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Hübers, H.-W.; Schubert, J.; Krabbe, A.; Birk, M.; Wagner, G.; Semenov, A.; Gol’tsman, G.; Voronov, B.; Gershenzon, E. |
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Title  |
Parylene anti-reflection coating of a quasi-optical hot-electron-bolometric mixer at terahertz frequencies |
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Journal Article |
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2001 |
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Infrared Physics & Technology |
Abbreviated Journal |
Infrared Physics & Technology |
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42 |
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1 |
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41-47 |
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Keywords |
NbN HEB mixers, anti-reflection coating |
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Parylene C was investigated as anti-reflection coating for silicon at terahertz frequencies. Measurements with a Fourier-transform spectrometer show that the transmittance of pure silicon can be improved by about 30% when applying a layer of Parylene C with a quarter wavelength optical thickness. The 10% bandwidth of this coating extends from 1.5 to 3 THz for a center frequency of 2.3–2.5 THz, where the transmittance is constant. Heterodyne measurements demonstrate that the noise temperature of a hot-electron-bolometric mixer can be reduced significantly by coating the silicon lens of the hybrid antenna with a quarter wavelength Parylene C layer. Compared to the same mixer with an uncoated lens the improvement is about 30% at a frequency of 2.5 THz. |
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1350-4495 |
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1548 |
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Kitaygorsky, J.; Zhang, J.; Verevkin, A.; Sergeev, A.; Korneev, A.; Matvienko, V.; Kouminov, P.; Smirnov, K.; Voronov, B.; Gol'tsman, G.; Sobolewski, R. |
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Title |
Origin of dark counts in nanostructured NbN single-photon detectors |
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Journal Article |
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2005 |
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IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
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15 |
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2 |
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545-548 |
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SSPD dark counts, SNSPD, dark counts rate |
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We present our study of dark counts in ultrathin (3.5 to 10 nm thick), narrow (120 to 170 nm wide) NbN superconducting stripes of different lengths. In experiments, where the stripe was completely isolated from the outside world and kept at temperature below the critical temperature Tc, we detected subnanosecond electrical pulses associated with the spontaneous appearance of the temporal resistive state. The resistive state manifested itself as generation of phase-slip centers (PSCs) in our two-dimensional superconducting stripes. Our analysis shows that not far from Tc, PSCs have a thermally activated nature. At lowest temperatures, far below Tc, they are created by quantum fluctuations. |
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1057 |
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Tret’yakov, I. V.; Ryabchun, S. A.; Kaurova, N. S.; Larionov, P. A.; Lobastova, A. A.; Voronov, B. M.; Finkel, M. I.; Gol’tsman, G. N. |
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Title |
Optimum absorbed heterodyne power for superconducting NbN hot-electron bolometer mixer |
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Journal Article |
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2010 |
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Tech. Phys. Lett. |
Abbreviated Journal |
Tech. Phys. Lett. |
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36 |
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12 |
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1103-1105 |
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Keywords |
NbN HEB mixer |
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Absorbed heterodyne power has been measured in a low-noise broadband hot-electron bolometer (HEB) mixer for the terahertz range, operating on the effect of electron heating in the resistive state of an ultrathin superconducting NbN film. It is established that the optimum absorbed heterodyne power for the HEB mixer operating at 2.5 THz is about 100 nW. |
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1063-7850 |
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1389 |
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Hajenius, M.; Yang, Z. Q.; Gao, J. R.; Baselmans, J. J. A.; Klapwijk, T. M.; Voronov, B.; Gol'tsman, G. |
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Title |
Optimized sensitivity of NbN hot electron bolometer mixers by annealing |
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Journal Article |
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2007 |
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IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
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17 |
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2 |
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399-402 |
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Keywords |
NbN HEB mixers |
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We report that the heterodyne sensitivity of superconducting hot-electron bolometers (HEBs) increases by 25-30% after annealing at 85degC in high vacuum. The devices studied are twin-slot antenna coupled mixers with a small area NbN bridge of 1 mum times 0.15 mum, above which there is a SiO 2 passivation layer. The mixer noise temperature, gain, and resistance versus temperature curve of a HEB before and after annealing are compared and analysed. We show that the annealing reduces the intrinsic noise of the mixer by 37% and makes the superconducting transition of the bridge and the contacts sharper. We argue that the reduction ofthe noise is mainly due to the improvement of the transparency of the contact/film interface. The lowest receiver noise temperature of 700 K is measured at a local oscillator frequency of 1.63 THz and at a bath temperature of 4.2 K. |
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1051-8223 |
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1426 |
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Gerecht, E.; Musante, C. F.; Wang, Z.; Yngvesson, K. S.; Mueller, E. R.; Waldman, J.; Gol'tsman, G. N.; Voronov, B. M.; Cherednichenco, S. I.; Svechnikov, S. I.; Yagoubov, P. A.; Gershenzon, E. M. |
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Optimization of hot eleciron bolometer mixing efficiency in NbN at 119 micrometer wavelength |
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Conference Article |
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Year |
1996 |
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Proc. 7th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 7th Int. Symp. Space Terahertz Technol. |
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584-600 |
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NbN HEB mixers |
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We describe an investigation of a NbN HEB mixer for 2.5 THz. An intrinsic conversion loss of 23 dB has been measured with a two-laser measurement technique. The conversion loss was limited by the LO power available and is expected to decrease to 10 dB or less when sufficient LO power is available. For this initial experiment we used a prototype device which is directly coupled to the laser beams. We present results for a back-short technique that improves the optical coupling to the device and describe our progress for an antenna-coupled device with a smaller dimension. Based on our measured data for conversion loss and device output noise level, we predict that NbN HEB mixers will be capable of achieving DSB receiver noise temperatures of ten times the quantum noise limit in the THz range. |
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1616 |
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Cherednichenko, S.; Khosropanah, P.; Berg, T.; Merkel, H.; Kollberg, E.; Drakinskiy, V.; Voronov, B.; Gol’tsman, G. |
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Title |
Optimization of HEB mixer for the Herschel Space Observatory |
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2004 |
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Proc. 15th Int. Symp. Space Terahertz Technol. |
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Proc. 15th Int. Symp. Space Terahertz Technol. |
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16 |
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NbN HEB mixers, applications |
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A mixer development for the HIFI instrument of the Herschel Space Observatory has come to the final stage. In our paper and conference presentation we will describe the most important details of the Band 6 Low and High Mixer Unit design. Special attention will be given to the optimization of the hot- electron bolometer mixer chip, which is based on 3.5nm NbN superconducting film on silicon. As the HEB’s local oscillator power requirements depend on the bolometer size, we have compared mixer noise temperature for different bolometer width- to- length ratio. A trade- off between mixer performance and local oscillator power requirements results in the mixer units equipped with optimized mixer chips, providing the largest coverage of the Band6 RF band with the lowest possible receiver noise. A short account of the beam pattern measurements of Band6 mixers will be given as well. |
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1490 |
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Gerecht, E.; Musante, C. F.; Yngvesson, K. S.; Waldman, J.; Gol'tsman, G. N.; Yagoubov, P. A.; Voronov, B. M.; Gershenzon, E. M. |
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Optical coupling and conversion gain for NbN HEB mixer at THz frequencies |
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Conference Article |
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1997 |
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Proc. 4-th Int. Semicond. Device Research Symp. |
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Proc. 4-th Int. Semicond. Device Research Symp. |
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47-50 |
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NbN HEB mixers |
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Charlottesville, Virginia |
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1601 |
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Kovalyuk, V.; Ferrari, S.; Kahl, O.; Semenov, A.; Shcherbatenko, M.; Lobanov, Y.; Ozhegov, R.; Korneev, A.; Kaurova, N.; Voronov, B.; Pernice, W.; Gol'tsman, G. |
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On-chip coherent detection with quantum limited sensitivity |
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2017 |
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Sci Rep |
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Sci Rep |
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7 |
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1 |
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4812 |
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waveguide, SSPD, SNSPD |
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While single photon detectors provide superior intensity sensitivity, spectral resolution is usually lost after the detection event. Yet for applications in low signal infrared spectroscopy recovering information about the photon's frequency contributions is essential. Here we use highly efficient waveguide integrated superconducting single-photon detectors for on-chip coherent detection. In a single nanophotonic device, we demonstrate both single-photon counting with up to 86% on-chip detection efficiency, as well as heterodyne coherent detection with spectral resolution f/f exceeding 10(11). By mixing a local oscillator with the single photon signal field, we observe frequency modulation at the intermediate frequency with ultra-low local oscillator power in the femto-Watt range. By optimizing the nanowire geometry and the working parameters of the detection scheme, we reach quantum-limited sensitivity. Our approach enables to realize matrix integrated heterodyne nanophotonic devices in the C-band wavelength range, for classical and quantum optics applications where single-photon counting as well as high spectral resolution are required simultaneously. |
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National Research University Higher School of Economics, Moscow, 101000, Russia. ggoltsman@hse.ru |
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2045-2322 |
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PMID:28684752; PMCID:PMC5500578 |
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RPLAB @ kovalyuk @ |
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1129 |
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Matyushkin, Y.; Kaurova, N.; Voronov, B.; Goltsman, G.; Fedorov, G. |
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On chip carbon nanotube tunneling spectroscopy |
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2020 |
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Fullerenes, Nanotubes and Carbon Nanostructures |
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28 |
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1 |
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50-53 |
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carbon nanotubes, CNT, scanning tunneling microscope, STM |
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We report an experimental study of the band structure of individual carbon nanotubes (SCNTs) based on investigation of the tunneling density of states, i.e. tunneling spectroscopy. A common approach to this task is to use a scanning tunneling microscope (STM). However, this approach has a number of drawbacks, to overcome which, we propose another method – tunneling spectroscopy of SCNTs on a chip using a tunneling contact. This method is simpler, cheaper and technologically advanced than the STM. Fabrication of a tunnel contact can be easily integrated into any technological route, therefore, a tunnel contact can be used, for example, as an additional tool in characterizing any devices based on individual CNTs. In this paper we demonstrate a simple technological procedure that results in fabrication of good-quality tunneling contacts to carbon nanotubes. |
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Taylor & Francis |
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doi:10.1080/1536383X.2019.1671365 |
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1269 |
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Zhang, J.; Boiadjieva, N.; Chulkova, G.; Deslandes, H.; Gol'tsman, G. N.; Korneev, A.; Kouminov, P.; Leibowitz, M.; Lo, W.; Malinsky, R.; Okunev, O.; Pearlman, A.; Slysz, W.; Smirnov, K.; Tsao, C.; Verevkin, A.; Voronov, B.; Wilsher, K.; Sobolewski, R. |
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Noninvasive CMOS circuit testing with NbN superconducting single-photon detectors |
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2003 |
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Electron. Lett. |
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Electron. Lett. |
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39 |
Issue |
14 |
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1086-1088 |
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NbN SSPD, SNSPD, applications |
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The 3.5 nm thick-film, meander-structured NbN superconducting single-photon detectors have been implemented in the CMOS circuit-testing system based on the detection of near-infrared photon emission from switching transistors and have significantly improved the performance of the system. Photon emissions from both p- and n-MOS transistors have been observed. |
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0013-5194 |
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