| Records |
| Author |
Richards, P. L.; Shen, T. M.; Harris, R. E.; Lloyd, F. L. |
| Title |
Quasiparticle heterodyne mixing in SIS tunnel junctions |
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Journal Article |
| Year |
1979 |
Publication |
Appl. Phys. Lett. |
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| Volume |
34 |
Issue |
5 |
Pages |
345-347 |
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MSPU @ s @ SIS_mixing_qua_part_Richards_1979 |
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222 |
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Shcherbatenko, M.; Tretyakov, I.; Lobanov, Yu.; Maslennikov, S. N.; Kaurova, N.; Finkel, M.; Voronov, B.; Goltsman, G.; Klapwijk, T. M. |
| Title |
Nonequilibrium interpretation of DC properties of NbN superconducting hot electron bolometers |
Type |
Journal Article |
| Year |
2016 |
Publication |
Appl. Phys. Lett. |
Abbreviated Journal |
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| Volume |
109 |
Issue |
13 |
Pages |
132602 |
| Keywords |
HEB mixer, contacts |
| Abstract |
We present a physically consistent interpretation of the dc electrical properties of niobiumnitride (NbN)-based superconducting hot-electron bolometer mixers, using concepts of nonequilibrium superconductivity. Through this, we clarify what physical information can be extracted from the resistive transition and the dc current-voltage characteristics, measured at suitably chosen temperatures, and relevant for device characterization and optimization. We point out that the intrinsic spatial variation of the electronic properties of disordered superconductors, such as NbN, leads to a variation from device to device. |
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no |
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1107 |
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Bennett, Douglas A.; Schmidt, Daniel R.; Swetz, Daniel S.; Ullom, Joel N. |
| Title |
Phase-slip lines as a resistance mechanism in transition-edge sensors |
Type |
Journal Article |
| Year |
2014 |
Publication |
Appl. Phys. Lett. |
Abbreviated Journal |
Appl. Phys. Lett. |
| Volume |
104 |
Issue |
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Pages |
042602 |
| Keywords |
microbolometers, TES, phase-slip lines, PSL |
| Abstract |
The fundamental mechanism of resistance in voltage-biased superconducting films is poorly understood despite its importance as the basis of transition-edge sensors (TESs). TESs are utilized in state-of-the-art microbolometers and microcalorimeters covering a wide range of energies and applications. We present a model for the resistance of a TES based on phase-slip lines (PSLs) and compare the model to data. One of the model's predictions, discrete changes in the number of PSLs, is a possible explanation for the observed switching between discrete current states in localized regions of bias. |
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Recommended by Klapwijk |
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no |
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Serial |
929 |
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Kardakova, A.; Finkel, M.; Morozov, D.; Kovalyuk, V.; An, P.; Dunscombe, C.; Tarkhov, M.; Mauskopf, P.; Klapwijk, T.M.; Goltsman, G. |
| Title |
The electron-phonon relaxation time in thin superconducting titanium nitride films |
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Journal Article |
| Year |
2013 |
Publication |
Appl. Phys. Lett. |
Abbreviated Journal |
Appl. Phys. Lett. |
| Volume |
103 |
Issue |
25 |
Pages |
252602 (1 to 4) |
| Keywords |
disordered TiN films, electron-phonon relaxation time |
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We report on the direct measurement of the electron-phonon relaxation time, τeph, in disordered TiN films. Measured values of τeph are from 5.5 ns to 88 ns in the 4.2 to 1.7 K temperature range and consistent with a T−3 temperature dependence. The electronic density of states at the Fermi level N0 is estimated from measured material parameters. The presented results confirm that thin TiN films are promising candidate-materials for ultrasensitive superconducting detectors.
The work was supported by the Ministry of Education and Science of the Russian Federation, Contract No. 14.B25.31.0007 and by the RFBR Grant No. 13-02-91159. |
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no |
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RPLAB @ kovalyuk @ |
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941 |
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Swetz, D. S.; Bennett, D. A.; Irwin, K. D.; Schmidt, D. R.; Ullom, J. N. |
| Title |
Current distribution and transition width in superconducting transition-edge sensors |
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Journal Article |
| Year |
2012 |
Publication |
Appl. Phys. Lett. |
Abbreviated Journal |
Appl. Phys. Lett. |
| Volume |
101 |
Issue |
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Pages |
242603 |
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Present models of the superconducting-to-normal transition in transition-edge sensors (TESs) do not describe the current distribution within a biased TES. This distribution is complicated by normal-metal features that are integral to TES design. We present a model with one free parameter that describes the evolution of the current distribution with bias. To probe the current distribution experimentally, we fabricated TES devices with different current return geometries. Devices where the current return geometry mirrors current flow within the device have sharper transitions, thus allowing for a direct test of the current-flow model.Measurements from these devices show that current meanders through a TES low in the resistivetransition but flows across the normal-metal features by 40% of the normal-state resistance. Comparison of transition sharpness between device designs reveals that self-induced magnetic fields play an important role in determining the width of the superconducting transition. |
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TES, current distribution |
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Recommended by Klapwijk |
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no |
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930 |
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