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Zolotov, P. I.; Vakhtomin, Yu. B.; Divochiy, A. V.; Seleznev, V. A.; Smirnov, K. V. |
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Title |
Technology development of resonator-based structures for efficiency increasing of NBN detectors of IR single photons |
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2016 |
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Proc. 5th Int. Conf. Photonics and Information Optics |
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Proc. 5th Int. Conf. Photonics and Information Optics |
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115-116 |
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NbN SSPD |
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This paper presents a technology of fabrication of NbN superconductive single- photon detectors, using resonator structures. The main results are related to optimization of the process of NbN sputtering over substrate with metallic mirrors and SiO 2 /Si 3 N 4 layers /4 thick. Investigation of the quantum efficiency of fabricated devices at 1.6 K on 1.55 μm showed triple-magnified value compared to standard Si/NbN structures. |
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978-5-7262-2215-8 |
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http://fioconf.mephi.ru/files/2015/12/FIO2016-Sbornik.pdf Разработка технологии создания резонаторных структур для увеличения квантовой эффективности NBN детекторов ИК-фотонов |
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1811 |
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Smirnov, A. V.; Karmantsov, M. S.; Smirnov, K. V.; Vakhtomin, Y. B.; Masterov, D. V.; Tarkhov, M. A.; Pavlov, S. A.; Parafin, A. E. |
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Terahertz response of thin-film YBCO bolometers |
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Journal Article |
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2012 |
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Tech. Phys. |
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Tech. Phys. |
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57 |
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12 |
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1716-1719 |
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YBCO HEB |
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The bolometric response of high-temperature thin-film YBCO superconducting detectors to an electromagnetic radiation with a frequency of 2.5 THz is measured for the first time. The minimum value of the noise-equivalent power of the detectors is 3.5 × 10−9 W/Hz−−−√. The feasibility of further increasing the sensitivity of the detectors is discussed. |
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1063-7842 |
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1817 |
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Казаков, А. Ю.; Селиверстов, С. В.; Дивочий, А. В.; Смирнов, К. В.; Финкель, М. И.; Вахтомин, Ю. Б. |
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Возможность применения сверхпроводниковых материалов в качестве отражающего покрытия зеркала телескопа, предназначенного для наблюдений анизотропии реликтового излучения |
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2012 |
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Преподаватель ХХI век |
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3 |
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221-224 |
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submillimeter radio telescope |
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В статье исследуется возможность использования сверхпроводящего материала в качестве отражающего слоя зеркала субмиллиметрового телескопа, охлажденного до криогенных температур и предназначенного для наблюдений реликтового излучения. Для нескольких сверхпроводниковых материалов вычислен диапазон частот, в котором флуктуации теплового излучения покрытия меньше флуктуаций источника. Показана перспективность применения покрытия из Nb3Ge. |
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1820 |
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Смирнов, А. В.; Карманцов, М. С.; Смирнов, К. В.; Вахтомин, Ю. Б.; Мастеров, Д. В.; Тархов, М. А.; Павлов, С. А.; Парафин, А. Е. |
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Title |
Терагерцовый отклик болометров на основе тонких пленок YBCO |
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Journal Article |
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2012 |
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ЖТФ |
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ЖТФ |
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82 |
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12 |
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108-111 |
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YBCO HEB NEP |
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Представлены первые результаты измерения болометрического отклика высокотемпературных сверхпроводниковых детекторов на основе тонких пленок YBCO на электромагнитное излучение с частотой 2.5 THz. Минимальное значение оптической мощности, эквивалентной шуму созданных детекторов, составило 3.5· 10-9 W/sqrt(Hz)sqrt. Обсуждена возможность дальнейшего увеличения чувствительности исследуемых детекторов. |
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1825 |
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Korneeva, Yu. P.; Trifonov, A. V.; Vakhtomin, Yu. B.; Smirnov, K. V. |
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Title |
Design of resonator for superconducting single-photon detector |
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Journal Article |
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2011 |
Publication |
Rus. J. Radio Electron. |
Abbreviated Journal |
Rus. J. Radio Electron. |
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12 |
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SSPD optical resonator, SNSPD |
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A resonator for superconducting single-photon detector is designed. Near 60% coupling with a radiation propagating from a dielectric substrate of optical fiber is demonstrated to be achieved for typical values of the detector’s film sheet resistance. |
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6 pages |
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1827 |
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Sidorova, M.; Semenov, A.; Hübers, H.-W.; Kuzmin, A.; Doerner, S.; Ilin, K.; Siegel, M.; Charaev, I.; Vodolazov, D. |
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Timing jitter in photon detection by straight superconducting nanowires: Effect of magnetic field and photon flux |
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2018 |
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Phys. Rev. B |
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Phys. Rev. B |
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98 |
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13 |
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134504 (1 to 14) |
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SNSPD, NbN namowires |
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We studied the effects of the external magnetic field and photon flux on timing jitter in photon detection by straight superconducting NbN nanowires. At two wavelengths 800 and 1560 nm, statistical distribution in the appearance times of photon counts exhibits Gaussian shape at small times and an exponential tail at large times. The characteristic exponential time is larger for photons with smaller energy and increases with external magnetic field while variations in the Gaussian part of the distribution are less pronounced. Increasing photon flux drives the nanowire from the discrete quantum detection regime to the uniform bolometric regime that averages out fluctuations of the total number of nonequilibrium electrons created by the photon and drastically reduces jitter. The difference between standard deviations of Gaussian parts of distributions for these two regimes provides the measure for the strength of electron-number fluctuations; it increases with the photon energy. We show that the two-dimensional hot-spot detection model explains qualitatively the effect of magnetic field. |
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2469-9950 |
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1842 |
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Emelianov, A. V.; Nekrasov, N. P.; Moskotin, M. V.; Fedorov, G. E.; Otero, N.; Romero, P. M.; Nevolin, V. K.; Afinogenov, B. I.; Nasibulin, A. G.; Bobrinetskiy, I. I. |
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Individual SWCNT transistor with photosensitive planar junction induced by two‐photon oxidation |
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2021 |
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Adv. Electron. Mater. |
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Adv. Electron. Mater. |
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7 |
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3 |
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2000872 |
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SWCNT transistors |
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The fabrication of planar junctions in carbon nanomaterials is a promising way to increase the optical sensitivity of optoelectronic nanometer-scale devices in photonic connections, sensors, and photovoltaics. Utilizing a unique lithography approach based on direct femtosecond laser processing, a fast and easy technique for modification of single-walled carbon nanotube (SWCNT) optoelectronic properties through localized two-photon oxidation is developed. It results in a novel approach of quasimetallic to semiconducting nanotube conversion so that metal/semiconductor planar junction is formed via local laser patterning. The fabricated planar junction in the field-effect transistors based on individual SWCNT drastically increases the photoresponse of such devices. The broadband photoresponsivity of the two-photon oxidized structures reaches the value of 2 × 107 A W−1 per single SWCNT at 1 V bias voltage. The SWCNT-based transistors with induced metal/semiconductor planar junction can be applied to detect extremely small light intensities with high spatial resolution in photovoltaics, integrated circuits, and telecommunication applications. |
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2199-160X |
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1843 |
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Гершензон, Е. М. |
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Воздействие электромагнитного излучения на сверхпроводящую плёнку ниобия в резистивном состоянии |
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1982 |
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Тезисы докладов 22 Всесоюзной конференции по физике низких температур |
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79-80 |
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Karasik, B. S.; Elantiev, A. I. |
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Analysis of the noise performance of a hot-electron superconducting bolometer mixer |
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1995 |
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Proc. 6th Int. Symp. Space Terahertz Technol. |
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Proc. 6th Int. Symp. Space Terahertz Technol. |
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229-246 |
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HEB mixers |
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A theoretical analysis for the noise temperature of hot–electron superconducting mixer has been presented. Thecontributions of both Johnson noise and electron temperature fluctuations have been evaluated. A set of criteriaensuring low noise performance of the mixer has been stated and a simple analytic expression for the noisetemperature of the mixer device has been suggested. It has been shown that an improvement of the mixer sensitivitydoes not necessarily follow by a decrease of the bandwidth. An SSB noise temperature limit due to the intrinsic noisemechanisms has been estimated to be as low as 40–90 K for a mixer device made from Nb or NbN thin film.Furthermore, the conversion gain bandwidth can be as wide as is allowed by the intrinsic electron temperaturerelaxation time if an appropriate choice of the mixer resistance has been made. The intrinsic mixer noise bandwidthis of 3 GHz for Nb device and of 5 GHz for NbN device. An additional improvement of the theory has been madewhen a distinction between the impedance measured at high intermediate frequency (larger than the mixerbandwidth) and the mixer ohmic resistance has been taken into account.Recently obtained experimental data on Nb and NbNbolometer mixer devices are viewed in connection with thetheoretical predictions.The noise temperature limit has also been specified for the mixer device where an outdiffusion coolingmechanism rather than the electron–phonon energy relaxation determines the mixer bandwidth. A consideration ofthe noise performance of a bolometer mixer made from YBaCuO film utilizing a hot–electron effect has been done. |
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Cao, Aiqin; Jiang, L.; Chen, S.H.; Antipov, S.V.; Shi, S.C. |
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IF gain bandwidth of a quasi-optical NbN superconducting HEB mixer |
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2007 |
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Proc. International conference on microwave and millimeter wave technology |
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Proc. ICMMT |
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HEB, mixer, gain bandwidth |
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In this paper, the intermediate frequency (IF) gain bandwidth of a quasi-optical NbN superconducting hot-electron bolometer (HEB) mixer is investigated at 500 GHz with an IF system incorporating with a frequency down-converting scheme which is able to sweep the IF signal in a frequency range of 0.3-4 GHz. The IF gain bandwidth of the device is measured to be 1.5 GHz when it is biased at a voltage of the minimum noise temperature, and becomes larger when the bias voltage increases. |
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RPLAB @ lobanovyury @ |
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