| Records |
| Author |
Gershenzon, E.M.; Gol'tsman, G.N.; Ptitsyna, N. G. |
| Title |
Carrier lifetime in excited states of shallow impurities in germanium |
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Journal Article |
| Year |
1977 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
| Volume |
25 |
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12 |
Pages |
539-543 |
| Keywords |
Ge, shallow impurities, excited states |
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1726 |
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Gershenzon, E. M.; Gershenzon, M. E.; Gol'tsman, G. N.; Semenov, A. D.; Sergeev, A. V. |
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Nonselective effect of electromagnetic radiation on a superconducting film in the resistive state |
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Journal Article |
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1982 |
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JETP Lett. |
Abbreviated Journal |
JETP Lett. |
| Volume |
36 |
Issue |
7 |
Pages |
296-299 |
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HEB |
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Неселективное воздействие электромагнитного излучения на сверхпроводящую пленку в резистивном состоянии |
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1717 |
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Gershenzon, E. M.; Gershenzon, M. E.; Gol'tsman, G. N.; Karasik, B. S.; Semenov, A. D.; Sergeev, A. V. |
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Light-induced heating of electrons and the time of the inelastic electron-phonon scattering in the YBaCuO compound |
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Journal Article |
| Year |
1987 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
| Volume |
46 |
Issue |
6 |
Pages |
285-287 |
| Keywords |
YBCO HTS HEB |
| Abstract |
For the first time, measurements have been made on the electron energy relaxation time due to the electron--phonon interaction in films of the YBaCuO superconductor. The results indicate a significant intensification of the electron--phonon interaction in this compound as compared with normal superconducting metals. |
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1706 |
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Gershenzon, E. M.; Gol'tsman, G. N.; Karasik, B. S.; Semenov, A. D. |
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Measurement of the energy gap in the compound YBaCu3O9-δ on the basis of the IR absorption spectrum |
Type |
Journal Article |
| Year |
1987 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
| Volume |
46 |
Issue |
5 |
Pages |
237-238 |
| Keywords |
YBCO HTS detectors |
| Abstract |
For the first time the long-wave infrared absorption spectrum has been measured by means of the bolometric effect and energy gap for high-temperature superconducting ceramics YBa/sub 2/Cu/sub 3/O/sub 9-delta/ has been determined from absorption threshold. 2delta/kT/sub c/ value is equal to 0.6. |
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1703 |
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Verevkin, A. I.; Ptitsina, N. G.; Chulkova, G. M.; Gol'tsman, G. N.; Gershenzon, E. M.; Yngvesson, K. S. |
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Electron energy relaxation in a 2D channel in AlGaAs-GaAs heterostructures under quasiequilibrium conditions at low temperatures |
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Journal Article |
| Year |
1995 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
| Volume |
61 |
Issue |
7 |
Pages |
591-595 |
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2DEG, AlGaAs/GaAs heterostructures |
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The energy relaxation time of 2D electrons, Te, has been measured under quasiequilibrium conditions in AlGaAs—GaAs heterojunctions over the temperature range T= 1.5—20 K. At T> 4 K, Te depends only weakly on the temperature, while at T< 4 K 7;'(T) there is a dependence fr; lNT. A linear dependence 7: 1 (T) in the Bloch—-Grfineisen temperature region (T< 5 K) is unambiguous evidence that a piezoacoustic mechanism of an electron—phonon interaction is predominant in the inelastic scattering of electrons. The values of T6 in this temperature range agree very accurately with theoretical results reported by Karpus [Sov. Phys. Semicond. 22 (1988)]. At higher temperatures, where scat—tering by deformation acoustic phonons becomes substantial, there is a significant discrepancy between the experimental and theoretical re-sults. |
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no |
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1624 |
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Aksaev, E. E.; Gershenzon, E. M.; Gol'tsman, G. N.; Semenov, A. D.; Sergeev, A. V. |
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Interaction of electrons with thermal phonons in YBa2Cu3O7-δ films at low temperatures |
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Journal Article |
| Year |
1989 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
| Volume |
50 |
Issue |
5 |
Pages |
283-286 |
| Keywords |
YBCO HTS films |
| Abstract |
The time of electron-phonon interaction tau(eph) in YBaCuO films at low temperatures is studied. This is measured as the time of resistance relaxation in the resistive state of the superconducter, and is also determined from the increase in resistance under the action of radiation. Consistent results of these methods show that resistance relaxation in the resistive state is caused by cooling of the electron subsystem with respect to the phonon subsystem. The time tau(eph) is found to be inversely proportional to the temperature and comes to 80 ps when T = 1.6 K and 5 ps when T = 30 K. 6 refs. |
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no |
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1690 |
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Tretyakov, I.; Shurakov, A.; Perepelitsa, A.; Kaurova, N.; Svyatodukh, S.; Zilberley, T.; Ryabchun, S.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G. |
| Title |
Silicon room temperature IR detectors coated with Ag2S quantum dots |
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Conference Article |
| Year |
2019 |
Publication |
Proc. IWQO |
Abbreviated Journal |
Proc. IWQO |
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369-371 |
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silicon detector, quantum dot, IR, surface states |
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For decades silicon has been the chief technological semiconducting material of modern microelectronics. Application of silicon detectors in optoelectronic devices are limited to the visible and near infrared ranges, due to their transparency for radiation with a wavelength higher than 1.1 μm. The expansion Si absorption towards longer wave lengths is a considerable interest to optoelectronic applications. In this work we present an elegant and effective solution to this problem using Ag2S quantum dots, creating impurity states in Si to cause sub-band gap photon absorption. The sensitivity of room temperature zero-bias Si_Ag2S detectors, which we obtained is 1011 cmHzW . Given the variety of QDs parameters such as: material, dimensions, our results open a path towards the future study and development of Si detectors for technological applications. |
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978-5-89513-451-1 |
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no |
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1154 |
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Проходцов, А. И.; Голиков, А. Д.; Ан, П. П.; Ковалюк, В. В.; Гольцман, Г. Н. |
| Title |
Влияние покрытия из оксида кремния на эффективность фокусирующего решеточного элемента связи из нитрида кремния |
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Conference Article |
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2019 |
Publication |
Proc. IWQO |
Abbreviated Journal |
Proc. IWQO |
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201-203 |
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integrated optics, silicon nitride, focusing grating coupler |
| Abstract |
В работе экспериментально изучена зависимость эффективности фокусирующего решеточного элемента связи от периода и фактора заполнения до и после напыления верхнего слоя из оксида кремния. Полученные данные имеют практическое значение при создании перестраиваемых интегрально-оптических устройств на нитриде кремния. |
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Russian |
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Duplicated as 1188 |
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1282 |
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Елезов, М. С.; Щербатенко, М. Л.; Сыч, Д. В.; Гольцман, Г. Н. |
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Практические особенности работы оптоволоконного квантового приемника Кеннеди |
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Conference Article |
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2019 |
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Proc. IWQO |
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Proc. IWQO |
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303-305 |
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Kennedy quantum receiver, fiber, quantum optics, standard quantum limit, superconducting nanowire single-photon detector, coherent detection |
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Мы рассматриваем практические особенности работы квантового приемника на основе схемы Кеннеди, собранного из стандартных оптоволоконных элементов и сверхпроводникового детектора одиночных фотонов. Приемник разработан для различения двух фазовомодулированных когерентных состояний света на длине волны 1,5 микрона в непрерывном режиме с частотой модуляции 200 КГц и уровнем ошибок различения примерно в два раза ниже стандартного квантового предела. |
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Duplicated as 1288 |
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1283 |
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Елманов, И. А.; Елманова, А. В.; Голиков, А. Д.; Комракова, С. А.; Каурова, Н. С.; Ковалюк, В. В.; Гольцман, Г. Н. |
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Способ определения параметров резистов для электронной литографии фотонных интегральных схем на платформе нитрида кремния |
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Conference Article |
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2019 |
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Proc. IWQO |
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Proc. IWQO |
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306-308 |
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Si3N4, e-beam lithography, EBL |
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В работе были измерены толщины резистов ZEP 520A и ma-N 2400 для электронно-лучевой литографии, неразрушающим способом, а также подобран рецепт, обеспечивающий высокое отношение скорости травления нитрида кремния по сравнению с резистом. Работа имеет практическое значение для электронной литографии интегрально-оптических устройств и устройств нанофотоники на основе нитрида кремния. |
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Duplicated as 1189 |
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1284 |
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