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Author Zhang, W.; Khosropanah, P.; Gao, J. R.; Kollberg, E. L.; Yngvesson, K. S.; Bansal, T.; Barends, R.; Klapwijk, T. M.
Title Quantum noise in a terahertz hot electron bolometer mixer Type Journal Article
Year 2010 Publication Applied Physics Letters Abbreviated Journal Appl. Phys. Lett.
Volume (down) 96 Issue 11 Pages 111113-(1-3)
Keywords HEB mixer, quantum limit, quantum noise, vacuum box, THz, Terahertz
Abstract We have measured the noise temperature of a single, sensitive superconducting NbN hot electron bolometer (HEB) mixer in a frequency range from 1.6 to 5.3 THz, using a setup with all the key components in vacuum. By analyzing the measured receiver noise temperature using a quantum noise (QN) model for HEB mixers, we confirm the effect of QN. The QN is found to be responsible for about half of the receiver noise at the highest frequency in our measurements. The beta-factor (the quantum efficiency of the HEB) obtained experimentally agrees reasonably well with the calculated value.
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Notes Approved no
Call Number Serial 624
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Author Tanner, M. G.; Natarajan, C. M.; Pottapenjara, V. K.; O'Connor, J. A.; Warburton, R. J.; Hadfield, R. H.; Baek, B.; Nam, S.; Dorenbos, S. N.; Bermúdez Ureña, E.; Zijlstra, T.; Klapwijk, T. M.; Zwiller, V.
Title Enhanced telecom wavelength single-photon detection with NbTiN superconducting nanowires on oxidized silicon Type Journal Article
Year 2010 Publication Applied Physics Letters Abbreviated Journal Appl. Phys. Lett.
Volume (down) 96 Issue 22 Pages 3
Keywords SNSPD
Abstract Superconducting nanowire single-photon detectors (SNSPDs) have emerged as a highly promising infrared single-photon detector technology. Next-generation devices are being developed with enhanced detection efficiency (DE) at key technological wavelengths via the use of optical cavities. Furthermore, new materials and substrates are being explored for improved fabrication versatility, higher DE, and lower dark counts. We report on the practical performance of packaged NbTiN SNSPDs fabricated on oxidized silicon substrates in the wavelength range from 830 to 1700 nm. We exploit constructive interference from the SiO2/Si interface in order to achieve enhanced front-side fiber-coupled DE of 23.2 % at 1310 nm, at 1 kHz dark count rate, with 60 ps full width half maximum timing jitter.
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Notes Approved no
Call Number RPLAB @ gujma @ Serial 655
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Author Zinoni, C.; Alloing, B.; Li, L. H.; Marsili, F.; Fiore, A.; Lunghi, L.; Gerardino, A.; Vakhtomin, Y. B.; Smirnov, K. V.; Gol’tsman, G. N.
Title Erratum: “Single photon experiments at telecom wavelengths using nanowire superconducting detectors” [Appl. Phys. Lett. 91, 031106 (2007)] Type Journal Article
Year 2010 Publication Appl. Phys. Lett. Abbreviated Journal Appl. Phys. Lett.
Volume (down) 96 Issue 8 Pages 089901
Keywords SSPD, SNSPD, erratum
Abstract A calculation error was made in the original publication of this letter. The error was in the calculation of the noise equivalent power (NEP) values for the avalanche photodiode detector (APD) and the superconducting single photon detector (SSPD), the incorrect values were plotted on the right axis in Fig. 1(b). The correct NEP values were calculated with the same equation reported in the original letter and the revised Fig. 1(b) is shown below. The other conclusions of the paper remain unaltered.
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Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0003-6951 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1395
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Author Шангина, Е. Л.; Смирнов, К. В.; Морозов, Д. В.; Ковалюк, В. В.; Гольцман, Г. Н.; Веревкин, А. А.; Торопов, А. И.
Title Концентрационная зависимость полосы преобразования смесителей субмиллиметрового диапазона на основе наноструктур AlGaAs/GaAs Type Journal Article
Year 2010 Publication Изв. РАН Сер. Физ. Abbreviated Journal Изв. РАН Сер. Физ.
Volume (down) 74 Issue 1 Pages 110-112
Keywords 2DEG AlGaAs/GaAs heterostructures, THz heterodyne detectors, IF bandwidth
Abstract Методом субмиллиметровой спектроскопии с высоким временным разрешением при Т = 4.2 К измерена концентрационная зависимость полосы преобразования гетеродинного детектирования гетероструктур AlGaAs/GaAs с двумерным электронным газом. С увеличением концентрации двумерных электронов ns = (1.6–6.6) · 1011см-2 ширина полосы преобразования f3dB уменьшается от 245 до 145 МГц. В исследованной области концентраций наблюдается зависимость f3dB , обусловленная рассеянием электронов на деформационном потенциале акустических фононов и пьезоэлектрическим рассеянием.
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Language Russian Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
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Notes Duplicated as 1217 Approved no
Call Number RPLAB @ gujma @ Serial 642
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Author Shangina, E. L.; Smirnov, K. V.; Morozov, D. V.; Kovalyuk, V. V.; Gol’tsman, G. N.; Verevkin, A. A.; Toropov, A. I.
Title Concentration dependence of the intermediate frequency bandwidth of submillimeter heterodyne AlGaAs/GaAs nanostructures Type Journal Article
Year 2010 Publication Bull. Russ. Acad. Sci. Phys. Abbreviated Journal Bull. Russ. Acad. Sci. Phys.
Volume (down) 74 Issue 1 Pages 100-102
Keywords 2DEG AlGaAs/GaAs heterostructures, THz heterodyne detectors, IF bandwidth
Abstract The concentration dependence of the intermediate frequency bandwidth of heterodyne AlGaAs/GaAs detectors with 2D electron gas is measured using submillimeter spectroscopy with high time resolution at T= 4.2 K. The intermediate frequency bandwidth f3dBfalls from 245 to 145 MHz with increasing concentration of 2D electrons n s = (1.6-6.6) × 10[su11] cm-2. The dependence f3dB ≈ n s – 0.04±is observed in the studied concentration range; this dependence is determined by electron scattering by the deformation potential of acoustic phonons and piezoelectric scattering.
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Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1062-8738 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1217
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Author Hoeffgen, S.K.; Kuhnhenn, J.; Weinand, U.
Title High radiation sensitivity of chiral long period gratings Type Journal Article
Year 2010 Publication IEEE Trans. Nucl. Sci. Abbreviated Journal
Volume (down) 57 Issue 5 Pages 2915 - 2922
Keywords chiral fiber gratings, chiral gratings, chiral LPG, from chiralphotonics
Abstract The radiation sensitivity of chiral long period gratings was investigated for the first time. After a Co-60 gamma dose of 100 kGy they show radiation-induced changes of their transmission dip wavelength of up to 10 nm, which is 100 to 1000 times higher than the radiation-induced wavelength shift of different fiber Bragg grating types. They can therefore be used as radiation sensors down to doses of 10 Gy or even below, but not for accurate dose measurements since the size of the wavelength shift after a certain dose still depends on the radiation dose rate. Chiral gratings made of eight single mode fiber types with differences of their radiation-induced attenuation of several orders of magnitude were investigated in order to look for a correlation between dip wavelength shift and fiber attenuation. However, the dip wavelength curves do not show exactly the same order as the fiber attenuation curves. A theory that can exactly predict all properties of the chiral gratings might enable us to specify from our results an optimized fiber for the production of gratings that can also be used for radiation dosimetry.
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Notes Approved no
Call Number Serial 848
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Author Шангина, Е. Л.; Смирнов, К. В.; Морозов, Д. В.; Ковалюк, В. В.; Гольцман, Г. Н.; Веревкин, А. А.; Торопов, А. И.
Title Полоса и потери преобразования полупроводникового смесителя с фононным каналом охлаждения двумерных электронов Type Journal Article
Year 2010 Publication Физика и техника полупроводников Abbreviated Journal
Volume (down) 44 Issue 11 Pages 1475-1478
Keywords 2DEG, AlGaAs/GaAs heterostructures mixers
Abstract Методом субмиллиметровой спектроскопии с высоким временным разрешением измерены температурная и концентрационная зависимости полосы преобразования смесителей терагерцового диапазона AlGaAs/GaAs на разогреве двумерных электронов с фононным каналом их охлаждения. Полоса преобразования на уровне 3 дБ (f3 dB) при 4.2 K при изменении концентрации ns варьируется в пределах 150-250 МГц в соответствии со степенным законом f3 dB propto ns-0.5, что соответствует доминирующему механизму рассеяния на пьезоэлектрических фононах. Минимальное значение коэффициента потерь преобразования полупроводникового смесителя достигается в структурах с высокой подвижностью носителей mu>3·105 см2/В·с при 4.2 K.
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Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
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Notes Duplicated as 1216 Approved no
Call Number RPLAB @ gujma @ Serial 702
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Author Shangina, E. L.; Smirnov, K. V.; Morozov, D. V.; Kovalyuk, V. V.; Gol’tsman, G. N.; Verevkin, A. A.; Toropov, A. I.
Title Frequency bandwidth and conversion loss of a semiconductor heterodyne receiver with phonon cooling of two-dimensional electrons Type Journal Article
Year 2010 Publication Semicond. Abbreviated Journal Semicond.
Volume (down) 44 Issue 11 Pages 1427-1429
Keywords 2DEG, AlGaAs/GaAs heterostructures mixers
Abstract The temperature and concentration dependences of the frequency bandwidth of terahertz heterodyne AlGaAs/GaAs detectors based on hot electron phenomena with phonon cooling of two-dimensional electrons have been measured by submillimeter spectroscopy with a high time resolution. At a temperature of 4.2 K, the frequency bandwidth at a level of 3 dB (f 3 dB) is varied from 150 to 250 MHz with a change in the concentration n s according to the power law f 3dB ∝ n −0.5 s due to the dominant contribution of piezoelectric phonon scattering. The minimum conversion loss of the semiconductor heterodyne detector is obtained in structures with a high carrier mobility (μ > 3 × 105 cm2 V−1 s−1 at 4.2 K).
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Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1063-7826 ISBN Medium
Area Expedition Conference
Notes Полоса и потери преобразования полупроводникового смесителя с фононным каналом охлаждения двумерных электронов Approved no
Call Number Serial 1216
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Author Tret’yakov, I. V.; Ryabchun, S. A.; Kaurova, N. S.; Larionov, P. A.; Lobastova, A. A.; Voronov, B. M.; Finkel, M. I.; Gol’tsman, G. N.
Title Optimum absorbed heterodyne power for superconducting NbN hot-electron bolometer mixer Type Journal Article
Year 2010 Publication Tech. Phys. Lett. Abbreviated Journal Tech. Phys. Lett.
Volume (down) 36 Issue 12 Pages 1103-1105
Keywords NbN HEB mixer
Abstract Absorbed heterodyne power has been measured in a low-noise broadband hot-electron bolometer (HEB) mixer for the terahertz range, operating on the effect of electron heating in the resistive state of an ultrathin superconducting NbN film. It is established that the optimum absorbed heterodyne power for the HEB mixer operating at 2.5 THz is about 100 nW.
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Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1063-7850 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1389
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Author Третьяков, И.В.; Рябчун, С.А.; Каурова, Н.С.; Ларионов, П.А.; Лобастова, А.А.; Воронов, Б.М.; Финкель, М.И.; Гольцман, Г.Н.
Title Оптимальная поглощенная мощность гетеродина для терагерцового сверхпроводникового NbN смесителя на электронном разогреве Type Journal Article
Year 2010 Publication Письма в Журнал технической физики Abbreviated Journal Письма в ЖТФ
Volume (down) 36 Issue 23 Pages 78-84
Keywords
Abstract Представлены результаты измерений поглощенной мощности гетеродина малошумящим широкополосным смесителем на эффекте электронного разогрева в резистивном состоянии сверхпроводниковой ультратонкой пленки NbN. Оптимальная поглощенная мощность гетеродина составила около 100 nW на частоте 2.5 THz.
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Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
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Area Expedition Conference
Notes Approved no
Call Number RPLAB @ gujma @ Serial 703
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