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Verevkin, A. A.; Ptitsina, N. G.; Chulcova, G. M.; Gol'Tsman, G. N.; Gershenzon, E. M.; Yngvesson, K. S. |
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Determination of the limiting mobility of a two-dimensional electron gas in AlxGa1-xAs/GaAs heterostructures and direct measurement of the energy relaxation time |
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1996 |
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Phys. Rev. B Condens. Matter. |
Abbreviated Journal |
Phys. Rev. B Condens. Matter. |
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53 |
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12 |
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R7592-R7595 |
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2DEG, AlGaAs/GaAs heterostructures |
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We present results for a method to measure directly the energy relaxation time (τe) for electrons in a single AlxGa1−xAs/GaAs heterojunction; measurements were performed from 1.6 to 15 K under quasiequilibrium conditions. We find τeαT−1 below 4 K, and τe independent of T above 4 K. We have also measured the energy-loss rate, ⟨Q⟩, by the Shubnikov-de Haas technique, and find ⟨Q⟩α(T3e−T3) for T<~4.2 K; Te is the electron temperature. The values and temperature dependence of τe and ⟨Q⟩ for T<4 K agree with calculations based on piezoelectric and deformation potential acoustic phonon scattering. At 4.2 K, we can also estimate the momentum relaxation time, τm, from our measured τe. This leads to a preliminary estimate of the phonon-limited mobility at 4.2 K of μ=3×107 cm2/Vs (ns=4.2×1011 cm−2), which agrees well with published numerical calculations, as well as with an earlier indirect estimate based on measurements on a sample with much higher mobility. |
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0163-1829 |
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PMID:9982274 |
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1612 |
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Lang, P. T.; Leipold, I.; Knott, W. J.; Semenov, A. D.; Gol'tsman, G. N.; Renk, K. F. |
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New far-infrared laser lines from CH3Cl and CH3Br optically pumped with a continuously tunable high pressure CO2 laser |
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1991 |
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Appl. Phys. B |
Abbreviated Journal |
Appl. Phys. B |
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53 |
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4 |
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207-212 |
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CO2 IR lasers, applications, CH3Cl, CH3Br |
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In this paper we report on the detection of new far-infrared laser lines from CH3Cl and CH3Br optically pumped with a continuously tunable high pressure CO2 laser. We found 80 new lines for CH3Cl and 9 new lines for CH3Br in the frequency region between 16 cm−1 and 41 cm−1, all due to stimulated Raman scattering. For the Raman gain regions bandwidths up to about 700 MHz were found. We also observed high intensity short far-infrared laser pulses of durations in the nanosecond regime. |
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0721-7269 |
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1678 |
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Meledin, D. V.; Marrone, D. P.; Tong, C.-Y. E.; Gibson, H.; Blundell, R.; Paine, S. N.; Papa, D.C.; Smith, M.; Hunter, T. R.; Battat, J.; Voronov, B.; Gol'tsman, G. |
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A 1-THz superconducting hot-electron-bolometer receiver for astronomical observations |
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2004 |
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IEEE Trans. Microwave Theory Techn. |
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IEEE Trans. Microwave Theory Techn. |
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52 |
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10 |
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2338-2343 |
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NbN HEB mixer, applications |
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In this paper, we describe a superconducting hot-electron-bolometer mixer receiver developed to operate in atmospheric windows between 800-1300 GHz. The receiver uses a waveguide mixer element made of 3-4-nm-thick NbN film deposited over crystalline quartz. This mixer yields double-sideband receiver noise temperatures of 1000 K at around 1.0 THz, and 1600 K at 1.26 THz, at an IF of 3.0 GHz. The receiver was successfully tested in the laboratory using a gas cell as a spectral line test source. It is now in use on the Smithsonian Astrophysical Observatory terahertz test telescope in northern Chile. |
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0018-9480 |
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1484 |
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Gershenzon, E. M.; Gol'tsman, G. N. |
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Title |
Effect of electromagnetic radiation on a superconductor in a magnetic field |
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1988 |
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Izv. Akad. Nauk SSSR, Seriya Fizicheskaya |
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Izv. Akad. Nauk SSSR, Seriya Fizicheskaya |
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52 |
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3 |
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449-451 |
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The effect of electromagnetic radiation on thin superconducting films of Nb with a large number of static defects is investigated experimentally for the case where the film is in the resistive state due to an applied magnetic field and transport current. The results obtained are found to be well described by a model of spatially homogeneous electron heating. It is noted that the results obtained here for Nb films are also valid for Al, NbN, and MoRe films. |
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Russian |
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0367-6765 |
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4th Vsesoiuznyi Seminar po Opticheskomu Detektirovaniiu Magnitnykh Rezonansov v Tverdykh Telakh, Tallin, Estonian SSR, Apr. 1987 |
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1702 |
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Gershenzon, E. M.; Goltsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G. |
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Title |
Kinetics of submillimeter impurity and exciton photoconduction in Ge |
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1982 |
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Optics and Spectroscopy |
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Optics and Spectroscopy |
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52 |
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4 |
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454-455 |
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Ge, exciton photoconduction |
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