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Гольцман, Г. Н., Птицина, Н. Г., & Ригер, Е. Р. (1984). Оже-рекомбинация свободных носителей на мелких донорах в германии. Физика и техника полупроводников, 18(9), 1684–1686.
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Nebosis, R. S., Heusinger, M. A., Semenov, A. D., Lang, P. T., Schatz, W., Steinke, R., et al. (1993). Ultrafast photoresponse of an YBa2Cu3O7-δ film to far-infrared radiation pulses. Opt. Lett., 18(2), 96–97.
Abstract: We report the observation of an ultrafast photoresponse of a high-T(c), film to far-infrared radiation pulses. The response of a sample, consisting of a current-carrying structured YBa(2)Cu(3)O(7-delta) film cooled to liquid-nitrogen temperature, was studied by use of ultrashort laser pulses from an optically pumped far-infrared laser in the frequency range from 0.7 to 7 THz. We found that the response time was limited by the time resolution, 120 ps, of our electronic registration equipment.
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Gershenzon, E. M., Gol'tsman, G., & Ptitsina, N. G. (1973). Energy spectrum of free excitons in germanium. JETP Lett., 18(3), 93.
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Гершензон, Е. М., Семенов, И. Т., & Фогельсон, М. С. (1984). О механизме динамического сужения линии ЭПР доноров фосфора в кремнии. Физика и техника полупроводников, 18(3), 421–425.
Abstract: Температурная зависимость ширины линии ЭПР доноров Р в Si исследована в интервале концентрации ND=2.5⋅1017−9⋅1017см−3 и температур T=1.7−45 K на образцах с различной степенью компенсации основной примеси. Результаты согласуются с моделью обменного сужения линии при учете температурной зависимости обменного интеграла и тем самым исключают предлагавшийся ранее механизм сужения линии вследствие прыжкового движения электронов по примесным центрам.
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Yang, Z. Q., Hajenius, M., Baselmans, J. J. A., Gao, J. R., Voronov, B., & Gol’tsman, G. N. (2006). Reduced noise in NbN hot-electron bolometer mixers by annealing. Supercond. Sci. Technol., 19(4), L (9 to 12).
Abstract: We find that the sensitivity of heterodyne receivers based on superconducting hot-electron bolometers (HEBs) increases by 25–30% after annealing at 85 °C in vacuum. The devices studied are twin-slot antenna coupled mixers with a small NbN bridge of 1 × 0.15 µm2. We show that annealing changes the device properties as reflected in sharper resistive transitions of the complete device, apparently reducing the device-related noise. The lowest receiver noise temperature of 700 K is measured at a local oscillator frequency of 1.63 THz and a bath temperature of 4.3 K.
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