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| Author | Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Gol’tsman, G. N.; Gershenzon, E. M.; Ingvesson, K. S. | ||||
Title  |
Direct measurements of energy relaxation times on an AlGaAs/GaAs heterointerface in the range 4.2–50 K | Type | Journal Article | ||
| Year | 1996 | Publication | JETP Lett. | Abbreviated Journal | JETP Lett. |
| Volume | 64 | Issue | 5 | Pages | 404-409 |
| Keywords | 2DEG, AlGaAs/GaAs heterostructures | ||||
| Abstract | The temperature dependence of the energy relaxation time τe (T) of a two-dimensional electron gas at an AlGaAs/GaAs heterointerface is measured under quasiequilibrium conditions in the region of the transition from scattering by acoustic phonons to scattering with the participation of optical phonons. The temperature interval of constant τe, where scattering by the deformation potential predominates, is determined. In the preceding, low-temperature region, where piezoacoustic and deformation-potential-induced scattering processes coexist, τ e decreases slowly with increasing temperature. Optical phonons start to participate in the scattering processes at T∼25 K (the characteristic phonon lifetime was equal to τLOτ4.5 ps). The energy losses calculated from the τe data in a model with an effective nonequilibrium electron temperature agree with the published data obtained under strong heating conditions. | ||||
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| Language | Summary Language | Original Title | |||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 0021-3640 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | http://jetpletters.ru/ps/981/article_14955.shtml (“Прямые измерения времен энергетической релаксации на гетерогранице AlGaAs/GaAs в диапазоне 4.2 – 50 К”) | Approved | no | ||
| Call Number | Serial | 1608 | |||
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| Author | Kitaeva, G. K.; Kornienko, V. V.; Kuznetsov, K. A.; Pentin, I. V.; Smirnov, K. V.; Vakhtomin, Y. B. | ||||
| Title |
Direct detection of the idler THz radiation generated by spontaneous parametric down-conversion | Type | Journal Article | ||
| Year | 2019 | Publication | Opt. Lett. | Abbreviated Journal | Opt. Lett. |
| Volume | 44 | Issue | 5 | Pages | 1198-1201 |
| Keywords | HEB applications | ||||
| Abstract | We study parametric down-conversion (PDC) of optical laser radiation in the strongly frequency non-degenerate regime which is promising for the generation of quantum-correlated pairs of extremely different spectral ranges, the optical and the terahertz (THz) ones. The possibility to detect tenuous THz-frequency photon fluxes generated under low-gain spontaneous PDC is demonstrated using a hot electron bolometer. Then experimental dependences of the THz radiation power on the detection angle and on the pump intensity are analyzed. | ||||
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| Language | Summary Language | Original Title | |||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 0146-9592 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | PMID:30821747 | Approved | no | ||
| Call Number | Serial | 1801 | |||
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| Author | Elezov, M. S.; Ozhegov, R. V.; Goltsman, G. N.; Makarov, V. | ||||
| Title |
Development of the experimental setup for investigation of latching of superconducting single-photon detector caused by blinding attack on the quantum key distribution system | Type | Conference Article | ||
| Year | 2017 | Publication | EPJ Web of Conferences | Abbreviated Journal | EPJ Web of Conferences |
| Volume | 132 | Issue | 2 | Pages | 2 |
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| Abstract | Recently bright-light control of the SSPD has been demonstrated. This attack employed a “backdoor†in the detector biasing scheme. Under bright-light illumination, SSPD becomes resistive and remains “latched†in the resistive state even when the light is switched off. While the SSPD is latched, Eve can simulate SSPD single-photon response by sending strong light pulses, thus deceiving Bob. We developed the experimental setup for investigation of a dependence on latching threshold of SSPD on optical pulse length and peak power. By knowing latching threshold it is possible to understand essential requirements for development countermeasures against blinding attack on quantum key distribution system with SSPDs. |
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| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | RPLAB @ kovalyuk @ | Serial | 1116 | ||
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| Author | Romanov, N. R.; Zolotov, P. I.; Smirnov, K. V. | ||||
| Title |
Development of disordered ultra-thin superconducting vanadium nitride films | Type | Conference Article | ||
| Year | 2019 | Publication | Proc. 8th Int. Conf. Photonics and Information Optics | Abbreviated Journal | Proc. 8th Int. Conf. Photonics and Information Optics |
| Volume | Issue | Pages | 425-426 | ||
| Keywords | VN films | ||||
| Abstract | We present the results of development and research of superconducting vanadium nitride VN films ~10 nm thick having different level of disorder. It is showed that both silicon substrate temperature T sub in process of magnetron sputtering and total gas pressure P affect superconducting transition temperature of sputtered films and R 300 /R 20 ratio defining their level of disorder. VN films suitable for development of superconducting single-photon detectors on their basis are obtained. | ||||
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| Language | Russian | Summary Language | Original Title | ||
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| ISSN | ISBN | 978-5-7262-2536-4 | Medium | ||
| Area | Expedition | Conference | |||
| Notes | http://fioconf.mephi.ru/files/2018/12/FIO2019-Sbornik.pdf | Approved | no | ||
| Call Number | Serial | 1802 | |||
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| Author | Trifonov, A.; Tong, C.-Y. E.; Grimes, P.; Lobanov, Y.; Kaurova, N.; Blundell, R.; Goltsman, G. | ||||
| Title |
Development of A Silicon Membrane-based Multi-pixel Hot Electron Bolometer Receiver | Type | Conference Article | ||
| Year | 2017 | Publication | IEEE Trans. Appl. Supercond. | Abbreviated Journal | IEEE Trans. Appl. Supercond. |
| Volume | 27 | Issue | 4 | Pages | 6 |
| Keywords | Multi-pixel, HEB, silicon-on-insulator, horn array | ||||
| Abstract | We report on the development of a multi-pixel Hot Electron Bolometer (HEB) receiver fabricated using silicon membrane technology. The receiver comprises a 2 × 2 array of four HEB mixers, fabricated on a single chip. The HEB mixer chip is based on a superconducting NbN thin film deposited on top of the silicon-on-insulator (SOI) substrate. The thicknesses of the device layer and handling layer of the SOI substrate are 20 μm and 300 μm respectively. The thickness of the device layer is chosen such that it corresponds to a quarter-wave in silicon at 1.35 THz. The HEB mixer is integrated with a bow-tie antenna structure, in turn designed for coupling to a circular waveguide, |
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| Notes | Approved | no | |||
| Call Number | RPLAB @ kovalyuk @ | Serial | 1111 | ||
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