 2489–2490).
Abstract: The temperature dependence of the resistivity of thin Nb, Al, Be films has been studied over a wide temperature range 4-300 K. We have found that the temperature-dependent correction to the residual resistivity is well described by the sum of the Bloch-Grüneisen term and the term originating from the interference between electron-phonon and electron-impurity scattering. Study of the transport interference phenomena allows to determine electron-phonon coupling in disordered metals. The interference term is proportional to T2 and also to the residual resistivity and dominates over the Bloch-Grüneisen term at low temperatures (T<40 K).
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Verevkin, A. A., Ptitsina, N. G., Smirnov, K. V., Gol’tsman, G. N., Gershenzon, E. M., & Ingvesson, K. S. (1996). Direct measurements of energy relaxation times on an AlGaAs/GaAs heterointerface in the range 4.2–50 K. JETP Lett., 64(5), 404–409.
Abstract: The temperature dependence of the energy relaxation time τe (T) of a two-dimensional electron gas at an AlGaAs/GaAs heterointerface is measured under quasiequilibrium conditions in the region of the transition from scattering by acoustic phonons to scattering with the participation of optical phonons. The temperature interval of constant τe, where scattering by the deformation potential predominates, is determined. In the preceding, low-temperature region, where piezoacoustic and deformation-potential-induced scattering processes coexist, τ e decreases slowly with increasing temperature. Optical phonons start to participate in the scattering processes at T∼25 K (the characteristic phonon lifetime was equal to τLOτ4.5 ps). The energy losses calculated from the τe data in a model with an effective nonequilibrium electron temperature agree with the published data obtained under strong heating conditions.
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Verevkin, A. A., Ptitsina, N. G., Chulcova, G. M., Gol'tsman, G. N., Gershenzon, E. M., & Yngvesson, K. S. (1996). Direct measurements of energy relaxation time of electrons in AlGaAs/GaAs heterostructures under quasi-equilibrium conditions. Surface Science, 361-362, 569–573.
Abstract: For the first time, results are presented of a direct measurement of the energy relaxation time τε of 2D electrons in an AlGaAs/GaAs heterojunction at T = 1 and 5–20 K. A weak temperature dependence of τε for the T > 4K range and a linear temperature dependence of the reciprocal of τε for T < 4K have been observed. The linear dependence τε−1 ≈ T in the Bloch-Gruneisen regime is direct evidence of the predominance of the piezo-electric mechanism of electron-phonon interaction in non-elastic electron scattering processes. The values of τε in this regime are in very good agreement with the results of the Karpus theory. At higher temperatures, where the deformation-potential scattering becomes noticeable, a substantial disagreement between the experimental data and the theoretical results is observed.
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Karasik, B. S., Il'in, K. S., Pechen, E. V., & Krasnosvobodtsev, S. I. (1996). Diffusion cooling mechanism in a hot-electron NbC microbolometer mixer. Appl. Phys. Lett., 68(16), 2285–2287.
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Verevkin, A. A., Ptitsina, N. G., Chulcova, G. M., Gol'Tsman, G. N., Gershenzon, E. M., & Yngvesson, K. S. (1996). Determination of the limiting mobility of a two-dimensional electron gas in AlxGa1-xAs/GaAs heterostructures and direct measurement of the energy relaxation time. Phys. Rev. B Condens. Matter., 53(12), R7592–R7595.
Abstract: We present results for a method to measure directly the energy relaxation time (τe) for electrons in a single AlxGa1−xAs/GaAs heterojunction; measurements were performed from 1.6 to 15 K under quasiequilibrium conditions. We find τeαT−1 below 4 K, and τe independent of T above 4 K. We have also measured the energy-loss rate, ⟨Q⟩, by the Shubnikov-de Haas technique, and find ⟨Q⟩α(T3e−T3) for T<~4.2 K; Te is the electron temperature. The values and temperature dependence of τe and ⟨Q⟩ for T<4 K agree with calculations based on piezoelectric and deformation potential acoustic phonon scattering. At 4.2 K, we can also estimate the momentum relaxation time, τm, from our measured τe. This leads to a preliminary estimate of the phonon-limited mobility at 4.2 K of μ=3×107 cm2/Vs (ns=4.2×1011 cm−2), which agrees well with published numerical calculations, as well as with an earlier indirect estimate based on measurements on a sample with much higher mobility.
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Tong, C. Y. E., Blundell, R., Paine, S., Papa, D. C., Kawamura, J., Stern, J., et al. (1996). Design and characterization of a 250-350 GHz fixed-tuned superconductor-insulator-insulator receiver. IEEE Trans. Microw. Theory Techn., 44(9), 1548–1556.
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Gousev, Y. P., Semenov, A. D., Pechen, E. V., Varlashkin, A. V., Nebosis, R. S., & Renk K. F. (1996). Coupling of terahertz radiation to a high-Т(с) superconducting hot electron bolometer mixer. Appl. Phys. Lett.,, 69, 691–693.
Abstract: We report on efficient coupling of THz radiation to a high-T(c) superconducting hot electron bolometer that is suitable for heterodyne detection. Our quasioptical system consisted of a planar self-complementary spiral antenna on a dielectric substrate clamped to an extended hyperhemispherical lens. The antenna was integrated into a co-planar line for broadband intermediate frequency matching. Measurements in the homodyne regime at a frequency of 2.5 THz showed a radiation pattern with a beam width of 1° and a coupling efficiency of 0.1. We measured, at an intermediate frequency of 1.5 GHz, an output noise temperature of'160 K and estimated for the device, operated in the heterodyne regime, a system noise temperature of 30 000 K. We also discuss possibilities of significant improvement of the sensitivity.
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