| Records |
| Author |
Engel, Andreas; Aeschbacher, Adrian; Inderbitzin, Kevin; Schilling, Andreas; Il'in, Konstantin; Hofherr, Matthias; Siegel, Michael; Semenov, Alexei; Hübers, Heinz-Wilhelm |
Title  |
Tantalum nitride superconducting single-photon detectors with low cut-off energy |
Type |
Journal Article |
| Year |
2011 |
Publication |
arXiv |
Abbreviated Journal |
arXiv |
| Volume |
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Issue |
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Pages |
9 |
| Keywords |
SSPD |
| Abstract |
Materials with a small superconducting energy gap favor a high detection efficiency of low-energy photons in superconducting nanowire single-photon detectors. We developed a TaN detector with smaller gap and lower density of states at the Fermi energy than in comparable NbN devices, while other relevant parameters remain essentially unchanged. This results in a reduction of the minimum photon energy required for direct detection to $\approx1/3$ as compared to NbN. |
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arXiv:1110.4576 |
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RPLAB @ gujma @ |
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687 |
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Yang, J.K.W.; Kerman, A.J.; Dauler, E.A.; Cord, B.; Anant, V.; Molnar, R.J.; Berggren, K.K. |
| Title |
Suppressed critical current in superconducting nanowire single-photon detectors with high fill-factors |
Type |
Journal Article |
| Year |
2009 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
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| Volume |
19 |
Issue |
3 |
Pages |
318-322 |
| Keywords |
SNSPD |
| Abstract |
In this work we present a new fabrication process that enabled the fabrication of superconducting nanowire single photon detectors SNSPD with fill-factors as high as 88% with gaps between nanowires as small as 12 nm. This fabrication process combined high-resolution electron-beam lithography with photolithography. Although this work was motivated by the potential of increased detection efficiency with higher fill-factor devices, test results showed an unexpected systematic suppression in device critical currents with increasing fill-factor. |
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RPLAB @ gujma @ |
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677 |
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| Author |
Goltsman, Gregory |
| Title |
Superconducting thin film nanostructures as terahertz and infrared heterodyne and direct detectors |
Type |
Conference Article |
| Year |
2017 |
Publication |
16th ISEC |
Abbreviated Journal |
16th ISEC |
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Issue |
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Pages |
Th-I-QTE-03 (1 to 3) |
| Keywords |
waveguide SSPD, SNSPD |
| Abstract |
We present our recent achievements in the development of superconducting nanowire single-photon detectors (SNSPDs) integrated with optical waveguides on a chip. We demonstrate both single-photon counting with up to 90% on-chipquantum-efficiency (OCDE), and the heterodyne mixing with a close to the quantum limit sensitivity at the telecommunication wavelength using single device. |
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IEEE/CSC & ESAS Superconductivity News Forum |
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no |
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1745 |
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| Author |
Goltsman, G. |
| Title |
Superconducting thin film as infrared heterodyne and direct detectors |
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Conference Article |
| Year |
2017 |
Publication |
16th ISEC |
Abbreviated Journal |
16th ISEC |
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Pages |
1-3 |
| Keywords |
optical waveguide SSPD, SNSPD |
| Abstract |
We present our recent achievements in the development of superconducting nanowire single-photon detectors (SNSPDs) integrated with optical waveguides on a chip. We demonstrate both single-photon counting with up to 90% on-chip-quantum-efficiency (OCDE), and the heterodyne mixing with a close to the quantum limit sensitivity at the telecommunication wavelength using single device. |
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no |
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8314188 |
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1323 |
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Korneev, A.; Minaeva, O.; Rubtsova, I.; Milostnaya, I.; Chulkova, G.; Voronov, B.; Smirnov, K.; Seleznev, V.; Gol'tsman, G.; Pearlman, A.; Slysz, W.; Cross, A.; Alvarez, P.; Verevkin, A.; Sobolewski, R. |
| Title |
Superconducting single-photon ultrathin NbN film detector |
Type |
Journal Article |
| Year |
2005 |
Publication |
Quantum Electronics |
Abbreviated Journal |
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| Volume |
35 |
Issue |
8 |
Pages |
698-700 |
| Keywords |
NbN SSPD, SNSPD |
| Abstract |
Superconducting single-photon ultrathin NbN film detectors are studied. The development of manufacturing technology of detectors and the reduction of their operating temperature down to 2 K resulted in a considerable increase in their quantum efficiency, which reached in the visible region (at 0.56 μm) 30%—40%, i.e., achieved the limit determined by the absorption coefficient of the film. The quantum efficiency exponentially decreases with increasing wavelength, being equal to ~20% at 1.55 μm and ~0.02% at 5 μm. For the dark count rate of ~10-4s-1, the experimental equivalent noise power was 1.5×10-20 W Hz-1/2; it can be decreased in the future down to the record low value of 5×10-21 W Hz-1/2. The time resolution of the detector is 30 ps. |
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Сверхпроводящий однофотонный детектор на основе ультратонкой пленки NbN |
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no |
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383 |
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