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Verevkin, A. A., Ptitsina, N. G., Smirnov, K. V., Goltsman, G. N., Gershenson, E. M., & Yngvesson, K. S. (1997). Direct measurements of electron energy relaxation times at an AlGaAs/GaAs heterointerface in the optical phonon scattering range. In Proc. 4-th Int. Semicond. Device Research Symp. (pp. 55–58).
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Kitaeva, G. K., Kornienko, V. V., Kuznetsov, K. A., Pentin, I. V., Smirnov, K. V., & Vakhtomin, Y. B. (2019). Direct detection of the idler THz radiation generated by spontaneous parametric down-conversion. Opt. Lett., 44(5), 1198–1201.
Abstract: We study parametric down-conversion (PDC) of optical laser radiation in the strongly frequency non-degenerate regime which is promising for the generation of quantum-correlated pairs of extremely different spectral ranges, the optical and the terahertz (THz) ones. The possibility to detect tenuous THz-frequency photon fluxes generated under low-gain spontaneous PDC is demonstrated using a hot electron bolometer. Then experimental dependences of the THz radiation power on the detection angle and on the pump intensity are analyzed.
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Zolotov, P. I., Divochiy, A. V., Vakhtomin, Y. B., Morozov, P. V., Seleznev, V. A., & Smirnov, K. V. (2017). Development of high-effective superconducting single-photon detectors aimed for mid-IR spectrum range. In J. Phys.: Conf. Ser. (Vol. 917, 062037).
Abstract: We report on development of superconducting single-photon detectors (SSPD) with high intrinsic quantum efficiency in the wavelength range 1.31 – 3.3 μm. By optimization of the NbN film thickness and its compound, we managed to improve detection efficiency of the detectors in the range up to 3.3 μm. Optimized devices showed intrinsic quantum efficiencies as high as 10% at mid-IR range.
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Romanov, N. R., Zolotov, P. I., & Smirnov, K. V. (2019). Development of disordered ultra-thin superconducting vanadium nitride films. In Proc. 8th Int. Conf. Photonics and Information Optics (pp. 425–426).
Abstract: We present the results of development and research of superconducting vanadium nitride VN films ~10 nm thick having different level of disorder. It is showed that both silicon substrate temperature T sub in process of magnetron sputtering and total gas pressure P affect superconducting transition temperature of sputtered films and R 300 /R 20 ratio defining their level of disorder. VN films suitable for development of superconducting single-photon detectors on their basis are obtained.
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Korneeva, Y. P., Trifonov, A. V., Vakhtomin, Y. B., & Smirnov, K. V. (2011). Design of resonator for superconducting single-photon detector. Rus. J. Radio Electron., (12).
Abstract: A resonator for superconducting single-photon detector is designed. Near 60% coupling with a radiation propagating from a dielectric substrate of optical fiber is demonstrated to be achieved for typical values of the detector’s film sheet resistance.
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