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Shangina, E. L.; Smirnov, K. V.; Morozov, D. V.; Kovalyuk, V. V.; Gol’tsman, G. N.; Verevkin, A. A.; Toropov, A. I. |
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Title |
Concentration dependence of the intermediate frequency bandwidth of submillimeter heterodyne AlGaAs/GaAs nanostructures |
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Journal Article |
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2010 |
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Bull. Russ. Acad. Sci. Phys. |
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Bull. Russ. Acad. Sci. Phys. |
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74 |
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1 |
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100-102 |
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2DEG AlGaAs/GaAs heterostructures, THz heterodyne detectors, IF bandwidth |
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The concentration dependence of the intermediate frequency bandwidth of heterodyne AlGaAs/GaAs detectors with 2D electron gas is measured using submillimeter spectroscopy with high time resolution at T= 4.2 K. The intermediate frequency bandwidth f3dBfalls from 245 to 145 MHz with increasing concentration of 2D electrons n s = (1.6-6.6) × 10[su11] cm-2. The dependence f3dB ≈ n s – 0.04±is observed in the studied concentration range; this dependence is determined by electron scattering by the deformation potential of acoustic phonons and piezoelectric scattering. |
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1062-8738 |
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1217 |
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Gol’tsman, G. N.; Smirnov, K. V. |
![goto web page (via DOI) doi](img/doi.gif)
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Title |
Electron-phonon interaction in a two-dimensional electron gas of semiconductor heterostructures at low temperatures |
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Journal Article |
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Year |
2001 |
Publication |
Jetp Lett. |
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Jetp Lett. |
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74 |
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9 |
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474-479 |
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2DEG, AlGaAs/GaAs heterostructures |
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Theoretical and experimental works devoted to studying electron-phonon interaction in the two-dimensional electron gas of semiconductor heterostructures at low temperatures in the case of strong heating in an electric field under quasi-equilibrium conditions and in a quantizing magnetic field perpendicular to the 2D layer are considered. |
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0021-3640 |
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По итогам проектов российского фонда фундаментальных исследований. Проект РФФИ # 98-02-16897 Электрон-фононное взаимодействие в двумерном электронном газе полупроводниковых гетероструктур при низких температурах |
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1541 |
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Гольцман, Г. Н.; Смирнов, К. В. |
![find record details (via OpenURL) openurl](img/xref.gif)
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По итогам проектов российского фонда фундаментальных исследований. Проект РФФИ # 98-02-16897 Электрон-фононное взаимодействие в двумерном электронном газе полупроводниковых гетероструктур при низких температурах |
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2001 |
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Письма в ЖЭТФ |
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Письма в ЖЭТФ |
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74 |
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9 |
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532-538 |
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2DEG, AlGaAs/GaAs heterostructures |
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Рассмотрены теоретические и экспериментальные работы, посвященные изучению электрон-фононного взаимодействия в двумерном электронном газе полупроводниковых гетероструктур при низких температурах в случае сильного разогрева в электрическом поле, в квазиравновесных условиях и в квантующем магнитном поле, перпендикулярном 2D слою. |
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Duplicated as 1541: “Electron-phonon interaction in a two-dimensional electron gas of semiconductor heterostructures at low temperatures” |
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1832 |
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Il’in, K. S.; Milostnaya, I. I.; Verevkin, A. A.; Gol’tsman, G. N.; Gershenzon, E. M.; Sobolewski, R. |
![goto web page (via DOI) doi](img/doi.gif)
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Title |
Ultimate quantum efficiency of a superconducting hot-electron photodetector |
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Journal Article |
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Year |
1998 |
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Appl. Phys. Lett. |
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Appl. Phys. Lett. |
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73 |
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26 |
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3938-3940 |
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NbN SSPD, SNSPD |
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The quantum efficiency and current and voltage responsivities of fast hot-electron photodetectors, fabricated from superconducting NbN thin films and biased in the resistive state, have been shown to reach values of 340, 220 A/W, and 4×104 V/W,
respectively, for infrared radiation with a wavelength of 0.79 μm. The characteristics of the photodetectors are presented within the general model, based on relaxation processes in the nonequilibrium electron heating of a superconducting thin film. The observed, very high efficiency and sensitivity of the superconductor absorbing the photon are explained by the high multiplication rate of quasiparticles during the avalanche breaking of Cooper pairs. |
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0003-6951 |
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no |
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1579 |
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Author |
Yagoubov, P.; Kroug, M.; Merkel, H.; Kollberg, E.; Gol'tsman, G.; Svechnikov, S.; Gershenzon, E. |
![goto web page (via DOI) doi](img/doi.gif)
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Title |
Noise temperature and local oscillator power requirement of NbN phonon-cooled hot electron bolometric mixers at terahertz frequencies |
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Journal Article |
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Year |
1998 |
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Appl. Phys. Lett. |
Abbreviated Journal |
Appl. Phys. Lett. |
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Volume ![sorted by Volume (numeric) field, descending order (down)](img/sort_desc.gif) |
73 |
Issue |
19 |
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2814-2816 |
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NbN HEB mixers, noise temperature, local oscillator power |
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In this letter, the noise performance of NbN-based phonon-cooled hot electron bolometric quasioptical mixers is investigated in the 0.55–1.1 THz frequency range. The best results of the double-sideband <cd><2018>DSB<cd><2019> noise temperature are: 500 K at 640 GHz, 600 K at 750 GHz, 850 K at 910 GHz, and 1250 K at 1.1 THz. The water vapor in the signal path causes significant contribution to the measured receiver noise temperature around 1.1 THz. The devices are made from 3-nm-thick NbN film on high-resistivity Si and integrated with a planar spiral antenna on the same substrate. The in-plane dimensions of the bolometer strip are typically 0.2Ï«2 um. The amount of local oscillator power absorbed in the bolometer is less than 100 nW. |
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911 |
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