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Author Елманов, И. А.; Елманова, А. В.; Голиков, А. Д.; Комракова, С. А.; Каурова, Н. С.; Ковалюк, В. В.; Гольцман, Г. Н. url  openurl
  Title Способ определения параметров резистов для электронной литографии фотонных интегральных схем на платформе нитрида кремния Type Conference Article
  Year 2019 Publication Proc. IWQO Abbreviated Journal Proc. IWQO  
  Volume Issue Pages 306-308  
  Keywords Si3N4, e-beam lithography, EBL  
  Abstract В работе были измерены толщины резистов ZEP 520A и ma-N 2400 для электронно-лучевой литографии, неразрушающим способом, а также подобран рецепт, обеспечивающий высокое отношение скорости травления нитрида кремния по сравнению с резистом. Работа имеет практическое значение для электронной литографии интегрально-оптических устройств и устройств нанофотоники на основе нитрида кремния.  
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  Notes Duplicated as 1189 Approved no  
  Call Number Serial 1284  
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Author Елманова, А.; Елманов, И.; Комракова, С.; Голиков, А.; Джавадзадэ, Д.; Воробьёв, В.; Большедворский, С.; Сошенко, В.; Акимов, А.; Ковалюк, В.; Гольцман, Г. url  openurl
  Title Способ интеграции наноалмазов с нанофотонными устройствами из нитрида кремния Type Conference Article
  Year 2019 Publication Proc. IWQO Abbreviated Journal Proc. IWQO  
  Volume Issue Pages 309-311  
  Keywords nanodiamonds, NV-centers  
  Abstract В работе были разработаны оптические структуры из нитрида кремния для дальнейшего размещения на них наноалмазов с NV-центрами, опробованы различные методики нанесения раствора наноалмазов и выбрана оптимальная. Работа имеет практическое значение в области нанофотоники и создании квантово-оптических устройств с однофотонными источниками.  
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  Notes Duplicated as 1190 Approved no  
  Call Number Serial 1285  
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Author Goltsman, G. url  openurl
  Title Quantum-photonic integrated circuits Type Conference Article
  Year 2019 Publication Proc. IWQO Abbreviated Journal Proc. IWQO  
  Volume Issue Pages 22-23  
  Keywords WSSPD, waveguide SSPD, SNSPD, quantum optics, integrated optics, superconducting nanowire single-photon detector  
  Abstract We show the design, a history of development as well as the most successful and promising approaches for QPICs realization based on hybrid nanophotonic-superconducting devices, where one of the key elements of such a circuit is a waveguide integrated superconducting single-photon detector (WSSPD). The potential of integration with fluorescent molecules is discussed also.  
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  Call Number Serial 1287  
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Author Aksaev, E. E.; Gershenzon, E. M.; Gol'tsman, G. N.; Semenov, A. D.; Sergeev, A. V. url  openurl
  Title Interaction of electrons with thermal phonons in YBa2Cu3O7-δ films at low temperatures Type Journal Article
  Year 1989 Publication JETP Lett. Abbreviated Journal JETP Lett.  
  Volume 50 Issue 5 Pages 283-286  
  Keywords YBCO HTS films  
  Abstract The time of electron-phonon interaction tau(eph) in YBaCuO films at low temperatures is studied. This is measured as the time of resistance relaxation in the resistive state of the superconducter, and is also determined from the increase in resistance under the action of radiation. Consistent results of these methods show that resistance relaxation in the resistive state is caused by cooling of the electron subsystem with respect to the phonon subsystem. The time tau(eph) is found to be inversely proportional to the temperature and comes to 80 ps when T = 1.6 K and 5 ps when T = 30 K. 6 refs.  
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  Call Number Serial 1690  
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Author Verevkin, A. I.; Ptitsina, N. G.; Chulkova, G. M.; Gol'tsman, G. N.; Gershenzon, E. M.; Yngvesson, K. S. url  openurl
  Title Electron energy relaxation in a 2D channel in AlGaAs-GaAs heterostructures under quasiequilibrium conditions at low temperatures Type Journal Article
  Year 1995 Publication JETP Lett. Abbreviated Journal JETP Lett.  
  Volume 61 Issue 7 Pages 591-595  
  Keywords 2DEG, AlGaAs/GaAs heterostructures  
  Abstract The energy relaxation time of 2D electrons, Te, has been measured under quasiequilibrium conditions in AlGaAs—GaAs heterojunctions over the temperature range T= 1.5—20 K. At T> 4 K, Te depends only weakly on the temperature, while at T< 4 K 7;'(T) there is a dependence fr; lNT. A linear dependence 7: 1 (T) in the Bloch—-Grfineisen temperature region (T< 5 K) is unambiguous evidence that a piezoacoustic mechanism of an electron—phonon interaction is predominant in the inelastic scattering of electrons. The values of T6 in this temperature range agree very accurately with theoretical results reported by Karpus [Sov. Phys. Semicond. 22 (1988)]. At higher temperatures, where scat—tering by deformation acoustic phonons becomes substantial, there is a significant discrepancy between the experimental and theoretical re-sults.  
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  Notes Approved no  
  Call Number Serial 1624  
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