Home | [21–30] << 31 32 33 34 35 36 37 38 39 40 >> [41–43] |
![]() |
Records | |||||
---|---|---|---|---|---|
Author | Il'in, K. S.; Karasik, B. S.; Ptitsina, N. G.; Sergeev, A. V.; Gol'tsman, G. N.; Gershenzon, E. M.; Pechen, E. V.; Krasnosvobodtsev, S. I. | ||||
Title | Electron-phonon-impurity interference in thin NbC films: electron inelastic scattering time and corrections to resistivity | Type | Conference Article | ||
Year | 1996 | Publication | Czech. J. Phys. | Abbreviated Journal | Czech. J. Phys. |
Volume | 46 | Issue | S2 | Pages | 857-858 |
Keywords | NbC films | ||||
Abstract | Complex study of transport properties of impure NbC films with the electron mean free pathl=0.6–13 nm show the crucial role of the electron-phonon-impurity interference (EPII). In the temperature range 20–70 K we found the interference correction to resistivity proportional to T2 and to the residual resistivity of the film. Using the comprehensive theory of EPII, we determine the electron coupling with transverse phonons and calculate the electron inelastic scattering time. Direct measurements of the inelastic electron scattering time using a response to a high-frequency amplitude modulated cw radiation agree well with the theory. | ||||
Address | |||||
Corporate Author | Thesis | ||||
Publisher | Place of Publication | Editor | |||
Language | Summary Language | Original Title | |||
Series Editor | Series Title | Abbreviated Series Title | |||
Series Volume | Series Issue | Edition | |||
ISSN | 0011-4626 | ISBN | Medium | ||
Area | Expedition | Conference | |||
Notes | Approved | no | |||
Call Number | Serial | 1617 | |||
Permanent link to this record | |||||
Author | Chulcova, G. M.; Ptitsina, N. G.; Gershenzon, E. M.; Gershenzon, M. E.; Sergeev, A. V. | ||||
Title | Effect of the interference between electron-phonon and electron-impurity (boundary) scattering on resistivity Nb, Al, Be films | Type | Conference Article | ||
Year | 1996 | Publication | Czech J. Phys. | Abbreviated Journal | Czech J. Phys. |
Volume | 46 | Issue | S5 | Pages | 2489-2490 |
Keywords | Al, Be, Nb films | ||||
Abstract | The temperature dependence of the resistivity of thin Nb, Al, Be films has been studied over a wide temperature range 4-300 K. We have found that the temperature-dependent correction to the residual resistivity is well described by the sum of the Bloch-Grüneisen term and the term originating from the interference between electron-phonon and electron-impurity scattering. Study of the transport interference phenomena allows to determine electron-phonon coupling in disordered metals. The interference term is proportional to T2 and also to the residual resistivity and dominates over the Bloch-Grüneisen term at low temperatures (T<40 K). | ||||
Address | |||||
Corporate Author | Thesis | ||||
Publisher | Place of Publication | Editor | |||
Language | Summary Language | Original Title | |||
Series Editor | Series Title | Abbreviated Series Title | |||
Series Volume | Series Issue | Edition | |||
ISSN | 0011-4626 | ISBN | Medium | ||
Area | Expedition | Conference | |||
Notes | Approved | no | |||
Call Number | Serial | 1767 | |||
Permanent link to this record | |||||
Author | Tretyakov, I.; Shurakov, A.; Perepelitsa, A.; Kaurova, N.; Svyatodukh, S.; Zilberley, T.; Ryabchun, S.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G. | ||||
Title | Silicon room temperature IR detectors coated with Ag2S quantum dots | Type | Conference Article | ||
Year | 2019 | Publication | Proc. IWQO | Abbreviated Journal | Proc. IWQO |
Volume | Issue | Pages | 369-371 | ||
Keywords | silicon detector, quantum dot, IR, surface states | ||||
Abstract | For decades silicon has been the chief technological semiconducting material of modern microelectronics. Application of silicon detectors in optoelectronic devices are limited to the visible and near infrared ranges, due to their transparency for radiation with a wavelength higher than 1.1 μm. The expansion Si absorption towards longer wave lengths is a considerable interest to optoelectronic applications. In this work we present an elegant and effective solution to this problem using Ag2S quantum dots, creating impurity states in Si to cause sub-band gap photon absorption. The sensitivity of room temperature zero-bias Si_Ag2S detectors, which we obtained is 1011 cmHzW . Given the variety of QDs parameters such as: material, dimensions, our results open a path towards the future study and development of Si detectors for technological applications. | ||||
Address | |||||
Corporate Author | Thesis | ||||
Publisher | Place of Publication | Editor | |||
Language | Summary Language | Original Title | |||
Series Editor | Series Title | Abbreviated Series Title | |||
Series Volume | Series Issue | Edition | |||
ISSN | ISBN | 978-5-89513-451-1 | Medium | ||
Area | Expedition | Conference | |||
Notes | Approved | no | |||
Call Number | Serial | 1154 | |||
Permanent link to this record | |||||
Author | Проходцов, А. И.; Голиков, А. Д.; Ан, П. П.; Ковалюк, В. В.; Гольцман, Г. Н. | ||||
Title | Влияние покрытия из оксида кремния на эффективность фокусирующего решеточного элемента связи из нитрида кремния | Type | Conference Article | ||
Year | 2019 | Publication | Proc. IWQO | Abbreviated Journal | Proc. IWQO |
Volume | Issue | Pages | 201-203 | ||
Keywords | integrated optics, silicon nitride, focusing grating coupler | ||||
Abstract | В работе экспериментально изучена зависимость эффективности фокусирующего решеточного элемента связи от периода и фактора заполнения до и после напыления верхнего слоя из оксида кремния. Полученные данные имеют практическое значение при создании перестраиваемых интегрально-оптических устройств на нитриде кремния. | ||||
Address | |||||
Corporate Author | Thesis | ||||
Publisher | Place of Publication | Editor | |||
Language | Russian | Summary Language | Original Title | ||
Series Editor | Series Title | Abbreviated Series Title | |||
Series Volume | Series Issue | Edition | |||
ISSN | ISBN | Medium | |||
Area | Expedition | Conference | |||
Notes | Duplicated as 1188 | Approved | no | ||
Call Number | Serial | 1282 | |||
Permanent link to this record | |||||
Author | Елезов, М. С.; Щербатенко, М. Л.; Сыч, Д. В.; Гольцман, Г. Н. | ||||
Title | Практические особенности работы оптоволоконного квантового приемника Кеннеди | Type | Conference Article | ||
Year | 2019 | Publication | Proc. IWQO | Abbreviated Journal | Proc. IWQO |
Volume | Issue | Pages | 303-305 | ||
Keywords | Kennedy quantum receiver, fiber, quantum optics, standard quantum limit, superconducting nanowire single-photon detector, coherent detection | ||||
Abstract | Мы рассматриваем практические особенности работы квантового приемника на основе схемы Кеннеди, собранного из стандартных оптоволоконных элементов и сверхпроводникового детектора одиночных фотонов. Приемник разработан для различения двух фазовомодулированных когерентных состояний света на длине волны 1,5 микрона в непрерывном режиме с частотой модуляции 200 КГц и уровнем ошибок различения примерно в два раза ниже стандартного квантового предела. | ||||
Address | |||||
Corporate Author | Thesis | ||||
Publisher | Place of Publication | Editor | |||
Language | Russian | Summary Language | Original Title | ||
Series Editor | Series Title | Abbreviated Series Title | |||
Series Volume | Series Issue | Edition | |||
ISSN | ISBN | Medium | |||
Area | Expedition | Conference | |||
Notes | Duplicated as 1288 | Approved | no | ||
Call Number | Serial | 1283 | |||
Permanent link to this record | |||||
Author | Елманов, И. А.; Елманова, А. В.; Голиков, А. Д.; Комракова, С. А.; Каурова, Н. С.; Ковалюк, В. В.; Гольцман, Г. Н. | ||||
Title | Способ определения параметров резистов для электронной литографии фотонных интегральных схем на платформе нитрида кремния | Type | Conference Article | ||
Year | 2019 | Publication | Proc. IWQO | Abbreviated Journal | Proc. IWQO |
Volume | Issue | Pages | 306-308 | ||
Keywords | Si3N4, e-beam lithography, EBL | ||||
Abstract | В работе были измерены толщины резистов ZEP 520A и ma-N 2400 для электронно-лучевой литографии, неразрушающим способом, а также подобран рецепт, обеспечивающий высокое отношение скорости травления нитрида кремния по сравнению с резистом. Работа имеет практическое значение для электронной литографии интегрально-оптических устройств и устройств нанофотоники на основе нитрида кремния. | ||||
Address | |||||
Corporate Author | Thesis | ||||
Publisher | Place of Publication | Editor | |||
Language | Summary Language | Original Title | |||
Series Editor | Series Title | Abbreviated Series Title | |||
Series Volume | Series Issue | Edition | |||
ISSN | ISBN | Medium | |||
Area | Expedition | Conference | |||
Notes | Duplicated as 1189 | Approved | no | ||
Call Number | Serial | 1284 | |||
Permanent link to this record | |||||
Author | Елманова, А.; Елманов, И.; Комракова, С.; Голиков, А.; Джавадзадэ, Д.; Воробьёв, В.; Большедворский, С.; Сошенко, В.; Акимов, А.; Ковалюк, В.; Гольцман, Г. | ||||
Title | Способ интеграции наноалмазов с нанофотонными устройствами из нитрида кремния | Type | Conference Article | ||
Year | 2019 | Publication | Proc. IWQO | Abbreviated Journal | Proc. IWQO |
Volume | Issue | Pages | 309-311 | ||
Keywords | nanodiamonds, NV-centers | ||||
Abstract | В работе были разработаны оптические структуры из нитрида кремния для дальнейшего размещения на них наноалмазов с NV-центрами, опробованы различные методики нанесения раствора наноалмазов и выбрана оптимальная. Работа имеет практическое значение в области нанофотоники и создании квантово-оптических устройств с однофотонными источниками. | ||||
Address | |||||
Corporate Author | Thesis | ||||
Publisher | Place of Publication | Editor | |||
Language | Summary Language | Original Title | |||
Series Editor | Series Title | Abbreviated Series Title | |||
Series Volume | Series Issue | Edition | |||
ISSN | ISBN | Medium | |||
Area | Expedition | Conference | |||
Notes | Duplicated as 1190 | Approved | no | ||
Call Number | Serial | 1285 | |||
Permanent link to this record | |||||
Author | Goltsman, G. | ||||
Title | Quantum-photonic integrated circuits | Type | Conference Article | ||
Year | 2019 | Publication | Proc. IWQO | Abbreviated Journal | Proc. IWQO |
Volume | Issue | Pages | 22-23 | ||
Keywords | WSSPD, waveguide SSPD, SNSPD, quantum optics, integrated optics, superconducting nanowire single-photon detector | ||||
Abstract | We show the design, a history of development as well as the most successful and promising approaches for QPICs realization based on hybrid nanophotonic-superconducting devices, where one of the key elements of such a circuit is a waveguide integrated superconducting single-photon detector (WSSPD). The potential of integration with fluorescent molecules is discussed also. | ||||
Address | |||||
Corporate Author | Thesis | ||||
Publisher | Place of Publication | Editor | |||
Language | Summary Language | Original Title | |||
Series Editor | Series Title | Abbreviated Series Title | |||
Series Volume | Series Issue | Edition | |||
ISSN | ISBN | Medium | |||
Area | Expedition | Conference | |||
Notes | Approved | no | |||
Call Number | Serial | 1287 | |||
Permanent link to this record | |||||
Author | Mehdi, I.; Gol'tsman, G.; Putz, P. | ||||
Title | Introduction to the mini-special-issue on the 25th international symposium on space terahertz technology (ISSTT) | Type | Miscellaneous | ||
Year | 2015 | Publication | IEEE Trans. THz Sci. Technol. | Abbreviated Journal | IEEE Trans. THz Sci. Technol. |
Volume | 5 | Issue | 1 | Pages | 14-15 |
Keywords | |||||
Abstract | THE 25th International Symposium on Space Terahertz Technology (ISSTT) was held in Moscow, Russia, between April 27–30, 2014. The conference was organized by Moscow State Pedagogical University and the Higher School of Economics (National Research University) and Chaired by Professor Gregory Gol'tsman of Moscow State Pedagogical University. The conference was attended by roughly 150 participants from 15 countries. The technology covered by ISSTT includes detectors, devices, circuits and systems in various areas of THz science and technology. Each year this symposium brings together the global THz space science technology community, and as such, emphasizes the broad international collaboration that is required to execute these large complicated instrument programs that dominate this field. However, talks covering technologies for balloon, aircraft, and ground-based telescopes were also presented. In this special section of IEEE Transactions on Terahertz Science and Technology, we include eight expanded papers from the 25th ISSTT symposium. The papers range from development of SIS mixers to optical adjustment systems for radio telescopes. The 26th ISSTT will be held in Boston, MA, USA, during March 16–18, 2015. Researchers and scientist involved in THz research are invited to attend this symposium (more details are at http://www.cfa.harvard.edu/events/2015/isstt2015/). You can access the full list of papers presented at the ISSTT symposia from the National Radio Astronomy Observatory website: http://www.nrao.edu/meetings/isstt/index.shtml Yours sincerely |
||||
Address | |||||
Corporate Author | Thesis | ||||
Publisher | Place of Publication | Editor | |||
Language | Summary Language | Original Title | |||
Series Editor | Series Title | Abbreviated Series Title | |||
Series Volume | Series Issue | Edition | |||
ISSN | 2156-342X | ISBN | Medium | ||
Area | Expedition | Conference | |||
Notes | Approved | no | |||
Call Number | Serial | 1353 | |||
Permanent link to this record | |||||
Author | Елезов, М. С.; Корнеев, А. А; Дивочий, А. В.; Гольцман, Г. Н. | ||||
Title | Сверхпроводящие однофотонные детекторы с разрешением числа фотонов | Type | Conference Article | ||
Year | 2009 | Publication | Науч. сессия МИФИ | Abbreviated Journal | Науч. сессия МИФИ |
Volume | Issue | Pages | 47-58 | ||
Keywords | PNR SSPD, SNSPD | ||||
Abstract | |||||
Address | |||||
Corporate Author | Thesis | ||||
Publisher | Place of Publication | Editor | |||
Language | Summary Language | Original Title | |||
Series Editor | Series Title | Abbreviated Series Title | |||
Series Volume | Series Issue | Edition | |||
ISSN | ISBN | 978-5-7262-1042-1 | Medium | ||
Area | Expedition | Conference | |||
Notes | УДК 533.14(06)+004.056(06) Фотоника и информационная оптика | Approved | no | ||
Call Number | RPLAB @ sasha @ елезов2009сверхпроводящие | Serial | 1029 | ||
Permanent link to this record |