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Verevkin, A. A.; Ptitsina, N. G.; Chulcova, G. M.; Gol'tsman, G. N.; Gershenzon, E. M.; Yngvesson, K. S. |
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Direct measurements of energy relaxation time of electrons in AlGaAs/GaAs heterostructures under quasi-equilibrium conditions |
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1996 |
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Surface Science |
Abbreviated Journal |
Surface Science |
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361-362 |
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569-573 |
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2DEG, AlGaAs/GaAs heterostructures |
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Abstract |
For the first time, results are presented of a direct measurement of the energy relaxation time τε of 2D electrons in an AlGaAs/GaAs heterojunction at T = 1 and 5–20 K. A weak temperature dependence of τε for the T > 4K range and a linear temperature dependence of the reciprocal of τε for T < 4K have been observed. The linear dependence τε−1 ≈ T in the Bloch-Gruneisen regime is direct evidence of the predominance of the piezo-electric mechanism of electron-phonon interaction in non-elastic electron scattering processes. The values of τε in this regime are in very good agreement with the results of the Karpus theory. At higher temperatures, where the deformation-potential scattering becomes noticeable, a substantial disagreement between the experimental data and the theoretical results is observed. |
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0039-6028 |
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1609 |
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Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Goltsman, G. N.; Gershenson, E. M.; Yngvesson, K. S. |
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Title |
Direct measurements of electron energy relaxation times at an AlGaAs/GaAs heterointerface in the optical phonon scattering range |
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Conference Article |
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1997 |
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Proc. 4-th Int. Semicond. Device Research Symp. |
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Proc. 4-th Int. Semicond. Device Research Symp. |
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55-58 |
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2DEG, AlGaAs/GaAs heterostructures |
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1602 |
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Verevkin, A. A.; Ptitsina, N. G.; Chulcova, G. M.; Gol'Tsman, G. N.; Gershenzon, E. M.; Yngvesson, K. S. |
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Title |
Determination of the limiting mobility of a two-dimensional electron gas in AlxGa1-xAs/GaAs heterostructures and direct measurement of the energy relaxation time |
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Journal Article |
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1996 |
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Phys. Rev. B Condens. Matter. |
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Phys. Rev. B Condens. Matter. |
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53 |
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12 |
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R7592-R7595 |
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2DEG, AlGaAs/GaAs heterostructures |
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We present results for a method to measure directly the energy relaxation time (τe) for electrons in a single AlxGa1−xAs/GaAs heterojunction; measurements were performed from 1.6 to 15 K under quasiequilibrium conditions. We find τeαT−1 below 4 K, and τe independent of T above 4 K. We have also measured the energy-loss rate, ⟨Q⟩, by the Shubnikov-de Haas technique, and find ⟨Q⟩α(T3e−T3) for T<~4.2 K; Te is the electron temperature. The values and temperature dependence of τe and ⟨Q⟩ for T<4 K agree with calculations based on piezoelectric and deformation potential acoustic phonon scattering. At 4.2 K, we can also estimate the momentum relaxation time, τm, from our measured τe. This leads to a preliminary estimate of the phonon-limited mobility at 4.2 K of μ=3×107 cm2/Vs (ns=4.2×1011 cm−2), which agrees well with published numerical calculations, as well as with an earlier indirect estimate based on measurements on a sample with much higher mobility. |
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0163-1829 |
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PMID:9982274 |
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1612 |
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Gershenzon, E. M.; Gurvich, Yu. A.; Orlova, S. L.; Ptitsina, N. G. |
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Title |
Cyclotron resonance of electrons in Ge in a quantizing magnetic field in the case of inelastic scattering by acoustic phonons |
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Journal Article |
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1975 |
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Sov. Phys. JETP |
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Sov. Phys. JETP |
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40 |
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2 |
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311-315 |
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Ge, cyclotron resonance |
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Results are presented of an experimental study of the linewidth of cyclotron resonance under strong quantization conditions on the scattering of electrons by acoustic phonons. The measurements were performed in the 2....{).4 mm wavelength range at temperatures between 10 and 1.4 OK. A number of singularities were observed in the temperature and frequency dependences of the cyclotron linewidth. These can be ascribed to the effect of inhomogeneous broadening due to nonparabolicity of the electron spectrum, which is renormalized as a result of interaction with acoustic phonons. |
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1768 |
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Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G. |
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Cross section for binding of free carriers into excitons in germanium |
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1981 |
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JETP Lett. |
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JETP Lett. |
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33 |
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11 |
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574 |
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Ge, excitons, photoconductivity |
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1718 |
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