|   | 
Details
   web
Records
Author Pentin, I. V.; Smirnov, A. V.; Ryabchun, S. A.; Gol’tsman, G. N.; Vaks, V. L.; Pripolzin, S. I.; Paveliev, D. G.
Title Heterodyne source of THz range based on semiconductor superlattice multiplier Type (up) Conference Article
Year 2011 Publication IRMMW-THz Abbreviated Journal IRMMW-THz
Volume Issue Pages 1-2
Keywords NbN HEB mixer, superlattice
Abstract We present the results of our studies of the possibility of developing a heterodyne receiver incorporating a hot-electron bolometer mixer as the detector and a semiconductor superlattice multiplier driven by a reference synthesizer as the local oscillator. We observe that such a local oscillator offers enough power in the terahertz range to pump the HEB into the operating state.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number 6105209 Serial 1384
Permanent link to this record
 

 
Author Ryabchun, S.; Smirnov, A.; Pentin, I.; Vakhtomin, Yu.; Smirnov, K.; Kaurova, N.; Voronov, B.; Goltsman, G.
Title Superconducting single photon detector integrated with optical cavity Type (up) Conference Article
Year 2011 Publication Proc. MLPLIT Abbreviated Journal Proc. MLPLIT
Volume Issue Pages 143-145
Keywords NbN SSPD, cavity
Abstract
Address Suzdal / Vladimir (Russia)
Corporate Author Thesis
Publisher Modern laser physics and laser-information technologies for science and manufacture Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference 1st international russian-chinese conference / youthschool-workshop
Notes September 23-28, 2011 Approved no
Call Number Serial 1385
Permanent link to this record
 

 
Author Maslennikova, A.; Larionov, P.; Ryabchun, S.; Smirnov, A.; Pentin, I.; Vakhtomin, Yu.; Smirnov, K.; Kaurova, N.; Voronov, B.; Goltsman, G.
Title Noise equivalent power and dynamic range of NBN hot-electron bolometers Type (up) Conference Article
Year 2011 Publication Proc. MLPLIT Abbreviated Journal Proc. MLPLIT
Volume Issue Pages 146-148
Keywords NbN HEB
Abstract
Address Suzdal / Vladimir (Russia)
Corporate Author Thesis
Publisher Modern laser physics and laser-information technologies for science and manufacture Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference 1st international russian-chinese conference / youthschool-workshop
Notes September 23-28, 2011 Approved no
Call Number Serial 1386
Permanent link to this record
 

 
Author Korneev, A.; Korneeva, Y.; Florya, I.; Voronov, B.; Goltsman, G.
Title Spectral sensitivity of narrow strip NbN superconducting single-photon detector Type (up) Conference Article
Year 2011 Publication Proc. SPIE Abbreviated Journal Proc. SPIE
Volume 8072 Issue Pages 80720G (1 to 9)
Keywords NbN SSPD, SNSPD
Abstract Superconducting single-photon detector (SSPD) is patterned from 4-nm-thick NbN film deposited on sapphire substrate as a 100-nm-wide strip. Due to its high detection efficiency, low dark counts, and picosecond timing jitter SSPD has become a competitor to the InGaAs avalanche photodiodes at 1550 nm and longer wavelengths. Although the SSPD is operated at liquid helium temperature its efficient single-mode fibre coupling enabled its usage in many applications ranging from single-photon sources research to quantum cryptography. In our strive to increase the detection efficiency at 1550 nm and longer wavelengths we developed and fabricated SSPD with the strip almost twice narrower compared to the standard 100 nm. To increase the voltage response of the device we utilized cascade switching mechanism: we connected 50-nm-wide and 10-μm-long strips in parallel covering the area of 10 μmx10 μm. Absorption of a photon breaks the superconductivity in a strip leading to the bias current redistribution between other strips followed their cascade switching. As the total current of all the strips about is 1 mA by the order of magnitude the response voltage of such an SSPD is several times higher compared to the traditional meander-shaped SSPDs. In middle infrared (about 3 μm wavelength) these devices have the detection efficiency several times higher compared to the traditional SSPDs.
Address
Corporate Author Thesis
Publisher SPIE Place of Publication Editor Fiurásek, J.; Prochazka, I.
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference Photon Counting Applications, Quantum Optics, and Quantum Information Transfer and Processing III
Notes Approved no
Call Number Serial 1387
Permanent link to this record
 

 
Author Kumar, Sushil; Chan, Chun Wang I.; Hu, Qing; Reno, John L.
Title A 1.8-THz quantum cascade laser operating significantly above the temperature of hw/k Type (up) Journal Article
Year 2011 Publication Nature Physics Abbreviated Journal
Volume 7 Issue Pages 166-171
Keywords QCL, 2 mW at 155 K and 1.8 THz
Abstract Several competing technologies continue to advance the field of terahertz science; of particular importance has been the development of a terahertz semiconductor quantum cascade laser (QCL), which is arguably the only solid-state terahertz source with average optical power levels of much greater than a milliwatt. Terahertz QCLs are required to be cryogenically cooled and improvement of their temperature performance is the single most important research goal in the field. Thus far, their maximum operating temperature has been empirically limited to ~planckω/kB, a largely inexplicable trend that has bred speculation that a room-temperature terahertz QCL may not be possible in materials used at present. Here, we argue that this behaviour is an indirect consequence of the resonant-tunnelling injection mechanism employed in all previously reported terahertz QCLs. We demonstrate a new scattering-assisted injection scheme to surpass this limit for a 1.8-THz QCL that operates up to ~1.9planckω/kB (163 K). Peak optical power in excess of 2 mW was detected from the laser at 155 K. This development should make QCL technology attractive for applications below 2 THz, and initiate new design strategies for realizing a room-temperature terahertz semiconductor laser.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 631
Permanent link to this record