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Author Gayduchenko, I.; Fedorov, G.; Titova, N.; Moskotin, M.; Obraztsova, E.; Rybin, M.; Goltsman, G.
Title Towards to the development of THz detectors based on carbon nanostructures Type (up) Conference Article
Year 2018 Publication J. Phys.: Conf. Ser. Abbreviated Journal J. Phys.: Conf. Ser.
Volume 1092 Issue Pages 012039 (1 to 4)
Keywords CVD graphene, carbon nanotubes, CNT, field effect transistors, FET, THz detectors
Abstract Demand for efficient terahertz radiation detectors resulted in intensive study of the carbon nanostructures as possible solution for that problem. In this work we investigate the response to sub-terahertz radiation of detectors with sensor elements based on CVD graphene as well as its derivatives – carbon nanotubes (CNTs). The devices are made in configuration of field effect transistors (FET) with asymmetric source and drain (vanadium and gold) contacts and operate as lateral Schottky diodes. We show that at 300K semiconducting CNTs show better performance up to 300GHz with responsivity up to 100V/W, while quasi-metallic CNTs are shown to operate up to 2.5THz. At 300 K graphene detector exhibit the room-temperature responsivity from R = 15 V/W at f = 129 GHz to R = 3 V/W at f = 450 GHz. We find that at low temperatures (77K) the graphene lateral Schottky diodes responsivity rises with the increasing frequency of the incident sub-THz radiation. We interpret this result as a manifestation of a plasmonic effect in the devices with the relatively long plasmonic wavelengths. The obtained data allows for determination of the most promising directions of development of the technology of nanocarbon structures for the detection of THz radiation.
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Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1742-6588 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1302
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Author Fedorov, G.; Gayduchenko, I.; Titova, N.; Moskotin, M.; Obraztsova, E.; Rybin, M.; Goltsman, G.
Title Graphene-based lateral Schottky diodes for detecting terahertz radiation Type (up) Conference Article
Year 2018 Publication Proc. Optical Sensing and Detection V Abbreviated Journal Proc. Optical Sensing and Detection V
Volume 10680 Issue Pages 30-39
Keywords graphene, terahertz radiation, detectors, Schottky diodes, carbon nanotubes, plasma waves
Abstract Demand for efficient terahertz radiation detectors resulted in intensive study of the carbon nanostructures as possible solution for that problem. In this work we investigate the response to sub-terahertz radiation of graphene field effect transistors of two configurations. The devices of the first type are based on single layer CVD graphene with asymmetric source and drain (vanadium and gold) contacts and operate as lateral Schottky diodes (LSD). The devices of the second type are made in so-called Dyakonov-Shur configuration in which the radiation is coupled through a spiral antenna to source and top electrodes. We show that at 300 K the LSD detector exhibit the room-temperature responsivity from R = 15 V/W at f= 129 GHz to R = 3 V/W at f = 450 GHz. The DS detector responsivity is markedly lower (2 V/W) and practically frequency independent in the investigated range. We find that at low temperatures (77K) the graphene lateral Schottky diodes responsivity rises with the increasing frequency of the incident sub-THz radiation. We interpret this result as a manifestation of a plasmonic effect in the devices with the relatively long plasmonic wavelengths. The obtained data allows for determination of the most promising directions of development of the technology of nanocarbon structures for the detection of THz radiation.
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Corporate Author Thesis
Publisher Spie Place of Publication Editor Berghmans, F.; Mignani, A.G.
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number 10.1117/12.2307020 Serial 1306
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Author Baeva, E.; Sidorova, M.; Korneev, A.; Goltsman, G.
Title Precise measurement of the thermal conductivity of superconductor Type (up) Conference Article
Year 2018 Publication Proc. AIP Conf. Abbreviated Journal Proc. AIP Conf.
Volume 1936 Issue 1 Pages 020003 (1 to 4)
Keywords NbN SSPD, SNSPD
Abstract Measuring the thermal properties such as the heat capacity provide information about intrinsic mechanisms operated inside. In general, the ratio between electron and phonon specific heat Ce/Cp shows how the absorbed energy shared between electron and phonon subsystems. In this work we make estimations for amplitude-modulated absorption of THz radiation technique for investigation of the ratio Ce/Cp in superconducting Niobium Nitride (NbN) at T = Tc. Our results indicates that experimentally the frequency of modulation has to be extra large to extract the quantity. We perform a new technique allowed to work at low frequency with accurately measurement of absorbed power.
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ISSN ISBN Medium
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Notes Approved no
Call Number doi:10.1063/1.5025441 Serial 1311
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Author Gayduchenko, I. A.; Moskotin, M. V.; Matyushkin, Y. E.; Rybin, M. G.; Obraztsova, E. D.; Ryzhii, V. I.; Goltsman, G. N.; Fedorov, G. E.
Title The detection of sub-terahertz radiation using graphene-layer and graphene-nanoribbon FETs with asymmetric contacts Type (up) Conference Article
Year 2018 Publication Materials Today: Proc. Abbreviated Journal Materials Today: Proc.
Volume 5 Issue 13 Pages 27301-27306
Keywords graphene nanoribbons, graphene-nanoribbon, GNR FET, field effect transistor
Abstract We report on the detection of sub-terahertz radiation using single layer graphene and graphene-nanoribbon FETs with asymmetric contacts (one is the Schottky contact and one – the Ohmic contact). We found that cutting graphene into ribbons a hundred nanometers wide leads to a decrease of the response to sub-THz radiation. We show that suppression of the response in the graphene nanoribbons devices can be explained by unusual properties of the Schottky barrier on graphene-vanadium interface.
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Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2214-7853 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1316
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Author Belosevich, V. V.; Gayduchenko, I. A.; Titova, N. A.; Zhukova, E. S.; Goltsman, G. N.; Fedorov, G. E.; Silaev, A. A.
Title Response of carbon nanotube film transistor to the THz radiation Type (up) Conference Article
Year 2018 Publication EPJ Web Conf. Abbreviated Journal EPJ Web Conf.
Volume 195 Issue Pages 05012 (1 to 2)
Keywords field-effect transistor, FET, carbon nanotube, CNT
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Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2100-014X ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1317
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Author Tretyakov, I.; Kaurova, N.; Raybchun, S.; Goltsman, G. N.; Silaev, A. A.
Title Technology for NbN HEB based multipixel matrix of THz range Type (up) Conference Article
Year 2018 Publication EPJ Web Conf. Abbreviated Journal EPJ Web Conf.
Volume 195 Issue Pages 05011
Keywords NbN HEB
Abstract The influence of homogeneity disorder degree of the thin superconducting NbN film across of Si wafer on characteristics of the Hot Electron Bolometers (HEB) has been investigated. Our experiments have been carried out near the superconducting transition and far below it. The high homogeneity disorder degree of the NbN film has been achieved by preparing the Si substrate surface. The fabricated HEBs all have almost identical R (T) characteristics with a dispersion of Tc and the normal resistance R300 of not more than 0.15K and 2 Ω, respectively. The quality of the devises allows us to demonstrate clearly the influence of non-equilibrium processes in the S’SS’ system on the device performance. Our fabrication technology also allows creating multiplex heterodyne and direct detector matrices based the HEB devices.
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Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2100-014X ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1318
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Author Korneeva, Y.; Vodolazov, D.; Florya, I.; Manova, N.; Smirnov, E.; Korneev, A.; Mikhailov, M.; Goltsman, G.; Klapwijk, T. M.; Naumov, A. V.; Gladush, M. G.; Karimullin, K. R.
Title Single photon detection in micron scale NbN and α-MoSi superconducting strips Type (up) Conference Article
Year 2018 Publication EPJ Web Conf. Abbreviated Journal EPJ Web Conf.
Volume 190 Issue Pages 04010 (1 to 2)
Keywords SSPD
Abstract We experimentally demonstrate the single photon detection in straight micrometer-wide NbN and α-MoSi bridges. Width of the bridges is 2 µm, while the wavelength of the photon changes from 408 to 1550 nm and critical current exceeds 50% of the depairing current. Obtained results offer the alternative route for design of detectors without resonator and meander structure and indirectly confirm vortex assisted mechanism of single photon detection.
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2100-014X ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1319
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Author Goltsman, G.; Naumov, A. V.; Gladush, M. G.; Karimullin, K. R.
Title Quantum photonic integrated circuits with waveguide integrated superconducting nanowire single-photon detectors Type (up) Conference Article
Year 2018 Publication EPJ Web Conf. Abbreviated Journal EPJ Web Conf.
Volume 190 Issue Pages 02004 (1 to 2)
Keywords waveguide SSPD, SNSPD
Abstract We show the design, a history of development as well as the most successful and promising approaches for QPICs realization based on hybrid nanophotonic-superconducting devices, where one of the key elements of such a circuit is a waveguide integrated superconducting single-photon detector (WSSPD). The potential of integration with fluorescent molecules is discussed also.
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2100-014X ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1320
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Author Goltsman, G.
Title Superconducting thin film as infrared heterodyne and direct detectors Type (up) Conference Article
Year 2017 Publication 16th ISEC Abbreviated Journal 16th ISEC
Volume Issue Pages 1-3
Keywords optical waveguide SSPD, SNSPD
Abstract We present our recent achievements in the development of superconducting nanowire single-photon detectors (SNSPDs) integrated with optical waveguides on a chip. We demonstrate both single-photon counting with up to 90% on-chip-quantum-efficiency (OCDE), and the heterodyne mixing with a close to the quantum limit sensitivity at the telecommunication wavelength using single device.
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Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
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ISSN ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number 8314188 Serial 1323
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Author Elezov, M. S.; Ozhegov, R. V.; Goltsman, G. N.; Makarov, V.; Vinogradov, E. A.; Naumov, A. V.; Gladush, M. G.; Karimullin, K. R.
Title Development of the experimental setup for investigation of latching of superconducting single-photon detector caused by blinding attack on the quantum key distribution system Type (up) Conference Article
Year 2017 Publication EPJ Web Conf. Abbreviated Journal EPJ Web Conf.
Volume 132 Issue Pages 01004 (1 to 2)
Keywords QKD, SSPD, SNSPD
Abstract Recently bright-light control of the SSPD has been demonstrated. This attack employed a “backdoor” in the detector biasing scheme. Under bright-light illumination, SSPD becomes resistive and remains “latched” in the resistive state even when the light is switched off. While the SSPD is latched, Eve can simulate SSPD single-photon response by sending strong light pulses, thus deceiving Bob. We developed the experimental setup for investigation of a dependence on latching threshold of SSPD on optical pulse length and peak power. By knowing latching threshold it is possible to understand essential requirements for development countermeasures against blinding attack on quantum key distribution system with SSPDs.
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2100-014X ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1327
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