Records |
Author |
Zhang, J.; Pearlman, A.; Slysz, W.; Verevkin, A.; Sobolewski, R.; Okunev, O.; Korneev, A.; Kouminov, P.; Smirnov, K.; Chulkova, G.; Gol’tsman, G. N.; Lo, W.; Wilsher, K. |
Title |
Infrared picosecond superconducting single-photon detectors for CMOS circuit testing |
Type |
Conference Article |
Year |
2003 |
Publication |
CLEO/QELS |
Abbreviated Journal |
CLEO/QELS |
Volume |
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Issue |
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Pages |
Cmv4 |
Keywords |
NbN SSPD; SNSPD; Infrared; Quantum detectors; Electron beam lithography; Infrared detectors; Infrared radiation; Quantum efficiency; Single photon detectors; Superconductors |
Abstract |
Novel, NbN superconducting single-photon detectors have been developed for ultrafast, high quantum efficiency detection of single quanta of infrared radiation. Our devices have been successfully implemented in a commercial VLSI CMOS circuit testing system. |
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Optical Society of America |
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Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference |
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1518 |
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Author |
Maslennikov, S. N.; Morozov, D. V.; Ozhegov, R. V.; Smirnov, K. V.; Okunev, O. V.; Gol’tsman, G. N. |
Title |
Imaging system for submillimeter wave range based on AlGaAs/GaAs hot electron bolometer mixers |
Type |
Conference Article |
Year |
2004 |
Publication |
Proc. 5-th MSMW |
Abbreviated Journal |
Proc. 5-th MSMW |
Volume |
2 |
Issue |
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Pages |
558-560 |
Keywords |
AlGaAs/GaAs HEB mixers |
Abstract |
Electromagnetic radiation of the submillimeter (SMM) range is dispersed and absorbed significantly less than infrared (IR) radiation when passing through different objects. That is the reason for the development of an SMM imaging system. In this paper, we discuss the design of an SMM heterodyne imager, based on a matrix of AlGaAs/GaAs heterostructure hot electron bolometer mixers (HEB) with relatively high (about 77 K) operating temperature. The predicted double side band (DSB) noise temperature is about 1000 K and optimal local oscillator (LO) power is about 1 /spl mu/W for such mixers, which seems to be quite prospective for an SMM heterodyne imager. |
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Kharkov, Ukraine |
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The Fifth International Kharkov Symposium on Physics and Engineering of Microwaves, Millimeter, and Submillimeter Waves (IEEE Cat. No.04EX828) |
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1487 |
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Ozhegov, R.; Maslennikov, S.; Morozov, D.; Okunev, O.; Smirnov, K.; Gol'tsman, G. |
Title |
Imaging system for submillimeter wave range |
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Conference Article |
Year |
2004 |
Publication |
Proc. Tenth All-Russian sceintific conference of student-physicists and young sceintists (VNKSF-10) |
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Moscow |
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RPLAB @ s @ thzimaging_vnksf10_2004 |
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347 |
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Dzardanov, A.; Ekstrom, H.; Gershenzon, E.; Gol'tsman, G.; Jacobsson, S.; Karasik, B.; Kollberg, E.; Okunev, O.; Voronov, B.; Yngvesson, S. |
Title |
Hot-electron superconducting mixers for 20-500 GHz operation |
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Conference Article |
Year |
1994 |
Publication |
Proc. Int. Conf. on Millimeter and Submillimeter Waves and Appl. |
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Volume |
2250 |
Issue |
4D |
Pages |
276-278 |
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Abstract |
Bolometdcmucers based on Nb and NbN superconducting thin films in the resistive state have been prepared for 20, 100 GHz and 350-500 GHz operation. The mixing mechanism is presumably of electron heating origin. Our measurements indicate that a conversion loss of about 6-8 dB can rather easily be achieved, and that the noise is reasonably low. The requirements on the operation mode and on the film parameters in order to obtain small conversion losses or even gain are discussed. For NbN films the availability of nearly 1 GHz IF bandwidth is experimentally demonstrated. NbN hot-electron mucers combined with slot-line tapered antenna on Si membrane or with double-dipole antenna on SiO^ substrate have been fabricated. The devices we study are considered to be very promising for use in heterodyne receivers from microwaves to terahertz frequencies. |
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RPLAB @ phisix @ |
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981 |
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Author |
Korneev, A.; Lipatov, A.; Okunev, O.; Chulkova, G.; Smirnov, K.; Gol’tsman, G.; Zhang, J.; Slysz, W.; Verevkin, A.; Sobolewski, R. |
Title |
GHz counting rate NbN single-photon detector for IR diagnostics of VLSI CMOS circuits |
Type |
Journal Article |
Year |
2003 |
Publication |
Microelectronic Engineering |
Abbreviated Journal |
Microelectronic Engineering |
Volume |
69 |
Issue |
2-4 |
Pages |
274-278 |
Keywords |
NbN SSPD, SNSPD, applications |
Abstract |
We present a new, simple to manufacture superconducting single-photon detector operational in the range from ultraviolet to mid-infrared radiation wavelengths. The detector combines GHz counting rate, high quantum efficiency and very low level of dark (false) counts. At 1.3–1.5 μm wavelength range our detector exhibits a quantum efficiency of 5–10%. The detector photoresponse voltage pulse duration was measured to be about 150 ps with jitter of 35 ps and both of them were limited mostly by our measurement equipment. In terms of quantum efficiency, dark counts level, speed of operation the detector surpasses all semiconductor counterparts and was successfully applied for CMOS integrated circuits diagnostics. |
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0167-9317 |
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no |
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Serial |
1511 |
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Author |
Słysz, W.; Węgrzecki, M.; Bar, J.; Grabiec, P.; Górska, M.; Zwiller, V.; Latta, C.; Bohi, P.; Milostnaya, I.; Minaeva, O.; Antipov, A.; Okunev, O.; Korneev, A.; Smirnov, K.; Voronov, B.; Kaurova, N.; Gol’tsman, G.; Pearlman, A.; Cross, A.; Komissarov, I.; Verevkin, A.; Sobolewski, R. |
Title |
Fiber-coupled single-photon detectors based on NbN superconducting nanostructures for practical quantum cryptography and photon-correlation studies |
Type |
Journal Article |
Year |
2006 |
Publication |
Appl. Phys. Lett. |
Abbreviated Journal |
Appl. Phys. Lett. |
Volume |
88 |
Issue |
26 |
Pages |
261113 (1 to 3) |
Keywords |
SSPD, SNSPD |
Abstract |
We have fabricated and tested a two-channel single-photon detector system based on two fiber-coupled superconducting single-photon detectors (SSPDs). Our best device reached the system quantum efficiency of 0.3% in the 1540-nm telecommunication wavelength with a fiber-to-detector coupling factor of about 30%. The photoresponse consisted of 2.5-ns-wide voltage pulses with a rise time of 250ps and timing jitter below 40ps. The overall system response time, measured as a second-order, photon cross-correlation function, was below 400ps. Our SSPDs operate at 4.2K inside a liquid-helium Dewar, but their optical fiber inputs and electrical outputs are at room temperature. Our two-channel detector system should find applications in practical quantum cryptography and in antibunching-type quantum correlation measurements.
The authors would like to thank Dr. Marc Currie for his assistance in early time-resolved photoresponse measurements and Professor Atac Imamoglu for his support. This work was supported by the Polish Ministry of Science under Project No. 3 T11B 052 26 (Warsaw), RFBR 03-02-17697 and INTAS 03-51-4145 grants (Moscow), CRDF Grant No. RE2-2531-MO-03 (Moscow), RE2-2529-MO-03 (Moscow and Rochester), and US AFOSR FA9550-04-1-0123 (Rochester). Additional funding was provided by the grants from the MIT Lincoln Laboratory and BBN Technologies Corp. |
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0003-6951 |
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1449 |
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Slysz, W.; Wegrzecki, M.; Bar, J.; Grabiec, P.; Gorska, M.; Rieger, E.; Dorenbos, P.; Zwiller, V.; Milostnaya, I.; Minaeva, O.; Antipov, A.; Okunev, O.; Korneev, A.; Smirnov, K.; Voronov, B.; Kaurova, N.; Gol’tsman, G.N.; Kitaygorsky, J.; Pan, D.; Pearlman, A.; Cross, A.; Komissarov, I.; Sobolewski, R. |
Title |
Fiber-coupled NbN superconducting single-photon detectors for quantum correlation measurements |
Type |
Conference Article |
Year |
2007 |
Publication |
Proc. SPIE |
Abbreviated Journal |
Proc. SPIE |
Volume |
6583 |
Issue |
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Pages |
65830J (1 to 11) |
Keywords |
NbN SSPD, SNSPD, superconducting single-photon detectors, single-photon detectors, fiber-coupled optical detectors, quantum correlations, superconducting devices |
Abstract |
We have fabricated fiber-coupled superconducting single-photon detectors (SSPDs), designed for quantum-correlationtype experiments. The SSPDs are nanostructured ( 100-nm wide and 4-nm thick) NbN superconducting meandering stripes, operated in the 2 to 4.2 K temperature range, and known for ultrafast and efficient detection of visible to nearinfrared photons with almost negligible dark counts. Our latest devices are pigtailed structures with coupling between the SSPD structure and a single-mode optical fiber achieved using a micromechanical photoresist ring placed directly over the meander. The above arrangement withstands repetitive thermal cycling between liquid helium and room temperature, and we can reach the coupling efficiency of up to 33%. The system quantum efficiency, measured as the ratio of the photons counted by SSPD to the total number of photons coupled into the fiber, in our early devices was found to be around 0.3 % and 1% for 1.55 &mgr;m and 0.9 &mgr;m photon wavelengths, respectively. The photon counting rate exceeded 250 MHz. The receiver with two SSPDs, each individually biased, was placed inside a transport, 60-liter liquid helium Dewar, assuring uninterrupted operation for over 2 months. Since the receiver’s optical and electrical connections are at room temperature, the set-up is suitable for any applications, where single-photon counting capability and fast count rates are desired. In our case, it was implemented for photon correlation experiments. The receiver response time, measured as a second-order photon cross-correlation function, was found to be below 400 ps, with timing jitter of less than 40 ps. |
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Spie |
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Dusek, M.; Hillery, M.S.; Schleich, W.P.; Prochazka, I.; Migdall, A.L.; Pauchard, A. |
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Photon Counting Applications, Quantum Optics, and Quantum Cryptography |
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Serial |
1431 |
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Author |
Gol’tsman, G.; Okunev, O.; Chulkova, G.; Lipatov, A.; Dzardanov, A.; Smirnov, K.; Semenov, A.; Voronov, B.; Williams, C.; Sobolewski, R. |
Title |
Fabrication and properties of an ultrafast NbN hot-electron single-photon detector |
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Journal Article |
Year |
2001 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
Volume |
11 |
Issue |
1 |
Pages |
574-577 |
Keywords |
NbN SSPD, SNSPD |
Abstract |
A new type of ultra-high-speed single-photon counter for visible and near-infrared wavebands based on an ultrathin NbN hot-electron photodetector (HEP) has been developed. The detector consists of a very narrow superconducting stripe, biased close to its critical current. An incoming photon absorbed by the stripe produces a resistive hotspot and causes an increase in the film’s supercurrent density above the critical value, leading to temporary formation of a resistive barrier across the device and an easily measurable voltage pulse. Our NbN HEP is an ultrafast (estimated response time is 30 ps; registered time, due to apparatus limitations, is 150 ps), frequency unselective device with very large intrinsic gain and negligible dark counts. We have observed sequences of output pulses, interpreted as single-photon events for very weak laser beams with wavelengths ranging from 0.5 /spl mu/m to 2.1 /spl mu/m and the signal-to-noise ratio of about 30 dB. |
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1558-2515 |
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1547 |
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Jukna, A.; Kitaygorsky, J.; Pan, D.; Cross, A.; Perlman, A.; Komissarov, I.; Sobolewski, R.; Okunev, O.; Smirnov, K.; Korneev, A.; Chulkova, G.; Milostnaya, I.; Voronov, B.; Gol'tsman, G. |
Title |
Dynamics of hotspot formation in nanostructured superconducting stripes excited with single photons |
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Journal Article |
Year |
2008 |
Publication |
Acta Physica Polonica A |
Abbreviated Journal |
Acta Physica Polonica A |
Volume |
113 |
Issue |
3 |
Pages |
955-958 |
Keywords |
SSPD, SNSPD |
Abstract |
Dynamics of a resistive hotspot formation by near-infrared-wavelength single photons in nanowire-type superconducting NbN stripes was investigated. Numerical simulations of ultrafast thermalization of photon-excited nonequilibrium quasiparticles, their multiplication and out-diffusion from a site of the photon absorption demonstrate that 1.55 μm wavelength photons create in an ultrathin, two-dimensional superconducting film a resistive hotspot with the diameter which depends on the photon energy, and the nanowire temperature and biasing conditions. Our hotspot model indicates that under the subcritical current bias of the 2D stripe, the electric field penetrates the superconductor at the hotspot boundary, leading to suppression of the stripe superconducting properties and accelerated development of a voltage transient across the stripe. |
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no |
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1414 |
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Verevkin, A.; Zhang, J.; Sobolewski, Roman; Lipatov, A.; Okunev, O.; Chulkova, G.; Korneev, A.; Smirnov, K.; Gol'tsman, G. N.; Semenov, A. |
Title |
Detection efficiency of large-active-area NbN single-photon superconducting detectors in the ultraviolet to near-infrared range |
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Journal Article |
Year |
2002 |
Publication |
Appl. Phys. Lett. |
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Volume |
80 |
Issue |
25 |
Pages |
4687-4689 |
Keywords |
NbN SSPD, SNSPD, QE |
Abstract |
We report our studies on spectral sensitivity of meander-type, superconducting NbN thin-film single-photon detectors (SPDs), characterized by GHz counting rates of visible and near-infrared photons and negligible dark counts. Our SPDs exhibit experimentally determined quantum efficiencies ranging from ∼0.2% at the 1.55 μm wavelength to ∼70% at 0.4 μm. Spectral dependences of the detection efficiency (DE) at the 0.4 to 3.0-μm-wavelength range are presented. The exponential character of the DE dependence on wavelength, as well as its dependence versus bias current, is qualitatively explained in terms of superconducting fluctuations in our ultrathin, submicron-width superconducting stripes. The DE values of large-active-area NbN SPDs in the visible range are high enough for modern quantum communications. |
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331 |
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Lipatov, A.; Okunev, O.; Smirnov, K.; Chulkova, G.; Korneev, A.; Kouminov, P.; Gol'tsman, G.; Zhang, J.; Slysz, W.; Verevkin, A.; Sobolewski, R. |
Title |
An ultrafast NbN hot-electron single-photon detector for electronic applications |
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Journal Article |
Year |
2002 |
Publication |
Supercond. Sci. Technol. |
Abbreviated Journal |
Supercond. Sci. Technol. |
Volume |
15 |
Issue |
12 |
Pages |
1689-1692 |
Keywords |
NbN SSPD, SNSPD, QE, jitter, dark counts |
Abstract |
We present the latest generation of our superconducting single-photon detector (SPD), which can work from ultraviolet to mid-infrared optical radiation wavelengths. The detector combines a high speed of operation and low jitter with high quantum efficiency (QE) and very low dark count level. The technology enhancement allows us to produce ultrathin (3.5 nm thick) structures that demonstrate QE hundreds of times better, at 1.55 μm, than previous 10 nm thick SPDs. The best, 10 × 10 μm2, SPDs demonstrate QE up to 5% at 1.55 μm and up to 11% at 0.86 μm. The intrinsic detector QE, normalized to the film absorption coefficient, reaches 100% at bias currents above 0.9 Ic for photons with wavelengths shorter than 1.3 μm. |
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0953-2048 |
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1533 |
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Zhang, J.; Pearlman, A.; Slysz, W.; Verevkin, A.; Sobolewski, R.; Wilsher, K.; Lo, W.; Okunev, O.; Korneev, A.; Kouminov, P.; Chulkova, G.; Gol’tsman, G. N. |
Title |
A superconducting single-photon detector for CMOS IC probing |
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Conference Article |
Year |
2003 |
Publication |
Proc. 16-th LEOS |
Abbreviated Journal |
Proc. 16-th LEOS |
Volume |
2 |
Issue |
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Pages |
602-603 |
Keywords |
NbN SSPD, SNSPD |
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In this paper, a novel, time-resolved, NbN-based, superconducting single-photon detector (SSPD) has been developed for probing CMOS integrated circuits (ICs) using photon emission timing analysis (PETA). |
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The 16th Annual Meeting of the IEEE Lasers and Electro-Optics Society, 2003. LEOS 2003. |
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1510 |
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Svechnikov, S. I.; Okunev, O. V.; Yagoubov, P. A.; Gol'tsman, G. N.; Voronov, B. M.; Cherednichenko, S. I.; Gershenzon, E. M.; Gerecht, E.; Musante, C. F.; Wang, Z.; Yngvesson, K. S. |
Title |
2.5 THz NbN hot electron mixer with integrated tapered slot antenna |
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Journal Article |
Year |
1997 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
Volume |
7 |
Issue |
2 |
Pages |
3548-3551 |
Keywords |
NbN HEB mixers |
Abstract |
A Hot Electron Bolometer (HEB) mixer for 2.5 THz utilizing a NbN thin film device, integrated with a Broken Linearly Tapered Slot Antenna (BLTSA), has been fabricated and is presently being tested. The NbN HEB device and the antenna were fabricated on a SiO2membrane. A 0.5 micrometer thick SiO2layer was grown by rf magnetron reactive sputtering on a GaAs wafer. The HEB device (phonon-cooled type) was produced as several parallel strips, 1 micrometer wide, from an ultrathin NbN film 4-7 nm thick, that was deposited onto the SiO2layer by dc magnetron reactive sputtering. The BLTSA was photoetched in a multilayer Ti-Au metallization. In order to strengthen the membrane, the front-side of the wafer was coated with a 5 micrometer thick polyimide layer just before the membrane formation. The last operation was anisotropic etching of the GaAs in a mixture of HNO3and H2O2. |
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1051-8223 |
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1595 |
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