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Author Smirnov, K. V.; Vachtomin, Yu. B.; Antipov, S. V.; Maslennikov, S. N.; Kaurova, N. S.; Drakinsky, V. N.; Voronov, B. M.; Gol'tsman, G. N.; Semenov, A. D.; Richter, H.; Hubers, H.-W.
Title Noise and gain performance of spiral antenna coupled HEB mixers at 0.7 THz and 2.5 THz Type (up) Conference Article
Year 2003 Publication Proc. 14th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 14th Int. Symp. Space Terahertz Technol.
Volume Issue Pages 405-412
Keywords NbN HEB mixers
Abstract Noise and gain performance of hot electron bolometer (HEB) mixers based on ultrathin superconducting NbN films integrated with a spiral antenna was studied. The noise temperature measurements for two samples with different active area of 3 p.m x 0.24 .tni and 1.3 1..tm x 0.12 1.tm were performed at frequencies 0.7 THz and 2.5 THz. The best receiver noise temperatures 370 K and 1600 K, respectively, have been found at these frequencies. The influence of contact resistance between the superconductor and the antenna terminals on the noise temperature of HEB is discussed. The noise and gain bandwidth of 5GHz and 4.2 GHz, respectively, are demonstrated for similar HEB mixer at 0.75 THz.
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Call Number Serial 1502
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Author Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Goltsman, G. N.; Gershenson, E. M.; Yngvesson, K. S.
Title Direct measurements of electron energy relaxation times at an AlGaAs/GaAs heterointerface in the optical phonon scattering range Type (up) Conference Article
Year 1997 Publication Proc. 4-th Int. Semicond. Device Research Symp. Abbreviated Journal Proc. 4-th Int. Semicond. Device Research Symp.
Volume Issue Pages 55-58
Keywords 2DEG, AlGaAs/GaAs heterostructures
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Call Number Serial 1602
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Author Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Gol'tsman, G. N.; Voronov, B. M.; Gershenzon, E. M.; Yngvesson, K. S.
Title Hot electron bolometer detectors and mixers based on a superconducting-two-dimensional electron gas-superconductor structure Type (up) Conference Article
Year 1997 Publication Proc. 4-th Int. Semicond. Device Research Symp. Abbreviated Journal Proc. 4-th Int. Semicond. Device Research Symp.
Volume Issue Pages 163-166
Keywords S-2DEG-S HEB mixers, detectors, AlGaAs/GaAs heterostructures, NbN
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Call Number Serial 1603
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Author Moshkova, M. A.; Morozov, P. V.; Antipov, A. V.; Vakhtomin, Y. B.; Smirnov, K. V.
Title High-efficiency multi-element superconducting single-photon detector Type (up) Conference Article
Year 2021 Publication Proc. SPIE Abbreviated Journal Proc. SPIE
Volume 11771 Issue Pages 2-8
Keywords PNR SSPD, large active area, detection efficiency
Abstract We present the result of the creation and investigation of the multi-element superconducting single photon detectors, which can recognize the number of photons (up to six) in a short pulse of the radiation at telecommunication wavelengths range. The best receivers coupled with single-mode fiber have the system quantum efficiency of ⁓85%. The receivers have a 100 ps time resolution and a few nanoseconds dead time that allows them to operate at megahertz counting rate. Implementation of the multi-element architecture for creation of the superconducting single photon detectors with increased sensitive area allows to create the high efficiency receivers coupled with multi-mode fibers and with preserving of the all advantages of superconducting photon counters.
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Publisher SPIE Place of Publication Editor Prochazka, I.; Štefaňák, M.; Sobolewski, R.; Gábris, A.
Language Summary Language Original Title
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Area Expedition Conference Quantum Optics and Photon Counting
Notes Approved no
Call Number Serial 1795
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Author Vasilev, D. D.; Malevannaya, E. I.; Moiseev, K. M.; Zolotov, P. I.; Antipov, A. V.; Vakhtomin, Y. B.; Smirnov, K. V.
Title Influence of deposited material energy on superconducting properties of the WSi films Type (up) Conference Article
Year 2020 Publication IOP Conf. Ser.: Mater. Sci. Eng. Abbreviated Journal IOP Conf. Ser.: Mater. Sci. Eng.
Volume 781 Issue Pages 012013 (1 to 6)
Keywords WSi SSPD, SNSPD
Abstract WSi thin films have the advantages for creating SNSPDs with a large active area or array of detectors on a single substrate due to the amorphous structure. The superconducting properties of ultrathin WSi films substantially depends on their structure and thickness as the NbN films. Scientific groups investigating WSi films mainly focused only on changes of their thickness and the ratio of the components on the substrate at room temperature. This paper presents experiments to determine the effect of the bias potential on the substrate, the temperature of the substrate, and the peak power of pulsed magnetron sputtering, which is the equivalent of ionization, a tungsten target, on the surface resistance and superconducting properties of the WSi ultrathin films. The negative effect of the substrate temperature and the positive effect of the bias potential and the ionization coefficient (peak current) allow one to choose the best WSi films formation mode for SNSPD: substrate temperature 297 K, bias potential -60 V, and peak current 3.5 A.
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ISSN 1757-899X ISBN Medium
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Notes Approved no
Call Number Serial 1798
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Author Romanov, N. R.; Zolotov, P. I.; Smirnov, K. V.
Title Development of disordered ultra-thin superconducting vanadium nitride films Type (up) Conference Article
Year 2019 Publication Proc. 8th Int. Conf. Photonics and Information Optics Abbreviated Journal Proc. 8th Int. Conf. Photonics and Information Optics
Volume Issue Pages 425-426
Keywords VN films
Abstract We present the results of development and research of superconducting vanadium nitride VN films ~10 nm thick having different level of disorder. It is showed that both silicon substrate temperature T sub in process of magnetron sputtering and total gas pressure P affect superconducting transition temperature of sputtered films and R 300 /R 20 ratio defining their level of disorder. VN films suitable for development of superconducting single-photon detectors on their basis are obtained.
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Language Russian Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN 978-5-7262-2536-4 Medium
Area Expedition Conference
Notes http://fioconf.mephi.ru/files/2018/12/FIO2019-Sbornik.pdf Approved no
Call Number Serial 1802
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Author Moshkova, M. A.; Divochiy, A. V.; Morozov, P. V.; Antipov, A. V.; Vakhtomin, Yu. B.; Smirnov, K. V.
Title Characterization of topologies of superconducting photon number resolving detectors Type (up) Conference Article
Year 2019 Publication Proc. 8th Int. Conf. Photonics and Information Optics Abbreviated Journal Proc. 8th Int. Conf. Photonics and Information Optics
Volume Issue Pages 465-466
Keywords PNR SSPD
Abstract Comparative analysis for different topologies of superconducting single-photon detectors with ability to resolve up to 4 photons in a short pulse of IR radiation has been carry out. It was developed the detector with a system detection efficiency of ~ 85 % at λ = 1550 nm. The possibility of using such detector to restore photon statistics of a pulsed radiation source was demonstrated.
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Publisher Place of Publication Editor
Language Russian Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
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ISSN ISBN 978-5-7262-2536-4 Medium
Area Expedition Conference
Notes http://fioconf.mephi.ru/files/2018/12/FIO2019-Sbornik.pdf Approved no
Call Number Serial 1803
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Author Kuznetsov, K. A.; Kornienko, V. V.; Vakhtomin, Y. B.; Pentin, I. V.; Smirnov, K. V.; Kitaeva, G. K.
Title Generation and detection of optical-terahertz biphotons via spontaneous parametric downconversion Type (up) Conference Article
Year 2018 Publication Proc. ICLO Abbreviated Journal Proc. ICLO
Volume Issue Pages 303
Keywords NbN HEB applications
Abstract We study spontaneous parametric downconversion (SPDC) in the strongly non-degenerate regime when the idler wave hits the terahertz range. By using the hot-electron bolometer, for the first time the SPDC-generated idler-wave photons were directly detected in the terahertz frequency range. Spectrum of corresponding signal photons was measured using standard technique by the CCD camera. Possible applications of correlated optical-terahertz biphotons are discussed.
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Area Expedition Conference International Conference Laser Optics
Notes Approved no
Call Number Serial 1806
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Author Semenov, A. D.; Hübers, Heinz-Wilhelm; Richter, H.; Birk, M.; Krocka, M.; Mair, U.; Vachtomin, Yu. B.; Finkel, M. I.; Antipov, S. V.; Voronov, B. M.; Smirnov, K. V.; Kaurova, N. S.; Drakinski, V. N.; Gol'tsman, G. N.
Title Superconducting hot-electron bolometer mixer for terahertz heterodyne receivers Type (up) Journal Article
Year 2003 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal
Volume 13 Issue 2 Pages 168-171
Keywords NbN HEB mixers
Abstract We present recent results showing the development of superconducting NbN hot-electron bolometer mixer for German receiver for astronomy at terahertz frequencies and terahertz limb sounder. The mixer is incorporated into a planar feed antenna, which has either logarithmic spiral or double-slot configuration, and backed on a silicon lens. The hybrid antenna had almost frequency independent and symmetric radiation pattern slightly broader than expected for a diffraction limited antenna. At 2.5 THz the best 2200 K double side-band receiver noise temperature was achieved across a 1 GHz intermediate frequency bandwidth centred at 1.5 GHz. For this operation regime, a receiver conversion efficiency of -17 dB was directly measured and the loss budget was evaluated. The mixer response was linear at load temperatures smaller than 400 K. Implementation of the MgO buffer layer on Si resulted in an increased 5.2 GHz gain bandwidth. The receiver was tested in the laboratory environment by measuring a methanol emission line at 2.5 THz.
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Notes Approved no
Call Number Serial 343
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Author Shangina, E. L.; Smirnov, K. V.; Morozov, D. V.; Kovalyuk, V. V.; Goltsman, G. N.; Verevkin, A. A.; Toropov, A. I.; Mauskopf, P.
Title Concentration dependence of energy relaxation time in AlGaAs/GaAs heterojunctions: direct measurements Type (up) Journal Article
Year 2011 Publication Semicond. Sci. Technol. Abbreviated Journal Semicond. Sci. Technol.
Volume 26 Issue 2 Pages 025013
Keywords AlGaAs/GaAs heterojunctions
Abstract We present measurements of the energy relaxation time, τε, of electrons in a single heterojunction in a quasi-equilibrium state using microwave time-resolved spectroscopy at 4.2 K. We find the relaxation time has a power-law dependence on the carrier density of the two-dimensional electron gas, τε∝nγs with γ = 0.40 ± 0.02 for values of the carrier density, ns, from 1.6 × 1011 to 6.6 × 1011cm−2. The results are in good agreement with predictions taking into account the scattering of the carriers by both piezoelectric and deformation potential acoustic phonons. We compare these results with indirect measurements of the energy relaxation time from energy loss measurements involving Joule heating of the electron gas.
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ISSN 0268-1242 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1215
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