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Gershenson, E. M.; Gol'tsman, G. N.; Elant'ev, A. I.; Kagane, M. L.; Multanovskii, V. V.; Ptitsina, N. G. |
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Use of submillimeter backward-wave tube spectroscopy in determination of the chemical nature and concentration of residual impurities in pure semiconductors |
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1983 |
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Sov. Phys. Semicond. |
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Sov. Phys. Semicond. |
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17 |
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8 |
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908-913 |
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BWO spectroscopy, pure semiconductors, residual impurities |
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Применение субмиллиметровой ЛОВ спектроскопии для определения химической природы и концентрации примесей в чистых полупроводниках |
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1714 |
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Dube, I.; Jiménez, D.; Fedorov, G.; Boyd, A.; Gayduchenko, I.; Paranjape, M.; Barbara, P. |
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Understanding the electrical response and sensing mechanism of carbon-nanotube-based gas sensors |
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Journal Article |
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2015 |
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Carbon |
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Carbon |
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87 |
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330-337 |
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carbon nanotubes, CNT detectors, field effect transistors, FET |
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Gas sensors based on carbon nanotube field effect transistors (CNFETs) have outstanding sensitivity compared to existing technologies. However, the lack of understanding of the sensing mechanism has greatly hindered progress on calibration standards and customization of these nano-sensors. Calibration requires identifying fundamental transistor parameters and establishing how they vary in the presence of a gas. This work focuses on modeling the electrical response of CNTFETs in the presence of oxidizing (NO2) and reducing (NH3) gases and determining how the transistor characteristics are affected by gas-induced changes of contact properties, such as the Schottky barrier height and width, and by the doping level of the nanotube. From the theoretical fits of the experimental transfer characteristics at different concentrations of NO2 and NH3, we find that the CNTFET response can be modeled by introducing changes in the Schottky barrier height. These changes are directly related to the changes in the metal work function of the electrodes that we determine experimentally, independently, with a Kelvin probe. Our analysis yields a direct correlation between the ON – current and the changes in the electrode metal work function. Doping due to molecules adsorbed at the carbon-nanotube/metal interface also affects the transfer characteristics. |
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0008-6223 |
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1778 |
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Gershenzon, E. M.; Gol’tsman, G. N.; Dzardanov, A. L.; Zorin, M. A. |
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Ultrafast superconductive switch |
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1991 |
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IEEE Trans. Magn. |
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IEEE Trans. Magn. |
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27 |
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2 |
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2844-2846 |
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Nb superconducting switch |
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The transition from superconductive to resistive state caused by infrared radiation and bias current pulses was investigated in order to minimize switching time tau and driving power W. Experimental results for Nb microstrips confirm the correctness of calculations based on the model of electron heating. For Nb switches, tau measured directly is 0.3-0.8 ns for radiation pulses and 1-3 ns for bias current pulses at T=4.2 K, while for YBaCuO switches at T=77 K it is expected to be several picoseconds. For an YBaCuO sample with the dimensions of 5*2*0.15 mu m/sup 2/, W was 10 mW, and it can be further reduced to the order of several microwatts by decreasing the volume of the sample. |
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1941-0069 |
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1680 |
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Sobolewski, R.; Zhang, J.; Slysz, W.; Pearlman, A.; Verevkin, A.; Lipatov, A.; Okunev, O.; Chulkova, G.; Korneev, A.; Smirnov, K.; Kouminov, P.; Voronov, B.; Kaurova, N.; Drakinsky, V.; Goltsman, G. N. |
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Ultrafast superconducting single-photon optical detectors |
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2003 |
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Proc. SPIE |
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Proc. SPIE |
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5123 |
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1-11 |
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NbN SSPD, SNSPD |
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We present a new class of single-photon devices for counting of both visible and infrared photons. Our superconducting single-photon detectors (SSPDs) are characterized by the intrinsic quantum efficiency (QE) reaching up to 100%, above 10 GHz counting rate, and negligible dark counts. The detection mechanism is based on the photon-induced hotspot formation and subsequent appearance of a transient resistive barrier across an ultrathin and submicron-wide superconducting stripe. The devices are fabricated from 3.5-nm-thick NbN films and operate at 4.2 K, well below the NbN superconducting transition temperature. Various continuous and pulsed laser sources in the wavelength range from 0.4 μm up to >3 μm were implemented in our experiments, enabling us to determine the detector QE in the photon-counting mode, response time, and jitter. For our best 3.5-nm-thick, 10×10 μm2-area devices, QE was found to reach almost 100% for any wavelength shorter than about 800 nm. For longer-wavelength (infrared) radiation, QE decreased exponentially with the photon wavelength increase. Time-resolved measurements of our SSPDs showed that the system-limited detector response pulse width was below 150 ps. The system jitter was measured to be 35 ps. In terms of the counting rate, jitter, and dark counts, the NbN SSPDs significantly outperform their semiconductor counterparts. Already identifeid and implemented applications of our devices range from noninvasive testing of semiconductor VLSI circuits to free-space quantum communications and quantum cryptography. |
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SPIE |
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Spigulis, J.; Teteris, J.; Ozolinsh, M.; Lusis, A. |
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Advanced Optical Devices, Technologies, and Medical Applications |
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1513 |
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Gol'tsman, G. N.; Korneev, A.; Rubtsova, I.; Milostnaya, I.; Chulkova, G.; Minaeva, O.; Smirnov, K.; Voronov, B.; Słysz, W.; Pearlman, A.; Verevkin, A.; Sobolewski, R. |
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Ultrafast superconducting single-photon detectors for near-infrared-wavelength quantum communications |
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2005 |
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Phys. Stat. Sol. (C) |
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Phys. Stat. Sol. (C) |
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2 |
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5 |
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1480-1488 |
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NbN SSPD, SNSPD |
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We present our progress on the research and development of NbN superconducting single‐photon detectors (SSPD's) for ultrafast counting of near‐infrared photons for secure quantum communications. Our SSPD's operate in the quantum detection mode based on the photon‐induced hotspot formation and subsequent development of a transient resistive barrier across an ultrathin and submicron‐width superconducting stripe. The devices are fabricated from 4‐nm‐thick NbN films and kept in the 4.2‐ to 2‐K temperature range. The detector experimental quantum efficiency in the photon‐counting mode reaches above 40% for the visible light and up to 30% in the 1.3‐ to 1.55‐µm wavelength range with dark counts below 0.01 per second. The experimental real‐time counting rate is above 2 GHz and is limited by our readout electronics. The SSPD's timing jitter is below 18 ps, and the best‐measured value of the noise‐equivalent power (NEP) is 5 × 10–21 W/Hz1/2 at 1.3 µm. In terms of quantum efficiency, timing jitter, and maximum counting rate, our NbN SSPD's significantly outperform semiconductor avalanche photodiodes and photomultipliers in the 1.3‐ to 1.55‐µm range. |
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1610-1634 |
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1479 |
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